This document provides specifications for the BC107, BC108, and BC109 general purpose small signal NPN bipolar transistors. It includes dimensions, maximum ratings, typical electrical characteristics, and thermal resistance for each transistor model in a TO-18 metal package. Key specifications listed are an ambient operating temperature range of -65 to +175°C, continuous collector current of 100mA, transition frequency above 150MHz, and thermal resistance of 500°C/W.

1. BC107
BC108
BC109
MECHANICAL DATA
Dimensions in mm (inches)
GENERAL PURPOSE
SMALL SIGNAL
NPN BIPOLAR TRANSISTOR
5.84 (0.230)
5.31 (0.209)
12.7 (0.500)
min.
5.33 (0.210)
4.32 (0.170)
4.95 (0.195)
4.52 (0.178)
0.48 (0.019)
0.41 (0.016)
dia.
FEATURES
• SILICON NPN
• HERMETICALLY SEALED TO18
2.54 (0.100)
Nom.
• SCREENING OPTIONS AVAILABLE
3
1
2
TO–18 METAL PACKAGE
Underside View
PIN 1 – Emitter
PIN 2 – Base
PIN 3 – Collector
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
BC017
50V
BC108, BC109
VCEO
Collector – Base Continuous Voltage
30V
Collector – Emitter Continuous Voltage With Zero Base Current BC107
45V
BC108, BC109
VCES
20V
Collector – Emitter Continuous Voltage With Base Shortcircuited to Emitter
BC107
BC108, BC109
Emitter – Base Continuous Voltage Reverse Voltage
30V
BC107
6V
BC108, BC109
VEBO
50V
5V
IC
Continuous Collector Current
100mA
ICM
Peak Collector Current
200mA
Ptot
Power Dissipation @ Tamb = 25°C
300mW
Tamb
Ambient Operating Temperature Range
-65 to +175°C
Tstg
Storage Temperature Range
-65 to +175°C
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2. BC107
BC108
BC109
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Typ.
Max. Unit
VCB = 45V
BC107
15
VCB = 25V
BC108, BC109
15
Collector-Emitter Leakage Current
VCB = 45V
BC107
4
@Tamb =125°C
VCB = 25V
BC108, BC109
4
Emitter Cut-off Current
VEB = 4V
IC = 0
1
VCE = 5V
IC = 2mA
Group A
BC107, BC108
110
220
Group B
All Types
180
460
Group C
BC108, BC109
380
800
BC107
110
460
BC108
110
800
BC109
180
800
ICBO(1)
Collector-Base Leakage Current
ICBO(1)
IEBO
h21E
Static Forward Current Transfer Ratio
nA
µA
µA
VBE
Base – Emitter Breakdown
VCE = 5V
IC = 2mA
0.7
V
VBE(sat)(1)
Base – Emitter Saturation Voltage
IB = 0.5mA
IC = 10mA
0.83
V
VCE(sat)(1)
Collector – Emitter Saturation Voltage
IB = 0.5mA
IC = 10mA
0.25
V
fT
Transition Frequency
VCE = 5V
IC = 10mA
f = 100MHz
VCE = 5V
F
Noise Factor
MHz
150
IC = 0.2mA
R = 2kΩ f =1kHz ∆F=200Hz
BC109
4
BC107, BC108
dB
10
VCE = 5V IC = 2mA f =100kHz
BC107, BC108
125
260
Small Signal Forward Current Transfer Group B
All Types
240
500
Ratio
BC108, BC109
450
900
BC107
125
500
BC108
125
900
BC109
240
900
Group A
h21e
Group C
VCE = 5V IC = 2mA f = 1kHz
Common Emitter Input Impedance
Group A
BC107, BC108
1.6
4.5
Group B
All Types
3.2
8.5
Group C
h11e
BC108, BC109
6.0
15
kΩ
VCE = 5V IC = 2mA f = 1kHz
Group A
Common Emitter Output Admittance
C22b
Common Base Output Capacitance
Rth(j-amb)
30
Group B
All Types
60
Group C
h22e
BC107, BC108
BC108, BC109
110
VCB = 10V
f = 1MHz
Thermal Resistance: Junction to
Ambient
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µS
6
pF
500
°C/W
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