Research Progress: Electrodeposition of In2S3 Films
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This document summarizes the research progress of MAQSOOD ALI MUGHAL on the electrodeposition of In2S3 films. It discusses work completed in 2014, including a published paper and conference presentations. It then outlines the plan for Spring 2015, which is to grow and anneal In2S3 film samples using various deposition parameters and annealing treatments. Future goals include further characterization of the samples and preparation of papers based on the results.
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Design and fabrication of new electrodes for photo-electrolysis using a material that is photo-active, stable, corrosion resistant, and cost effective.Progress in Indium (III) Sulfide (In2S3) Buffer Layer Deposition Techniques f...
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Recent progress with indium (III) sulfide (In2S3)-buffered thin film solar cells (TFSC) was briefly reviewed. In2S3 has emerged as a promising low-hazard buffer (or window) material, and has proven to improve the properties of the solar cells, while reducing toxicity. Various deposition techniques have been employed to synthesize In2S3 films on different types of substrates. Until now, atomic layer deposition (ALD) and ionic layer gas atomic reaction (ILGAR) techniques have been the two most successful, yielding maximum energy conversion efficiencies up to 16.4% and 16.1%, respectively. The impact of varied deposition parameters upon the In2S3 film properties and performance of cadmium (Cd)-free solar cells has been outlined. A comparative/operational analysis (solar cell efficiencies above 9% reported for cell area ≤ 1cm2) of various buffer layers used in two primary types of TFSC technology: chalcopyrite (CIS/CIGS)- and CdTe-based solar cells was also performed to measure the progress of In2S3 compared to its counterparts.Indium sulfide for solar applications
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The document describes an experiment to electrodeposit indium sulfide (In2S3) films on molybdenum-coated glass. The experiment varied four factors - deposition voltage, deposition time, composition of the deposition solution, and deposition temperature - at three levels each in a 27-run factorial design. The films were characterized using energy dispersive x-ray spectroscopy to determine the sulfur-to-indium ratio and digital image analysis to measure crack density. Statistical analysis using Minitab found that deposition voltage had the greatest effect on both crack density and sulfur-to-indium ratio of the deposited films.Electrodeposition of Indium Sulfide
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Electrodeposition can enable stoichiometric control of deposited samples through variation of electroplating potential. We demonstrate an in-situ technique for deposit analysis and stoichiometric control by interspersing periods of open-circuit during deposition. Opening the circuit in an organic Cu-In-S plating bath allows greater incorporation of Cu, In, and/or S into deposited films, based upon the open-circuit voltage the film/electrolyte interface is allowed to achieve. With the same deposition potential, samples can be made to vary from highly Cu-rich to highly In-rich through selection of an appropriate open-circuit voltage limit.Elemental sulfur-based electrodeposition of indium sulfide films
We report research on electrodeposition of indium sulfide films, with In2S3 a less hazardous alternative to CdS buffer layers in solar cells. Numerous organic and aqueous/organic electrolytes of InCl3, NaCl, and elemental sulfur were investigated, including several glycols and amides. Temperatures ranged from 80-170°C, and deposition voltages from -0.6 to -1.2 V (Ag/AgCl with organic filling solution). Substrates included indium tin oxide-on-glass, molybdenum, and titanium, with indium or graphite anodes. Rapid stirring was used. Deposition was sluggish in all baths. Uniformity and adherence were only moderate, with irregular coverage and cracking-and-flaking sometimes evident. The best baths were ethylene glycol or 1, 2-propanediol-based, with golden-yellow films, nominally In2S3-xOx, depositing typically heavier around the substrate edges. With low temperatures and/or large currents, brown films more rich in indium sometimes formed. Cyclic voltammetry elucidated onset potentials, secondary reactions, and photoactivity, with the greatest anodic photocurrents arising from In2S3's n-type conductivity occurring with mixed ethylene glycol/propionic acid/water baths. Scanning electron microscope photographs indicated a compact small grain microstructure for yellow films. Energy dispersive X-ray analysis and photoelectron spectroscopy data indicate up to 15% oxygen content.
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In2S3 has received attention as an alternative to CdS as the buffer layer in heterojunction solar cells. Although having a bandgap of 2.0 eV relative to 2.5 eV for CdS, the lower toxicity and environmental impact of indium relative to cadmium, and significant photosensitivity, compel ongoing research [1]. Indium sulfide thin films were deposited onto molybdenum-coated glass (SiO2) substrates by electrodeposition from organic baths (ethylene glycol-based) containing indium chloride (InCl3), sodium chloride (NaCl), and sodium thiosulfate (Na2S2O3.5H2O), the latter used as an additional sulfur source along with elemental sulfur (S). The Taguchi method was used to optimize the deposition paramters so as to minimize non-uniformity, cracks, and improper stoichiometry. The measured performance characteristics (molar ratio (In:S) and crack density) for all of the In2S3 films were calculated to analyze the effect of each deposition factor (deposition voltage, deposition temperature, composition of solution, and deposition time) involved in the electrodeposition process by calculating the sensitivity (signal to noise, S/N, ratios).A Statistical Approach to Optimize Parameters for Electrodeposition of Indium...
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Within the last few years, there has been notable progress in understanding the growth mechanisms of semiconductor thin films for photovoltaic (PV) applications. Electrodeposition continues to be a complex deposition technique that can lead to regions of low quality (for example, cracks) in films. Such cracks can form porous zones on the substrate and diminish the heterojunction interface quality of a PV cell. In this paper, electrodeposition of In2S3 films was systematically and quantitatively investigated by varying electrodeposition parameters including bath composition, current density, deposition time, and deposition temperature. Their effects upon the morphology, composition, and film growth mechanism were studied with the help of scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), and digital imaging analysis (using fracture and buckling analysis software). In addition, the effect of different annealing treatments (200 oC, 300 oC, and 400 oC in air) and coated glass-substrates (Mo, ITO, and FTO) upon the properties of the In2S3 films was analyzed. Furthermore, the Taguchi/Design of Experiments (DOE) Method was used to determine the optimal electrodeposition parameters in order to improve the properties.
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Research Progress: Electrodeposition of In2S3 Films
- 1. Research Progress: Electrodeposition of In2S3 Films MAQSOOD ALI MUGHAL 50266185 02/11/2015 2015 Spring Weekly Research Meeting February 11th , 2015 Electronics Lab LSW 156 Arkansas State University Advisor: Dr. Robert
- 2. 2014 Highlights Spring 2014 Paper published in Journal of Nanomaterials on “Optimization of the Electrodeposition Parameters to Improve the Stoichiometry of In2S3 Films for Solar Applications using the Taguchi Method” (April 11th ,2014). Summer 2014 (1) Poster presentation at 40th IEEE Photovoltaic Specialists Conference (8-13 June 2014). (2) Conference proceeding publication at 40th IEEE Photovoltaic Specialists Conference (June 2014) on “Morphological and Compositional Analysis of Electrodeposited Indium Sulfide (In2S3) Films,” Denver, CO. (3) Passed both candidacy exams (July 2014). Fall 2014 (1) Paper submitted for publication in IEEE Journal of Photovoltaics on “Morphological and Compositional Analysis of Electrodeposited Indium Sulfide (In2S3) Films” (October 2014). (2) Dissertation Proposal Submitted (October 2014). (3) Passed proposal defense (November 2014). (4) Finished proposed coursework.
- 3. Spring 2015 Grew a mix batch of 25 samples with following deposition parameters: (1) 0.75 mA/cm2 , 0.875 mA/cm2 , 1 mA/cm2 (2) -0.62 V (3) -0.685 V Composition of solution: 0.1M S + 0.1M Na2S2O3.5H2O Stir rate: 250 rpm Deposition Temperature: 150 o C Substrate: Mo, FTO
- 4. Annealing Treatment In2S3 films crystallinity will be studied as a function of annealing treatment by. Annealing treatment includes the following: (1) Intense pulse light (IPL) treatment (3 different intensities) (2) Oven-based annealing in the presence of inert gas (150, 200, and 250 o C for 2 hr) Labelled 15 Samples have already been given to Dr. Seok on February 5th , 2015.
- 5. Papers in preparation/publication process Paper submitted to IEEE Journal of Photovoltaics was not accepted (December 9th , 2015). Same paper after slight modification was submitted to Journal of Electrochemical Society (January 30th , 2015). “Morphological and Compositional Analysis of Electrodeposited Indium Sulfide (In2S3) Films” Paper in preparation for publication in Solar Energy Materials and Solar Cells. “A Review on Record Efficiencies for Indium (III) Sulfide (In2S3)- based Thin Film Solar Cells (TFSC) and Recent Developments “
- 6. Future Work/Goals Characterization (mainly XRD) of annealed samples. Study and analyze the data. Prepare a paper based on experimental results and observations. Use of mapping feature to study the elemental distribution. Thickness measurements.
- 7. Future Work/Goals Characterization (mainly XRD) of annealed samples. Study and analyze the data. Prepare a paper based on experimental results and observations. Use of mapping feature to study the elemental distribution. Thickness measurements.