This document provides specifications for the TPC8107 P-channel MOSFET transistor made by Toshiba. Key details include: - It is suitable for applications such as notebook PCs, portable equipment, and lithium ion battery applications. - It has a small footprint due to a small, thin package and low drain-source on resistance of 5.5 mOhms typical. - Maximum ratings include a drain-source voltage of -30V, drain current of -13A DC and -52A pulse, and channel temperature of 150°C.

1. TPC8107
2003-02-201
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
TPC8107
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
· Small footprint due to small and thin package
· Low drain-source ON resistance: RDS (ON) = 5.5 mΩ (typ.)
· High forward transfer admittance: |Yfs| = 31 S (typ.)
· Low leakage current: IDSS = −10 µA (max) (VDS = −30 V)
· Enhancement-mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS -30 V
Drain-gate voltage (RGS = 20 kW) VDGR -30 V
Gate-source voltage VGSS ±20 V
DC (Note 1) ID -13
Drain current
Pulse (Note 1) IDP -52
A
Drain power dissipation (t = 10 s)
(Note 2a)
PD 1.9 W
Drain power dissipation (t = 10 s)
(Note 2b)
PD 1.0 W
Single pulse avalanche energy
(Note 3)
EAS 219 mJ
Avalanche current IAR -13 A
Repetitive avalanche energy
(Note 2a) (Note 4)
EAR 0.19 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg -55 to 150 °C
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-6J1B
Weight: 0.080 g (typ.)
Circuit Configuration
8 6
1 2 3
7 5
4

2. TPC8107
2003-02-202
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to ambient
(t = 10 s) (Note 2a)
Rth (ch-a) 65.8 °C/W
Thermal resistance, channel to ambient
(t = 10 s) (Note 2b)
Rth (ch-a) 125 °C/W
Marking (Note 5)
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)
Note 3: VDD = -24 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 W, IAR = -13 A
Note 4: Repetitive rating; pulse width limited by maximum channel temperature
Note 5: · on lower left of the marking indicates Pin 1.
※
TYPETPC8107
(a)
FR-4
25.4 ´ 25.4 ´ 0.8
(unit: mm)
(b)
FR-4
25.4 ´ 25.4 ´ 0.8
(unit: mm)
Lot No.
※ Weekly code: (Three digits)
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
Year of manufacture
(One low-order digits of calendar year)

3. TPC8107
2003-02-203
Electrical Characteristics (Ta ==== 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ¾ ¾ ±10 mA
Drain cut-OFF current IDSS VDS = -30 V, VGS = 0 V ¾ ¾ -10 mA
V (BR) DSS ID = -10 mA, VGS = 0 V -30 ¾ ¾
Drain-source breakdown voltage
V (BR) DSX ID = -10 mA, VGS = 20 V -15 ¾ ¾
V
Gate threshold voltage Vth VDS = -10 V, ID = -1 mA -0.8 ¾ -2.0 V
VGS = -4 V, ID = -6.5 A ¾ 10 15
Drain-source ON resistance RDS (ON)
VGS = -10 V, ID = -6.5 A ¾ 5.5 7.0
mW
Forward transfer admittance |Yfs| VDS = -10 V, ID = -6.5 A 15.5 31 ¾ S
Input capacitance Ciss ¾ 5880 ¾
Reverse transfer capacitance Crss ¾ 1000 ¾
Output capacitance Coss
VDS = -10 V, VGS = 0 V, f = 1 MHz
¾ 1050 ¾
pF
Rise time tr ¾ 11 ¾
Turn-ON time ton ¾ 22 ¾
Fall time tf ¾ 110 ¾
Switching time
Turn-OFF time toff
Duty <= 1%, tw = 10 ms
¾ 395 ¾
ns
Total gate charge
(gate-source plus gate-drain)
Qg ¾ 130 ¾
Gate-source charge 1 Qgs1 ¾ 10 ¾
Gate-drain (“miller”) charge Qgd
VDD ~- -24 V, VGS = -10 V,
ID = -13 A
¾ 30 ¾
nC
Source-Drain Ratings and Characteristics (Ta ==== 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Drain reverse current Pulse (Note 1) IDRP ¾ ¾ ¾ -52 A
Forward voltage (diode) VDSF IDR = -13 A, VGS = 0 V ¾ ¾ 1.2 V
RL=2.3W
VDD ~- -15 V
-10 V
VGS
0 V
4.7W
ID = -6.5 A
VOUT

4. TPC8107
2003-02-204
ID – VDS ID – VDS
ID – VGS VDS – VGS
|Yfs| – ID RDS (ON) – ID
ForwardtransferadmittanceïYfsï(S)
Drain-sourcevoltageVDS(V)
Drain-source voltage VDS (V)
DraincurrentID(A)
Drain-source voltage VDS (V)
DraincurrentID(A)
Gate-source voltage VGS (V)
DraincurrentID(A)
Gate-source voltage VGS (V)
Drain current ID (A) Drain current ID (A)
Drain-sourceONresistance
RDS(ON)(mW)
-2 -3 -4 -5
Common source
VDS = -10 V
Pulse test
0
-20
-30
-40
-50
-10
0 -1
100 Ta = -55°C
25
-8 -12 -16 -20
Common source
Ta = 25°C
Pulse test
0
-0.2
-0.3
-0.4
-0.5
-0.1
0 -4
ID = -13 A
-3
-6.5
0.3
-0.1 -0.3 -1 -3 -10 -30 -100
1
3
10
30
100
Common source
VDS = -10 V
Pulse test
Ta = -55°C
100
25
0.3
-0.1 -0.3 -1 -3 -10 -30 -100
1
3
10
30
100
Common source
Ta = 25°C
Pulse test
-10
VGS = -4 V
-2 -3 -4 -5
Common source
Ta = 25°C
Pulse test
-2.2
VGS = -2 V
0
-20
-30
-40
-50
-10
0 -1
-3
-6
-8
-10
-2.4
-2.6
-2.8
-4
0
-4
-8
-12
-16
-20
Common source
Ta = 25°C
Pulse test
VGS = -2 V
-2.2
-3
-4-10
-8
-6
-2.4
-2.6-2.8
-0.4 -0.6 -0.8 -1.00 -0.2

5. TPC8107
2003-02-205
RDS (ON) – Ta IDR – VDS
Capacitance – VDS Vth – Ta
PD – Ta Dynamic input/output characteristics
DrainpowerdissipationPD(W)
GatethresholdvoltageVth(V)
Ambient temperature Ta (°C)
Drain-sourceONresistance
RDS(ON)(mW)
Drain-source voltage VDS (V)
Drain-source voltage VDS (V)
CapacitanceC(pF)
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Drain-sourcevoltageVDS(V)
Gate-sourcevoltageVGS(V)
Total gate charge Qg (nC)
DrainreversecurrentIDR(A)
30
-0.1 -0.3 -1 -3 -10 -30 -100
100
300
1000
3000
10000
Crss
Coss
Ciss
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
-1.2
0
-80 -40 0 40 120 16080
-0.4
-0.8
-1.6
-2.0
Common source
VDS = -10 V
ID = -1 mA
Pulse test
80 120 160 200
0
0.8
1.2
1.6
2.0
0.4
0 40
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
t = 10 s
(1)
(2)
0
-10
-20
-30
0 40 80 120 160
Common source
ID = -13 A
Ta = 25°C
Pulse test
VDD = -24 V
VDS
VGS
-30
-20
0
-10
200
VDD = -24 V
-12
-12
-6
-6
0
-80 -40 0 40 120 16080
10
20
30
VGS = -4 V
-10
ID = -13 A, -6.5 A, -3 A
ID = -13 A, -6.5 A, -3 A
Common source
Pulse test
0
-0.1
-1
-10
-100
0.2 0.4 0.6 0.8 1.0 1.2
-10
Common source
Ta = 25°C
Pulse test
-5
-3
-1
VGS = 0 V

6. TPC8107
2003-02-206
Drain-source voltage VDS (V)
DraincurrentID(A)
Safe operating area
Pulse width tw (S)
rth - tw
Normalizedtransientthermalimpedance
rth(°C/W)
0.1
0.001 0.01 0.1 1 10 100 1000
1
10
100
1000
Single pulse
(2)
(1) Device mounted on a glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a glass-epoxy board (b)
(Note 2b)
t = 10 s (1)
-0.01
-1
-0.1
-10
-100
-0.01 -0.1 -1 -10 -100
* Single pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
ID max (pulse) *
10 ms*
1 ms*
VDSS max

7. TPC8107
2003-02-207
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE