Solid State Electronics.
this slide is made from taking help of
TextBook
Ben.G.StreetmanandSanjayBanerjee:SolidStateElectronicDevices,Prentice-HallofIndiaPrivateLimited.
Solid State Electronics.
this slide is made from taking help of
TextBook
Ben.G.StreetmanandSanjayBanerjee:SolidStateElectronicDevices,Prentice-HallofIndiaPrivateLimited.
The attached narrated power point presentation mentions the different materials used for the construction of semiconductors. It offers structural and energy level explanation on the properties exhibited by the semiconductor materials. It also throws light on the structure and behaviour of a PN junction and use of PN junctions in active electronic components. The material will be useful for KTU first year students who prepare for the subject EST 130, Part B, Basic Electronics Engineering.
Fundamentals of learn how to Semiconductors can easily be mani pulated to become conducting or insulating materials and can change their conductive properties
The following presentation is a part of the level 4 module -- Electrical and Electronic Principles. This resources is a part of the 2009/2010 Engineering (foundation degree, BEng and HN) courses from University of Wales Newport (course codes H101, H691, H620, HH37 and 001H). This resource is a part of the core modules for the full time 1st year undergraduate programme.
The BEng & Foundation Degrees and HNC/D in Engineering are designed to meet the needs of employers by placing the emphasis on the theoretical, practical and vocational aspects of engineering within the workplace and beyond. Engineering is becoming more high profile, and therefore more in demand as a skill set, in today’s high-tech world. This course has been designed to provide you with knowledge, skills and practical experience encountered in everyday engineering environments.
The attached narrated power point presentation mentions the different materials used for the construction of semiconductors. It offers structural and energy level explanation on the properties exhibited by the semiconductor materials. It also throws light on the structure and behaviour of a PN junction and use of PN junctions in active electronic components. The material will be useful for KTU first year students who prepare for the subject EST 130, Part B, Basic Electronics Engineering.
Fundamentals of learn how to Semiconductors can easily be mani pulated to become conducting or insulating materials and can change their conductive properties
The following presentation is a part of the level 4 module -- Electrical and Electronic Principles. This resources is a part of the 2009/2010 Engineering (foundation degree, BEng and HN) courses from University of Wales Newport (course codes H101, H691, H620, HH37 and 001H). This resource is a part of the core modules for the full time 1st year undergraduate programme.
The BEng & Foundation Degrees and HNC/D in Engineering are designed to meet the needs of employers by placing the emphasis on the theoretical, practical and vocational aspects of engineering within the workplace and beyond. Engineering is becoming more high profile, and therefore more in demand as a skill set, in today’s high-tech world. This course has been designed to provide you with knowledge, skills and practical experience encountered in everyday engineering environments.
witter is a microblogging and social networking service owned by American company Twitter, Inc., on which users post and interact with messages known as "tweets". Registered users can post, like, and retweet tweets, while unregistered users only have a limited ability to read public tweets. Users interact with Twitter through browser or mobile frontend software, or programmatically via its APIs. Prior to April 2020, services were accessible via SMS.[9] Tweets were originally restricted to 140 characters, but the limit was doubled to 280 for non-CJK languages in November 2017.[10] Audio and video tweets remain limited to 140 seconds for most accounts.
Twitter was created by Jack Dorsey, Noah Glass, Biz Stone, and Evan Williams in March 2006 and launched in July of that year. Twitter, Inc. is based in San Francisco, California and has more than 25 offices around the world.[11] By 2012, more than 100 million users posted 340 million tweets a day,[12] and the service handled an average of 1.6 billion search queries per day.[13][14][15] In 2013, it was one of the ten most-visited websites and has been described as "the SMS of the Internet".[16] By the start of 2019, Twitter had more than 330 million monthly active users.[17] In practice, the vast majority of tweets are written by a minority of users.[18][19]
On April 25, 2022, the Twitter board of directors agreed to a $44 billion buyout by Elon Musk, the CEO of SpaceX and Tesla, potentially making it one of the biggest deals to turn a company private.[20][21] Musk said on July 8, 2022, that he was terminating the deal, claiming that the social media company had failed to provide information about fake accounts on the platform.[22] Twitter board chair Bret Taylor subsequently pledged to pursue legal action against Musk, launching a lawsuit against him in the Chancery Court of Delaware on July 12.[23] In early October, 2022, Musk reversed his position, again -- saying he would go ahead with the deal at the originally agreed $44 billion price.witter is a microblogging and social networking service owned by American company Twitter, Inc., on which users post and interact with messages known as "tweets". Registered users can post, like, and retweet tweets, while unregistered users only have a limited ability to read public tweets. Users interact with Twitter through browser or mobile frontend software, or programmatically via its APIs. Prior to April 2020, services were accessible via SMS.[9] Tweets were originally restricted to 140 characters, but the limit was doubled to 280 for non-CJK languages in November 2017.[10] Audio and video tweets remain limited to 140 seconds for most awitter is a microblogging and social networking service owned by American company Twitter, Inc., on which users post and interact with messages known as "tweets". Registered users can post, like, and retweet tweets, while unregistered users only have a lim
This slide give you idea about the atomic structure, classification of solids based on valance electron, free electron, energy band description, why the silicon is used as semiconductor substance compare to germanium, semiconductor and its types.
This presentation gives you idea about following topics
1.atomic structure
2.classification of solids based valance electron, free electron, energy band description
3.semiconductor and its type
2. 3-‐2
ELEC
3908,
Physical
Electronics:
Energy
Band
Diagrams
and
Doping
Lecture Outline
• Continue the study of semiconductor devices by looking at
the material used to make most devices
• The energy band diagram is a representation of carrier
energy in a semiconducting material and will be related to
an orbital bonding representation
• Devices require materials with tailored characteristics,
obtained through doping, the controlled introduction of
impurities
• Will discuss electrons and holes, as well as intrinsic, n-type
and p-type materials
• Later lectures will apply these concepts to diode, bipolar
junction transistor and FET
3. 3-‐3
ELEC
3908,
Physical
Electronics:
Energy
Band
Diagrams
and
Doping
Atomic Electron Energy Levels
• A free electron can assume any
energy level (continuous)
• Quantum mechanics predicts a
bound electron can only assume
discrete energy levels
• This is a result of the interaction
between the electron and the nuclear
proton(s)
4. 3-‐4
ELEC
3908,
Physical
Electronics:
Energy
Band
Diagrams
and
Doping
Crystal Energy Bands
• Crystal is composed of a large
number of atoms (≈1022 cm-3 for
silicon)
• Interaction between the electrons of
each atom and the protons of other
atoms
• Result is a perturbation of each
electron’s discrete energy level to
form continua at the previous energy
levels
5. 3-‐5
ELEC
3908,
Physical
Electronics:
Energy
Band
Diagrams
and
Doping
Covalent Bonding
• Silicon crystal formed by covalent
bonds
• Covalent bonds share electrons
between atoms in lattice so each
thinks its orbitals are full
• Most important bands are therefore
– band which would be filled at 0 K -
valence band
– next band above in energy -
conduction band
6. 3-‐6
ELEC
3908,
Physical
Electronics:
Energy
Band
Diagrams
and
Doping
Simplified Energy Band Diagram
• Movement within a band is not
difficult due to continuum of energy
levels
• Movement between bands requires
acquisition of difference in energy
between bands (in pure crystal, can’t
exist in between)
• Main features of interest for first
order device analysis are
– top of valence band (Ev)
– bottom of conduction band (Ec)
– difference in energy between Ec and Ev,
energy gap Eg
7. 3-‐7
ELEC
3908,
Physical
Electronics:
Energy
Band
Diagrams
and
Doping
Orbital Bonding Model
• Represent valence and conduction bands by separate silicon
lattice structures
• The two diagrams coexist in space -the same set of silicon
atoms is represented in each diagram
8. 3-‐8
ELEC
3908,
Physical
Electronics:
Energy
Band
Diagrams
and
Doping
Electron Transitions -Energy Band Diagram
• At room temperature, very
few electrons can gain energy
Eg to move to the conduction
band ( ≈ 1010 cm-3 at 300K =
23°C)
• In pure silicon at 300K, most
valence band orbitals ( ≈ 1022
cm-3 ) are full, most
conduction band orbitals are
empty
9. 3-‐9
ELEC
3908,
Physical
Electronics:
Energy
Band
Diagrams
and
Doping
Electron Transitions – Orbital Bonding
10. 3-‐10
ELEC
3908,
Physical
Electronics:
Energy
Band
Diagrams
and
Doping
Electrons and Holes
• Conduction of current occurs through electron movement
• Two mechanisms of electron movement are possible:
– movement within the nearly empty conduction band orbital
structure
– movement within the nearly full valence band orbital structure
• Conduction in the valence band structure is more conveniently
modeled as the “movement” of an empty orbital
• Model this empty valence band orbital as a positively charged
pseudo-particle called a hole
• Density of electrons in conduction band is n (cm-3)
• Density of holes in valence band is p (cm-3)
11. 3-‐11
ELEC
3908,
Physical
Electronics:
Energy
Band
Diagrams
and
Doping
Electron and Hole Conduction
• Electron movement in
conduction band can be
modeled directly
• Movement of electrons in
valence band modeled as
movement (in opposite
direction) of positively
charged hole
Electric Field
12. 3-‐12
ELEC
3908,
Physical
Electronics:
Energy
Band
Diagrams
and
Doping
Intrinsic Material
• Semiconducting material which has not had any impurities
added is called intrinsic
• In an intrinsic material, the number of electrons and holes must
be equal because they are generated in pairs
• Call the density of electrons and holes in intrinsic material the
intrinsic density ni (for Si@300K, ni ≈ 1.45x1010 cm-3)
• Therefore, for intrinsic material
13. 3-‐13
ELEC
3908,
Physical
Electronics:
Energy
Band
Diagrams
and
Doping
Extrinsic Material
• Intentional addition of impurities during manufacture or in
specialized fabrication steps is termed doping
• Doped material is called extrinsic
• Ability to change the electrical characteristics of the material
through selective introduction of impurities is the basic reason
why semiconductor devices are possible
• Later lectures will outline the processes used to introduce
impurities in a controlled and repeatable way
14. 3-‐14
ELEC
3908,
Physical
Electronics:
Energy
Band
Diagrams
and
Doping
Mass-Action Law
• For intrinsic material, n = p = ni, therefore
• This turns out to be a general relationship called the
mass-action law, which can be used for doped material
in equilibrium
15. 3-‐15
ELEC
3908,
Physical
Electronics:
Energy
Band
Diagrams
and
Doping
Group V Impurity Atom
• An atom from group V of the periodic table has one more
nuclear proton and valence electron than silicon
• If the atom replaces a silicon atom in the lattice, the extra
electron can move into the conduction band (ionization)
• A group V atom is a donor since it donates an electron to the
silicon lattice
• Density of donor dopant atoms given symbol ND (cm-3)
16. 3-‐16
ELEC
3908,
Physical
Electronics:
Energy
Band
Diagrams
and
Doping
Donor Ionization - Energy Band Diagram
17. 3-‐17
ELEC
3908,
Physical
Electronics:
Energy
Band
Diagrams
and
Doping
Donor Ionization – Orbital Bonding Model
18. 3-‐18
ELEC
3908,
Physical
Electronics:
Energy
Band
Diagrams
and
Doping
Donor Doping -Electron and Hole Densities
19. 3-‐19
ELEC
3908,
Physical
Electronics:
Energy
Band
Diagrams
and
Doping
Example 3.1: Arsenic Doping
20. 3-‐20
ELEC
3908,
Physical
Electronics:
Energy
Band
Diagrams
and
Doping
Example 3.1: Solution
21. 3-‐21
ELEC
3908,
Physical
Electronics:
Energy
Band
Diagrams
and
Doping
Group III Impurity Atom
• An atom from group III of the periodic table has one less nuclear
proton and valence electron than silicon
• If the atom replaces a silicon atom in the lattice, the empty
valence orbital can be filled by an electron (ionization)
• A group III atom is an acceptor since it accepts an electron from
the silicon lattice
• Density of acceptor dopant atoms given symbol NA (cm-3)
22. 3-‐22
ELEC
3908,
Physical
Electronics:
Energy
Band
Diagrams
and
Doping
Acceptor Ionization - Energy Band Diagram
23. 3-‐23
ELEC
3908,
Physical
Electronics:
Energy
Band
Diagrams
and
Doping
Acceptor Ionization – Orbital Bonding Model
24. 3-‐24
ELEC
3908,
Physical
Electronics:
Energy
Band
Diagrams
and
Doping
Acceptor Doping - Electron and Hole Densities
25. 3-‐25
ELEC
3908,
Physical
Electronics:
Energy
Band
Diagrams
and
Doping
Example 3.2: Gallium Doping
26. 3-‐26
ELEC
3908,
Physical
Electronics:
Energy
Band
Diagrams
and
Doping
Example 3.2: Solution
27. 3-‐27
ELEC
3908,
Physical
Electronics:
Energy
Band
Diagrams
and
Doping
Compensated Doping
28. 3-‐28
ELEC
3908,
Physical
Electronics:
Energy
Band
Diagrams
and
Doping
Example 3.3: Compensated Doping
29. 3-‐29
ELEC
3908,
Physical
Electronics:
Energy
Band
Diagrams
and
Doping
Example 3.3: Solution
30. 3-‐30
ELEC
3908,
Physical
Electronics:
Energy
Band
Diagrams
and
Doping
Lecture Summary
