The document is a detailed device modeling report for the power MOSFET 2SJ567 manufactured by Toshiba, including various electrical characteristics and circuit simulations. It includes critical parameters such as transconductance, gate charge characteristics, switching time, and output characteristics, highlighted through measurement and simulation comparisons. The document serves as a technical reference encompassing a range of electrical behaviors and models associated with the device.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Professional)
PART NUMBER: 2SJ567
MANUFACTURER: TOSHIBA
Body Diode (Professional) / ESD Protection Diode
Bee Technologies Inc.
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2. Circuit Configuration
2
1
3
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3. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
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4. Equivalent Circuit
D
S1
- -
+ +
S
S2 R2 DGD
+
-
S
+
- 10MEG
CGD R1
10M
G
Q1
S
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5. Transconductance Characteristic
Circuit Simulation Result
10
Measurement
Simulation
TRANSCONDUCTANCE GFS(s)
1
0.1
0 0.5 1 1.5 2
DRIAN CURRENT ID (A)
Comparison table
gfs
- Id(A) Error(%)
Measurement Simulation
0.1 0.4400 0.4505 2.3751
0.2 0.6060 0.6349 4.7724
0.5 1.0310 1.0000 -3.0068
1 1.4290 1.4104 -1.2990
2 2.0000 1.9802 -0.9901
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6. Vgs-Id Characteristic
Circuit Simulation result
-2.0A
-1.8A
-1.6A
-1.4A
-1.2A
-1.0A
-0.8A
-0.6A
-0.4A
-0.2A
0A
0V -2V -4V -6V -8V -10V
I(Vsense)
V_VGS
Evaluation circuit
Vsense
U2 2SJ567_P
VDS
-10Vdc
VGS
0
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7. Comparison Graph
Circuit Simulation Result
5
Measurement
Simulation
4
- Drain Current ID (A)
3
2
1
0
0 2 4 6 8 10
- Gate - Source Voltage VGS (V)
Simulation Result
- VGS(V)
- ID(A) Error (%)
Measurement Simulation
0.1 3.450 3.473 0.661
0.2 3.643 3.662 0.508
0.5 4.000 4.037 0.925
1 4.480 4.462 -0.406
2 5.067 5.065 -0.036
3 5.500 5.531 0.562
4 5.900 5.925 0.424
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8. Rds(on) Characteristic
Circuit Simulation result
-1.50A
-1.38A
-1.25A
-1.13A
-1.00A
-0.88A
-0.75A
-0.63A
-0.50A
-0.38A
-0.25A
-0.13A
0A
0V -0.6V -1.2V -1.8V -2.4V -3.0V -3.6V -4.2V
I(Vsense)
V_VDS
Evaluation circuit
Vsense
U1 2SJ567
VDS
VGS
-10Vdc
0
Simulation Result
ID=-1.5A, VGS=-10V Measurement Simulation Error (%)
R DS (on) 1.600  1.600  0.000
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9. Gate Charge Characteristic
Circuit Simulation result
-16V
-12V
-8V
-4V
0V
0 2n 4n 6n 8n 10n 12n 14n 16n 18n 20n
V(W1:1)
Time*1mA
Evaluation circuit
Vsense
I1
Dbreak
D1 -2.5Adc
W 2SJ567_P
-
TD = 0 +
I2
W1 VD
ION = 0A -160Vdc
IOFF = 1mA
0
Simulation Result
VDD=-160V,ID=-2.5A Measurement Simulation Error (%)
Qgs 2.000 nC 1.990 nC -0.500
Qgd 4.000 nC 4.029 nC 0.725
Qg 10.000 nC 9.952 nC -0.480
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10. Capacitance Characteristic
Simulation Result
Cbd(pF)
- VDS(V) Error(%)
Measurement Simulation
0.1 460.000 459.000 -0.217
0.2 400.000 400.000 0.000
0.5 310.000 308.000 -0.645
1 240.000 241.000 0.417
2 180.000 181.000 0.556
5 115.000 114.000 -0.870
10 80.000 79.500 -0.625
20 57.000 56.880 -0.211
30 47.000 46.550 -0.957
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11. Switching Time Characteristic
Circuit Simulation result
-14V
-12V
___ VOUT/10 ___ VGS
-10V
-8V
-6V
-4V
-2V
0V
2V
0.8us 0.9us 1.0us 1.1us 1.2us 1.3us
V(L3:1) V(L2:2)/10
Time
Evaluation circuit
RL
3
66.7
R1 L3
2
30nH
V1 = 0 50 VD
V2 = -20 2SJ567_P -100Vdc
TD = 1u V1
TR = 10n R2
TF = 10n
PW = 10u 50
PER = 10m
0
Simulation Result
ID= -1.5A, VDD=-160V
Measurement Simulation Error(%)
VGS=0/-10V
ton 45.000 ns 45.168 ns 0.373
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12. Output Characteristic
Circuit Simulation result
2.0A
-8.0V -6V
1.8A -.5V
-10V
1.6A -4.8V
-15V
1.4A
-4.6V
1.2A
-4.4V
1.0A
0.8A
-4.2V
0.6A
0.4A
VGS=-4V
0.2A
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(V2)
V_VDS
Evaluation circuit
V2
VDS
2SJ567_P
VGS -10Vdc
0
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13. BODY DIODE
Forward Current Characteristic
Circuit Simulation Result
5.0A
1.0A
100mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
2SJ567_P
0
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14. Comparison Graph
Circuit Simulation Result
10
Measurement
Simulation
Drain reverse Current - IDR (A)
1
0.1
0 0.3 0.6 0.9 1.2 1.5
Drain - Source Voltage VDS (V)
Simulation Result
VSD(V)
IDR(A) Measuremen Simulation %Error
0.1 0.6900 0.6902 0.0290
0.2 0.7250 0.7221 -0.4000
0.5 0.7700 0.7727 0.3506
1 0.8200 0.8225 0.3073
2 0.8900 0.8861 -0.4382
5 1.0000 1.0000 0.0000
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15. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
0.80us 1.20us 1.60us 2.00us 2.40us
I(R1)
Time
Evaluation Circuit
R1 50
V1 = -9.3V
V2 = 10.8V U1 D2SJ567_PRO
TD = 170n
TR = 10ns V1
TF = 5.7ns
PW = 1us
PER = 50us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj 380.000 ns 379.745 ns -0.067
Trb 48.000 ns 47.621 ns -0.790
trr 428.000 ns 427.366 ns -0.148
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16. Reverse Recovery Characteristic Reference
Trj=380(ns)
Trb=48(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
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17. ESD PROTECTION DIODE
Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1
Evaluation Circuit
2SJ567_P
R1
IOPEN
0Adc
0.01m
V1
0Vdc
0
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18. Zener Voltage Characteristic Reference
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