This document provides specifications for the L14F1 and L14F2 hermetic silicon photodarlingtons. It includes maximum ratings, electrical and optical characteristics, and test conditions. Key features are that they are hermetically sealed photodarlingtons packaged in a narrow angle TO-18 case. Graphs show characteristics such as light current vs voltage and temperature, spectral response, and angular response.

1. HERMETIC SILICON
PHOTODARLINGTON
L14F1
L14F2
PACKAGE DIMENSIONS
0.230 (5.84)
0.209 (5.31)
0.195 (4.95)
0.178 (4.52)
0.255 (6.47)
0.225 (5.71)
0.030 (0.76)
NOM
0.500 (12.7)
MIN
0.100 (2.54)
SCHEMATIC
0.050 (1.27)
(CONNECTED TO CASE)
COLLECTOR
3
2
1
3
0.038 (0.97)
0.046 (1.16)
0.036 (0.92)
Ø0.020 (0.51) 3X
BASE 2
45°
NOTES:
1
EMITTER
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
DESCRIPTION
The L14F1/L14F2 are silicon photodarlingtons mounted in a narrow angle, TO-18 package.
FEATURES
• Hermetically sealed package
• Narrow reception angle
 2001 Fairchild Semiconductor Corporation
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2. HERMETIC SILICON
PHOTODARLINGTON
L14F1
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)(3,4,5 and 6)
Soldering Temperature (Flow)(3,4 and 6)
Collector to Emitter Breakdown Voltage
Collector to Base Breakdown Voltage
Emitter to Base Breakdwon Voltage
Power Dissipation (TA = 25°C)(1)
Power Dissipation (TC = 25°C)(2)
L14F2
(TA = 25°C unless otherwise specified)
Symbol
TOPR
TSTG
TSOL-I
TSOL-F
VCEO
VCBO
VEBO
PD
PD
Rating
-65 to +125
-65 to +150
240 for 5 sec
260 for 10 sec
25
25
12
300
600
Unit
°C
°C
°C
°C
V
V
V
mW
mW
NOTE:
1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 6.00 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning agents.
5. Soldering iron tip 1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension.
7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm.
8. Figure 1 and figure 2 use light source of tungsten lamp at 2870°K color temperature. A GaAs source of 0.05 mW/cm2 is approximately
equivalent to a tungsten source, at 2870°K, of 0.2 mW/cm2.
ELECTRICAL / OPTICAL CHARACTERISTICS
PARAMETER
Collector-Emitter Breakdown
Emitter-Base Breakdown
Collector-Base Breakdown
Collector-Emitter Leakage
Reception Angle at 1/2 Sensitivity
On-State Collector Current L14F1
On-State Collector Current L14F2
Rise Time
Fall Time
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(TA =25°C) (All measurements made under pulse conditions)
TEST CONDITIONS
SYMBOL
MIN
IC = 10 mA, Ee = 0
IE = 100 µA, Ee = 0
IC = 100 µA, Ee = 0
VCE = 12 V, Ee = 0
BVCEO
BVEBO
BVCBO
ICEO
θ
IC(ON)
IC(ON)
tr
tf
25
12
25
—
Ee = .125 mW/cm2, VCE = 5 V(7)
Ee = .125 mW/cm2, VCE = 5 V(7)
IC = 10 mA, VCC = 5 V, RL =100 Ω
IC = 10 mA, VCC = 5 V, RL =100 Ω
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TYP
MAX
UNITS
—
—
—
100
V
V
V
nA
Degrees
mA
mA
µs
µs
±8
7.5
2.5
—
300
250
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3. HERMETIC SILICON
PHOTODARLINGTON
L14F1
Figure 2. Relative Light Current vs. Ambient Temperature
Figure 1. Light Current vs. Collector to Emitter Voltage
5.0 mW/cm2
IL / IL @25°C, RELATIVE LIGHT CURRENT
IL, NORMALIZED LIGHT CURRENT
100
2.0
1.0
10
.5
.2
1.0
.1
.05
NORMALIZED TO:
VCE = 5 V
Ee = .2 mW/cm2
0.1
0
5
10
15
20
25
30
10
8
6
4
2
1.0
.8
.6
.4
.2
.1
.08
.06
.04
VCE = 5 V
H = .2 mW/cm2
.02
.01
-50
35
-25
0
50
25
75
100
125
T, TEMPERATURE (°C)
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
Figure 3. Spectral Response
Figure 4. Angular Response
1.0
110
0.9
100
0.8
90
0.7
RELATIVE AMPLITUDE
RELATIVE SPECTRAL RESPONSE
L14F2
0.6
0.5
0.4
0.3
80
70
60
50
40
30
0.2
20
0.1
10
0
400
500
600
700
800
900
1000
1100
0
-90°
1200
-70°
-30°
-50°
λ, WAVE LENGTH (NANOMETERS)
10°
-10°
50°
30°
70°
90°
DEGREES
Figure 6. Light Current vs. Relative Switching Speed
100
VCC
OUTPUT
PULSE
INPUT
LED56
10%
LED
td
RL
OUTPUT
tf
tr
ts
IL, LIGHT CURRENT (mA)
90%
L14F
I
LOAD RESISTANCE
10 Ω
1.0 V
100 Ω
10
1000 Ω
1.0
INPUT PULSE
tOFF = ts + tf
tON = td + tr
NORMALIZED TO:
RL = 100 Ω
IL = 10 mA
VCC = 10 V
0.1
0.01
Figure 5. Test Circuit and Voltage Waveforms
0.1
1.0
10
100
RELATIVE SWITCHING SPEED
td + tr + ts + tf
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4. HERMETIC SILICON
PHOTODARLINGTON
L14F1
L14F2
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
DS300306
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2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
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