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By Anurodh 1
Light Emitting Diode
• A p-n junction diode which emits
spontaneous emission of radiation in the
visible and IR regions when forward biased
is called Light Emitting Diode.
• This converts the input electrical energy
into optical energy in the visible or IR
spectrum depending on the semiconductor
material
By Anurodh 2
Light Emitting Diode
Working Principle:
The energy conversion takes place in two stages
1.The energy of carriers in the semiconductors is
raised above the equilibrium value by electrical
input energy
2.Most of these carriers after having lived a mean
life time in the higher energy state, give up their
energy as spontaneous emission of photons with
energy equal to bandgap Eg of the semiconductor.
By Anurodh 3
Choice of Materials
• The choice of semiconductor material
depends upon the required wavelength of
material in terms of their bandgap energy.
• Lower bandgap materials are required for IR
applications and energy band gaps greater
than or equal to about 2eV materials are
needed for a light in the visible part.
• The most important IV-V compounds are
binary compounds GaAs(bandgap= 1.43eV,
emission near IR region), GaP
(bandgap=2.26eV, red & green emission)
By Anurodh 4
Structure of a planner LED showing
the emission of light from all surfaces
By Anurodh 5
Advantage of LED
• Simpler fabrication: There are no mirror facts
• Cost: The simpler construction of the LED leads to a
much reduced cost.
• Reliability: LED does not exhibit catastrophic
degradation and has proved far less sensitive to gradual
degradation than the injection laser.
• Less temperature dependence: The light output against
current is less affected by temperature than the
corresponding characteristic for the injection laser.
• Simpler drive circuitary: Temperature compensation
circuits are unnecessary as it can be operated in lower
drive currents and have reduced temperature
dependence.
• Linearity: As ideally the LED has a linear light output
against current characteristic unlike the injection laser
and advantageous where analog modulation is
considered.
By Anurodh 6
Differences between LED and Diode laser
• The output from the laser LED is incoherent,
whereas that from a diode laser is coherent.
• The light from an LED has a broad spectral width
and beam divergence and therefore information
carrying capacity of a system is much less.
• The light from a diode laser has both spatial and
temporal coherence and so is highly
monochromatic
• Diode laser is highly directional
• Coupling the LED to the fiber is more difficult
and the amount of power it can launch into the
fiber is relatively small.
• LED is less expensive compared to laser diodes.
By Anurodh 7
Light Emitting Diode (LED)
• The injected electrons and holes appear in
high concentrations in this transition region.
• At low forward current level, the electron-
hole recombinations cause spontaneous
emission of photons and the junction acts as
an LED. The band width of the emitted
light will be larger.
• As the current is increased, the intensity of
light increases linearly.
By Anurodh 8
Typical optical power output vs. forward current
for a LED and a laser diode.
Current
0
Light power
Laser diode
LED
100 mA50 mA
5 mW
10 mW
© 1999 S.O. Kasap, Optoelectronics (Prentice Hall)
By Anurodh 9
Optical Detectors
• This is the most essential component of an
optical fiber communication system.
• Crucial in dictating the overall system
performance
• Converts optical signal, received from the
fiber, into electrical signal.
By Anurodh 10
Basic requirements of a photodetector
• Sensitivity at the required wavelength
• Efficient conversion of photons to electrons
• Fast response to operate at high frequencies
• Low noise for reduced errors
• Sufficient area for efficient coupling to
optical fiber
• High reliability capable of continuous stable
operation at room temperature
• Low cost
By Anurodh 11
PIN Photodiode
• The most common semiconductor
photodetector is the PIN photodiode
• Consists of p and n regions separated by a
very lightly n-doped intrinsic (i) region.
• Operated at sufficiently large reverse bias
voltage
• Under illumination the current varies almost
linearly with the incident light
By Anurodh 12
The pin Photodiode
 pin energy-band diagram
 pin photodiode circuit
By Anurodh 13
Construction
Cross-section view of a front-
illuminated sillicon p-i-n
photodiode.
•n-type material is doped so
lightly that it can be
considered intrinsic
•To make a low resistance
contact a highly doped n-
type (n+
) layer is added
•Front illuminated PIN
photodiode operates in the
0.8 to 0.9μm band
•To increase detection
efficiency antireflection
coatings are provided on the
front surfaces.
By Anurodh 14
Working
• In normal condition, the depletion region is formed by
immobile positively charged donor atoms in the n-type
semiconductor and immobile negatively charged acceptor
atoms in the p-type material.
• A large reverse bias voltage is applied across the device so
that the intrinsic region is fully depleted of charge carriers.
• When an incident photon has an energy greater than or
equal to bandgap energy of the semiconductor material, the
photon can give up its energy and excite an electron from
the valence band to the conduction band.
• This process generates free electron-hole pairs which are
known as photo carriers since they are photon generated
charge carriers.
By Anurodh 15
Working (contd…)
• The photodetector is normally designed so that these carriers are
generated mainly in the depletion region (the depleted intrinsic
region) where most of the incident light is absorbed.
• The high electric field present in the depletion region causes the
carriers to separate and be collected across the reverse biased
junction and gives rise to current flow in the external circuit.
This current flow is known as the photocurrent.
• On the average the charge carrriers move a distance Ln or
Lp for electrons and holes respectively. This distance is
known as diffusion length.
• The time it takes for an electron or hole to recombine is
known as carrier lifetime and is represented by Tn and Tp
respectively.
By Anurodh 16
PIN photodiode showing the combined
absorption and depletion region
By Anurodh 17
Working (contd…)
• A particular semiconductor material
canonly be used over a limited wavelength
range.
By Anurodh 18
Photodetectors
• Note: the absorption of photons occurs over a distance that
is dependant on wavelength. Remembering that the
distribution of the field is not uniform tells us that
determining the time dependence of the photocurrent
signal is difficult.
• The resultant photocurrent is a result of electron flow only
not hole migration.
• Integrating the hole current to calculate the Q charge will
show that the total photogenerated electrons is
(electrons) and not (electrons and holes).
eN
eN2

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Led pin diode

  • 1. By Anurodh 1 Light Emitting Diode • A p-n junction diode which emits spontaneous emission of radiation in the visible and IR regions when forward biased is called Light Emitting Diode. • This converts the input electrical energy into optical energy in the visible or IR spectrum depending on the semiconductor material
  • 2. By Anurodh 2 Light Emitting Diode Working Principle: The energy conversion takes place in two stages 1.The energy of carriers in the semiconductors is raised above the equilibrium value by electrical input energy 2.Most of these carriers after having lived a mean life time in the higher energy state, give up their energy as spontaneous emission of photons with energy equal to bandgap Eg of the semiconductor.
  • 3. By Anurodh 3 Choice of Materials • The choice of semiconductor material depends upon the required wavelength of material in terms of their bandgap energy. • Lower bandgap materials are required for IR applications and energy band gaps greater than or equal to about 2eV materials are needed for a light in the visible part. • The most important IV-V compounds are binary compounds GaAs(bandgap= 1.43eV, emission near IR region), GaP (bandgap=2.26eV, red & green emission)
  • 4. By Anurodh 4 Structure of a planner LED showing the emission of light from all surfaces
  • 5. By Anurodh 5 Advantage of LED • Simpler fabrication: There are no mirror facts • Cost: The simpler construction of the LED leads to a much reduced cost. • Reliability: LED does not exhibit catastrophic degradation and has proved far less sensitive to gradual degradation than the injection laser. • Less temperature dependence: The light output against current is less affected by temperature than the corresponding characteristic for the injection laser. • Simpler drive circuitary: Temperature compensation circuits are unnecessary as it can be operated in lower drive currents and have reduced temperature dependence. • Linearity: As ideally the LED has a linear light output against current characteristic unlike the injection laser and advantageous where analog modulation is considered.
  • 6. By Anurodh 6 Differences between LED and Diode laser • The output from the laser LED is incoherent, whereas that from a diode laser is coherent. • The light from an LED has a broad spectral width and beam divergence and therefore information carrying capacity of a system is much less. • The light from a diode laser has both spatial and temporal coherence and so is highly monochromatic • Diode laser is highly directional • Coupling the LED to the fiber is more difficult and the amount of power it can launch into the fiber is relatively small. • LED is less expensive compared to laser diodes.
  • 7. By Anurodh 7 Light Emitting Diode (LED) • The injected electrons and holes appear in high concentrations in this transition region. • At low forward current level, the electron- hole recombinations cause spontaneous emission of photons and the junction acts as an LED. The band width of the emitted light will be larger. • As the current is increased, the intensity of light increases linearly.
  • 8. By Anurodh 8 Typical optical power output vs. forward current for a LED and a laser diode. Current 0 Light power Laser diode LED 100 mA50 mA 5 mW 10 mW © 1999 S.O. Kasap, Optoelectronics (Prentice Hall)
  • 9. By Anurodh 9 Optical Detectors • This is the most essential component of an optical fiber communication system. • Crucial in dictating the overall system performance • Converts optical signal, received from the fiber, into electrical signal.
  • 10. By Anurodh 10 Basic requirements of a photodetector • Sensitivity at the required wavelength • Efficient conversion of photons to electrons • Fast response to operate at high frequencies • Low noise for reduced errors • Sufficient area for efficient coupling to optical fiber • High reliability capable of continuous stable operation at room temperature • Low cost
  • 11. By Anurodh 11 PIN Photodiode • The most common semiconductor photodetector is the PIN photodiode • Consists of p and n regions separated by a very lightly n-doped intrinsic (i) region. • Operated at sufficiently large reverse bias voltage • Under illumination the current varies almost linearly with the incident light
  • 12. By Anurodh 12 The pin Photodiode  pin energy-band diagram  pin photodiode circuit
  • 13. By Anurodh 13 Construction Cross-section view of a front- illuminated sillicon p-i-n photodiode. •n-type material is doped so lightly that it can be considered intrinsic •To make a low resistance contact a highly doped n- type (n+ ) layer is added •Front illuminated PIN photodiode operates in the 0.8 to 0.9μm band •To increase detection efficiency antireflection coatings are provided on the front surfaces.
  • 14. By Anurodh 14 Working • In normal condition, the depletion region is formed by immobile positively charged donor atoms in the n-type semiconductor and immobile negatively charged acceptor atoms in the p-type material. • A large reverse bias voltage is applied across the device so that the intrinsic region is fully depleted of charge carriers. • When an incident photon has an energy greater than or equal to bandgap energy of the semiconductor material, the photon can give up its energy and excite an electron from the valence band to the conduction band. • This process generates free electron-hole pairs which are known as photo carriers since they are photon generated charge carriers.
  • 15. By Anurodh 15 Working (contd…) • The photodetector is normally designed so that these carriers are generated mainly in the depletion region (the depleted intrinsic region) where most of the incident light is absorbed. • The high electric field present in the depletion region causes the carriers to separate and be collected across the reverse biased junction and gives rise to current flow in the external circuit. This current flow is known as the photocurrent. • On the average the charge carrriers move a distance Ln or Lp for electrons and holes respectively. This distance is known as diffusion length. • The time it takes for an electron or hole to recombine is known as carrier lifetime and is represented by Tn and Tp respectively.
  • 16. By Anurodh 16 PIN photodiode showing the combined absorption and depletion region
  • 17. By Anurodh 17 Working (contd…) • A particular semiconductor material canonly be used over a limited wavelength range.
  • 18. By Anurodh 18 Photodetectors • Note: the absorption of photons occurs over a distance that is dependant on wavelength. Remembering that the distribution of the field is not uniform tells us that determining the time dependence of the photocurrent signal is difficult. • The resultant photocurrent is a result of electron flow only not hole migration. • Integrating the hole current to calculate the Q charge will show that the total photogenerated electrons is (electrons) and not (electrons and holes). eN eN2