1. 1
Personal details
NAME: Le Van Hai
Date of Birth: 22/02/1976
Nationality: Vietnam
Address: Umezono 2-33-26 Gakuen Oashisu 205,
305-0045, Tsukuba Ibaraki, Japan
Cell phone: +81 80-5311-6292 ; Email: hailevanbk@yahoo.com
Position: Postdoc researcher at Nanoelectronics Research Institute, National Institute of
Advanced Industrial Science and Technology (AIST),
Office address: Room A314, Central2, 1-1-1 Umezono, Tsukuba, Ibaraki
305-8568 Japan ; Email: le-haivan@aist.go.jp
Fabrication Engineer / Material Science
I have comprehensive experience work and study in material science, nonvolatile memory
device, semiconductor processing and developing of CMOS compatible technology including
oxide growth, wafer cleaning, wet and dry etch techniques, ion implantation, doping, and
photo- and electron beam-lithography, as well as how these techniques are integrated
together for the complete fabrication of functional application devices.
Addition, my background has given me the hands-on experience in deposition of thin film
materials, fabrication technology of NEMS/ MEMS devices that would contribute to your
group’s goal and objectives.
SUMMARY AND ACCOMPLISMENT
 I have spent my time of graduate student, post-doctoral researcher to achieve a
success working on synthesis and characterization of thin films and fabrication of
MEMS, CMOS compatible devices, nano-device applications.
 Fabrication and characterization of the world’s most downsized Fe-FET of
Pt/SrBi2Ta2O9/HfAlO/Si ferroelectric gate field-effect transistors with 0.54m-,
0.26m- , 0.18m- and 80nm-gate lengths .
 Employing advantages of hard-mask, inductively coupled plasma (ICP) RIE etching
and e-beam lithography to realize a down-scaling of Pt/SrBi2Ta2O9/HfAlO/Si
FeFET device in 4F2 memory cell array was demonstrated in practical
 The first 64 kb Fe-NAND flash memory array with the all cells accessible has been
produced by developing a FeFET circuit integration technology. With lowering the
bit-line voltages to 1V and word-line voltages to 6V at the data program the Fe-
NAND flash memory will have about 1/7 as small power consumption as the
conventional NAND flash memory.
 Successes in improvement retention property of metal-ferroelectric-insulator-
semiconductor (MFIS) of Pt/SBT/SiO2/Si by applying nitrogen and oxygen radical
irradiation treatment.

2. 2
 Preparation of SBT, SBTN, ZnO, PZT thin films by Flash- MOCVD system which
show of high speed deposition and high quality of crystalline thin films.
 Fabrication and characteristic of a tuneable photonic crystal filter device of Fabry-
Perot interferometer using (Pb1-xLax)(ZryTi1-y)1-0.25xO3 (PLZT) thin film as defect
layer. The largest electro-optic coefficient of 15.56 pm/V of PLZT thin film on ITO
substrate was evaluated from experimental and simulation results.
EDUCATION
2004 - 2008 PhD Apply Physic Engineering
Osaka University, Japan
RESEARCH THESIS
Preparations of SBT and PLZT Thin Films and Their Applications to
Ferroelectric Gate Structure and Photonic Crystal Devices
Motivations of the study: Developing of an effective method to improve the
electrical properties of metal–ferroelectric–insulator–semiconductor (MFIS)
memory, a novel treatment process of radical irradiations was introduced. And
another goal of work was investigation of electro-optical properties of (Pb, La)(Zr,
Ti) O3 (PLZT) ferroelectric thin film, it was utilized in tunable photonic crystal filter.
The study contents: First, I had succeeded in improvement of electrical and
retention properties of Pt/SrBi2Ta2O9 (SBT)/SiO2/n-Si MFIS structure by using
novel methods of nitrogen and oxygen irradiation treatments. In that, nitrogen,
oxygen radical irradiations were used to treated and improve the surfaces of SBT
ferroelectric and SiO2 insulator layers. Modifications of the treatments on thin film
were investigated by X-ray Photoelectron Spectroscopy (XPS), EPMA, SERS,
XRF, Ultraviolet Photo Yield Spectroscopy (UV-PYS), SEM, TEM and AFM
images. Incorporation of nitrogen in surface layers of SiO2 and SBT was confirmed
and roughness of SBT and thickness of SBT/SiO2 inter-layer were reduced. By this
we have achieved a result as the leakage current reduced three orders and the
memory retention time could be elongated to be longer than 2 weeks.
This work was published in three papers (Le Van Hai et al., 2006, 2008, 2009). The
invention of nitrogen radical irradiation treatment for ferroelectric memory was
registered for a patent by Osaka University (金島 岳, ルハイ ヴァン, 奥山 雅則,
2006).
- Second, I have designed, fabricated and characterized a tunable optical filter
which was combined from one-dimensional photonic crystal with a PLZT
ferroelectric thin film as a defect layer. In this device incident light was modulated
by an external electric field. With advantages of using PLZT and new filter
structure, the filter shown higher modulated factor and higher speed switching than
the other structures having the same function.
The photonic crystal structure of 5 periodic layers of SiO2/TiO2 dielectric films were
prepared on glass plate with thickness of 110/66nm, respectively. The transparent
electrode of indium tin oxide (ITO) and oriented PLZT film were deposited on the
surface of the photonic crystal structure, subsequently. It is found that the
transmission peaks are shifted to longer wavelengths by a given drive voltage. The
shift of the 2nd main peak at 650 nm is 5.23 nm when 100 V was applied for PLZT
defect layer. A large electro-optic coefficient r13 of the PLZT thin film of 23.4 pm/V
was estimated, which is almost 56% of the bulk value. This work was published in
a conference paper (Le Van Hai et al., 2008).

3. 3
2000 - 2002 Master Electronic Engineering
University of Hanoi University of Science and Technology
MASTER THESIS
A Study of Optical Switching Devices Using in All-optical Network
A motivation of the study: Optical switches are network elements that will play a
key role in Wavelength Division Multiplexing (WDM) networks to provide more
reconfiguration flexibility and network survivability, hence the need for detail study
of practical techniques for the implementation of such switches in the optical
domain and evaluation of bit error rate (BER).
The study contents: This dissertation aims to present a study about optical
switching technologies as also a development and implementation work of all-
optical switching devices, based on the WDM technologies.
Firstly, the state of the art in optical switching was presented. The most common
technologies applied to the development of optical switches were discussed.
Secondly, a simulator model for the next generation optical networks was
developed and simulated by MATLAB, exploited the potential of the classical
queuing theory: in this way the problem of the optimum assignment of the available
resources among the different elements of a network is faced and can be solved
through a heuristic approach. Some aspects related to the simulation accuracy are
exposed, to make clear the statistical significance of the results obtained with.
WORKING EXPERIENCES
2008- Current Postdoctoral Researcher
National Institute of Advanced Industrial Science and Technology (AIST),
Japan.
- I have experienced in semiconductor processing and developing of CMOS
compatible technology including oxide growth, wafer cleaning, wet and dry etch
techniques, ion implantation, doping, and photo- and electron beam-lithography, as
well as how these techniques are integrated together for the complete fabrication
of functional semiconductor devices.
- I have experienced in thin film preparations of metal, dielectric and ferroelectric
materials by physical and chemical methods such as pulsed laser deposition
(PLD), plasma sputtering, e-beam evaporation, metal-organic deposition, chemical
vapor deposition (CVD), metal-organic chemical vapor deposition (MO-CVD),
plasma sputtering.
- Major fabrication steps of MEM-, nanostructure devices include photolithography,
e-beam lithography (EBL), reactive ion etching (RIE), inductively coupled plasma
RIE (ICP RIE), Ion milling.
- I have become proficient in many characterization techniques for MEM-,
nanostructure devices including XRR and XRD, ICP, TEM, SEM, EBSD, AFM.
- LabVIEW and MATLAB programs for data collection and analysis. Design and
construction of measurement systems for characterization of memory devices and
tunable photonic crystal filter.
- Responsibilities included care of clean room and semiconductor analyzed systems.
- Designed a measurement systems for characterization of non-volatile memory
devices
2004 -2008 Research Assistant / Teaching Assistant
Osaka University, Japan
As a research assistant:
- Developed nitrogen and oxygen radical irradiation systems to apply for
improvement retention property of metal-ferroelectric-insulator-semiconductor
(MFIS).

4. 4
- Prepared SBT, SBTN, ZnO, PZT thin films on 6-inch p-Si (111) wafer a by Flash-
MOCVD.
- Fabricated and analyzed of a tuneable photonic crystal filter of Fabry-Perot
interferometer using PLZT thin film as defect layer.
As a teaching assistant:
- Demonstrated field work techniques and assisted professors with lessons.
- Trained undergraduate students in field work and using laboratory software
(LabVIEW and MATLAB).
2000 -2004 Teaching Assistant
Hanoi University of Science and Technology, Vietnam
- Developed a software program to design and calculate parameters of optical
communication systems.
- Established an experiment system to demonstrate an optical communication.
- Evaluated students’ homework, tests, and field work.
LANGUAGES
Vietnamese native, Fluent in English, Japanese.
SKILLS
- Programming: Visual Basic, Matlab, C++
- Scientific: Igor, Mathematica, Origin, LabVIEW
- OS: Windows, MacOS X, Linux
- Productivity: MS Office, Open Office, Photoshop CS, Illustrator, CAD
REFERENCES
1. Prof. Masanori OKUYAMA,
Graduate School of Engineering Science, Osaka University, Japan
Fax:+81-6-6850-6341, Tel:+81-6-6850-6330, e-mail: okuyama@insd.osaka-u.ac.jp
2. Prof. Shigeki SAKAI,
National Institute of Advanced Industrial Science and Technology (AIST), Japan
Tel: +81-2-9861-5468, e-mail: shigeki.sakai@aist.go.jp
3. Senior Researcher Mitsue Takahashi
National Institute of Advanced Industrial Science and Technology (AIST), Japan
Tel: +81-2-9861-5063, e-mail: mitsue-takahashi@aist.go.jp
More available upon request.

5. 5
PUBLICATIONS
Journals and Full Papers
1. Le Van Hai, Mitsue Takahashi, Wei Zhang and Shigeki Sakai, “100-nm-size
ferroelectric-gate field-effect transistor with 108
-cycle endurance,” Japanese Journal
of Applied Physics 54, 088004 (2015).
2. Le Van Hai, Mitsue Takahashi and Shigeki Sakai, “Novel process for widening
memory window of sub-200 nm ferroelectric-gate field-effect transistor by
ferroelectric coating the gate-stack sidewall,” Semicond. Sci. Technol. 30, Jan.
2015, pp. 15024-15030(7).
3. Le Van Hai, Mitsue Takahashi and Shigeki Sakai, “Fabrication and
Characterization of Sub-0.6-μm Ferroelectric-Gate Field-effect Transistors,”
Semicond. Sci. Technol. 25, Aug. 2010.
4. Le Van Hai, Takeshi Kanashima, Masanori Okuyama, “Enhancement of Memory
Retention Time of Metal/Ferroelectric/Insulator/Semiconductor Structure by Using
Fast Annealing and Nitrogen Radical Irradiation”, Journal of the Korean Physical
Society, Vol. 55, No. 2, August 2009.
5. Le Van Hai, Takeshi Kanashima, Masanori Okuyama, “Enhancement of Memory
Retention Time of MFIS with SBT Ferroelectric and SiO2 Buffer Layers Treated by
Nitrogen Radical Irradiation,” Integrated Ferroelectrics 96, p. 27- 39, 2008.
6. Le Van Hai, Takeshi Kanashima, Masanori Okuyama, “Improvement of memory
retention in metal-ferroelectric-insulator-semiconductor structure by SrBi2Ta2O9
surface modification induced by nitrogen and oxygen radical irradiation,”
Integrated Ferroelectrics 84, p. 179 - 188, 2006.
7. Tran Quoc Dung, Le Van Hai, “A method of BER calculation for designing optical
telecommunication systems,” Post-Telecommunication Journal, Special issue 4, p.
20 - 23, Oct. 2000.
Paper Publications of Conferences
1. L.V. Hai, M. Takahashi, W. Zhang and S. Sakai, “108
Endurance Nonvolatile
Memory Transistor with 100 nm Metal Gate.” the 2014 International Conference
on Solid State Devices and Materials (SSDM2014), Sep. 8-11, 2014, pp. 32-36.
2. Shigeki Sakai, Xizhen Zhang, Le Van Hai, Wei Zhang, “Downsizing and memory
array integration of Pt/SrBi2Ta2O9/Hf-Al-O/Si ferroelectric-gate field-effect
transistors.” Non-Volatile Memory Technology Symposium (NVMTS), 2012 12th
Annual, IEEE, pp. 55 – 59.

6. 6
3. Le Hai Van, Mitsue Takahashi, Shigeki Sakai, "0.56 μm-Gate-Length Ferroelectric-
Gate Field-Effect Transistors with Long Data Retention," Extended Abstracts of the
16th
Workshop on Gate Stack Technology and Physics, Thin Films and Surface
Physics Division and Silicon Technology Division of THE JAPAN SOCIETY OF
APPLIED PHYSYCS, pp.23-26, 2011/01.
4. Le Van Hai, Mitsue Takahashi and Shigeki Sakai, “Recent Progress in Downsizing
FeFETs for Fe-NAND Application.” MRS Proceedings, 1337, mrss11-1337-q02-02
doi:10.1557/opl.2011.977, May 2011, USA.
5. Mitsue Takahashi, Xizhen Zhang, Le Van Hai, Kang Yan, Wei Zhang, Kousuke
Miyaji, Ken Takeuchi and Shigeki Sakai, “NAND flash memory by ferroelectric-
gate field-effect-transistor integration,” The 23rd
International Symposium on
Integrated Functionalities 2011 (ISIF2011), June 2011.
6. Le Hai Van, Mitsue Takahashi, Shigeki Sakai, “Downsizing of Ferroelectric-Gate
Field-Effect-Transistors for Ferroelectric-NAND Flash Memory Cells”,
Proceedings of the 3rd
International Memory Workshop, IEEE, pp.175-178, May
2011, USA.
7. Le Van Hai, Takeshi Kanashima, Masanori Okuyama, “Characteristics of MFIS
structure were improved by fast annealing and nitrogen radical treatment,” The 7th
Japan-Korea Conference on Ferroelectricity proceeding,” p. P-08-36, Aug. 2008,
Jeju, Korea.
8. Le Van Hai, Takeshi Kanashima, Hisahito Ogawa and Masanori Okuyama,
“Tunable optical filter of photonic crystal using electrooptic PLZT thin film,” The
20th
International Symposium on Integrated Ferroelectrics (ISIF2008), p. 10E-429-
C, June 2008, Singapore.
9. Le Van Hai, Takeshi Kanashima, Masanori Okuyama, “Data retention time of
MFIS-FET memory structure improved with nitrogen irradiation treatment,” IEEE-
ICCE, 9508395, p.382-386, Jan. 2007, Japan.
10. Le Van Hai, Takeshi Kanashima, Masanori Okuyama, “Improvement of electrical
properties and memory retention in MFIS structure by nitrogen radical irradiation
for SiO2 buffer layer,” The 6th
Japan-Korea Conference on Ferroelectricity
proceeding, p. 49, Aug. 2006, Tohoku University, Sendai, Japan
11. Le Van Hai, Takeshi Kanashima, Masanori Okuyama, “Improvement retention
time of MFIS with SBT ferroelectric and SiO2 buffer layers were treated by
nitrogen plasma radical irradiation,” The 2nd
International Workshop on Materials
Science and Nano-Engineering proceeding, p. 112-113, Mar 2007. Osaka, Japan.
12. Le Van Hai, Takeshi Kanashima, Masanori Okuyama, “Enhancement of memory
retention time of MFIS with SBT ferroelectric and SiO2 buffer layers treated by
nitrogen radical irradiation,” The 19th
International Symposium on Integrated
Ferroelectrics (ISIF2007) proceeding, p. 1B-294-C, May 2007. Bordeaux, France.
13. Le Van Hai, Takeshi Kanashima, Masanori Okuyama, “SiO2 buffer layer was
treated by nitrogen radical to improve electrical properties and memory retention of
MFIS memory gate”, The 1st
IEEC, p. 215 ,Oct 2006, Hanoi ,Viet Nam.
14. Le Van Hai, Masanori Okuyama, “Tunable photonic crystal filter using Fabry-Perot
interferometer with PLZT thin film as defect layer”, The 3rd
International
Workshop on Materials Science and Nano-Engineering proceeding, p. 99, Dec
2007, Awaji Japan.
15. Le Van Hai, Takeshi Kanashima and Masanori Okuyama, “Improvement of
memory retention in metal-ferroelectric-insulator-semiconductor structure by
SrBi2Ta2O9 surface modification induced by nitrogen radical irradiation”, The 18th
International Symposium on Integrated Ferroelectrics (ISIF2006) proceeding, p.
4B-194-C, April 2006, Hawaii USA.

7. 7
16. Tran Quoc Dung, Vu Van San, Le Van Hai, Design calculation for Optical
communication systems, The 25th
Asian-Info-Communications conference
proceeding, p. 369  375, Apr 2001.
Proceedings publications of Conferences
1. Le Van Hai, Mitsue Takahashi and Shigeki Sakai, 0.56μm-Gate-Length
Ferroelectric-Gate Field-Effect Transistors with Long Data Retention, ゲートスタ
ック研究会 ―材料・プロセス・評価の物理, 第１６回研究会, Jan. 2011.
2. Le Van Hai, T. Kanashima and M. Okuyama. Tunable photonic crystal filter having
electro-optic effect of PLZT ferroelectric film, The 69th Autumn Meeting, The
Japan Society of Applied Physics and Related Societies, 3p-K-14, 2008.
3. Le Van Hai, T. Kanashima and M. Okuyama. Using electro-optic effect of PLZT
thin film in application of tunable photonic crystal filter, The 55th
Spring Meeting,
The Japan Society of Applied Physics and Related Societies, 29p-P12-25, 2008.
4. Le Van Hai, T. Kanashima and M. Okuyama, Enhancement of memory retention
time of MFIS with SBT ferroelectric and SiO2 buffer layers treated by nitrogen
radical irradiation, The 55th
Spring Meeting, The Japan Society of Applied Physics
and Related Societies, 30a-P14-33, 2008.
5. Le Van Hai, T. Kanashima and M. Okuyama, Tunable optical filter of photonic
crystal using PLZT thin film, The 68th Autumn Meeting, The Japan Society of
Applied Physics and Related Societies, 6a-ZV-6, 2007.
6. Le Van Hai, T. Kanashima and M. Okuyama. Enhancement of memory retention
time of MFIS with SBT ferroelectric and SiO2 buffer layers treated by nitrogen
radical irradiation, The 54th
Spring Meeting, The Japan Society of Applied Physics
and Related Societies, 29a-SV-3, 2007.
7. Le Van Hai, T. Kanashima and M. Okuyama, “Improved retention property of
metal-ferroelectric-insulator-semiconductor using SrBi2Ta2O9 film surface-
modified by nitrogen radical,” The 53rd
Spring Meeting, The Japan Society of
Applied Physics and Related Societies, 25p-S-6, 2006.
8. 黄裕銘，金島岳，山下馨， Dan Ricinschi，Le Van Hai ，奥山 雅則，
“Zn(DPM)2を原料としたMOCVDによるZnO薄膜の作製と評価,” 第53回応用
物理学関係連合講演会，武蔵工業大学，2006年3月22～26日，24a-P4-17,
2006.
9. Takeshi Kanashima, Le Van Hai, Masao Yoshinaga, and Masanori Okuyama,
“Data retention time of MFIS-FET memory structure improved with nitrogen
irradiation treatment,” IEICE, (SDM2005-267), p. 45-50, Mar 2006, Japan.
Patent
1. 金島 岳, ルハイ ヴァン, 奥山 雅則, “強誘電体メモリ及びその 製造方法”,
(2006), 特願 2006-241846, Japan.
Book chapter
1. Le Van Hai, T. Kanashima and M. Okuyama, “Studies on Electrical and Retention
Enhancement Properties of Metal-Ferroelectric-Insulator-Semiconductor with
Radical Irradiation Treatments,” Ferroelectrics, ISBN: 978-953-307-182-4.