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INTRODUCTION TO RADIATION
TECHNOLOGIES
Dr. Sergey Korenev

1
Radiation technologies based on the irradiation of condensed matter
( product) by electron beam, X-rays and photons (gamma).
The low level of kinetic energy of particles ( 0.1-10 MeV) allows to
make radiation safety technologies.
Radiation technologies found large applications in the industry and
our life: curing of polymers, treatment of cables, semiconductors,
sterilization of medical products, X-imaging, CT and etc.

2
Market
STERILIZATION

X-RAY IMAGING AND CT

MATERIALS

MICROWAVE GENERATION

PLASMA CHEMISTRY

SCIENCE

5%

5%
30%

15%

15%

30%

3
General concept of beam
technologies
ELECTRO-KINETIC TRANSFORMER
OF ENERGY
Energy storage
Capacitor
E = CU2/2

Potential
energy

Charge particle
transformer
E = N*mv2/2

Kinetic
energy

Object condensed
matter

Dissipation
of energy

Small size of particles, high speed,
penetration and depth of penetration
depends on kinetic energy
4
Electron beam technologies
Electron
Accelerator
Electrons

Product
Control of absorbed
doses
5
Absorbed dose
Absorbed dose

Dose max
Acceptable
absorbed dose
Dose min
Dose min

0

Dmax  Dmin
Dave 
2

Acceptable thickness
for irradiation

Thickness of product
6
Radiation technologies
 The time of delivered of energy of beam ( absorbed dose) is very

important for processes in the irradiated product.

 The decreasing of this time of leads to new type of radiation

technologies and processes – adiabatic radiation technologies.



The main benefits of adiabatic radiation technologies:
* saving of stoichiometric relationships for complex materials;
* short time of dissipation of beam energy;
* new physical properties and synthesis of new materials.
* surface modification of materials.

7
Beam current

Adiabatic radiation
technologies present
irradiation of condensed
mater by pulsed beams,
when beam current
pulse duration is low in
comparison with time
thermal constant.

Thickness of irradiated material

Adiabatic radiation technologies

Thermal constant of
irradiated material

Time

Time

8
Adiabatic irradiation
Penetration of
E-beam beam: X =F ( W)

 The distribution of temperature

Absorbed e-beam
dose

irradiated products is not high.

Sample

Temperature
gradient

in the irradiated sample as a
result of dissipation of energy
has a step character on the
depth of penetration of beam or
is close to it and as a result of it
average temperature of

Distance
9
Process with irradiated material
Beam
current
time

Temperature
1

2
3

time
10
Applications of adiabatic radiation
technologies
*
*
*
*
*
*

Semiconductors.
High Temperature Superconductors.
Plasma Chemistry.
Nanotechnologies.
Food Irradiation.
Sterilization.

11
Semiconductors
 Surface modification of

semiconductors with saving of
stoichiometric relationships.
 Rapid annealing.
 Re-crystallization.
 Synthesis of semiconductor
structures.

12
High Temperature
Superconductors
 Surface modification of HTSC.
 Surface melting and re-

crystallization for Increasing of
critical current.

13
Plasma Chemistry
 Generation of free radicals for chain chemical

reactions.
 Generation of ozone.
 CVD deposition of films.
 Destruction of toxic components and gases from
electrical power stations (SOx, NOx), chemical
productions.

14
Nanotechnologies
 Surface modification of materials.

 Synthesis of nanomaterials: nanorods

and etc.
 PTFE lubricants for quality printing,
engines and etc.

15
Food Irradiation
 Low dose (only 3 kGy)

for food irradiation.
 Irradiation of meet and
other products without
change of their
properties.
 Simple, safety and
acceptable equipment
for small companies.

16
Sterilization
 Surface sterilization of packaging materials,

medical tools, lumens and etc.
 Fast sterilization in compared with VHP,

ozone, thermal sterilization.
 Simple and cheaper systems for sterilization.

17
Equipment
 1. Electron accelerators.
 2. X-rays sources.

18
Structure of industrial irradiator
Conveyer
system
Product
Vacuum system

Electron
gun

Accelerating
structure

X-ray
target

Dose
control

Beam
scanning
system

Modulator

Control and operation system

19
Electron accelerators

1. RF Linac: pulsed and CW.
2. DC Linac.
3. Linear Induction accelerator.
4. Rhodotron.
5. Betatron.
6. Microtron.
7. Diode pulsed high current accelerators.

20
Example of companies for
electron accelerators
1. Ion Beam Applications ( IBA), Belgium
2. MEVEX, Ontario, Canada
3. Titan, USA
4. VARIAN, USA
5. Mitsubishi, Japan
6. Linac Technologies, France
7. Advanced Electron Beam (AEB), USA
8. Beam & Plasma Technologies, USA

21
Main problem of e-beam
Optimal thickness of irradiated product
with low density

penetration to
irradiated product.

Thickness, cm

 Small depth of

 Alternative to e-beam

35
30
25
20
15
10
5
0

Density 0.1
g/cc

Density
1 g/cc
1

3

4

5

6

7

8

9

10

Kinetic energy of electrons, MeV

is X-rays:

Optimal thickness of irradiated product

Thickness, cm

X-ray system includes:
1. Electron accelerator
2. X-ray target

2

3.5
3
2.5
2
1.5
1
0.5
0

Density
1 g/cc
Density
2g/cc
Density
3 g/cc

1

2

3

4

5

6

7

8

9

10

Kinetic energy of electrons, MeV

22
X-rays sources
 Bremsstrahlung X-Rays

 Simple method for production of X-rays

using irradiation of target by electron
beams.

23
X-ray targets
Problems:
1. Low factor of conversion e-beam to Xrays
Kinetic energy by
electron, MeV
0.5
1.0
2.0
5.0
10.0

Coefficient of
conversion for Ta
target, %
1.2
2.3
3.5
8
13

Coefficient of
conversion for Al
target, %
0.1
0.3
0.5
2.5
5

2. High Thermal loads

24
X-ray targets
1. Broad energy spectra
Ex~ 0.7*Ee

for

0.2 <Ee< 07 [MeV]

Ex ~ 0,6*Ee

for

0.7<Ee< 3 [MeV]

Ex ~ 0.5*E e

for

3<Ee<10 [MeV]

2. Different absorption factor of X-rays
25
Pulsed electron accelerators
DIAGNOSTIC EQUIPMENT FOR BEAM AND FOR IRRADIATED MATERIALS

HIGH
VOLTAGE
SUPPLY

HIGH
VOLTAGE
GENERATOR

ELECTRON
SOURCE

CHAMBER FOR
IRRADIATION

VACUUM SYSTEM

26
Principle of pulsed diode
electron accelerator
Voltage
Time

Cathode

Cathode
plasma
Anode

Beam current
Time

Electrons
Moving cathode
plasma
Limit for beam pulse
duration

High Voltage Generator

Nanosecond electron beam

27
High field emission cathodes
Explosive electron
emission

Current of vacuum arc

J4
J3

1. Carbon-fiber
cathodes.
2. Carbon
nanotube
cathodes.
3. Graphite
cathodes.

Current density

J2

Explosive
electron beam
current
Generation of
cathode plasma

Autoemission
current

J1
0

10 - 20 nsec

1- 10 nsec

1-200 nsec

1-10
nsec

Time
28
Carbon-Fiber Cathode

29
Pulsed electron accelerators
from Beam & Plasma Technologies
Main parameters of pulsed electron accelerators:
1. Kinetic energy: 10 – 1000 keV.
2. Beam current: 1- 5000 A.
3. Pulse duration: 5 – 1000 nsec.
4. Mode of operation: electrons and X-rays.

30
Dose monitoring and control
 The routine control of absorbed dose by

film dosimeters.
 Real-time (On-line) system for monitoring
and control of absorbed dose in
irradiated product.

31
Radiation safety
The electron accelerators have main advantage in compared
with isotope irradiators in the operation.
The electrical power system allows to make flexible operation
with beam in compared with isotope source. The isotope
source is source of continuous irradiation.
Electron accelerators allows to work with low kinetic energy
(from few keV to hundred keV); it makes simple radiation
safety.

Electron accelerators in future can change the isotope
sources, that will make more safety and secure radiation
technologies.
32
Conclusion
 The considered topic of introduction to

radiation technologies has education
and business goals.
 The radiation technologies present the

future of high technologies and our life.

33

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Radiation technologies

  • 2. Radiation technologies based on the irradiation of condensed matter ( product) by electron beam, X-rays and photons (gamma). The low level of kinetic energy of particles ( 0.1-10 MeV) allows to make radiation safety technologies. Radiation technologies found large applications in the industry and our life: curing of polymers, treatment of cables, semiconductors, sterilization of medical products, X-imaging, CT and etc. 2
  • 3. Market STERILIZATION X-RAY IMAGING AND CT MATERIALS MICROWAVE GENERATION PLASMA CHEMISTRY SCIENCE 5% 5% 30% 15% 15% 30% 3
  • 4. General concept of beam technologies ELECTRO-KINETIC TRANSFORMER OF ENERGY Energy storage Capacitor E = CU2/2 Potential energy Charge particle transformer E = N*mv2/2 Kinetic energy Object condensed matter Dissipation of energy Small size of particles, high speed, penetration and depth of penetration depends on kinetic energy 4
  • 6. Absorbed dose Absorbed dose Dose max Acceptable absorbed dose Dose min Dose min 0 Dmax  Dmin Dave  2 Acceptable thickness for irradiation Thickness of product 6
  • 7. Radiation technologies  The time of delivered of energy of beam ( absorbed dose) is very important for processes in the irradiated product.  The decreasing of this time of leads to new type of radiation technologies and processes – adiabatic radiation technologies.  The main benefits of adiabatic radiation technologies: * saving of stoichiometric relationships for complex materials; * short time of dissipation of beam energy; * new physical properties and synthesis of new materials. * surface modification of materials. 7
  • 8. Beam current Adiabatic radiation technologies present irradiation of condensed mater by pulsed beams, when beam current pulse duration is low in comparison with time thermal constant. Thickness of irradiated material Adiabatic radiation technologies Thermal constant of irradiated material Time Time 8
  • 9. Adiabatic irradiation Penetration of E-beam beam: X =F ( W)  The distribution of temperature Absorbed e-beam dose irradiated products is not high. Sample Temperature gradient in the irradiated sample as a result of dissipation of energy has a step character on the depth of penetration of beam or is close to it and as a result of it average temperature of Distance 9
  • 10. Process with irradiated material Beam current time Temperature 1 2 3 time 10
  • 11. Applications of adiabatic radiation technologies * * * * * * Semiconductors. High Temperature Superconductors. Plasma Chemistry. Nanotechnologies. Food Irradiation. Sterilization. 11
  • 12. Semiconductors  Surface modification of semiconductors with saving of stoichiometric relationships.  Rapid annealing.  Re-crystallization.  Synthesis of semiconductor structures. 12
  • 13. High Temperature Superconductors  Surface modification of HTSC.  Surface melting and re- crystallization for Increasing of critical current. 13
  • 14. Plasma Chemistry  Generation of free radicals for chain chemical reactions.  Generation of ozone.  CVD deposition of films.  Destruction of toxic components and gases from electrical power stations (SOx, NOx), chemical productions. 14
  • 15. Nanotechnologies  Surface modification of materials.  Synthesis of nanomaterials: nanorods and etc.  PTFE lubricants for quality printing, engines and etc. 15
  • 16. Food Irradiation  Low dose (only 3 kGy) for food irradiation.  Irradiation of meet and other products without change of their properties.  Simple, safety and acceptable equipment for small companies. 16
  • 17. Sterilization  Surface sterilization of packaging materials, medical tools, lumens and etc.  Fast sterilization in compared with VHP, ozone, thermal sterilization.  Simple and cheaper systems for sterilization. 17
  • 18. Equipment  1. Electron accelerators.  2. X-rays sources. 18
  • 19. Structure of industrial irradiator Conveyer system Product Vacuum system Electron gun Accelerating structure X-ray target Dose control Beam scanning system Modulator Control and operation system 19
  • 20. Electron accelerators 1. RF Linac: pulsed and CW. 2. DC Linac. 3. Linear Induction accelerator. 4. Rhodotron. 5. Betatron. 6. Microtron. 7. Diode pulsed high current accelerators. 20
  • 21. Example of companies for electron accelerators 1. Ion Beam Applications ( IBA), Belgium 2. MEVEX, Ontario, Canada 3. Titan, USA 4. VARIAN, USA 5. Mitsubishi, Japan 6. Linac Technologies, France 7. Advanced Electron Beam (AEB), USA 8. Beam & Plasma Technologies, USA 21
  • 22. Main problem of e-beam Optimal thickness of irradiated product with low density penetration to irradiated product. Thickness, cm  Small depth of  Alternative to e-beam 35 30 25 20 15 10 5 0 Density 0.1 g/cc Density 1 g/cc 1 3 4 5 6 7 8 9 10 Kinetic energy of electrons, MeV is X-rays: Optimal thickness of irradiated product Thickness, cm X-ray system includes: 1. Electron accelerator 2. X-ray target 2 3.5 3 2.5 2 1.5 1 0.5 0 Density 1 g/cc Density 2g/cc Density 3 g/cc 1 2 3 4 5 6 7 8 9 10 Kinetic energy of electrons, MeV 22
  • 23. X-rays sources  Bremsstrahlung X-Rays  Simple method for production of X-rays using irradiation of target by electron beams. 23
  • 24. X-ray targets Problems: 1. Low factor of conversion e-beam to Xrays Kinetic energy by electron, MeV 0.5 1.0 2.0 5.0 10.0 Coefficient of conversion for Ta target, % 1.2 2.3 3.5 8 13 Coefficient of conversion for Al target, % 0.1 0.3 0.5 2.5 5 2. High Thermal loads 24
  • 25. X-ray targets 1. Broad energy spectra Ex~ 0.7*Ee for 0.2 <Ee< 07 [MeV] Ex ~ 0,6*Ee for 0.7<Ee< 3 [MeV] Ex ~ 0.5*E e for 3<Ee<10 [MeV] 2. Different absorption factor of X-rays 25
  • 26. Pulsed electron accelerators DIAGNOSTIC EQUIPMENT FOR BEAM AND FOR IRRADIATED MATERIALS HIGH VOLTAGE SUPPLY HIGH VOLTAGE GENERATOR ELECTRON SOURCE CHAMBER FOR IRRADIATION VACUUM SYSTEM 26
  • 27. Principle of pulsed diode electron accelerator Voltage Time Cathode Cathode plasma Anode Beam current Time Electrons Moving cathode plasma Limit for beam pulse duration High Voltage Generator Nanosecond electron beam 27
  • 28. High field emission cathodes Explosive electron emission Current of vacuum arc J4 J3 1. Carbon-fiber cathodes. 2. Carbon nanotube cathodes. 3. Graphite cathodes. Current density J2 Explosive electron beam current Generation of cathode plasma Autoemission current J1 0 10 - 20 nsec 1- 10 nsec 1-200 nsec 1-10 nsec Time 28
  • 30. Pulsed electron accelerators from Beam & Plasma Technologies Main parameters of pulsed electron accelerators: 1. Kinetic energy: 10 – 1000 keV. 2. Beam current: 1- 5000 A. 3. Pulse duration: 5 – 1000 nsec. 4. Mode of operation: electrons and X-rays. 30
  • 31. Dose monitoring and control  The routine control of absorbed dose by film dosimeters.  Real-time (On-line) system for monitoring and control of absorbed dose in irradiated product. 31
  • 32. Radiation safety The electron accelerators have main advantage in compared with isotope irradiators in the operation. The electrical power system allows to make flexible operation with beam in compared with isotope source. The isotope source is source of continuous irradiation. Electron accelerators allows to work with low kinetic energy (from few keV to hundred keV); it makes simple radiation safety. Electron accelerators in future can change the isotope sources, that will make more safety and secure radiation technologies. 32
  • 33. Conclusion  The considered topic of introduction to radiation technologies has education and business goals.  The radiation technologies present the future of high technologies and our life. 33