The BD136, BD138, and BD140 are PNP silicon transistors mounted in plastic packages. They are designed for audio applications using complementary circuits. The transistors have maximum voltage, current, and thermal ratings. Their electrical characteristics including gain, saturation voltage, and cut-off currents are provided. Mechanical dimensions and diagrams of the SOT-32 plastic package and internal transistor connections are also included.

1. BD136
BD138/BD140
PNP SILICON TRANSISTORS
s STMicroelectronics PREFERRED
SALESTYPES
s PNP TRANSISTOR
DESCRIPTION
The BD136, BD138 and BD140 are silicon
Epitaxial Planar PNP transistors mounted in
Jedec SOT-32 plastic package, designed for
audio amplifiers and drivers utilizing
complementary or quasi-complementary circuits.
The complementary NPN types are the BD135
BD137 and BD139.
®
INTERNAL SCHEMATIC DIAGRAM
November 2001
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
BD136 BD138 BD140
VCBO Collector-Base Voltage (IE = 0) -45 -60 -80 V
VCEO Collector-Emitter Voltage (IB = 0) -45 -60 -80 V
VEBO Emitter-Base Voltage (IC = 0) -5 V
IC Collector Current -1.5 A
ICM Collector Peak Current -3 A
IB Base Current -0.5 A
Ptot Total Dissipation at Tc ≤ 25 o
C 12.5 W
Ptot Total Dissipation at Tamb ≤ 25
o
C 1.25 W
Tstg Storage Temperature -65 to 150
o
C
Tj Max. Operating Junction Temperature 150 o
C
3
2
1
SOT-32
Type Marking
BD136 BD136
BD136-10 BD136-10
BD136-16 BD136-16
BD138 BD138
BD140 BD140
BD140-10 BD140-10
BD140-16 BD140-16
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2. THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 10 o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 o
C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off
Current (IE = 0)
VCB = -30 V
VCB = -30 V TC = 125 o
C
-0.1
-10
µA
µA
IEBO Emitter Cut-off Current
(IC = 0)
VEB = -5 V -10 µA
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = -30 mA
for BD136
for BD138
for BD140
-45
-60
-80
V
V
V
VCE(sat)∗ Collector-Emitter
Saturation Voltage
IC = -0.5 A IB = -0.05 A -0.5 V
VBE∗ Base-Emitter Voltage IC = -0.5 A VCE = -2 V -1 V
hFE∗ DC Current Gain IC = -5 mA VCE = -2 V
IC = -150 mA VCE = -2 V
IC = -0.5 A VCE = -2 V
25
40
25
250
hFE hFE Groups IC = -150 mA VCE = -2 V
for BD136/BD140 group-10
for BD136/BD140 group-16
63
100
160
250
* Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Areas
BD136 / BD138 / BD140
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3. DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 7.4 7.8 0.291 0.307
B 10.5 10.8 0.413 0.425
b 0.7 0.9 0.028 0.035
b1 0.40 0.65 0.015 0.025
C 2.4 2.7 0.094 0.106
c1 1.0 1.3 0.039 0.051
D 15.4 16.0 0.606 0.630
e 2.2 0.087
e3 4.4 0.173
F 3.8 0.150
G 3 3.2 0.118 0.126
H 2.54 0.100
H2 2.15 0.084
I 1.27 0.05
O 0.3 0.011
V 10o
10o
0016114/B
SOT-32 (TO-126) MECHANICAL DATA
1: Base
2: Collector
3: Emitter
BD136 / BD138 / BD140
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4. Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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BD136 / BD138 / BD140
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