This document provides specifications for four complementary silicon plastic power transistors - the MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP). The transistors are designed for use as high-frequency drivers in audio amplifiers. Key specifications include a high current gain-bandwidth product, TO-220 package, and compliance with RoHS and Pb-free requirements. Electrical characteristics, thermal properties, and safe operating areas are provided along with ordering information.

1. © Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 7
1 Publication Order Number:
MJE15028/D
MJE15028, MJE15030 (NPN),
MJE15029, MJE15031 (PNP)
Complementary Silicon
Plastic Power Transistors
These devices are designed for use as high−frequency drivers in
audio amplifiers.
Features
• High Current Gain − Bandwidth Product
• TO−220 Compact Package
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
MJE15028G, MJE15029G
MJE15030G, MJE15031G
VCEO
120
150
Vdc
Collector−Base Voltage
MJE15028G, MJE15029G
MJE15030G, MJE15031G
VCB
120
150
Vdc
Emitter−Base Voltage VEB 5.0 Vdc
Collector Current − Continuous IC 8.0 Adc
Collector Current − Peak ICM 16 Adc
Base Current IB 2.0 Adc
Total Device Dissipation
@ TC = 25_C
Derate above 25°C
PD
50
0.40
W
W/_C
Total Device Dissipation
@ TA = 25_C
Derate above 25°C
PD
2.0
0.016
W
W/_C
Operating and Storage Junction
Temperature Range
TJ, Tstg −65 to +150 _C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 2.5 _C/W
Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
8 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
120−150 VOLTS, 50 WATTS
TO−220
CASE 221A
STYLE 1
1
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MARKING DIAGRAM
2
3
MJE150xx = Device Code
x = 28, 29, 30, or 31
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MJE150xxG
AY WW
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
4
1
BASE
3
EMITTER
COLLECTOR
2,4
1
BASE
3
EMITTER
COLLECTOR
2,4
NPNPNP

2. MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP)
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2
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 10 mAdc, IB = 0)
MJE15028, MJE15029
MJE15030, MJE15031
VCEO(sus)
120
150
−
−
Vdc
Collector Cutoff Current
(VCE = 120 Vdc, IB = 0)
MJE15028, MJE15029
(VCE = 150 Vdc, IB = 0)
MJE15030, MJE15031
ICEO
−
−
0.1
0.1
mAdc
Collector Cutoff Current
(VCB = 120 Vdc, IE = 0)
MJE15028, MJE15029
(VCB = 150 Vdc, IE = 0)
MJE15030, MJE15031
ICBO
−
−
10
10
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
− 10
mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 0.1 Adc, VCE = 2.0 Vdc)
(IC = 2.0 Adc, VCE = 2.0 Vdc)
(IC = 3.0 Adc, VCE = 2.0 Vdc)
(IC = 4.0 Adc, VCE = 2.0 Vdc)
hFE
40
40
40
20
−
−
−
−
−
DC Current Gain Linearity
(VCE From 2.0 V to 20 V, IC From 0.1 A to 3 A)
(NPN to PNP)
hFE Typ
2
3
Collector−Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 0.1 Adc)
VCE(sat)
− 0.5
Vdc
Base−Emitter On Voltage
(IC = 1.0 Adc, VCE = 2.0 Vdc)
VBE(on)
− 1.0
Vdc
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 2)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 10 MHz)
fT
30 −
MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
2. fT = ⎪hfe⎪• ftest.
0
Figure 1. Power Derating
T, TEMPERATURE (°C)
0
40 60 100 120 160
40
TC
20
60
PD,POWERDISSIPATION(WATTS)
0
2.0
TA
1.0
3.0
80 140
TC
TA
20

3. MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP)
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3
t, TIME (ms)
0.01
0.01 0.05 1.0 2.0 5.0 10 20 50 500 1.0 k0.1 0.50.2
1.0
0.2
0.1
0.05
r(t),TRANSIENTTHERMAL
ZqJC(t) = r(t) RqJC
RqJC = 1.56°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2
SINGLE PULSE
RESISTANCE(NORMALIZED)
Figure 2. Thermal Response
0.5
D = 0.5
0.05
0.3
0.7
0.07
0.03
0.02
0.02 100 200
0.1
0.02
0.01
20
2.0
Figure 3. Forward Bias Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
16
10
0.02
20 120
BONDING WIRE LIMITED
THERMALLY LIMITED
SECOND BREAKDOWN
LIMITED @ TC = 25°C
IC,COLLECTORCURRENT(AMP)
dc
100 ms
5.0 10 150
1.0
50
0.1
5 ms
MJE15028
MJE15029
MJE15030
MJE15031
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation then the curves indicate.
The data of Figures 3 and 4 is based on TJ(pk) = 150_C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150_C. TJ(pk) may be calculated from the data in Figure 2.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
8.0
0
Figure 4. Reverse−Bias Switching
Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
5.0
0
120 140
IC,COLLECTORCURRENT(AMP)
5 V
VBE(off) = 9 V
100 110 150
3.0
130
2.0
1.0
VR, REVERSE VOLTAGE (VOLTS)
10
150
500
1000
50
Figure 5. Capacitances
200
10030107.05.01.5
C,CAPACITANCE(pF)
3.0
20
50
IC/IB = 10
TC = 25°C
3 V
1.5 V
Cib (NPN)
Cob (PNP)100
30
0 V
Cib (PNP)
Cob (NPN)

4. MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP)
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4
Figure 6. Small−Signal Current Gain
f, FREQUENCY (MHz)
1.0 3.0 10
20
100
hfe,SMALLSIGNALCURRENTGAIN
2.0 7.0
5.0
0.5 5.0
50
30
10
0.7
NPN
Figure 7. Current Gain−Bandwidth Product
IC, COLLECTOR CURRENT (AMP)
0.5 2.0
60
100
fT,CURRENTGAIN-BANDWIDTHPRODUCT(MHz)
1.0 10
20
0.1 5.0
90
50
0.2
PNP
(NPN)
(PNP)
VCE = 10 V
IC = 0.5 A
TC = 25°C
0
10
IC, COLLECTOR CURRENT (AMP)IC, COLLECTOR CURRENT (AMP)
hFE,DCCURRENTGAIN
Figure 8. DC Current Gain
Figure 9. “On” Voltage
IC, COLLECTOR CURRENT (AMP)
200
1K
100.1
150
100
70
30
0.2
10
1.0 5.02.00.5
TJ = 25°C
TJ = 150°C
0.1
IC, COLLECTOR CURRENT (AMP)
1.6
1.2
1.0
0.6
0.2
TJ = 25°C
V,VOLTAGE(VOLTS)
NPN — MJE15028 MJE15030 PNP — MJE15029 MJE15031
500
1K
200
100
50
20
10
hFE,DCCURRENTGAIN
VCE = 2.0 V
V,VOLTAGE(VOLTS)
VBE(sat) @ IC/IB = 10
VCE(sat) = IC/IB = 20
VBE(on) @ VCE = 2.0 V
1.8
1.4
1.0
0.8
0.4
0
IC/IB = 10
NPN PNP
100.1 0.2 1.0 5.02.00.5
100.2 1.0 5.02.00.5 100.1 0.2 1.0 5.02.00.5
50
20
500
TJ = 150°C
TJ = - 55°C
VCE = 2 V
TJ = - 55°C
TJ = 25°C
TJ = 25°C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 2.0 V
VCE(sat) = IC/IB = 20
IC/IB = 10

5. MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP)
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5
IC, COLLECTOR CURRENT (AMP)
VCC = 80 V
IC/IB = 10
TJ = 25°C
td (NPN, PNP)tr (PNP)
Figure 10. Turn−On Times
10
IC, COLLECTOR CURRENT (AMP)
5.0
3.0
2.0
1.0
0.5
Figure 11. Turn−Off Times
0.2
0.1
VCC = 80 V
IC/IB = 10, IB1 = IB2
ts (NPN) TJ = 25°C
0.1
1.0
0.5
0.2
0.03
0.01
0.1
0.05
0.02
t,TIME( s)μ
t,TIME( s)μ
100.2 1.0 5.02.00.5 100.1 0.2 0.3 5.02.00.5
tr (NPN)
tf (NPN)
tf (PNP)
ts (PNP)
ORDERING INFORMATION
Device Package Shipping
MJE15028G TO−220
(Pb−Free)
50 Units / Rail
MJE15029G TO−220
(Pb−Free)
50 Units / Rail
MJE15030G TO−220
(Pb−Free)
50 Units / Rail
MJE15031G TO−220
(Pb−Free)
50 Units / Rail

6. MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP)
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6
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.570 0.620 14.48 15.75
B 0.380 0.415 9.66 10.53
C 0.160 0.190 4.07 4.83
D 0.025 0.038 0.64 0.96
F 0.142 0.161 3.61 4.09
G 0.095 0.105 2.42 2.66
H 0.110 0.161 2.80 4.10
J 0.014 0.024 0.36 0.61
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 --- 1.15 ---
Z --- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
1 2 3
4
D
SEATING
PLANE−T−
C
ST
U
R
J
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PUBLICATION ORDERING INFORMATION
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
MJE15028/D
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Authorized Distributor
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MJE15028 MJE15028G MJE15029 MJE15029G MJE15030 MJE15030G MJE15031 MJE15031G