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Overview on
Terahertz Generation and
Detection using Photoconductive
Aperture antenna
by
Tanumoy Saha
What is Terahertz Radiation?
Terahertz radiation, also called sub millimeter
radiation, terahertz waves, terahertz light, T-rays, T-waves, T-
light, T-lux, or THz, consists of electromagnetic waves
at frequencies from 40GHz to 4THz
Generation of Terahertz Radiation
Photoconductive technique
Non-linear optical technique
Photoconductive technique
•High energy photons creates charge carriers
•Biased electric field applied accelerates charge carriers
•Accelerating charge carriers emit radiation
V+
V-
Intensityof
Excitation
laserpulse
Current
density
ETHz
Time
Current density Change due to
formation of Charge Carries for a
short instant of time
Due to change in current density
ETHz α dJ/dt
Requirements for Generating Broadband
Terahertz radiation
•A photoconductive Antenna
•Ultrashort Laser pulse source
•DC source for Bias Voltage
Setup for Generating Terahertz Radiation
Photoconductive Antenna
•For our application we use Semiconductors (GaAs)
• Impurities are doped epitaxy is done for decreasing the life
time of the carriers
•Structural design and material properties of the Antenna
dictates efficiency of the THz radiaton that we will discuss in
the subsequent slides.
Types of Photoconductive Antennas on the Basis of
their Design
•Aperture antennas(Small and large compared to
wavelength)
•Spiral Antennas
•Bowtie Antennas
•Dipole Antennas
Photoconductive Aperture Antenna
Metal Contacts
Epitaxial layer(carriers in this
layer has low life time then
substrate layer)
substrate layer
LT-GaAs
SI-GaAs
l
Photoconductive Aperture Antenna
LT-GaAs
SI-GaAs
l
Where τr,epi= trapping time of the carriers
in the epitaxial layer
R = intensity reflectivity of the
surface
x = distance from surface of
semiconductor to the
observation point
n(x,t) = carrier density
V+ V-
Small Aperture Antenna(A<<λTHz)
LT-GaAs
SI-GaAs
l
V+ V-
Photoconductive Aperture Antenna
Where nepi = carrier conc in the
epitaxial layer
Therefore we have
LT-GaAs
SI-GaAs
l
V+ V-
Photoconductive Aperture Antenna
Similarly for substrate layer we have
Photoconductive Aperture Antenna
LT-GaAs
SI-GaAs
l
V+ V-
In presence of biased field the time
evolution of the velocity of carriers
is given by
Where τrel = momentum relaxation time
E = local electric field
LT-GaAsl
V+ V-
Photoconductive Aperture Antenna
Time evolution of Polarization is
given by
Where τrec = recombination time of
the carriers
J(t) = surface current density
SI-GaAs
Now by the use of Maxwells equation
electric far field(i.e r>>λTHz) is given by
Where A = area of illumination of the
excitation pulse
r = distance from the center of the
antenna to observation point
Js(t) = surface induced current
density = σ(t)Eeff(t)
Photoconductive Aperture Antenna
V+
LT-GaAsl
V-
SI-GaAs
EDC
Photoconductive Aperture Antenna
Large Aperture antenna (A >> λTHz)
Then using the above approximation we have
Where σs(t) = surface conductivity
σd = threshold conductivity(conductivity at which
substance transfers from dielectric to metallic)
EDC
Photoconductive Aperture Antenna
Surface conductivity is given by
Where I(t) is the instantaneous amplitude of
the excitation pulse
And v is the frequency of the excitation pulse
And τ is the carrier life time
Photoconductive Aperture Antenna
Where I(t) is given by
Factors Effecting the efficiency of
aperture THz-PCAs
•Trapping time of Carriers: Trapping time governs the
FWHM of the carrier density thereby that of current
density J(t). Trapping time of the order of ps generate
THz spectrum
•Effect of Laser pulse and Duration: High frequency and
low duration pulse(order of femto-seconds) generate
wideband terahertz radiation
•Effect of Electric field and Dipole apperture antenna:
smaller aperture perfect dipole
Detection of Terahertz Radiation
Photoconductive technique
Non-linear optical technique
Excitation
laserpulse
Carrier
Density
Terahertz
pulse
Current
detected
time
Detection of Terahertz Radiation
Dynamics of the Carriers is same as discussed earlier, The
only difference is that instead of bias field we have the
time varying ETHz and we measure the time varying
current which gives information of the frequency and
amplitude of the THz radiation
Detection of Terahertz Radiation
FFT
Current
detected
time
Amplitude
Frequency(THz scale)Frequency(THz scale)
Factors Effecting the efficiency of
detector
•Trapping time of Carriers: Trapping time governs the
FWHM of the carrier density i.e the effective region of
detection
So for better detection τtrap<1/wTHz
•Effect of Laser pulse and Duration: Amplitude dictates
the rate of formation of effective charge carriers and so
its density thereby increasing the resolution of detection
•Dipole apperture antenna: small aperture more
effective detection as it acts like perfect dipole
Conclusion
So in making terahertz antennas we
focus on factors effecting
1. Life time of the carriers
2. Mobility of the Carriers
3. Density of carriers
Reference
1. Broadband THz Generation from Photoconductive Antenna by Qing
Chang1, Dongxiao Yang1,2, and Liang Wang1
2. Terahertz Photoconductive Antennas: Principles and Applications by
Daryoosh Saeedkia
3. COMPARISON OF TERAHERTZ ANTENNAS by Di LI , and Yi HUNAG
4. Terahertz Spectroscopy Principles and Applications by Brian J. Thompson
5. Wikipedia
6. Electricity and Magnetism by DJ Griffiths
7. Solid State physics by Charles Kittel

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Terahertz generation and detection using aperture antenna

  • 1. Overview on Terahertz Generation and Detection using Photoconductive Aperture antenna by Tanumoy Saha
  • 2. What is Terahertz Radiation? Terahertz radiation, also called sub millimeter radiation, terahertz waves, terahertz light, T-rays, T-waves, T- light, T-lux, or THz, consists of electromagnetic waves at frequencies from 40GHz to 4THz
  • 3. Generation of Terahertz Radiation Photoconductive technique Non-linear optical technique
  • 4. Photoconductive technique •High energy photons creates charge carriers •Biased electric field applied accelerates charge carriers •Accelerating charge carriers emit radiation
  • 6. Intensityof Excitation laserpulse Current density ETHz Time Current density Change due to formation of Charge Carries for a short instant of time Due to change in current density ETHz α dJ/dt
  • 7. Requirements for Generating Broadband Terahertz radiation •A photoconductive Antenna •Ultrashort Laser pulse source •DC source for Bias Voltage
  • 8. Setup for Generating Terahertz Radiation
  • 9. Photoconductive Antenna •For our application we use Semiconductors (GaAs) • Impurities are doped epitaxy is done for decreasing the life time of the carriers •Structural design and material properties of the Antenna dictates efficiency of the THz radiaton that we will discuss in the subsequent slides.
  • 10. Types of Photoconductive Antennas on the Basis of their Design •Aperture antennas(Small and large compared to wavelength) •Spiral Antennas •Bowtie Antennas •Dipole Antennas
  • 11. Photoconductive Aperture Antenna Metal Contacts Epitaxial layer(carriers in this layer has low life time then substrate layer) substrate layer LT-GaAs SI-GaAs l
  • 12. Photoconductive Aperture Antenna LT-GaAs SI-GaAs l Where τr,epi= trapping time of the carriers in the epitaxial layer R = intensity reflectivity of the surface x = distance from surface of semiconductor to the observation point n(x,t) = carrier density V+ V- Small Aperture Antenna(A<<λTHz)
  • 13. LT-GaAs SI-GaAs l V+ V- Photoconductive Aperture Antenna Where nepi = carrier conc in the epitaxial layer Therefore we have
  • 14. LT-GaAs SI-GaAs l V+ V- Photoconductive Aperture Antenna Similarly for substrate layer we have
  • 15. Photoconductive Aperture Antenna LT-GaAs SI-GaAs l V+ V- In presence of biased field the time evolution of the velocity of carriers is given by Where τrel = momentum relaxation time E = local electric field
  • 16. LT-GaAsl V+ V- Photoconductive Aperture Antenna Time evolution of Polarization is given by Where τrec = recombination time of the carriers J(t) = surface current density SI-GaAs
  • 17. Now by the use of Maxwells equation electric far field(i.e r>>λTHz) is given by Where A = area of illumination of the excitation pulse r = distance from the center of the antenna to observation point Js(t) = surface induced current density = σ(t)Eeff(t) Photoconductive Aperture Antenna V+ LT-GaAsl V- SI-GaAs
  • 18. EDC Photoconductive Aperture Antenna Large Aperture antenna (A >> λTHz) Then using the above approximation we have Where σs(t) = surface conductivity σd = threshold conductivity(conductivity at which substance transfers from dielectric to metallic)
  • 19. EDC Photoconductive Aperture Antenna Surface conductivity is given by Where I(t) is the instantaneous amplitude of the excitation pulse And v is the frequency of the excitation pulse And τ is the carrier life time
  • 21. Factors Effecting the efficiency of aperture THz-PCAs •Trapping time of Carriers: Trapping time governs the FWHM of the carrier density thereby that of current density J(t). Trapping time of the order of ps generate THz spectrum •Effect of Laser pulse and Duration: High frequency and low duration pulse(order of femto-seconds) generate wideband terahertz radiation •Effect of Electric field and Dipole apperture antenna: smaller aperture perfect dipole
  • 22. Detection of Terahertz Radiation Photoconductive technique Non-linear optical technique
  • 24. Detection of Terahertz Radiation Dynamics of the Carriers is same as discussed earlier, The only difference is that instead of bias field we have the time varying ETHz and we measure the time varying current which gives information of the frequency and amplitude of the THz radiation
  • 25. Detection of Terahertz Radiation FFT Current detected time Amplitude Frequency(THz scale)Frequency(THz scale)
  • 26. Factors Effecting the efficiency of detector •Trapping time of Carriers: Trapping time governs the FWHM of the carrier density i.e the effective region of detection So for better detection τtrap<1/wTHz •Effect of Laser pulse and Duration: Amplitude dictates the rate of formation of effective charge carriers and so its density thereby increasing the resolution of detection •Dipole apperture antenna: small aperture more effective detection as it acts like perfect dipole
  • 27. Conclusion So in making terahertz antennas we focus on factors effecting 1. Life time of the carriers 2. Mobility of the Carriers 3. Density of carriers
  • 28. Reference 1. Broadband THz Generation from Photoconductive Antenna by Qing Chang1, Dongxiao Yang1,2, and Liang Wang1 2. Terahertz Photoconductive Antennas: Principles and Applications by Daryoosh Saeedkia 3. COMPARISON OF TERAHERTZ ANTENNAS by Di LI , and Yi HUNAG 4. Terahertz Spectroscopy Principles and Applications by Brian J. Thompson 5. Wikipedia 6. Electricity and Magnetism by DJ Griffiths 7. Solid State physics by Charles Kittel