This document summarizes the modeling of components in a power MOSFET device. It includes: 1) SPICE model parameters for the power MOSFET and its body diode. 2) Simulation results showing characteristics like transconductance, capacitance and switching times match measurements. 3) SPICE models for the body diode and ESD protection diode with simulation matching measurements.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model Parameters)
PART NUMBER: TPCF8103
MANUFACTURER: TOSHIBA
Body Diode (Model Parameters) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

2. Circuit Configuration
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

3. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

4. Transconductance Characteristic
Circuit Simulation Result
10
9
8
7
6
gfs
5
4
3
2 Measurement
Simulation
1
0 1 2 3 4 5
- ID - Drain Current - A
Comparison table
gfs
- Id(A) Error(%)
Measurement Simulation
0.1 1.300 1.333 2.538
0.2 2.000 2.000 0.000
0.5 3.100 3.125 0.806
1 4.300 4.333 0.767
2 5.800 5.882 1.414
5 9.200 9.434 2.543
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

5. Vgs-Id Characteristic
Circuit Simulation result
-5.0A
-4.0A
-3.0A
-2.0A
-1.0A
0A
0V -0.5V -1.0V -1.5V -2.0V -2.5V
I(V3)
V_V1
Evaluation circuit
U10
V3
0Vdc
V2
V1 -10
TPCF8103
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

6. Comparison Graph
Circuit Simulation Result
5
Measurement
BeeTech
4
- ID - Drain Current - A
3
2
1
0
0.0 0.5 1.0 1.5 2.0 2.5
- VGS - Gate to Source Voltage - V
Simulation Result
- VGS(V)
- ID(A) Error (%)
Measurement Simulation
0.1 1.000 1.048 4.800
0.2 1.120 1.113 -0.625
0.5 1.250 1.230 -1.600
1 1.400 1.362 -2.714
2 1.600 1.564 -2.250
5 2.000 1.959 -2.050
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

7. Rds(on) Characteristic
Circuit Simulation result
-2.0A
-1.5A
-1.0A
-0.5A
0A
0V -50mV -100mV -150mV -200mV
I(V2)
V_VDS
Evaluation circuit
U10 V2
0Vdc
0Vdc
VDS
VGS
-4.5Vdc
TPCF8103
0
Simulation Result
ID=-1.4A, VGS=-4.5V Measurement Simulation Error (%)
R DS (on) 0.072  0.072  0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

8. Gate Charge Characteristic
Circuit Simulation result
10V
8V
6V
4V
2V
0V
0 2n 4n 6n 8n 10n
-V(W1:4)
Time*1mA
Evaluation circuit
ION = 0uA
IOFF = 1mA
W U10 D2 I2
-
I1 = 0 + 2.7
I1 Dbreak
I2 = 1m W1
TD = 0 TPCF8103
TR = 10n V1
TF = 10n
PW = 600u
PER = 1000u -16
0
Simulation Result
VDD=-16V,ID=-2.7A
Measurement Simulation Error (%)
,VGS=-5V
Qgs(nC) -0.800 -0.799 -0.125
Qgd(nC) -2.000 -2.015 0.750
Qg -6.000 -4.479 -25.350
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

9. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.1 40.000 40.746 1.865
0.2 38.000 38.545 1.434
0.5 33.000 33.000 0.000
1 27.000 27.600 2.222
2 20.000 20.400 2.000
5 12.000 12.000 0.000
10 7.000 7.300 4.286
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10. Switching Time Characteristic
Circuit Simulation result
-14V
-12V
-10V
-8V
-6V
-4V
-2V
0V
1.98us 2.00us 2.05us 2.10us 2.13us
V(L1:2)*2 V(L2:1)
Time
Evaluation circuit
U10
L2 R2
7.14
50nH
-10Vdc
RG L1
PER = 2000u V1
PW = 10u
TF = 1n 30nH
TR = 1n 4.7
R1 TPCF8103
TD = 2u
V2 = 10 V2 4.7
V1 = 0
0
Simulation Result
ID=-1.4A, VDD=-10V
Measurement Simulation Error(%)
VGS=-0/5V
Ton(ns) 9.000 9.014 0.156
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

11. Output Characteristic
Circuit Simulation result
-10A
-2.8
-3
-8A
-6A
-2
-4A -1.8
-2A
VGS=-1.5 V
0A
0V -1.0V -2.0V -3.0V -4.0V -5.0V
I(V3)
V_V2
Evaluation circuit
U10
V3
0Vdc
V2
V1
0
TPCF8103
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

12. BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
0V 0.4V 0.8V 1.2V 1.6V 2.0V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc
U25
TPCF8103
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

13. Comparison Graph
Circuit Simulation Result
10.00
Measurement
Simulation
Drain reverse current IDR(A)
1.00
0.10
0 0.2 0.4 0.6 0.8 1 1.2
Source-Drain voltage VSD(V)
Simulation Result
- VSD(V)
- IDR(A) %Error
Measurement Simulation
1 0.760 0.761 0.132
2 0.820 0.818 -0.244
5 0.930 0.930 0.000
10 1.070 1.069 -0.093
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

14. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
1.00us 1.04us 1.08us 1.12us 1.16us 1.20us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.4v V1
V2 = 10.6v
TD = 66n U25
TR = 10ns
TF = 9ns TPCF8103
PW = 1us
PER = 100us
0
Compare Measurement vs. Simulation
Trr(ns) Measurement Simulation Error (%)
Trr(ns) 19.500 19.538 0.195
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

15. Reverse Recovery Characteristic Reference
Trj=7.000ns)
Trb=12.000(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

16. ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1
Evaluation Circuit
U25
0.01m R1 R2
TPCF8103
100MEG
V1
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

17. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006