SPICE MODEL of SSM3J328R (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: MOSFET (Professional Model)
PART NUMBER: SSM3J328R
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Professional Model)

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
2
Circuit
MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
3
0
5
10
15
20
0 1 2 3 4 5
gfs(S)
Drain current -ID (A)
Measurement
Simulation
Transconductance Characteristics
Circuit Simulation result
Comparison table
-ID (A)
gfs (S)
%Error
Measurement Simulation
0.1 2.356 2.406 2.12
0.2 3.327 3.402 2.25
0.5 5.321 5.374 1.00
1 7.634 7.594 -0.52
2 11.000 10.728 -2.47
5 16.800 16.923 0.73
VDS=-3V

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
4
V_VGS
0V -0.5V -1.0V -1.5V -2.0V
I(Vsense)
-10mA
-100A
VGS
VDS
-3V
Vsense
U1
SSM3J328R
0
Vgs-Id Characteristics
Circuit Simulation result
Evaluation circuit

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
5
0.01
0.1
1
10
0 0.5 1 1.5 2
Draincurrent-ID(A)
Gate-source voltage -VGS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation result
Comparison table
-ID (A)
-VGS (V)
%Error
Measurement Simulation
0.01 0.715 0.746 4.34
0.02 0.745 0.756 1.48
0.05 0.780 0.778 -0.26
0.1 0.818 0.802 -1.96
0.2 0.857 0.837 -2.33
0.5 0.920 0.905 -1.63
1 0.980 0.982 0.20
2 1.080 1.091 1.02
5 1.290 1.308 1.40
10 1.580 1.553 -1.71
VDS=-3V

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
6
VGS
-4.5V
VDS
Vsense
U1
SSM3J328R
0
V_VDS
0V -20mV -40mV -60mV -80mV
I(Vsense)
0A
-0.5A
-1.0A
-1.5A
-2.0A
-2.5A
-3.0A
Rds(on) Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VGS=-4.5(V), ID=-3(A)
Parameter Unit Measurement Simulation %Error
RDS(on) mΩ 24.900 24.900 0.00

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
7
V_VDS
0V -0.2V -0.4V -0.6V -0.8V -1.0V
I(Vsense)
0A
-2A
-4A
-6A
-8A
-10A
VGS
VDS
Vsense
U1
SSM3J328R
0
Output Characteristics
Circuit Simulation result
Evaluation circuit
VGS=-1.5V
-1.8
-2.5
-4.5

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
8
Capacitance Characteristics
Simulation result
Comparison table
VSD (V)
Cbd (pF)
%Error
Measurement Simulation
0.1 100.000 101.980 1.98
0.2 80.000 78.043 -2.45
0.5 51.000 52.710 3.35
1 36.000 36.820 2.28
2 26.000 26.029 0.11
5 16.000 16.011 0.07
10 11.000 11.021 0.19
20 9.000 8.688 -3.47
Simulation
Measurement

9. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
9
Time*1mA
0 10n 20n 30n
V(GS)
0V
-2.0V
-4.0V
-6.0V
-8.0V
0
D1
DMod
-
+
W1
ION = 0
IOFF = 1mA
IG
TD = 0
TF = 10n
PW = 10m
PER = 1
I1 = 0
I2 = 1m
TR = 10n
GS
U1
SSM3J328R ID
4A
VDD
-16V
Gate Charge Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VDD=-16(V), VGS=-4.5(V), ID=-4(A)
Parameter Unit Measurement Simulation %Error
Qgs nC 1.900 1.909 0.47
Qgd nC 3.300 3.303 0.09
Qg nC 13.000 13.036 0.28

10. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
10
Time
1.84us 1.92us 2.00us 2.08us 2.16us 2.24us
V(G)*4 V(D)
0V
-2.5V
-5.0V
-7.5V
-10.0V
-12.5V
-15.0V
D
0
V1TD = 2u
TF = 2.5n
PW = 10u
PER = 1m
V1 = 0
TR = 2.5n
V2 = -5
VDD
-10V
RL
5
L2
30nH
12
U1
SSM3J328R
L1
30nH
1 2
R2
4.7
G
R1
4.7
Switching Time Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VDD=-10(V), VGS=0 to -2.5(V), ID=-2(A), RG=4.7(Ω)
Parameter Unit Measurement Simulation %Error
ton ns 32.000 32.707 2.21

11. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
11
V_VDS
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
-I(VDS)
1.0mA
10mA
100mA
1.0A
10A
100A
VDS
0
U1
SSM3J328R
Body Diode Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

12. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
12
0.001
0.01
0.1
1
10
0.0 0.2 0.4 0.6 0.8 1.0 1.2
DrianreversecurrentIDR(A)
Drain - source voltage VDS (V)
Measurement
Simulation
Comparison Graph
Simulation result
Comparison table
IDR (A)
VDS (V)
%Error
Measurement Simulation
0.001 0.448 0.440 -1.79
0.002 0.469 0.466 -0.64
0.005 0.499 0.500 0.20
0.010 0.522 0.527 0.96
0.020 0.545 0.553 1.47
0.050 0.584 0.588 0.68
0.100 0.612 0.615 0.49
0.200 0.644 0.644 0.00
0.500 0.690 0.688 -0.29
1.000 0.735 0.730 -0.68
2.000 0.800 0.786 -1.75
5.000 0.900 0.905 0.56

13. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
13
Time
9.6us 9.8us 10.0us 10.2us 10.4us 10.6us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
0
V1TD = 5ns
TF = 15ns
PW = 10us
PER = 1ms
V1 = -9.42V
TR = 15ns
V2 = 10.6V
R1
50
U1
DSSM3J328R_P
Reverse Recovery Characteristics
Circuit Simulation result
Evaluation circuit
Comparison Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trj ns 20.000 19.801 -1.00
trb ns 40.000 39.819 -0.45
trr ns 60.000 59.620 -0.63

14. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
14
Reverse Recovery Characteristics Reference
Trj = 20(ns)
Trb = 40(ns)
Conditions: Ifwd = lrev = 0.2(A), Rl = 50
Relation between trj and trb
Example
Measurement

15. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
15
V_VGS
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
-I(VGS)
0A
1mA
2mA
3mA
4mA
5mA
6mA
7mA
8mA
9mA
10mA
VGS
U1
SSM3J328R
0
Ropen
ESD PROTECTION DIODE
Zener Voltage Characteristics
Circuit Simulation result
Evaluation circuit

16. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
16
Zener Voltage Characteristics Reference
IZ = 1(mA)
VZ = 15.72(V) at IZ= 1(mA)
Measurement