SPICE MODEL of TPCP8305 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: MOSFET (Model Parameters)
PART NUMBER: TPCP8305
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Model Parameters)

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
2
MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
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Transconductance Characteristics
Circuit Simulation result
Comparison table
-ID (A)
gfs (S)
%Error
Measurement Simulation
2 11.411 11.526 1.01
5 17.553 17.657 0.59
10 24.321 24.100 -0.91
20 32.350 32.430 0.25
24 33.851 34.691 2.48
VDS=-10V

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V_VGS
0V -1.0V -2.0V -3.0V -4.0V
-I(Vsense)
0A
6A
12A
18A
24A
VGS
V1
-10V
0
U1
TPCP8305
Vsense
Vgs-Id Characteristics
Circuit Simulation result
Evaluation circuit

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Comparison Graph
Circuit Simulation result
Comparison table
-ID (A)
-VGS (V)
%Error
Measurement Simulation
1 1.259 1.200 -4.69
2 1.323 1.301 -1.66
5 1.495 1.506 0.74
10 1.726 1.744 1.04
20 2.142 2.097 -2.10
24 2.328 2.215 -4.85
VDS=-10V

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VGS
-4.5V
0
VDS
U1
TPCP8305
Vsense
V_VDS
0V -10mV -20mV -30mV -40mV -50mV -60mV
-I(Vsense)
0A
0.5A
1.0A
1.5A
2.0A
2.5A
3.0A
Rds(on) Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VGS=-4.5(V), ID=-3(A)
Parameter Unit Measurement Simulation %Error
RDS(on) mΩ 23.000 22.982 -0.08

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V_VDS
0V -1.0V -2.0V -3.0V -4.0V -5.0V
-I(Vsense)
0A
4A
8A
12A
16A
20A
VGS
0
VDS
U1
TPCP8305
Vsense
Output Characteristics
Circuit Simulation result
Evaluation circuit
VGS=-1.4V
-1.5
-2.2
-2.5
-2
-1.9
-4.5
-1.8
-1.7
-1.6

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Capacitance Characteristics
Simulation result
Comparison table
VSD (V)
Cbd (pF)
%Error
Measurement Simulation
0.1 130.000 129.550 -0.35
0.2 112.000 112.800 0.71
0.5 90.000 90.220 0.24
1 75.000 74.750 -0.33
2 62.000 61.400 -0.97
5 48.000 47.000 -2.08
10 38.000 38.295 0.78
20 30.000 31.175 3.92
Simulation
Measurement

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Time*1mA
0 8n 16n 24n 32n 40n
V(W1:4)
0V
-2V
-4V
-6V
-8V
-10V
U1
TPCP8305
D1
dmod ID
6A
VDD
-16V
0
-
+
W1
ION = 0
IOFF = 1mA
W
IG
TD = 0
TF = 10n
PW = 10m
PER = 1
I1 = 0
I2 = -1m
TR = 10n
Gate Charge Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VDD=-16(V), VGS=-5(V), ID=-6(A)
Parameter Unit Measurement Simulation %Error
Qgs nC 4.500 4.503 0.07
Qgd nC 5.500 5.462 -0.69
Qg nC 22.000 19.858 -9.74

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Time
1.8us 1.9us 2.0us 2.1us 2.2us 2.3us
V(U1:4) V(U1:5)/2
0V
-1.0V
-2.0V
-3.0V
-4.0V
-5.0V
-6.0V
-7.0V
-8.0V
L1
30nH
1 2
R1
4.7
V1TD = 2u
TF = 4n
PW = 5u
PER = 500u
V1 = 0
TR = 4n
V2 = -5 VDD
-10
0
RL
3.33
L2
50nH
12
U1
TPCP8305
Switching Time Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VDD=-10(V), VGS=-5(V), ID=-3(A), RG=4.7
Parameter Unit Measurement Simulation %Error
ton ns 27.500 27.455 -0.16

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V_VDS
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V
-I(VDS)
100mA
1.0A
10A
100A
U1
TPCP8305VDS
0
Body Diode Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

12. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
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Comparison Graph
Simulation result
Comparison table
-IDR (A)
VDS (V)
%Error
Measurement Simulation
0.1 0.596 0.594 -0.34
0.2 0.618 0.619 0.16
0.5 0.657 0.657 0.05
1 0.694 0.695 0.14
2 0.747 0.745 -0.27
5 0.835 0.837 0.24
10 0.942 0.943 0.11
20 1.120 1.109 -0.98
25 1.190 1.182 -0.67

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Time
1.92us 2.00us 2.08us 2.16us 2.24us 2.32us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
U1
TPCP8305
0
V1TD = 29.6ns
TF = 10ns
PW = 2us
PER = 200us
V1 = -9.5V
TR = 10ns
V2 = 10.65V
R1
50
Reverse Recovery Characteristics
Circuit Simulation result
Evaluation circuit
Comparison Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trj ns 24.800 24.893 0.38

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Reverse Recovery Characteristics Reference
Trj = 24.8(ns)
Trb = 65.6(ns)
Conditions: Ifwd = lrev = 0.2(A), Rl = 50
Relation between trj and trb
Example
Measurement