This document provides a device modeling report for a TPCP8J01 power MOSFET. It includes SPICE models and simulation results for the MOSFET's components, including the power MOSFET, body diode, and ESD protection diode. Circuit configurations, model parameters, and comparisons between measurement and simulation data are presented for various electrical characteristics such as transconductance, capacitance, switching time, and more.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model Parameter)
PART NUMBER: TPCP8J01
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Parameter) / ESD Protection
Diode and BRT Model
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
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2. Circuit Configuration
8 7 6 5
TPCP8J01
1 2 3 4
MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
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3. Transconductance Characteristic
Circuit Simulation Result
100
Measurement
Simulation
Gfs (-S)
10
1
0.1 1 10
ID (-A)
Comparison table
Gfs(-s)
Id(-A) Error(%)
Measurement Simulation
0.5 4.348 4.505 3.599
1 6.250 6.289 0.629
2 8.696 8.658 -0.437
5 13.333 13.055 -2.086
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4. Vgs-Id Characteristic
Circuit Simulation result
-10A
-8A
-6A
-4A
-2A
0A
0V -1.0V -2.0V -3.0V -4.0V -5.0V
I(VD_Sense)
V_VGS
Evaluation circuit
VD_Sense
0Vdc
TPCP8J01
U10 10Vdc
VDS
0
VGS 0
0
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5. Comparison Graph
Circuit Simulation Result
10
Measurement
Simulation
8
Drain current ID (-A)
6
4
2
0
0.000 1.000 2.000 3.000 4.000 5.000
Gate-source voltage VGS (-V)
Simulation Result
VGS(-V)
ID(-A) Error (%)
Measurement Simulation
0.5 2.070 2.042 -0.028
1 2.170 2.137 -0.033
2 2.280 2.273 -0.007
5 2.530 2.554 0.024
10 2.900 2.887 -0.013
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
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6. Rds(on) Characteristic
Circuit Simulation result
-3.0A
-2.0A
-1.0A
0A
0V -50mV -100mV -150mV -200mV -250mV
I(VD_Sense)
V_VDS
Evaluation circuit
VD_Sense
0Vdc
TPCP8J01
U10
VDS
10Vdc
0
VGS
0
0
Simulation Result
ID=-3.0A, VGS=-10V Measurement Simulation Error (%)
R DS (on) 27 m 37 m 0.00
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
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7. Gate Charge Characteristic
Circuit Simulation result
-16V
-12V
-8V
-4V
0V
0 -10n -20n -30n -40n -50n
V(W1:4)
Time*-1mA
Evaluation circuit
TPCP8J01
U10
ION = 0uA
IOFF = 1mA
W D2 I2
- Dbreak 5.5
I1 = 0 +
I1
I2 = 1m W1
TD = 0 V1
TR = 10n
TF = 10n
PW = 600u -24
PER = 1000u
0
Simulation Result
VDD=-24V,ID=-5.5A Measurement Simulation Error (%)
,VGS=-10V
Qgs 5.000 nC 5.000 nC 0.00
Qgd 6.500 nC 6.480 nC -0.308
Qg 33.000 nC 26.610 nC -19.364
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
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8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(nF)
VDS(-V) Error(%)
Measurement Simulation
0.5 100.00 99.05 -0.95
1 70.00 71.30 1.86
2 47.00 47.67 1.43
5 27.00 26.47 -1.96
10 17.00 16.20 -4.71
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
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9. Switching Time Characteristic
Circuit Simulation result
-12V
-10V
-8V
-6V
-4V
-2V
0V
1.95us 2.00us 2.05us 2.10us
V(L1:2) V(L2:1)/1.5
Time
Evaluation circuit
L2 R2
50nH 5
TPCP8J01
U10
RG L1 V1
-15Vdc
PER = 2000u
PW = 10u 30nH
TF = 1n 4.7
TR = 1n R1
TD = 2u
V2 = 20 V2 4.7
V1 = 0
0
Simulation Result
ID=-3.0A, VDD=-15V
Measurement Simulation Error(%)
VGS=0/10V
ton 12.000 ns 12.001 ns 0.008
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
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10. Output Characteristic
Circuit Simulation result
-10A
-3V
-8A -2.8V
-3.5V
-4.5V
-10V -2.7V
-6A -2.6V
-2.5V
-4A
-2.4V
-2.3V
-2A
-2.2V
0A VGS=-2.1V
0V -1.0V -2.0V -3.0V -4.0V -5.0V
I(VD_Sense)
V_VDS
Evaluation circuit
VD_Sense
0Vdc
TPCP8J01
U10
VDS
10Vdc
0
VGS
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
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11. BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
0V 0.4V 0.8V 1.2V 1.6V 2.0V
I(VD_Sense)
V_VDS
Evaluation Circuit
VD_Sense
0Vdc
TPCP8J01
U10
VDS
10Vdc
0 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
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12. Comparison Graph
Circuit Simulation Result
100
Measurement
Simulation
IDR (-A)
10
1
0 0.4 0.8 1.2 1.6 2
Drain-source voltage
Simulation Result
VDS(V)
IDR(-A) %Error
Measurement Simulation
1 0.720 0.720 0.05
2 0.760 0.761 0.07
5 0.830 0.827 -0.39
10 0.895 0.898 0.37
20 1.010 1.009 -0.08
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13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
0.98us 1.02us 1.06us 1.10us 1.14us 1.18us
I(R1)
Time
Evaluation Circuit
R1
50
TPCP8J01 V1 V1 = -9.4v
U10 V2 = 10.6v
TD = 30n
TR = 10ns
TF = 5.7ns
PW = 1us
PER = 100us
0 0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj 10.8 ns 10.71 ns 0.83
trb 18.0 ns 32.16 ns 78.67
trr 28.8 ns 42.87 ns 48.85
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14. Reverse Recovery Characteristic Reference
Trj=10.8(ns)
Trb=18(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
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15. ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1
Evaluation Circuit
R2 100MEG
TPCP8J01
U10
0 R1
0.01m
V1
10Vdc 0
0
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16. Zener Voltage Characteristic Reference
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17. BRT Model
Input Voltage vs. Output Current (ON Characteristic)
Circuit Simulation Result
60mA
10mA
1.0mA
300uA
100mV 1.0V 10V 100V
I(VC_sense)
V_V_IN
Evaluation Circuit
OUT
VC_sense
V_OUT
V_IN U1 0.2Vdc
0Vdc TPCP8J01
0 0 0 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
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18. Comparison Graph
Circuit Simulation Result
100
Measurement
Simulation
COLLECTOR CURRENT IC (mA)
10
1
0.1
0.1 1 10
INPUT VOLTAGE Vi(on) (V)
Simulation Result
VI_ON (V)
Ic (mA) %Error
Measurement Simulation
0.5 0.76 0.767 0.92
1 0.79 0.803 1.65
2 0.82 0.851 3.78
5 0.93 0.964 3.66
10 1.16 1.1686 0.74
20 2.05 1.9513 -4.81
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
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19. Input Voltage vs. Output Current (OFF Characteristic)
Circuit Simulation Result
3.0mA
1.0mA
100uA
30uA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V
I(VC_sense)
V_V_IN
Evaluation Circuit
OUT
VC_sense
V_IN U1 V_OUT
0Vdc TPCP8J01 5Vdc
0 0 0 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
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20. Comparison Graph
Circuit Simulation Result
10000
Measurement
Simulation
COLLECTOR CURRENT IC (mA)
1000
100
10
0.1 1 10
INPUT VOLTAGE Vi(on) (V)
Simulation Result
VI_OFF (V)
Ic (uA) %Error
Measurement Simulation
50 0.667 0.675 1.20
100 0.688 0.696 1.16
200 0.71 0.719 1.27
500 0.745 0.75 0.67
1000 0.785 0.777 -1.02
2000 0.83 0.81 -2.41
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21. DC Current Gain vs. Output Current
Circuit Simulation Result
1.0K
100
30
1.0mA 10mA 100mA
I(VC_sense)/I_IB
I(VC_sense)
Evaluation Circuit
VC_sense
IB VCE
0Adc 5Vdc
U1
TPCP8J01
0 0 0 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
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22. Comparison Graph
Circuit Simulation Result
1000
Measurement
DC CURRENT GAIN hFE
Simulation
100
10
0.001 0.01 0.1
COLLECTOR CURRENT IC (mA)
Simulation Result
Condition @ Vce=5V
VI_ON (V)
Ic (mA) %Error
Measurement Simulation
0.001 67 65.033 -2.94
0.002 115 116.13 0.98
0.005 215 225.137 4.71
0.01 315 329.235 4.52
0.02 415 419.664 1.12
0.05 450 433.677 -3.63
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23. DC Current Gain vs. Output Current
Circuit Simulation Result
1.0V
100mV
10mV
1.0mA 10mA 100mA
V(OUT)
I_IC
Evaluation Circuit
OUT
VC_sense
U1
TPCP8J01
F
GAIN = 0.05 0 0
F1
0 IC
0Adc
0
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24. Comparison Graph
Circuit Simulation Result
1
Measurement
Simulation
Vce(sat) (V)
0.1
0.01
0.001 0.01 0.1
Ic (A)
Simulation Result
Condition @ Ic/Ib = 20
VI_ON (V)
Ic (mA) %Error
Measurement Simulation
0.001 0.084 0.0864 2.86
0.002 0.073 0.0702 -3.84
0.005 0.067 0.0657 -1.98
0.01 0.078 0.0793 1.67
0.02 0.125 0.1194 -4.48
0.05 0.252 0.2604 3.33
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
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