This document describes a CMOS RF bandpass filter design using an active inductor with a compensated negative resistance circuit. It begins by introducing the need for integrated RF filters and issues with passive inductors. It then describes an active inductor topology based on the gyrator principle and a common drain-common gate negative resistance circuit to compensate losses. Simulation results show the filter achieves a center frequency tuning range of 1.9-6 GHz and quality factors above 60 when tuned. The compensated active inductor approach allows for an integrated tunable bandpass filter solution for multi-standard wireless applications.
A coupled-line balun for ultra-wideband single-balanced diode mixerTELKOMNIKA JOURNAL
A multi-section coupled-line balun design for an ultra-wideband diode mixer is presented in this paper. The multi-section coupled-line balun was used to interface with the diode mixer in which it can deliver a good impedance matching between the diode mixer and input/output ports. The mixer design operates with a Local Oscillator (LO) power level of 10 dBm, Radio Frequency (RF) power level of -20 dBm and Intermediate Frequency (IF) of 100 MHz with the balun characteristic of 180° phase shift over UWB frequency (3.1 to 10.6 GHz), the mixer design demonstrated a good conversion loss of -8 to -16 dB over the frequency range from 3.1 to 10.6 GHz. Therefore, the proposed multi-section coupled-line balun for application of UWB mixer showed a good isolation between the mixer’s ports.
In this paper, UWB technology operating in broad
frequency range of 3.1-10.6 GHz has shown great achievement
for high- speed wireless communications. to satisfy the UWB
system requirements, a band pass filter with a broad pass
band width, low insertion loss, and high stop-band suppression.
UWB band-pass filter (BPF) with wireless local area network
(WLAN) notch at 5.8 GHz and 3-dB fractional bandwidth of
108% using a microstrip structure is presented. Initially a
two transmission pole UWB band pass filter in the frequency
range 3.1-10.6 GHz is achieved by design a parallel-coupled
microstrip line with defective ground plane structure using
GML 1000 substrate with specification: dielectric constant 3.2
and thickness 0.762 mm at centre frequency 6.85 GHz. In this
structure a ë/4 open circuited stub is introduced to achieve the
notch at 5.8 GHz to avoid the interference with WLAN
frequency with lies the desired UWB band. The design
structure was simulated on electromagnetic circuit simulation
software and fabricated by microwave integrated circuit
technique. The measured VNA results show the close
agreement with simulated results.
Concurrent Quad-band Low Noise Amplifier (QB-LNA) using Multisection Impedanc...IJECEIAES
A quad-band low noise amplifier (QB-LNA) based on multisection impedance transformer designed and evaluated in this research. As a novelty, a multisection impedance transformer was used to produce QB-LNA. A multisection impedance transformer is used as input and output impedance matching because it has higher stability, large Q factor, and low noise than lumpedcomponent.The QB-LNA was designed on FR4 microstrip substrate with r= 4.4, thickness h=1.6 mm, and tan = 0.026. The proposed QB-LNA was designed and analyzed by Advanced Design System (ADS).The simulation has shown that QB-LNA achieves gain (S ) of 22.91 dB, 16.5 dB, 11.18 dB, and 7.25 dB at 0.92 GHz, 1.84 GHz, 2.61 GHz, and 3.54 GHz, respectively.The QB-LNA obtainreturn loss (S 11 21 ) of -21.28 dB, -31.87 dB, 28.08 dB, and -30.85 dB at 0.92 GHz, 1.84 GHz, 2.61 GHz, and 3.54 GHz, respectively. It also achieves a Noise figure (nf) of 2.35 dB, 2.13 dB, 2.56 dB, and 3.55 dB at 0.92 GHz, 1.84 GHz, 2.61 GHz, and 3.54 GHz, respectively. This research also has shown that the Figure of merit (FoM) of the proposed QB-LNA is higher than that of another multiband LNA.
A coupled-line balun for ultra-wideband single-balanced diode mixerTELKOMNIKA JOURNAL
A multi-section coupled-line balun design for an ultra-wideband diode mixer is presented in this paper. The multi-section coupled-line balun was used to interface with the diode mixer in which it can deliver a good impedance matching between the diode mixer and input/output ports. The mixer design operates with a Local Oscillator (LO) power level of 10 dBm, Radio Frequency (RF) power level of -20 dBm and Intermediate Frequency (IF) of 100 MHz with the balun characteristic of 180° phase shift over UWB frequency (3.1 to 10.6 GHz), the mixer design demonstrated a good conversion loss of -8 to -16 dB over the frequency range from 3.1 to 10.6 GHz. Therefore, the proposed multi-section coupled-line balun for application of UWB mixer showed a good isolation between the mixer’s ports.
In this paper, UWB technology operating in broad
frequency range of 3.1-10.6 GHz has shown great achievement
for high- speed wireless communications. to satisfy the UWB
system requirements, a band pass filter with a broad pass
band width, low insertion loss, and high stop-band suppression.
UWB band-pass filter (BPF) with wireless local area network
(WLAN) notch at 5.8 GHz and 3-dB fractional bandwidth of
108% using a microstrip structure is presented. Initially a
two transmission pole UWB band pass filter in the frequency
range 3.1-10.6 GHz is achieved by design a parallel-coupled
microstrip line with defective ground plane structure using
GML 1000 substrate with specification: dielectric constant 3.2
and thickness 0.762 mm at centre frequency 6.85 GHz. In this
structure a ë/4 open circuited stub is introduced to achieve the
notch at 5.8 GHz to avoid the interference with WLAN
frequency with lies the desired UWB band. The design
structure was simulated on electromagnetic circuit simulation
software and fabricated by microwave integrated circuit
technique. The measured VNA results show the close
agreement with simulated results.
Concurrent Quad-band Low Noise Amplifier (QB-LNA) using Multisection Impedanc...IJECEIAES
A quad-band low noise amplifier (QB-LNA) based on multisection impedance transformer designed and evaluated in this research. As a novelty, a multisection impedance transformer was used to produce QB-LNA. A multisection impedance transformer is used as input and output impedance matching because it has higher stability, large Q factor, and low noise than lumpedcomponent.The QB-LNA was designed on FR4 microstrip substrate with r= 4.4, thickness h=1.6 mm, and tan = 0.026. The proposed QB-LNA was designed and analyzed by Advanced Design System (ADS).The simulation has shown that QB-LNA achieves gain (S ) of 22.91 dB, 16.5 dB, 11.18 dB, and 7.25 dB at 0.92 GHz, 1.84 GHz, 2.61 GHz, and 3.54 GHz, respectively.The QB-LNA obtainreturn loss (S 11 21 ) of -21.28 dB, -31.87 dB, 28.08 dB, and -30.85 dB at 0.92 GHz, 1.84 GHz, 2.61 GHz, and 3.54 GHz, respectively. It also achieves a Noise figure (nf) of 2.35 dB, 2.13 dB, 2.56 dB, and 3.55 dB at 0.92 GHz, 1.84 GHz, 2.61 GHz, and 3.54 GHz, respectively. This research also has shown that the Figure of merit (FoM) of the proposed QB-LNA is higher than that of another multiband LNA.
A New CMOS Fully Differential Low Noise Amplifier for Wideband ApplicationsTELKOMNIKA JOURNAL
In this paper, a multi-stage fully differential low noise amplifier (LNA) has been presented for
wideband applications. A common-gate input stage is used to improve the input impedance matching and
linearity. A common-source stage is also used as the second stage to enhance gain and reduce noise. A
shunt-shunt feedback is employed to extend bandwidth and enhance linearity. The proposed low noise
amplifier has been designed and simulated using RF-TSMC 0.18 μm CMOS process technology. In
frequency band of 3.5-7.5 GHz, this amplifier has a flat power gain (S21) of 16.5 ± 1.5 dB, low noise figure
(NF) of 3dB, input (S11) and output (S22) return losses less than -10 dB and high linearity with input thirdorder
intercept point (IIP3) of -3dBm. It’s power consumption is also less than 10 mw with low power supply
voltage of 0.8v.
Coplanar waveguide low pass filter based on square complementary split ring r...TELKOMNIKA JOURNAL
In this paper, we present a novel coplanar waveguide low pass filter (LPF)structure based on the use of square complementary split ring resonators (CSRRs) in order to enhance the performances of a low pass filter. Especially, to enlarge the bandwidth of the LPF, the insertion losses and to increase the rejection of the LPF. The CSRRs are optimised and inserted periodically along the center conductor of the CPW line with a CPW ground integrating stubs permitting to enlarge the bandwidth. The simulation results of this filter show a -3 dB cut-off frequency equal to fc = 5.28 GHz. The designed filter has a good rejection in the stop band which below -20 dB and presents a good insertion loss in the bandwidth. The proposed filter has been fabricated and tested which give a good agreement between simulation and measurement results, the whole dimensions of the validated filter are 35.48x21.16 mm2. The originality of this work is the wide rejection band and the miniature dimensions.
An operational amplifier with recycling folded cascode topology and adaptive ...VLSICS Design
This paper presents a highly adaptive operational amplifier with high gain, high bandwidth, high speed
and low power consumption. By adopting the recycling folded cascode topology along with an adaptivebiasing
circuit, this design achieves high performance in terms of gain-bandwidth product (GBW) and slew
rate (SR). This single stage op-amp has been designed in 0.18μm technology with a power supply of 1.8V
and a 5pF load. The simulation results show that the amplifier achieved a GBW of 335.5MHz, Unity Gain
Bandwidth of 247.1MHz and a slew rate of 92.8V/μs.
A Low Power down Conversion CMOS Gilbert Mixer for Wireless CommunicationsIJERA Editor
In this paper a design of low power 2.4GHz (RF) down conversion Gilbert Cell mixer, implemented in 0.18μm
CMOS technology with 1.8V supply voltage is presented. The obtained result shows a conversion gain equal to
6.7dB and third order Input intercept point -1db, power consumption of 3.86mW at 1.8V supply voltage. The
50Ω matched impedance condition is applicable. Result shows a good potential of this CMOS mixer and justify
its use for low-power wireless communications.
Design of a CMOS-based microwave active channelized bandpass filterTELKOMNIKA JOURNAL
A two-branch microwave active bandpass filter is designed through the channelized filtering technique as well as the transversal concept. Both the main and the auxiliary branches, connected without power dividers/combiners, rely on C-coupled active third order Chebyshev bandpass filters. A lumped element signal delay circuit is also introduced in the main channel. Active inductors based on the gyrator-C topology, are involved in the Chebyshev filters’ structure. CMOS-based Operational Transconductor Amplifier (OTA) circuits are the building blocks of these inductors. The proposed active transversal channelized filter produces an elliptic narrow band response, centered at 1.13 GHz. Simulation results, obtained by means of the PSPICE code according to the 0.18 μm TSMC MOS technology, indicate excellent performances illustrating good impedance matching, low insertion losses and high selectivity. Finally, the noise analysis shows that the filter has a low noise figure in the bandwidth.
DESIGN AND ANALYSIS OF COMPACT UWB BAND PASS FILTERijeljournal
This paper presents design, implementation and analysis of an ultra-wideband (UWB) band-pass-filter using parallel-coupled microstrip line with defective ground plane and a uniform multi-mode resonator. The structure of the filter is designed on microwave substrate GML 1000 of dielectric constant 3.2 and height is 0.762 mm. Simulation is carried out by CST MSW software and optimized structure is fabricated. The frequency response is measured on vector analyzer and measured results show close approximation with simulation results. In this article modeling of the proposed filter is also reported. The electric model of the filter is analyzed by circuit theory and MATLAB. This model is validated by comparing the results with the CST simulation and VNA measured results. This filter is compact in size of dimension 30˟1.87 mm2 may be useful for modern wireless application of communication.
Design and analysis of compact uwb band pass filterijeljournal
This paper presents design, implementation and analysis of an ultra-wideband (UWB) band-pass-filter using parallel-coupled microstrip line with defective ground plane and a uniform multi mode resonator. The structure of the filter is designed on microwave substrate GML 1000 of dielectric constant 3.2 and
height is 0.762 mm. Simulation is carried out by CST MSW software and optimized structure is fabricated. The frequency response is measured on vector analyzer and measured results show close approximation with simulation results. In this article modeling of the proposed filter is also reported. The
electric model of the filter is analyzed by circuit theory and MATLAB. This model is validated by comparing the results with the CST simulation and VNA measured results. This filter is compact in size of dimension 30˟1.87 mm2 may be useful for modern wireless application of communication.
A 60 GHz CMOS Power Amplifier for Wireless CommunicationsIJECEIAES
This paper presents a 60 GHz power amplifier (PA) suitable for wireless communications. The two-stage wideband PA is fabricated in 55 nm CMOS. Measurement results show that the PA obtains a peak gain of 16 dB over a -3 dB bandwidth from 57 GHz to 67 GHz. It archives an output 1 dB compression point (OP1dB) of 4 dBm and a peak power added efficiency (PAE) of 12.6%. The PA consumes a total DC power of 38.3 mW from a 1.2 V supply voltage while its core occupies a chip area of 0.45 mm 2 .
Investigation of output power in ring CW fiber laser using graphene saturable...journalBEEI
This paper reported the effect of different coupling ratio in continuous wave fiber laser in a ring cavity configuration. Different coupling ratios of 10/90 and 50/50 were tested. Where the output power may vary depending on the ratio and it can be applied to specific area that requires either high or low output power. In addition, generation of passive Q-switched erbium doped fiber laser (EDFL) using graphene based saturable absorber in ring cavity using different coupling ratio was experimentally investigated. As a result, wavelength centered at 1566.62nm is obtain from EDFL cavity. Moreover, the cavity using coupler of 50/50 is capable to achieve Q-switched pulses as compared to the cavity using coupler of 10/90. Where the maximum output power recorded is 336mW with pulse repetition rate of 23.74 kHz. In addition, the pulse width is 3.84µs, and pulse energy is 14.15nJ.
A 300 GHz CMOS Transmitter Front-End for Ultrahigh-Speed Wireless CommunicationsIJECEIAES
This paper presents a 300 GHz transmitter front-end suitable for ultrahigh-speed wireless communications. The transmitter front-end realized in TSMC 40 nm CMOS consists of a common-source (CS) based doubler driven by a two-way D-band power amplifier (PA). Simulation results show that the two-way D-band PA obtains a peak gain of 21.6 dB over a -3 dB bandwidth from 132 GHz to 159 GHz. It exhibits a saturated power of 7.2 dBm and a power added efficiency (PAE) of 2.3%, all at 150 GHz. The CS based doubler results in an output power of 0.5 mW at 300 GHz. The transmitter front-end consumes a DC power of 205.8 mW from a 0.9 V supply voltage while it occupies an area of 2.1 mm 2 .
A New CMOS Fully Differential Low Noise Amplifier for Wideband ApplicationsTELKOMNIKA JOURNAL
In this paper, a multi-stage fully differential low noise amplifier (LNA) has been presented for
wideband applications. A common-gate input stage is used to improve the input impedance matching and
linearity. A common-source stage is also used as the second stage to enhance gain and reduce noise. A
shunt-shunt feedback is employed to extend bandwidth and enhance linearity. The proposed low noise
amplifier has been designed and simulated using RF-TSMC 0.18 μm CMOS process technology. In
frequency band of 3.5-7.5 GHz, this amplifier has a flat power gain (S21) of 16.5 ± 1.5 dB, low noise figure
(NF) of 3dB, input (S11) and output (S22) return losses less than -10 dB and high linearity with input thirdorder
intercept point (IIP3) of -3dBm. It’s power consumption is also less than 10 mw with low power supply
voltage of 0.8v.
Coplanar waveguide low pass filter based on square complementary split ring r...TELKOMNIKA JOURNAL
In this paper, we present a novel coplanar waveguide low pass filter (LPF)structure based on the use of square complementary split ring resonators (CSRRs) in order to enhance the performances of a low pass filter. Especially, to enlarge the bandwidth of the LPF, the insertion losses and to increase the rejection of the LPF. The CSRRs are optimised and inserted periodically along the center conductor of the CPW line with a CPW ground integrating stubs permitting to enlarge the bandwidth. The simulation results of this filter show a -3 dB cut-off frequency equal to fc = 5.28 GHz. The designed filter has a good rejection in the stop band which below -20 dB and presents a good insertion loss in the bandwidth. The proposed filter has been fabricated and tested which give a good agreement between simulation and measurement results, the whole dimensions of the validated filter are 35.48x21.16 mm2. The originality of this work is the wide rejection band and the miniature dimensions.
An operational amplifier with recycling folded cascode topology and adaptive ...VLSICS Design
This paper presents a highly adaptive operational amplifier with high gain, high bandwidth, high speed
and low power consumption. By adopting the recycling folded cascode topology along with an adaptivebiasing
circuit, this design achieves high performance in terms of gain-bandwidth product (GBW) and slew
rate (SR). This single stage op-amp has been designed in 0.18μm technology with a power supply of 1.8V
and a 5pF load. The simulation results show that the amplifier achieved a GBW of 335.5MHz, Unity Gain
Bandwidth of 247.1MHz and a slew rate of 92.8V/μs.
A Low Power down Conversion CMOS Gilbert Mixer for Wireless CommunicationsIJERA Editor
In this paper a design of low power 2.4GHz (RF) down conversion Gilbert Cell mixer, implemented in 0.18μm
CMOS technology with 1.8V supply voltage is presented. The obtained result shows a conversion gain equal to
6.7dB and third order Input intercept point -1db, power consumption of 3.86mW at 1.8V supply voltage. The
50Ω matched impedance condition is applicable. Result shows a good potential of this CMOS mixer and justify
its use for low-power wireless communications.
Design of a CMOS-based microwave active channelized bandpass filterTELKOMNIKA JOURNAL
A two-branch microwave active bandpass filter is designed through the channelized filtering technique as well as the transversal concept. Both the main and the auxiliary branches, connected without power dividers/combiners, rely on C-coupled active third order Chebyshev bandpass filters. A lumped element signal delay circuit is also introduced in the main channel. Active inductors based on the gyrator-C topology, are involved in the Chebyshev filters’ structure. CMOS-based Operational Transconductor Amplifier (OTA) circuits are the building blocks of these inductors. The proposed active transversal channelized filter produces an elliptic narrow band response, centered at 1.13 GHz. Simulation results, obtained by means of the PSPICE code according to the 0.18 μm TSMC MOS technology, indicate excellent performances illustrating good impedance matching, low insertion losses and high selectivity. Finally, the noise analysis shows that the filter has a low noise figure in the bandwidth.
DESIGN AND ANALYSIS OF COMPACT UWB BAND PASS FILTERijeljournal
This paper presents design, implementation and analysis of an ultra-wideband (UWB) band-pass-filter using parallel-coupled microstrip line with defective ground plane and a uniform multi-mode resonator. The structure of the filter is designed on microwave substrate GML 1000 of dielectric constant 3.2 and height is 0.762 mm. Simulation is carried out by CST MSW software and optimized structure is fabricated. The frequency response is measured on vector analyzer and measured results show close approximation with simulation results. In this article modeling of the proposed filter is also reported. The electric model of the filter is analyzed by circuit theory and MATLAB. This model is validated by comparing the results with the CST simulation and VNA measured results. This filter is compact in size of dimension 30˟1.87 mm2 may be useful for modern wireless application of communication.
Design and analysis of compact uwb band pass filterijeljournal
This paper presents design, implementation and analysis of an ultra-wideband (UWB) band-pass-filter using parallel-coupled microstrip line with defective ground plane and a uniform multi mode resonator. The structure of the filter is designed on microwave substrate GML 1000 of dielectric constant 3.2 and
height is 0.762 mm. Simulation is carried out by CST MSW software and optimized structure is fabricated. The frequency response is measured on vector analyzer and measured results show close approximation with simulation results. In this article modeling of the proposed filter is also reported. The
electric model of the filter is analyzed by circuit theory and MATLAB. This model is validated by comparing the results with the CST simulation and VNA measured results. This filter is compact in size of dimension 30˟1.87 mm2 may be useful for modern wireless application of communication.
A 60 GHz CMOS Power Amplifier for Wireless CommunicationsIJECEIAES
This paper presents a 60 GHz power amplifier (PA) suitable for wireless communications. The two-stage wideband PA is fabricated in 55 nm CMOS. Measurement results show that the PA obtains a peak gain of 16 dB over a -3 dB bandwidth from 57 GHz to 67 GHz. It archives an output 1 dB compression point (OP1dB) of 4 dBm and a peak power added efficiency (PAE) of 12.6%. The PA consumes a total DC power of 38.3 mW from a 1.2 V supply voltage while its core occupies a chip area of 0.45 mm 2 .
Investigation of output power in ring CW fiber laser using graphene saturable...journalBEEI
This paper reported the effect of different coupling ratio in continuous wave fiber laser in a ring cavity configuration. Different coupling ratios of 10/90 and 50/50 were tested. Where the output power may vary depending on the ratio and it can be applied to specific area that requires either high or low output power. In addition, generation of passive Q-switched erbium doped fiber laser (EDFL) using graphene based saturable absorber in ring cavity using different coupling ratio was experimentally investigated. As a result, wavelength centered at 1566.62nm is obtain from EDFL cavity. Moreover, the cavity using coupler of 50/50 is capable to achieve Q-switched pulses as compared to the cavity using coupler of 10/90. Where the maximum output power recorded is 336mW with pulse repetition rate of 23.74 kHz. In addition, the pulse width is 3.84µs, and pulse energy is 14.15nJ.
A 300 GHz CMOS Transmitter Front-End for Ultrahigh-Speed Wireless CommunicationsIJECEIAES
This paper presents a 300 GHz transmitter front-end suitable for ultrahigh-speed wireless communications. The transmitter front-end realized in TSMC 40 nm CMOS consists of a common-source (CS) based doubler driven by a two-way D-band power amplifier (PA). Simulation results show that the two-way D-band PA obtains a peak gain of 21.6 dB over a -3 dB bandwidth from 132 GHz to 159 GHz. It exhibits a saturated power of 7.2 dBm and a power added efficiency (PAE) of 2.3%, all at 150 GHz. The CS based doubler results in an output power of 0.5 mW at 300 GHz. The transmitter front-end consumes a DC power of 205.8 mW from a 0.9 V supply voltage while it occupies an area of 2.1 mm 2 .
DUAL PORT COGNITIVE RADIO ANTENNA USING TUNABLE BAND PASS FILTERjmicro
In this paper a dual port microstrip antenna with tunable band pass filter is proposed for cognitive radio applications. In single port reconfigurable antennas for cognitive radio, sensing and communication is done simultaneously. This can lead to failure of real time communication, also it may induce interference to primary user, dual antenna system solves this problem. The proposed antenna consist of one UWB microstrip antenna for sensing the holes in spectrum and other is communication antenna. Communication antenna is made tunable by using varacter diode in ‘G’ shaped DMS(defected microstrip structure) filter integrated in feedline.The sensing antenna is having UWB bandwidth from 3.4 GHz to 13.2 GHz and efficiency of more than 80%. The narrowband antenna has dual and triple operating frequencies which is tunable in the range of 4-5 GHz, 6-10 GHz and 10-11 GHz according to the biasing of varacterdiode. This antenna as efficiency more than 70%.
This paper relates the new topology and simulations of a fully differential CMOS active filter for mm wave band applications. The advantages of the differential topology over the single ended one are discussed and the quality factor is tuned to insure application requirements, including narrow bandwidth and high selectivity due to a differential negative resistance that reuses the filter’s current. Using this topology enables independent tuning of the quality factor and low power consumption while compensating the resistive loss of the filter. Very high filter performance was obtained with the simulated active inductor based active filter that was designed using CMOS 0.35 µm technology from AMS foundry and that resonates at 30 GHz with a high quality factor of Q > 500.
The third order LLCL filter is gaining more attractive in grid connected PV inverter in terms of material cost saving than LCL filter. Several active and passive damping techniques prevail in mitigating the resonance problem for maintaining the grid power quality standards. In this paper an improved passive damping is examined with reduction of power loss for the LLCL filter. Particularly, it reduces the switching ripple much better than LCL filter, with a decrease in volume of the inductance. The filter design is also developed for the operation of stiff grid. Mathematical operations and transfer function are derived with frequency response for the accuracy of the filter design. In addition, comparative analysis of passive and improved passive damping control is proposed. The control strategy is improved with feedback linearization in order to avoid the glitches in inverter control and is verified with prototype grid connected PV inverter.
Distortion Analysis of Differential AmplifierIOSR Journals
Abstract: The linearity of the CMOS is of major concern in the design of many analog circuits. In this paper the nonlinearity behavior of CMOS analog integrated circuits is investigated.The basic building block of analog integrated circuits such as differential amplifier with current mirror load have been chosen for harmonic distortion analysis.A mechanism to analyze the distortion of CMOS circuits in deep submicron technology that can be easily used to detect the distortion is built.The MOSFET model used for simulation is TSMC BSIM3 SPICE model from 0.13-μm CMOS process technology. HSPICE circuit simulator tool is used for distortion analysis of CMOS circuits. The MOS model used in this paper includes short-channel effects and gate-source capacitance, gate-drain capacitance, output resistance of MOS transistor. Analytical results are compared with simulation results and the influences of circuit parameters on circuit linearity are discussed.
Keywords: Analog Integrated Circuits, CMOSanalog integrated circuits, harmonic distortion, HSPICE, Short-channel effects, small signal analysis, transient analysis.
Non-radiative wireless energy transfer with single layer dual-band printed sp...journalBEEI
Accomplishing equilibrium in terms of transfer efficiency for dual-band wireless energy transfer (WET) system remains as one of key concerns particularly in the implementation of a single transmitter device which supports simultaneous energy and data transfer functionality. Three stages of design method are discussed in addressing the aforementioned concern. A single layer dual-band printed spiral resonator for non-radiative wireless energy transfer operating at 6.78 MHz and 13.56 MHz is presented. By employing multi-coil approach, measured power transfer efficiency for a symmetrical link separated at axial distance of 30 mm are 72.34% and 74.02% at the respective frequency bands. When operating distance is varied between 30 mm to 38 mm, consistency of simulated peak transfer efficiency above 50% is achievable.
A simple design and fabrication of polarization reconfigurable antenna for in...IJECEIAES
This paper proposes a simple microstrip patch antenna (MPA) that can reconfigure its polarization states from linear to circular polarization in real-time by means of a PIN diode. An antenna is fed by a 50 Ω coaxial cable through the substrate of Teflon with relative permittivity of 2.15. The proposed antenna possesses a simple patch with a one-sided corner truncated to achieve polarization reconfigurability. A PIN diode is loaded to connect the main patch with a truncated corner and further maintain dual polarization states such as linear polarization (LP) and circular polarization (CP). Advanced design system (ADS) was used as a simulator to simulate the antenna, and a good understanding was obtained between simulated and measured results. Measured results showed a good agreement with simulated results at all working frequencies of interest. It shows minimum reflection coefficient gain with -10 dB scattering bandwidth 100 MHz for LP states and 170 MHz for CP states. It also shows an axial ratio of 1.56 dB for CP, and the cross-polarization level is also in a satisfying range.
A LOW POWER, LOW PHASE NOISE CMOS LC OSCILLATORIJEEE
In this paper a Double Cross Coupled Inductor capacitor based Voltage Control Oscillator (LC-VCO) is designed. In the proposed circuit the phase noise, tuning range with respect to control voltage, output power and the power dissipation of the circuit is analysed. Phase noise of approximate -96 dBc/Hz at frequency of 1MHz, frequency tuning range of 4.8 to 8.3 GHz (corresponding to 53.0% tuning range) obtained by varying the control voltage from 0 to 2.0 V, Output power of circuit -8.92 dBm at 50 Ohm resistance terminal and the power consumption of Circuit is 3.8 mW. This VCO are designed for 5.5 GHz. The circuit is designed on the UMC 180nm CMOS technology and all the simulation results are obtained using cadence SPECTRE Simulator.
In this paper, a low pass filter based on T-Shaped resonator is presented. The T-Shaped resonator consists of meandered lines and rectangular patches. Also, the LC model and transfer function of the proposed resonator is presented. For suppression of spurious harmonics, a bandstop structure consists of hexangular patches and open stubs has been utilized. Finally, the wide stopband microstrip lowpass filter with cutoff frequency 2.72 GHz has been simulated, fabricated and measured. The LPF has good characteristics such as wide stopband and insertion loss lower than 0.18 dB in the passband region. The rejection level is less than -20 dB from 2.98 up to 21.3 GHz. The filter size is 10.5 mm×12.7 mm, or 0.131 λg× 0.158 λg, where λg is the guided wavelength. The measured and simulated results of the filter is in good agreement with each other, which show the merits of low insertion loss and wide stopband.
A miniature tunable quadrature shadow oscillator with orthogonal control IJECEIAES
This article presents a new design of a quadrature shadow oscillator. The oscillator is realized using one input and two outputs of a second-order filter cell together with external amplifiers in a feedback configuration. The oscillation characteristics are controlled via the external gain without disturbing the internal filter cell, following the concept of the shadow oscillator. The proposed circuit configuration is simple with a small component-count. It consists of, two voltage-different transconductance amplifiers (VDTAs) along with a couple of passive elements. The frequency of oscillation (FO) and the condition of oscillation (CO) are controlled orthogonally via the dc bias current and external gain. Moreover, with the addition of the external gain, the frequency range of oscillation can be further extended. The proposed work is verified by computer simulation with the use of 180 nm complementary metal–oxide–semiconductor (CMOS) model parameters. The simulation gives satisfactory results of two sinusoidal output signals in quadrature with some small total harmonic distortions (THD). In addition, a circuit experiment is performed using the commercial operational transconductance amplifiers LM13700 as the active components. The circuit experiment also demonstrates satisfactory outcome which confirms the validity of the proposed circuit.
Optimal Body Biasing Technique for CMOS Tapered Buffer IJEEE
This paper represents Fixed Body Biased CMOS Tapered Buffer which is designed to minimize the average power dissipation across large capacitive load. The implementation of Reverse Body Bias (RBB) in the proposed Buffer chain is to vary Vth value of NMOS in the first stage. And with the increase in Vth /sub-threshold leakage current and power has been reduced. The technology constraints on the threshold voltage does not allow designer to set high threshold voltage for MOS devices. Hence, this was found that in proposed circuit that when optimal Reverse Body Bias value is set within (0.2 VDD to 0.4 VDD) range, the average power dissipation across capacitive load reduces to 82.2 % at very less penalty in delay. Thus CMOS buffer designers can use the proposed method to vary Vth while keeping VDD constant, which could improve the performance parameters of Tapered Buffer. The proposed analysis is verified by simulating the 3-stage tapered buffer schematics using standard 180nm CMOS technology in Cadence environment.
A Low Phase Noise CMOS Quadrature Voltage Control Oscillator Using Clock Gate...IJERA Editor
This project presents the low phase noise cmos quadrature voltage control oscillator using clock gating technique. Here the colpitts vco is used to split the capacitance in the Qvco circuit producing quadrature output. The startup condition in the oscillator is improved by using 𝐺𝑚enhancement [12].This QVCO performs the operation anti phase injection locking fordevice reuse [8]. The new clock gating technique is used to reduce the power with thepower supply 1.5v. The QVCO uses a 0.5m𝐴with phase error of 0.4𝑜and exhibits a phase noise of -118dBc/HZ at 1MHZ offset at the centre frequency of 500MHZ.
A Low Phase Noise CMOS Quadrature Voltage Control Oscillator Using Clock Gate...IJERA Editor
This project presents the low phase noise cmos quadrature voltage control oscillator using clock gating technique. Here the colpitts vco is used to split the capacitance in the Qvco circuit producing quadrature output. The startup condition in the oscillator is improved by using 퐺푚enhancement [12].This QVCO performs the operation anti phase injection locking fordevice reuse [8]. The new clock gating technique is used to reduce the power with thepower supply 1.5v. The QVCO uses a 0.5m퐴with phase error of 0.4표and exhibits a phase noise of -118dBc/HZ at 1MHZ offset at the centre frequency of 500MHZ.
Index terms: current switching, clock gating, phase noise, Qvco
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After immersing yourself in the blue book and its red counterpart, attending DDD-focused conferences, and applying tactical patterns, you're left with a crucial question: How do I ensure my design is effective? Tactical patterns within Domain-Driven Design (DDD) serve as guiding principles for creating clear and manageable domain models. However, achieving success with these patterns requires additional guidance. Interestingly, we've observed that a set of constraints initially designed for training purposes remarkably aligns with effective pattern implementation, offering a more ‘mechanical’ approach. Let's explore together how Object Calisthenics can elevate the design of your tactical DDD patterns, offering concrete help for those venturing into DDD for the first time!
GraphRAG is All You need? LLM & Knowledge GraphGuy Korland
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LF Energy Webinar: Electrical Grid Modelling and Simulation Through PowSyBl -...DanBrown980551
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The framework is mostly written in Java, with a Python binding so that Python developers can access PowSyBl functionalities as well.
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- For beginners: discover PowSyBl's functionalities through a quick general presentation and the notebook, without needing any expert coding skills;
- For advanced developers: master the skills to efficiently apply PowSyBl functionalities to your real-world scenarios.
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GDG Cloud Southlake #33: Boule & Rebala: Effective AppSec in SDLC using Deplo...James Anderson
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UiPath Test Automation using UiPath Test Suite series, part 3DianaGray10
Welcome to UiPath Test Automation using UiPath Test Suite series part 3. In this session, we will cover desktop automation along with UI automation.
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Pradeep Chinnala, Senior Consultant Automation Developer @WonderBotz and UiPath MVP
Deepak Rai, Automation Practice Lead, Boundaryless Group and UiPath MVP
UiPath Test Automation using UiPath Test Suite series, part 3
H010235358
1. IOSR Journal of Electrical and Electronics Engineering (IOSR-JEEE)
e-ISSN: 2278-1676,p-ISSN: 2320-3331, Volume 10, Issue 2 Ver. III (Mar – Apr. 2015), PP 53-58
www.iosrjournals.org
DOI: 10.9790/1676-10235358 www.iosrjournals.org 53 | Page
CMOS RF Bandpass Filter Design using a Compensated Active
Inductor
1
W. El hamdani, M.El bekkali, 2
M.ALAMI, 3
F. Temcamani, B.Delacressonnière
1
Faculty of Science and Technology LTTI-Lab/ USMBA Fez, Morocco
2
CSE-Lab/ INPT Rabat, Morocco
3
ECS-Lab/ENSEA Cergy-Pontoise Cedex, France
Abstract: A novel tuning technique which improves the performances of an RF CMOS band-pass filter based
on simulated inductors is presented. Gain enhancement techniques are applied to reduce the inductor losses by
using a novel negative resistance topology. The proposed method is sufficiently general to be applied to other
active filters topologies based on active inductors as well and is intended to be used for CMOS multi-standard
filters design.
Keywords: MOS simulated inductors, active RF multi-standard filters, frequency and Q-factor tuning, negative
resistance.
I. Introduction
The growing market of wireless communications is a significant reason that motivates the study of new
low-cost and highly integrated architectures.
Radio frequency (RF) filters are essential components of any RF wireless transceiver and are used to
attenuate undesired out of band signals. RF filters typically use passive inductors; however, on-chip passive
inductors are notorious for their low quality factor and the large amount of chip area they consume [1], [2]. As a
result, RF filters are usually implemented off-chip, a process which adds extra cost and manufacturing time to the
design cycle. Indeed, spiral inductors are a critical issue in RF-design, their large on-chip area and weak quality
factor being the main constraints for highly integrated products.
Active inductors drastically reduce the required chip area while improving the quality factor and
potentially performance of the emulated inductor. Additionally, both the frequency and selectivity (bandwidth) of
the active filter can be tuned by simply changing the amount of current channeled by the transistors. This tunable
nature makes active filters especially suitable for multi-standard systems.
There are numerous topologies proposed and analyzed in literature for active inductors in CMOS
technology in a frequency range up to a few GHz [3-4]. A reference paper for simulated inductors is [3] where a
model for microwave applications is proposed.
This paper describes an architecture for a tunable active bandpass filter using the gyrator principle to
transform a capacitive impedance into an inductive one. Q-Enhancement is accomplished by using a negative
resistance coupled to active inductor. The technique presented here has a greater effect on the available tuning
range. The theory behind the filter and tuning enhancements will be described first, followed by simulation results
demonstrating the performance improvements.
II. Active inductor topology
Inductor is now becoming a highly attractive choice for CMOS wireless communication systems. Its
interesting and unique advantages over spiral inductors include the following factors:
Occupying smaller die area,
High quality factor,
Tunable inductance,
And the possibility of achieving higher inductance with high resonance frequency.
Applications of the active inductor include Wilkinson power divider [5], phase shifter [6], filter [7], [8],
oscillator [8], and current-mode phase-locked loop [9].
The concept of an active inductor is based on a well-known gyrator theory [10]. It is a two-port network
that can be realized by connecting two transconductors in negative feedback, Fig.1. Gm1 and Gm2 are the
transconductances of transconductors 1 and 2, respectively, and C is the load capacitance at node 1. The
transconductor in the forward path has a positive transconductance while the transconductor in the feedback path
has a negative transconductance.
The input admittance looking into port 2 of the gyrator-C network is given by:
2. CMOS RF Bandpass Filter Design using a Compensated Active Inductor
DOI: 10.9790/1676-10235358 www.iosrjournals.org 54 | Page
)
21
(
1
2
mgmg
C
s
V
inI
inY (1)
Equation (1) indicates that port 2 of the gyrator-C network acts as a single-ended lossless inductor with its
inductance given by:
21 mgmg
CL (2)
Hence, gyrator-C networks can be used to synthesize inductors. These synthesized inductors are called active
inductors. This active inductor is directly proportional to the load capacitance C and inversely proportional to
the product of the transconductances of the transconductors of the gyrator.
Figure 1: Schematics of active inductor using a gyrator topology
Several active inductors have been proposed in the literature. All structures aim at keeping the number of
transistors as small as possible due to their noise effect and parasitic resistances which degrade the quality factor
of the active inductor.
The inductor choosen in the filter structure contains two transistors and one current source, as shown in
Fig. 3. Its main advantage consists in the ease of frequency tuning possibility, allowing the possibility to work in
the GHz range.
The inductor presented in Fig. 3.a is obtained based on the gyrator theory, where the load capacitor is
represented by the parasitic capacitor Cgs2. Due to the presence of parasitic capacitor Cgs1, the circuit will have a
self–resonance frequency, determined by the effective value of the inductor and parasitic capacitor Cgs1. The
quality factor for this circuit is limited by the series resistance Rs, which is determined by the finite output
resistances of transistors, especially that of M1. An equivalent small signal circuit is shown in Fig. 3.b.
-a- -b-
Figure 2: a- Active inductor architecture used in this work
b- It’s equivalent resonator circuit
an approximate expression for input admittance Yin(s)=1/Zin(s) can be expressed as:
22
21
21)(
gssCdsg
mgmg
dsggssCsinY
(3)
Vin
Vin
Iin Iin
V2
V1
Gm1V2
Gm1V2
2 1
C
M1
M2
CpRp
Rs
L
Zin
3. CMOS RF Bandpass Filter Design using a Compensated Active Inductor
DOI: 10.9790/1676-10235358 www.iosrjournals.org 55 | Page
As expected, the input admittance shows that it is equivalent to an RLC network, as shown in Fig. 3.b.
The element values can be determined as follows.
21
2
mgmg
gsC
L (4)
21
1
mgmg
dsg
sR (5)
2
1
dsg
pR (6)
1gsCpC (7)
In most cases, due to the presence of the parasitic capacitor Cgs1, the active inductor is seen as a
bandpass filter with its resonant frequency.
Neglecting the transistor output resistance, the relations for the resonant frequency and quality factor are given
respectively by:
21
21
211
0 tt
gsCgsC
mgmg
pLC
(8)
2
1
21
12
/ t
t
gsCmg
gsCmg
pCL
pR
Q
(9)
Where ωt1 and ωt2 are the transit (unity-gain) frequencies of M1 and M2 respectively. Thus, for a high-
frequency active filter, both transistors need to be biased for a high unity-gain frequency. However, if M1 has a
high unity-gain frequency, (9) shows that this will also degrade the selectivity of the filter.
This problem can be circumvented by using a negative resistance circuit to compensate loss in
inductance and increase the Q of the filter.
In the following we discuss topologies of negative resistance.
III. The proposed negative resistance circuit
The negative resistance can be built by bipolar and FET devices. In the case of FET device, there are
two kinds of topology: the one using a passive feedback and one using an active feedback. In the case of passive
feedback, common-gate with inductance feedback and drain output as well as common source with capacitance
feedback and gate output are commonly used. Each method has its own working frequency and resistance value
[11].
In [12] the negative resistance circuit is using an active feedback. Among three topologies studied, a
Common Drain- Common Gate (CD-CG) structure has been proposed and represented in Fig. 3 as well, proving
to be a promising solution in compensating loss of CMOS active inductor.
Further details regarding this principle are presented in [12].
Figure 3: CD-CG negative resistance circuit
Yc
Ye
D
D
4. CMOS RF Bandpass Filter Design using a Compensated Active Inductor
DOI: 10.9790/1676-10235358 www.iosrjournals.org 56 | Page
Figure 4: Small signal equivalent circuit of the negative resistance
Figure 5: Simulated resistance and reactance of the negative resistance circuit.
IV. Design of bandpass filter using compensated active inductor
A. Circuit principe
The block diagram of the RF bandpass filter based on the active inductor is shown in Fig. 6. It’s
associated in parallel with a negative conductance and a variable capacitor (varactor). This allows the adjustment
of respectively the filter bandwidth and the center frequency. It is obvious that the order of the filter can’t allow
the same response as commercial SAW filters. However we have to combine several cells coupled to have higher
levels of responses [13].
The input buffer realized by Min, converts the input voltage Vin to a current that is applied to the active
inductor [14]. This is the most effective way to change the gain of the filter. For measurement requirement, an
output buffer composed of a common-drain transistor Mout and a current source IB is added [15]. The output
buffer is used to drive the resistive loads. Besides, it prevents the load resistors and capacitors from reducing the
resonant frequency and quality factor of the filter. The output buffer provides an adequate driving current and
matching output impedance to the load. The output buffer must also have a large bandwidth so that its impact on
the performance of the filter is minimum. Source-follower configurations are typically used in realization of the
output buffer due to their low and tunable output impedance and large bandwidth.
Figure 6: Block diagram of the Bandpass filter based on compensated active inductor
B. Simulation results
This work was simulated using AMS 0.35-μm process parameters with 2.3V power supply. All
transistors have the minimum channel length of 0.35-μm. Through a S-parameter simulation the transfer function
is shown in Fig. 7. The measured centre frequency f0 is 6.2 GHz without Cv. The measured Q is 124.4.
G2
ix
gds1
~
D2G2
D1
Vx
gm1Vgs1 Cgs2
gds2
gm2Vgs2Cgs1
G1
Vin
Vout
VDD
Min
Mout
Zin Cp Rp Lp
Active inductor
IB
Output bufferInput buffer
Rn
Cv
5. CMOS RF Bandpass Filter Design using a Compensated Active Inductor
DOI: 10.9790/1676-10235358 www.iosrjournals.org 57 | Page
The f0 tuning (using Cv) and Q tuning (using Rn) curves are shown in Figs. 8 and 9, respectively. The
performance of the filter is summarized in Table I.
Figure 7: Frequency response of the bandpass filter
Figure 8: Center frequency tuning of the bandpass filter in the range 2–5.7 GHz
Figure 9: Quality factor (Q) tuning of the bandpass filter by Rn.
Technology (μm) 0.35
Filter Order 2
ω0 Tuning Range (GHz) 1.9 ~ 6
Quality factor (Q) > 60
Table1: Characteistics Of The RF Bandpass Filter Based On Active Inductor
2 3 4 5 6 7 8 91 10
-10
0
10
20
30
40
-20
50
Frequency (GHz)
S(2,1)dB
S21(dB)
Frequency (GHz)
2 3 4 5 6 7 8 91 10
-20
-10
0
10
20
30
40
-30
50
Frequency (GHz)
S21(dB)
2 3 4 51 6
-11.667
-3.333
5.000
13.333
21.667
-20.000
30.000
Frequency (GHz)
S21(dB)
Q=64.7, f0=1.94
Q=12.8, f0=1.92
Q=6.2, f0=1.86
Q=4.6, f0=1.98
6. CMOS RF Bandpass Filter Design using a Compensated Active Inductor
DOI: 10.9790/1676-10235358 www.iosrjournals.org 58 | Page
V. Conclusions
In this paper a novel negative resistance network topology is shown to provide loss compensation on all-
transistor active inductor.
The second order bandpass filter based on this active inductor has been proposed. Q-enhancement is
accomplished by varying value of negative resistance coupled to the resonator. Tuning range of resonant
frequency is demonstrated by varying varactor Cv.
Acknowledgment
The authors would like to thank the Inter-University Joint Committee Franco-Moroccan for assistance to
this project through integrated action Volubilis. They also thank the Moroccan Ministry of Education and Higher
Education for its support through CSPT funding.
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