This document provides an overview of power electronic devices. It begins with an outline of topics to be covered, including an introductory overview of power electronic devices, uncontrolled devices like power diodes, half-controlled devices like thyristors, fully-controlled devices, and drive circuits. It then discusses the concept and features of power electronic devices, how they are used in power electronic systems, and classifications like uncontrolled, half-controlled, and fully-controlled. The document focuses on specific devices, providing details on their structure, operation, characteristics and applications. It covers power diodes and thyristors in more depth.
This document provides an overview of power electronic devices. It begins with an introduction to power electronic devices and their features. It then discusses uncontrolled devices like power diodes and their characteristics. It covers half-controlled devices like thyristors and their operation. Fully-controlled devices like IGBTs, MOSFETs, and GTOs are described next along with their structures and characteristics. The document concludes with emerging devices like SITs, SITHs, MCTs, and IGCTs.
The document discusses a thermal management approach for fault-resilient design of three-level IGCT-based NPC converters. It analyzes the power device thermal stresses during overcurrent conditions when the firing mode protection is activated. Adding resilience impedances to the clamping diode branches helps restrict short circuit current through the internal IGCTs and limits their thermal stress, protecting the IGCTs even if the circuit breaker fails to operate properly during a fault. This allows damage to be confined to the freewheeling diodes instead of the more expensive IGCTs, reducing repair costs and downtime for the converter.
This document provides an overview of analog electronics topics including semiconductor diodes, bipolar transistors, single and multi-stage amplifiers, and field effect transistors. It specifically discusses diodes and how they can be used as rectifiers to convert AC to DC power. There are three main types of rectifiers: half-wave, full-wave, and bridge rectifiers. The document explains how each type of rectifier works and its peak inverse voltage rating in relation to the maximum voltage of the power source.
This document discusses using a TRIAC and optoisolator to control 220V AC loads from an Arduino board. It explains that a TRIAC can be used to control AC power by turning on and off at different points of the sine wave. An optoisolator like the MOC3041 provides isolation between the Arduino and power circuit to prevent damage. It describes how the optoisolator works, using a LED to trigger the TRIAC at zero crossings. Sample circuit diagrams show how to connect the TRIAC, optoisolator, and load. Calculations for snubber resistors and capacitors to prevent false triggering are also covered.
The document provides an overview of power electronic devices. It begins by defining power electronic devices as semiconductor devices used to convert or control electric power. It then discusses the key features of power electronic devices, including that they must handle large power levels and typically operate in switching states. The document outlines the basic configuration of a power electronic system and classifications of devices. It provides details on uncontrolled diodes, half-controlled thyristors, and fully-controlled devices. It also discusses characteristics, specifications, applications and history.
The document discusses various types of motor drives used in power electronics. It describes different power switches used in power electronic circuits like diodes, thyristors, TRIACs, IGBTs, and provides their characteristics. It also summarizes different methods of speed control for DC motors like armature voltage control, field flux control and armature resistance control. For AC induction motors, it discusses speed control methods like pole changing, stator voltage control, supply frequency control and rotor resistance control.
This document provides an introduction to the Power Electronics-I course. It discusses the following key points:
- Power electronics deals with efficient power conversion using different circuit topologies. The course will cover basic theory of power semiconductor devices, AC-DC, DC-DC, and DC-AC conversion circuits.
- The learning outcomes are to introduce power semiconductor devices and components, familiarize students with various conversion circuit operations and applications, and provide a basis for further power electronics study.
- The course contents will cover power semiconductor devices and characteristics, triggering circuits, single and three-phase controlled converters, and miscellaneous converters. The document outlines classroom and online learning resources.
Fundamentals of power electronics [presentation slides] 2nd ed r. erickson wwnedjaabachir
The document is the introduction chapter of the textbook "Fundamentals of Power Electronics" by Robert W. Erickson and Dragan Maksimovic. It introduces power electronics and discusses applications, elements, and goals of high efficiency. It also covers devices available to circuit designers like resistors, capacitors, magnetics, and semiconductor switches. A simple example is presented to convert a 100V input to a 50V, 10A output using a dissipative realization and a switched-mode approach.
This document provides an overview of power electronic devices. It begins with an introduction to power electronic devices and their features. It then discusses uncontrolled devices like power diodes and their characteristics. It covers half-controlled devices like thyristors and their operation. Fully-controlled devices like IGBTs, MOSFETs, and GTOs are described next along with their structures and characteristics. The document concludes with emerging devices like SITs, SITHs, MCTs, and IGCTs.
The document discusses a thermal management approach for fault-resilient design of three-level IGCT-based NPC converters. It analyzes the power device thermal stresses during overcurrent conditions when the firing mode protection is activated. Adding resilience impedances to the clamping diode branches helps restrict short circuit current through the internal IGCTs and limits their thermal stress, protecting the IGCTs even if the circuit breaker fails to operate properly during a fault. This allows damage to be confined to the freewheeling diodes instead of the more expensive IGCTs, reducing repair costs and downtime for the converter.
This document provides an overview of analog electronics topics including semiconductor diodes, bipolar transistors, single and multi-stage amplifiers, and field effect transistors. It specifically discusses diodes and how they can be used as rectifiers to convert AC to DC power. There are three main types of rectifiers: half-wave, full-wave, and bridge rectifiers. The document explains how each type of rectifier works and its peak inverse voltage rating in relation to the maximum voltage of the power source.
This document discusses using a TRIAC and optoisolator to control 220V AC loads from an Arduino board. It explains that a TRIAC can be used to control AC power by turning on and off at different points of the sine wave. An optoisolator like the MOC3041 provides isolation between the Arduino and power circuit to prevent damage. It describes how the optoisolator works, using a LED to trigger the TRIAC at zero crossings. Sample circuit diagrams show how to connect the TRIAC, optoisolator, and load. Calculations for snubber resistors and capacitors to prevent false triggering are also covered.
The document provides an overview of power electronic devices. It begins by defining power electronic devices as semiconductor devices used to convert or control electric power. It then discusses the key features of power electronic devices, including that they must handle large power levels and typically operate in switching states. The document outlines the basic configuration of a power electronic system and classifications of devices. It provides details on uncontrolled diodes, half-controlled thyristors, and fully-controlled devices. It also discusses characteristics, specifications, applications and history.
The document discusses various types of motor drives used in power electronics. It describes different power switches used in power electronic circuits like diodes, thyristors, TRIACs, IGBTs, and provides their characteristics. It also summarizes different methods of speed control for DC motors like armature voltage control, field flux control and armature resistance control. For AC induction motors, it discusses speed control methods like pole changing, stator voltage control, supply frequency control and rotor resistance control.
This document provides an introduction to the Power Electronics-I course. It discusses the following key points:
- Power electronics deals with efficient power conversion using different circuit topologies. The course will cover basic theory of power semiconductor devices, AC-DC, DC-DC, and DC-AC conversion circuits.
- The learning outcomes are to introduce power semiconductor devices and components, familiarize students with various conversion circuit operations and applications, and provide a basis for further power electronics study.
- The course contents will cover power semiconductor devices and characteristics, triggering circuits, single and three-phase controlled converters, and miscellaneous converters. The document outlines classroom and online learning resources.
Fundamentals of power electronics [presentation slides] 2nd ed r. erickson wwnedjaabachir
The document is the introduction chapter of the textbook "Fundamentals of Power Electronics" by Robert W. Erickson and Dragan Maksimovic. It introduces power electronics and discusses applications, elements, and goals of high efficiency. It also covers devices available to circuit designers like resistors, capacitors, magnetics, and semiconductor switches. A simple example is presented to convert a 100V input to a 50V, 10A output using a dissipative realization and a switched-mode approach.
This document provides an overview of power electronic devices. It begins with an introduction to power electronic devices and their features. It then discusses uncontrolled devices like power diodes and their characteristics. It covers half-controlled devices like thyristors and their operation. Fully-controlled devices like GTOs, IGBTs, MOSFETs are described along with their structures, characteristics and examples. The document concludes with emerging devices like SITs, SITHs, MCTs and IGCTs.
Power electronics involves controlling the flow of electrical energy through electronic circuits. Rectifiers and inverters are common examples. Power electronics emphasizes large semiconductor devices, magnetic energy storage, and control methods for nonlinear systems. It plays a central role in energy systems and alternative resources. Power electronic systems efficiently convert electrical energy from one form to another. Power electronics courses cover high voltage switching devices, rectifiers, DC-DC converters, and inverters. Thyristors like SCRs are semiconductor devices that act as open or closed switches for control applications. SCRs are used for power control, backup lighting, and over-voltage protection.
Power electronics & power electronic systemAkshay Parmar
Power electronics involves efficiently converting electrical energy from one form to another using semiconductor devices. It deals with modifying electrical energy on a power level rather than signal level. Power electronic converters can be found wherever electrical energy needs to be modified, ranging from milliwatts to hundreds of megawatts. Power conversion systems can be classified based on their input and output power types, such as AC to DC, DC to AC, DC to DC, and AC to AC conversion.
Lecture-4 : Semiconductor Power Switching Devices-1rsamurti
This document discusses power semiconductor diodes and their use as switches. It describes the ideal characteristics of a switch and compares them to practical switches. There are different types of power diodes classified based on their control, controllability, conduction, and blocking properties. The key power loss mechanisms in a switch are also explained. Different types of power diodes like standard recovery, fast recovery, Schottky, and silicon carbide diodes are described along with their recovery times and applications. Diode packages and rectifier modules are shown. The next lecture will cover more power semiconductor switching devices.
The document discusses power electronic systems and electrical drive systems. It provides an overview of power electronic converters, which are the heart of power electronics systems and are used to efficiently control and convert electric power. Modern electrical drive systems use power electronic converters with electric motors for variable speed applications, providing benefits like improved efficiency over classic fixed speed drives. The document describes different types of power electronic converters that can be used for DC drives and AC drives, including AC-DC, DC-DC, and voltage source converters.
1. The document discusses several power semiconductor devices used in power electronics, including power diodes, MOSFETs, IGBTs, and thyristors.
2. It provides information on the construction, operation, characteristics and switching behavior of each device.
3. The devices can be classified as either majority carrier devices like MOSFETs and diodes, which have very fast switching but higher voltage drops, or minority carrier devices like IGBTs and thyristors, which can block higher voltages but switch more slowly.
This document compares different types of power electronic devices. It classifies devices as uncontrollable (diodes), half-controlled (thyristors), or fully controlled (MOSFETs, IGBTs, GTOs). It describes the structure, characteristics, safe operating areas, advantages, and applications of diodes, BJTs, MOSFETs, IGBTs, thyristors, GTOs, MCTs, and RCTs. The document provides details on each device type and discusses their common uses in areas like power conversion, motor drives, UPS systems, and power transmission.
The document discusses power electronics and provides three key points:
1. Power electronics is the technology associated with efficient conversion and control of electric power using power semiconductor devices. It involves the application of circuit theory and analytical tools for efficient power conversion.
2. Power electronics has wide-ranging applications from daily appliances to automotive, industrial, renewable energy, and utility systems. It is used in devices like fans, air conditioners, electric vehicles, motor drives, solar panels, and HVDC transmission.
3. The core components of power electronics are power semiconductor switches like diodes, thyristors, MOSFETs, and IGBTs. Power electronic circuits can be classified as diode rectifiers, AC
This lecture provides an introduction to power electronics and discusses power semiconductor devices. It introduces different types of power diodes including Schottky diodes, fast recovery diodes, and line frequency diodes. The key differences between these diode types are discussed related to their reverse recovery time and applications. The lecture also discusses the switching characteristics of power diodes and important parameters like reverse recovery time and forward recovery time.
Power electronics has evolved significantly over time. Early technologies like mercury arc rectifiers were used to provide DC power from kilowatts to megawatts at voltages from 110V to 30KV. Important developments include the thyristor or silicon controlled rectifier introduced by General Electric in 1958. Power electronics devices are now rated for several hundreds of volts and amps compared to signal level devices that work at few volts and milliamps. Power electronics combines power engineering, control systems, and analog electronics to regulate electrical energy. It includes five main circuit types: rectifiers to convert AC to DC, choppers to vary DC levels, inverters to convert DC to variable AC, voltage regulators to vary AC levels, and cyclo
The document discusses power electronics and provides an overview in 3 paragraphs or less:
Power electronics deals with using power semiconductor devices like thyristors and transistors to convert and control electrical energy at high power levels. It involves analog circuits, control systems, power systems, electronics devices, electric machines, and numerical simulation. Main areas of power electronics include AC to DC converters, DC to DC converters, AC to AC converters, and DC to AC converters which use devices like thyristors, transistors, and integrated circuits to convert between different voltage types. Diagrams and examples of different converter types are provided along with their operating principles and applications.
Power electronics deals with controlling and converting electric power using semiconductor devices. Power electronic converters are at the heart of power electronics systems and are used to control motors, lighting, temperature, solar panels, wind turbines, welding machines, battery chargers, elevators, electric vehicles, exercise equipment and UPS systems. They convert power from AC to DC, DC to AC, or DC to DC depending on the application and allow control of output voltage, current and frequency.
Introduction to Power Electronics, Power Diodes, Thyristors and Power Transistors. Different types of Power Converters, Applications of Power Electronics and Peripheral effects.
Power electronics combines power engineering, electronics, and control systems to control and convert electric power using solid state semiconductor devices like thyristors. Some key applications of power electronics include motor control, lighting control, high voltage DC transmission, consumer appliances, industrial equipment, and renewable energy systems. The first power electronics device was the mercury arc rectifier in 1900, while the thyristor revolutionized power electronics in the 1950s and 1960s enabling much greater control of electric power. Common power semiconductor devices used in power electronics include power diodes, thyristors, transistors, MOSFETs, and IGBTs, with each having different characteristics that make them suitable for different power rating and switching speed needs.
Lecture-3 : More Applications of Power Electronicsrsamurti
This is the third lecture on Power Electronics. This describes some more applications of Power Electronics to help the student understand the importance of Power Electronics in present and future technology.
This document outlines the course structure for EE 1353 - Power Electronics. The course is divided into 5 units covering various power semiconductor devices, phase-controlled converters, DC to DC converters, inverters, and AC voltage controllers. It also lists topics for assignments on a two-transistor model, buck-boost and cuk converters, and voltage and current source inverters. Seminar topics include MOSFETs, special semiconductor devices, inverter operation, PWM techniques, three-phase full-wave controllers, and cycloconverters. The course is taught by K. Anish in the Department of Electrical and Electronics Engineering.
This document provides an introduction to power electronics. It defines power electronics as the technology associated with efficient conversion and control of electric power using power semiconductor devices. The future of global society will be dominated by computers and power electronics, with the former providing intelligence and the latter providing the means. Power electronics has many applications and is multidisciplinary, drawing from fields like signal processing, electronics, electromagnetics, and control theory. It describes the types of power electronic circuits like rectifiers, converters, choppers, inverters, and AC-AC converters. Power devices are also classified based on the number of terminals, charge carriers, and degree of controllability.
The document discusses electrical drive systems and power electronic converters used in drives. It begins by explaining what power electronics are and their applications. Modern electrical drive systems often use power electronic converters to efficiently control electric motors and improve performance over traditional fixed speed drives. Power electronic converters can be configured in different ways depending on the drive application and whether an AC or DC motor is used. Common converter configurations for DC drives include AC-DC, AC-DC-DC, and various DC-DC converter topologies.
The document discusses advancements in inverter technology. It provides background on inverters and their standard functions of converting DC to AC and integrating distributed energy resources. It then describes advanced inverter functions like reactive power control and voltage/frequency ride-through that provide grid support benefits. Challenges to adoption include developing interoperability standards and ensuring safety. Advancements in PV inverters include the shift from string to micro inverters. Other applications of inverter technology include air conditioners, microwaves, welding equipment and electric vehicles.
This document provides an overview of power electronics. It discusses different types of power electronic converters including rectifiers, inverters, DC-DC converters, and AC-AC converters. It also covers topics like harmonics, semiconductor devices used in power electronics, and applications of power electronics. The document is divided into multiple chapters that go into further details on specific topics like diode and thyristor rectifiers, Fourier analysis, and effects of harmonics on power system components.
This document provides an introduction to the topic of power electronics. It defines power electronics as the technology associated with efficient conversion and control of electric power using power semiconductor devices. The goal of power electronics is to supply high quality power to loads while minimizing pollution and losses. Common converter types are also introduced, including rectifiers, inverters, choppers, and cycloconverters. A multidisciplinary approach is emphasized.
This document provides an overview of power electronic devices. It begins with an introduction to power electronic devices and their features. It then discusses uncontrolled devices like power diodes and their characteristics. It covers half-controlled devices like thyristors and their operation. Fully-controlled devices like GTOs, IGBTs, MOSFETs are described along with their structures, characteristics and examples. The document concludes with emerging devices like SITs, SITHs, MCTs and IGCTs.
Power electronics involves controlling the flow of electrical energy through electronic circuits. Rectifiers and inverters are common examples. Power electronics emphasizes large semiconductor devices, magnetic energy storage, and control methods for nonlinear systems. It plays a central role in energy systems and alternative resources. Power electronic systems efficiently convert electrical energy from one form to another. Power electronics courses cover high voltage switching devices, rectifiers, DC-DC converters, and inverters. Thyristors like SCRs are semiconductor devices that act as open or closed switches for control applications. SCRs are used for power control, backup lighting, and over-voltage protection.
Power electronics & power electronic systemAkshay Parmar
Power electronics involves efficiently converting electrical energy from one form to another using semiconductor devices. It deals with modifying electrical energy on a power level rather than signal level. Power electronic converters can be found wherever electrical energy needs to be modified, ranging from milliwatts to hundreds of megawatts. Power conversion systems can be classified based on their input and output power types, such as AC to DC, DC to AC, DC to DC, and AC to AC conversion.
Lecture-4 : Semiconductor Power Switching Devices-1rsamurti
This document discusses power semiconductor diodes and their use as switches. It describes the ideal characteristics of a switch and compares them to practical switches. There are different types of power diodes classified based on their control, controllability, conduction, and blocking properties. The key power loss mechanisms in a switch are also explained. Different types of power diodes like standard recovery, fast recovery, Schottky, and silicon carbide diodes are described along with their recovery times and applications. Diode packages and rectifier modules are shown. The next lecture will cover more power semiconductor switching devices.
The document discusses power electronic systems and electrical drive systems. It provides an overview of power electronic converters, which are the heart of power electronics systems and are used to efficiently control and convert electric power. Modern electrical drive systems use power electronic converters with electric motors for variable speed applications, providing benefits like improved efficiency over classic fixed speed drives. The document describes different types of power electronic converters that can be used for DC drives and AC drives, including AC-DC, DC-DC, and voltage source converters.
1. The document discusses several power semiconductor devices used in power electronics, including power diodes, MOSFETs, IGBTs, and thyristors.
2. It provides information on the construction, operation, characteristics and switching behavior of each device.
3. The devices can be classified as either majority carrier devices like MOSFETs and diodes, which have very fast switching but higher voltage drops, or minority carrier devices like IGBTs and thyristors, which can block higher voltages but switch more slowly.
This document compares different types of power electronic devices. It classifies devices as uncontrollable (diodes), half-controlled (thyristors), or fully controlled (MOSFETs, IGBTs, GTOs). It describes the structure, characteristics, safe operating areas, advantages, and applications of diodes, BJTs, MOSFETs, IGBTs, thyristors, GTOs, MCTs, and RCTs. The document provides details on each device type and discusses their common uses in areas like power conversion, motor drives, UPS systems, and power transmission.
The document discusses power electronics and provides three key points:
1. Power electronics is the technology associated with efficient conversion and control of electric power using power semiconductor devices. It involves the application of circuit theory and analytical tools for efficient power conversion.
2. Power electronics has wide-ranging applications from daily appliances to automotive, industrial, renewable energy, and utility systems. It is used in devices like fans, air conditioners, electric vehicles, motor drives, solar panels, and HVDC transmission.
3. The core components of power electronics are power semiconductor switches like diodes, thyristors, MOSFETs, and IGBTs. Power electronic circuits can be classified as diode rectifiers, AC
This lecture provides an introduction to power electronics and discusses power semiconductor devices. It introduces different types of power diodes including Schottky diodes, fast recovery diodes, and line frequency diodes. The key differences between these diode types are discussed related to their reverse recovery time and applications. The lecture also discusses the switching characteristics of power diodes and important parameters like reverse recovery time and forward recovery time.
Power electronics has evolved significantly over time. Early technologies like mercury arc rectifiers were used to provide DC power from kilowatts to megawatts at voltages from 110V to 30KV. Important developments include the thyristor or silicon controlled rectifier introduced by General Electric in 1958. Power electronics devices are now rated for several hundreds of volts and amps compared to signal level devices that work at few volts and milliamps. Power electronics combines power engineering, control systems, and analog electronics to regulate electrical energy. It includes five main circuit types: rectifiers to convert AC to DC, choppers to vary DC levels, inverters to convert DC to variable AC, voltage regulators to vary AC levels, and cyclo
The document discusses power electronics and provides an overview in 3 paragraphs or less:
Power electronics deals with using power semiconductor devices like thyristors and transistors to convert and control electrical energy at high power levels. It involves analog circuits, control systems, power systems, electronics devices, electric machines, and numerical simulation. Main areas of power electronics include AC to DC converters, DC to DC converters, AC to AC converters, and DC to AC converters which use devices like thyristors, transistors, and integrated circuits to convert between different voltage types. Diagrams and examples of different converter types are provided along with their operating principles and applications.
Power electronics deals with controlling and converting electric power using semiconductor devices. Power electronic converters are at the heart of power electronics systems and are used to control motors, lighting, temperature, solar panels, wind turbines, welding machines, battery chargers, elevators, electric vehicles, exercise equipment and UPS systems. They convert power from AC to DC, DC to AC, or DC to DC depending on the application and allow control of output voltage, current and frequency.
Introduction to Power Electronics, Power Diodes, Thyristors and Power Transistors. Different types of Power Converters, Applications of Power Electronics and Peripheral effects.
Power electronics combines power engineering, electronics, and control systems to control and convert electric power using solid state semiconductor devices like thyristors. Some key applications of power electronics include motor control, lighting control, high voltage DC transmission, consumer appliances, industrial equipment, and renewable energy systems. The first power electronics device was the mercury arc rectifier in 1900, while the thyristor revolutionized power electronics in the 1950s and 1960s enabling much greater control of electric power. Common power semiconductor devices used in power electronics include power diodes, thyristors, transistors, MOSFETs, and IGBTs, with each having different characteristics that make them suitable for different power rating and switching speed needs.
Lecture-3 : More Applications of Power Electronicsrsamurti
This is the third lecture on Power Electronics. This describes some more applications of Power Electronics to help the student understand the importance of Power Electronics in present and future technology.
This document outlines the course structure for EE 1353 - Power Electronics. The course is divided into 5 units covering various power semiconductor devices, phase-controlled converters, DC to DC converters, inverters, and AC voltage controllers. It also lists topics for assignments on a two-transistor model, buck-boost and cuk converters, and voltage and current source inverters. Seminar topics include MOSFETs, special semiconductor devices, inverter operation, PWM techniques, three-phase full-wave controllers, and cycloconverters. The course is taught by K. Anish in the Department of Electrical and Electronics Engineering.
This document provides an introduction to power electronics. It defines power electronics as the technology associated with efficient conversion and control of electric power using power semiconductor devices. The future of global society will be dominated by computers and power electronics, with the former providing intelligence and the latter providing the means. Power electronics has many applications and is multidisciplinary, drawing from fields like signal processing, electronics, electromagnetics, and control theory. It describes the types of power electronic circuits like rectifiers, converters, choppers, inverters, and AC-AC converters. Power devices are also classified based on the number of terminals, charge carriers, and degree of controllability.
The document discusses electrical drive systems and power electronic converters used in drives. It begins by explaining what power electronics are and their applications. Modern electrical drive systems often use power electronic converters to efficiently control electric motors and improve performance over traditional fixed speed drives. Power electronic converters can be configured in different ways depending on the drive application and whether an AC or DC motor is used. Common converter configurations for DC drives include AC-DC, AC-DC-DC, and various DC-DC converter topologies.
The document discusses advancements in inverter technology. It provides background on inverters and their standard functions of converting DC to AC and integrating distributed energy resources. It then describes advanced inverter functions like reactive power control and voltage/frequency ride-through that provide grid support benefits. Challenges to adoption include developing interoperability standards and ensuring safety. Advancements in PV inverters include the shift from string to micro inverters. Other applications of inverter technology include air conditioners, microwaves, welding equipment and electric vehicles.
This document provides an overview of power electronics. It discusses different types of power electronic converters including rectifiers, inverters, DC-DC converters, and AC-AC converters. It also covers topics like harmonics, semiconductor devices used in power electronics, and applications of power electronics. The document is divided into multiple chapters that go into further details on specific topics like diode and thyristor rectifiers, Fourier analysis, and effects of harmonics on power system components.
This document provides an introduction to the topic of power electronics. It defines power electronics as the technology associated with efficient conversion and control of electric power using power semiconductor devices. The goal of power electronics is to supply high quality power to loads while minimizing pollution and losses. Common converter types are also introduced, including rectifiers, inverters, choppers, and cycloconverters. A multidisciplinary approach is emphasized.
International Journals of Power Electronics Controllers and Converters
published peer-reviewed articles on research and development both experimental and theoretical. Journal covers a wide range of topics including DC to DC converter, voltage converter and regulator. The aim of the journal is to maintain a fluent flow of information from researchers to readers who are tracking their work and create a new trend of research publication in the scientific community.
The document describes the operation of a single phase semi-converter circuit with an R-L load. It has two SCRs and two diodes arranged in a bridge configuration, which allows current to flow in only one direction, making it a single quadrant converter. The operation involves four modes - in modes 1 and 3 current flows from the supply to the load through one of the SCRs, storing energy in the inductive load. In modes 2 and 4, freewheeling occurs through the diodes as the supply voltage changes polarity, maintaining current flow with the stored energy in the inductor.
The document discusses a three phase diode rectifier presentation. It describes several three phase rectifier circuits including a half wave rectifier using three diodes, a six pulse midpoint rectifier, and a full wave bridge rectifier using six diodes. Equations are provided for the output voltage and current calculations for each circuit. Key specifications of automotive-grade rectifier diodes are also listed.
The document summarizes a seminar presentation on AC-DC converters given by Ankur Mahajan. The presentation covered single phase half wave and full wave converters. It discussed various rectifier types including uncontrolled, half controlled, and fully controlled bridges. It provided calculations for average and RMS voltage values for different converter configurations under resistive and inductive loads. The presentation also covered single phase half controlled and fully controlled bridge converters in both continuous and discontinuous conduction modes.
This document discusses power electronics and provides an overview of key concepts:
1. Power electronics refers to controlling and converting electrical power using power semiconductor devices like SCRs. Main applications include rectification, inversion, DC-DC conversion, and AC-AC conversion.
2. Rectification can be uncontrolled using diodes or controlled using SCRs. Common rectifier configurations include single and three-phase bridge rectifiers. Inversion converts DC to AC using devices like SCRs, IGBTs, and MOSFETs.
3. DC-DC conversion is commonly done using switch-mode power supplies with devices like BJTs and MOSFETs. AC-AC conversion using cycloconverters
The document discusses different types of DC to AC converters known as inverters. It describes the operation of voltage source inverters that can generate square wave or sinusoidal outputs using pulse width modulation techniques. PWM allows control over the output voltage amplitude while pushing harmonics to higher frequencies for easier filtering. The document also introduces half-bridge inverters, three-phase inverters, and discusses performance parameters and harmonic analysis of inverter outputs.
Power electronics phase control rectifierKUMAR GOSWAMI
The document discusses phase control rectifiers and their operating principles. It covers topics like single phase half wave control with resistive and RL loads, including the use of a freewheeling diode. It discusses various performance parameters like average output voltage, power factor, current distortion factor, rectification ratio and more. It also covers single phase half wave control with RLE loads and full wave controlled converters using midpoint and bridge configurations.
International Journals of Power Electronics Controllers and Converters
published peer-reviewed articles on research and development both experimental and theoretical. Journal covers a wide range of topics including DC to DC converter, voltage converter and regulator. The aim of the journal is to maintain a fluent flow of information from researchers to readers who are tracking their work and create a new trend of research publication in the scientific community.
The document describes a three-phase, full-wave rectifier circuit using 6 diodes arranged in a bridge configuration. The upper diodes (D1, D3, D5) form the positive group and conduct during the positive half cycles of the input voltage. The lower diodes (D2, D4, D6) form the negative group and conduct during the negative half cycles. Calculations are provided for the output voltage, current, power, ripple, efficiency and transformer utilization factor of the three-phase full-wave rectifier.
This document discusses various AC to DC converter circuits including single-phase and three-phase controlled rectifiers. For single-phase circuits, it examines half-wave, full-wave and bridge configurations for both resistive and inductive loads. For three-phase circuits, it analyzes half-wave and fully controlled bridge rectifiers. It provides voltage and current waveforms and equations for average output values under different operating conditions. It also discusses considerations for analysis such as assuming a large inductor or different linear circuit approximations based on device switching states.
basic power electronics devices chapter1.ppt.pdfyogeshkute7
This document provides an overview of power electronic devices. It discusses the basic concepts including classifications of devices as uncontrolled, half-controlled, or fully-controlled. Power diodes are introduced as an example uncontrolled device. Their structure and operation as a PN junction is explained. Construction details are provided for practical power diodes used in power electronics applications.
This document provides an overview of power electronic devices. It begins with an introduction to power electronic devices and their features. It then discusses uncontrolled devices like power diodes and their characteristics. It covers half-controlled devices like thyristors and their operation. Fully-controlled devices like IGBTs, MOSFETs, and GTOs are described next along with their structures and characteristics. The document concludes with emerging devices like SITs, SITHs, MCTs, and IGCTs.
This document provides an overview of power electronic devices. It begins with an introduction describing power electronic devices as electronic devices that can directly process electric power by converting or controlling it. It then discusses some key device types including uncontrolled diodes, half-controlled thyristors, and fully-controlled devices like GTOs, MOSFETs, and IGBTs. For each device type, the document covers topics like appearance, structure, operation principles, and characteristics. It provides examples of commercial power devices and their specifications.
Power electronics devices and their characteristicsKartickJana3
This document discusses power electronic devices and their characteristics. It describes several types of power devices including bipolar junction transistors (BJT), field effect transistors (FET), thyristors, Darlington transistors, and insulated gate bipolar transistors (IGBT). It covers the key characteristics, operating principles, and ratings of these devices. It also discusses how snubber circuits using inductors, resistors, and capacitors can be designed to protect power devices from high rates of change of current (di/dt) and voltage (dv/dt) during switching.
Chapter 1 Introduction to power Electronic Devices.pdfLiewChiaPing
The document provides an introduction to power electronics. It discusses power electronic systems and various types of electronic converters including AC-DC, DC-DC, DC-AC, and AC-AC converters. It also describes common power semiconductor devices such as power diodes, thyristors, MOSFETs, IGBTs, and IGCTs. Applications of power electronics in areas like power supplies, motor drives, renewable energy and power transmission are also highlighted. Gate drive circuits, switching losses, and heat dissipation in power switches are some other topics covered in the document.
This document outlines the syllabus for a Power System Protection course, including 5 units: introduction, relay operating principles and characteristics, apparatus protection, theory of circuit interruption, and circuit breakers. It provides an overview of key concepts like faults and fault currents in power systems, the importance of protective schemes, and components of protection systems like relays, circuit breakers, and batteries. The document also shares diagrams to illustrate power system configurations and protective devices.
1. The document describes a three phase protection circuit that monitors the availability of three phase power supply and switches off connected appliances in the event of failure of one or two phases. It uses three 12V relays, a 555 timer IC, and a 230V coil contactor with four poles.
2. Key components of the protection circuit are described, including relays, contactors, 555 timer IC, diodes, zener diodes, transistors, capacitors, resistors, transformers, and optocoupler ICs. The operation of the three phase protection circuit is also explained.
3. The circuit automatically disconnects power to protected appliances through the contactor when any phase fails, and automatically restores
Switchgear and control panels contain electrical disconnects, fuses, and circuit breakers to control, protect, and isolate equipment in power systems. Solid state devices like diodes, thyristors, transistors, and other semiconductors are increasingly used for control and protection over mechanical devices due to greater reliability and speed. Power semiconductor devices must conduct large currents with low losses while blocking high voltages, which is achieved through lightly doped drift layers between heavily doped layers.
chapter_1 Intro. to electonic Devices.pptLiewChiaPing
The document discusses power electronics concepts and devices. It begins with an introduction to power electronics and outlines various power electronic converters including controlled rectifiers, choppers, inverters, cycloconverters, and AC voltage controllers. It then discusses applications of power electronic converters in various industries. The document also describes several power semiconductor devices used in power electronics, such as power diodes, transistors, MOSFETs, IGBTs, thyristors, GTOs, and IGCTs. It covers the characteristics, ratings, and drive circuits of these devices.
The document is a presentation about power management fundamentals from Analog Devices. It discusses different types of power conversion and regulation products like linear voltage regulators and switching regulators. It explains the need for stable, clean power supplies to avoid noise and errors in high-precision systems. Key topics covered include linear regulators, switching regulators, power distribution, minimizing noise and ripple, and tips for successful power design. The presentation is part of Analog Devices' 2011 webcast series on signal processing fundamentals.
This document provides an overview of protection and switchgear for an electrical engineering course. It includes definitions of key components in a power system like transformers, circuit breakers, and protective relays. It also describes the purpose of a protection system to isolate faults and prevent equipment damage. Additional sections cover current and voltage transformers, batteries, fuses, lighting arresters, and the different categories and functions of switchgear.
This paper represents the topology and hardware design of Embedded-Z (EZ) source feed induction motor. Conventionally there are two converters used for ASD systems i.e. Voltage Source Inverter (VSI) and Current Source Inverter (CSI), but they have a limited output voltage range. Conventional VSI and CSI support only either buck or boost DC-AC power conversion and need a relatively complex modulator. The problems in traditional source converters can be overcome by Z source inverter. In this LC impedance are employed for fast power conversion. Due to requirement of additional LC filter the cost of operation also increases.
This ppt explains Ultra Fast Acting Electronic Circuit Breaker, student is provided with his/her authorized tag to swipe over the reader to record their attendance.
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The document describes an ultra fast acting electronic circuit breaker. It uses a microcontroller to monitor the voltage drop across a current sensing resistor and compare it to a preset threshold. When the threshold is exceeded, the microcontroller triggers a relay through a MOSFET to disconnect the load. This allows for faster response than a thermal circuit breaker and protects equipment from overload. Key components include a microcontroller, current sensing resistor, comparator, relay, and MOSFET. The circuit breaker provides overcurrent protection for electrical devices.
This document outlines the syllabus for a Power Electronics course. It covers key topics like power semiconductor switches, AC-DC converters, DC-DC converters, AC-DC inverters, and AC-AC converters. Specific units will discuss power switching devices, phase controlled rectifiers, choppers/SMPS, inverters, and voltage regulators. The course aims to develop skills for designing power converters for drive and power system applications and to understand commercial and industrial power electronics applications.
Power Electronics Basic by Engr.Rajesh Royrajesh roy
This document introduces power electronics and discusses various topics including definitions, applications, power semiconductor switches, and losses. It describes how power electronics is used to convert electrical power efficiently from one form to another to suit user loads. The basic components of power electronics systems include an input power source, power processor, controller, and load. Examples of applications in static power supplies and motor drives are provided. Common power semiconductor switches like diodes, thyristors, BJTs, MOSFETs, and IGBTs are also introduced along with their characteristics.
Week1&2 comm., for engineering techniciansTriza Kamel
This document provides guidance for engineering technicians on interpreting engineering drawings for electronic, electrical, and communication circuits. It begins with an overview of the steps to interpret engineering information, which are to identify components, understand their purpose, and determine the overall circuit purpose. It then details the standard symbols and functions of common circuit components for electronic circuits like wires, power supplies, switches and resistors. The same is done for electrical circuits covering logic gates. Finally, communication circuit components are explained including routers, switches, hubs and network diagrams. Activities are included to have technicians interpret sample circuit diagrams.
This document describes a wireless switch circuit control system that uses a light dependent resistor (LDR) to detect hand gestures and switch electronic appliances on and off. When a hand is placed over the LDR, it causes the circuit to toggle a JK flip-flop, changing the output and switching the appliance. The circuit provides contactless switching to reduce electric shocks while allowing children to safely operate devices. It uses common electronic components like an LDR, capacitor, resistor, transistor, diode and operational amplifier.
This document summarizes a stand-by power loss preventer device that uses electromagnetic induction to sense when a CRT monitor is turned on and provide power only during active use. The circuit uses an op-amp and transistors to detect electromagnetic radiation from the monitor and energize a relay to supply mains power. When the monitor is turned off, the relay is de-energized after a delay to cut off power. The device aims to eliminate standby power loss and can save up to 45% of the main power supply for applicable CRT-based electronics.
Similar to Chapter1 131114022851-phpapp02 (2) (20)
Este documento resume um estudo de tempos e métodos de produção realizado numa empresa do setor automóvel. O estudo analisou os processos de montagem de dois modelos, identificando diferenças entre os processos reais e os descritos nos relatórios de roteamento. Foram também cronometrados tempos de produção por posto de trabalho. Os resultados obtidos permitiram o balanceamento de duas linhas de produção.
The document analyzes the dielectric properties of mineral oil and synthetic ester oil used for transformer insulation through accelerated thermal aging tests. It describes the extraction and production processes of ester oil from various plant and animal sources. The experimental results on breakdown voltage, dielectric dissipation factor, relative permittivity, and humidity are presented and compared to previous studies.
The document discusses various applications of power electronics in modern power systems. It describes problems in current power grids like growing demand, constraints on expansion, and instability issues. FACTS controllers and STATCOMs are presented as power electronic solutions that can control power flow and increase transmission capacity. Other applications discussed include flexible reactive power compensation using SVCs, high voltage direct current transmission for long lines, and power electronic interfaces in renewable energy systems like solar, wind and fuel cells to integrate with the grid. The document emphasizes that power electronics enables higher efficiency, reliability and economy in industrial and energy systems.
This document discusses several applications of power electronics, including:
1) Motor drives and variable speed drives which use power electronics to vary motor speed in an efficient manner and save energy in applications like pumps and fans.
2) Power supplies like switched mode power supplies which are more compact and efficient than conventional supplies due to the use of power electronics.
3) Lighting applications like LED drivers, CFL controllers, and electronic fan speed regulators which incorporate power electronics to efficiently control and regulate power flow.
This document discusses power semiconductor diodes and their use as switches. It describes the ideal characteristics of a switch and compares them to practical switches. There are different types of power diodes classified based on their control, controllability, conduction, and blocking properties. The key power loss mechanisms in a switch are also summarized. Different types of power diodes like standard recovery, fast recovery, Schottky, and silicon carbide diodes are described along with their recovery times and applications. Diode packages and rectifier modules are shown. The next lecture will cover more power semiconductor switching devices.
1. The document discusses the structure, operation, and characteristics of silicon controlled rectifiers (SCRs). SCRs are semiconductor devices that act as electrically controlled switches.
2. The key aspects covered include the two-transistor model of an SCR, conditions for turn on and turn off, factors affecting turn on such as voltage and temperature, and methods of turning off an SCR.
3. Design considerations for SCRs like snubber circuits, gate protection, and turn on/off characteristics are also summarized. Different packages for SCRs like disc, stud, and power modules are shown along with specifications.
This document discusses the structure, operation, and characteristics of bipolar junction transistors (BJTs) used as power switching devices.
It describes the common collector-emitter (CE) configuration used for power BJTs and explains how the output characteristics and switching times are affected by operating regions like saturation. Common techniques like Darlington connections, Baker's clamping circuit, and base drive isolation using optocouplers are summarized.
The document also provides an example power BJT specification sheet and lists some key demerits of using BJTs for power switching like high base drive needs, susceptibility to second breakdown, and difficulty in parallel operation. It concludes that MOSFETs and IGBTs are now
This document provides an overview of power electronics. It discusses different types of power electronic converters including rectifiers, inverters, DC-DC converters, and AC-AC converters. It also covers topics like harmonics, semiconductor devices used in power electronics, and applications of power electronics. The document contains chapters that go into more detail on specific topics like diode rectifiers, thyristor rectifiers, Fourier analysis, and more.
1. The document discusses several power semiconductor devices used in power electronics, including power diodes, MOSFETs, IGBTs, and thyristors.
2. It provides information on the construction, operation, characteristics and switching behavior of each device.
3. The devices can be classified as either majority carrier devices like MOSFETs and diodes, which have very fast switching but higher voltage drops, or minority carrier devices like IGBTs and thyristors, which can block higher voltages but switch more slowly.
Este documento é uma apostila sobre o tiristor SCR (Silicon Controlled Rectifier) produzida por um professor de eletrônica de potência. A apostila descreve as características, operação e aplicações do SCR, além de circuitos de disparo e proteção. Inclui também exemplos de encapsulamentos de SCR e problemas propostos para os alunos.
Este documento descreve diferentes tipos de tiristores, dispositivos semicondutores que apresentam histerese na sua característica corrente-tensão. Descreve a estrutura e funcionamento do díodo de quatro camadas, o dispositivo mais elementar, e dos principais tiristores como o SCR e o TRIAC. Explica também aspectos dinâmicos como os tempos de passagem entre os estados de condução e bloqueio.
O documento resume as características e operação do MOSFET tipo depleção. Ele possui um canal previamente formado e pode operar nos modos de depleção ou enriquecimento. No modo depleção, o MOSFET se comporta de forma similar ao JFET, com a corrente de draino ID igual à corrente de saturação IDSS quando a tensão gate-source VGS é zero e menor que IDSS quando VGS é negativa. No modo enriquecimento, ID é maior que IDSS quando VGS é positiva.
Introduction- e - waste – definition - sources of e-waste– hazardous substances in e-waste - effects of e-waste on environment and human health- need for e-waste management– e-waste handling rules - waste minimization techniques for managing e-waste – recycling of e-waste - disposal treatment methods of e- waste – mechanism of extraction of precious metal from leaching solution-global Scenario of E-waste – E-waste in India- case studies.
Use PyCharm for remote debugging of WSL on a Windo cf5c162d672e4e58b4dde5d797...shadow0702a
This document serves as a comprehensive step-by-step guide on how to effectively use PyCharm for remote debugging of the Windows Subsystem for Linux (WSL) on a local Windows machine. It meticulously outlines several critical steps in the process, starting with the crucial task of enabling permissions, followed by the installation and configuration of WSL.
The guide then proceeds to explain how to set up the SSH service within the WSL environment, an integral part of the process. Alongside this, it also provides detailed instructions on how to modify the inbound rules of the Windows firewall to facilitate the process, ensuring that there are no connectivity issues that could potentially hinder the debugging process.
The document further emphasizes on the importance of checking the connection between the Windows and WSL environments, providing instructions on how to ensure that the connection is optimal and ready for remote debugging.
It also offers an in-depth guide on how to configure the WSL interpreter and files within the PyCharm environment. This is essential for ensuring that the debugging process is set up correctly and that the program can be run effectively within the WSL terminal.
Additionally, the document provides guidance on how to set up breakpoints for debugging, a fundamental aspect of the debugging process which allows the developer to stop the execution of their code at certain points and inspect their program at those stages.
Finally, the document concludes by providing a link to a reference blog. This blog offers additional information and guidance on configuring the remote Python interpreter in PyCharm, providing the reader with a well-rounded understanding of the process.
Advanced control scheme of doubly fed induction generator for wind turbine us...IJECEIAES
This paper describes a speed control device for generating electrical energy on an electricity network based on the doubly fed induction generator (DFIG) used for wind power conversion systems. At first, a double-fed induction generator model was constructed. A control law is formulated to govern the flow of energy between the stator of a DFIG and the energy network using three types of controllers: proportional integral (PI), sliding mode controller (SMC) and second order sliding mode controller (SOSMC). Their different results in terms of power reference tracking, reaction to unexpected speed fluctuations, sensitivity to perturbations, and resilience against machine parameter alterations are compared. MATLAB/Simulink was used to conduct the simulations for the preceding study. Multiple simulations have shown very satisfying results, and the investigations demonstrate the efficacy and power-enhancing capabilities of the suggested control system.
Understanding Inductive Bias in Machine LearningSUTEJAS
This presentation explores the concept of inductive bias in machine learning. It explains how algorithms come with built-in assumptions and preferences that guide the learning process. You'll learn about the different types of inductive bias and how they can impact the performance and generalizability of machine learning models.
The presentation also covers the positive and negative aspects of inductive bias, along with strategies for mitigating potential drawbacks. We'll explore examples of how bias manifests in algorithms like neural networks and decision trees.
By understanding inductive bias, you can gain valuable insights into how machine learning models work and make informed decisions when building and deploying them.
Embedded machine learning-based road conditions and driving behavior monitoringIJECEIAES
Car accident rates have increased in recent years, resulting in losses in human lives, properties, and other financial costs. An embedded machine learning-based system is developed to address this critical issue. The system can monitor road conditions, detect driving patterns, and identify aggressive driving behaviors. The system is based on neural networks trained on a comprehensive dataset of driving events, driving styles, and road conditions. The system effectively detects potential risks and helps mitigate the frequency and impact of accidents. The primary goal is to ensure the safety of drivers and vehicles. Collecting data involved gathering information on three key road events: normal street and normal drive, speed bumps, circular yellow speed bumps, and three aggressive driving actions: sudden start, sudden stop, and sudden entry. The gathered data is processed and analyzed using a machine learning system designed for limited power and memory devices. The developed system resulted in 91.9% accuracy, 93.6% precision, and 92% recall. The achieved inference time on an Arduino Nano 33 BLE Sense with a 32-bit CPU running at 64 MHz is 34 ms and requires 2.6 kB peak RAM and 139.9 kB program flash memory, making it suitable for resource-constrained embedded systems.
The CBC machine is a common diagnostic tool used by doctors to measure a patient's red blood cell count, white blood cell count and platelet count. The machine uses a small sample of the patient's blood, which is then placed into special tubes and analyzed. The results of the analysis are then displayed on a screen for the doctor to review. The CBC machine is an important tool for diagnosing various conditions, such as anemia, infection and leukemia. It can also help to monitor a patient's response to treatment.
DEEP LEARNING FOR SMART GRID INTRUSION DETECTION: A HYBRID CNN-LSTM-BASED MODELgerogepatton
As digital technology becomes more deeply embedded in power systems, protecting the communication
networks of Smart Grids (SG) has emerged as a critical concern. Distributed Network Protocol 3 (DNP3)
represents a multi-tiered application layer protocol extensively utilized in Supervisory Control and Data
Acquisition (SCADA)-based smart grids to facilitate real-time data gathering and control functionalities.
Robust Intrusion Detection Systems (IDS) are necessary for early threat detection and mitigation because
of the interconnection of these networks, which makes them vulnerable to a variety of cyberattacks. To
solve this issue, this paper develops a hybrid Deep Learning (DL) model specifically designed for intrusion
detection in smart grids. The proposed approach is a combination of the Convolutional Neural Network
(CNN) and the Long-Short-Term Memory algorithms (LSTM). We employed a recent intrusion detection
dataset (DNP3), which focuses on unauthorized commands and Denial of Service (DoS) cyberattacks, to
train and test our model. The results of our experiments show that our CNN-LSTM method is much better
at finding smart grid intrusions than other deep learning algorithms used for classification. In addition,
our proposed approach improves accuracy, precision, recall, and F1 score, achieving a high detection
accuracy rate of 99.50%.
International Conference on NLP, Artificial Intelligence, Machine Learning an...gerogepatton
International Conference on NLP, Artificial Intelligence, Machine Learning and Applications (NLAIM 2024) offers a premier global platform for exchanging insights and findings in the theory, methodology, and applications of NLP, Artificial Intelligence, Machine Learning, and their applications. The conference seeks substantial contributions across all key domains of NLP, Artificial Intelligence, Machine Learning, and their practical applications, aiming to foster both theoretical advancements and real-world implementations. With a focus on facilitating collaboration between researchers and practitioners from academia and industry, the conference serves as a nexus for sharing the latest developments in the field.
UNLOCKING HEALTHCARE 4.0: NAVIGATING CRITICAL SUCCESS FACTORS FOR EFFECTIVE I...amsjournal
The Fourth Industrial Revolution is transforming industries, including healthcare, by integrating digital,
physical, and biological technologies. This study examines the integration of 4.0 technologies into
healthcare, identifying success factors and challenges through interviews with 70 stakeholders from 33
countries. Healthcare is evolving significantly, with varied objectives across nations aiming to improve
population health. The study explores stakeholders' perceptions on critical success factors, identifying
challenges such as insufficiently trained personnel, organizational silos, and structural barriers to data
exchange. Facilitators for integration include cost reduction initiatives and interoperability policies.
Technologies like IoT, Big Data, AI, Machine Learning, and robotics enhance diagnostics, treatment
precision, and real-time monitoring, reducing errors and optimizing resource utilization. Automation
improves employee satisfaction and patient care, while Blockchain and telemedicine drive cost reductions.
Successful integration requires skilled professionals and supportive policies, promising efficient resource
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2. PowerElectronics
2
OutlineOutline
1.1 An introductory overview of power electronic devices1.1 An introductory overview of power electronic devices
1.2 Uncontrolled device1.2 Uncontrolled device —— power diodepower diode
1.3 Half1.3 Half--controlled devicecontrolled device —— thyristorthyristor
1.4 Typical fully1.4 Typical fully--controlled devicescontrolled devices
1.5 Other new power electronic devices1.5 Other new power electronic devices
1.6 Drive circuit for power electronic devices1.6 Drive circuit for power electronic devices
1.7 Protection of power electronic devices1.7 Protection of power electronic devices
1.8 Series and parallel connections of power electronic1.8 Series and parallel connections of power electronic
devicesdevices
3. PowerElectronics
3
The concept and featuresThe concept and features
Configuration of systems using power electronic devicesConfiguration of systems using power electronic devices
ClassificationsClassifications
Major topicsMajor topics
1.11.1 An introductory overview of powerAn introductory overview of power
electronic deviceselectronic devices
4. PowerElectronics
4
Power electronic devices:Power electronic devices:
In broad senseIn broad sense
Very often:Very often:
Major material used in power semiconductor devicesMajor material used in power semiconductor devices
———— SiliconSilicon
are the electronic devices that can be directly used in the poweare the electronic devices that can be directly used in the powerr
processing circuits to convert or control electric power.processing circuits to convert or control electric power.
The concept of power electronic devicesThe concept of power electronic devices
power electronic devicespower electronic devices
Vacuum devices: Mercury arcVacuum devices: Mercury arc
rectifierrectifier thyratronthyratron, etc. . seldom, etc. . seldom
in use todayin use today
Semiconductor devices:Semiconductor devices:
major power electronic devicesmajor power electronic devices
Power electronic devices = Power semiconductor devicesPower electronic devices = Power semiconductor devices
5. PowerElectronics
5
Features of power electronic devicesFeatures of power electronic devices
The electric power that power electronic deviceThe electric power that power electronic device
deals with is usually much larger than that thedeals with is usually much larger than that the
information electronic device does.information electronic device does.
Usually working in switching states to reduce powerUsually working in switching states to reduce power
losseslosses
p=vi=0Off-state Current through the device is 0
i=0
p=vi=0On-state Voltage across the device is 0
v=0
6. PowerElectronics
6
Features of power electronic devicesFeatures of power electronic devices
Need to be controlled by information electronic circuits.Need to be controlled by information electronic circuits.
Very often, drive circuits are necessary to interfaceVery often, drive circuits are necessary to interface
between information circuits and power circuits.between information circuits and power circuits.
Dissipated power loss usually larger than informationDissipated power loss usually larger than information
electronic deviceselectronic devices —— special packaging and heat sinkspecial packaging and heat sink
are necessary.are necessary.
7. PowerElectronics
7
Power losses on power semiconductorPower losses on power semiconductor
devicesdevices
= conduction loss + turn= conduction loss + turn--off loss + offoff loss + off--state loss + turnstate loss + turn--on losson loss
O n -s ta te
(c o n d u c tio n s ta te )
tu rn in g -
o ff
O ff-s ta te
(b lo c k in g s ta te )
tu rn in g
-o n
t
t
t
v
i
p
Total power loss onTotal power loss on
power semiconductorpower semiconductor
Switching lossSwitching loss
(on(on--state loss)state loss)
8. PowerElectronics
8
Configuration of systems using powerConfiguration of systems using power
electronic deviceselectronic devices
Controlcircuit
detection
circuit
drive
circuit
Power circuit
(power stage,
main circuit)
Control circuit (in a broad sense)
Power electronic
system: Electric isolation:
optical, magnetic
Protection circuit is also very often used in power electronic
system especially for the expensive power semiconductors.
9. PowerElectronics
9
Terminals of a power electronic deviceTerminals of a power electronic device
C
E
G
A power electronic device
must have at least two
terminals to allow power
circuit current flow through.
A power electronic
device usually has
a third terminal —
—control terminal
to control the
states of the device.
Control signal from drive circuit must be connected between theControl signal from drive circuit must be connected between the
control terminal and a fixed power circuit terminal (thereforecontrol terminal and a fixed power circuit terminal (therefore
called common terminal ).called common terminal ).
Drive
Circuit
10. PowerElectronics
10
A classification of power electronic devicesA classification of power electronic devices
Uncontrolled device: diodeUncontrolled device: diode
(Uncontrollable device)(Uncontrollable device)
FullyFully--controlled device: Power MOSFET, IGBT,GTO, IGCTcontrolled device: Power MOSFET, IGBT,GTO, IGCT
(Fully(Fully--controllable device)controllable device)
HalfHalf--controlled device:controlled device: thyristorthyristor
(Half(Half--controllable device)controllable device)
has only two terminals and can not be controlled by control signal.
The on and off states of the device are determined by the power
circuit.
is turned-on by a control signal and turned-off by the power circuit
The on and off states of the device are controlled by control signals.
12. PowerElectronics
12
Appearance, structure, and symbolAppearance, structure, and symbol
Physics of operationPhysics of operation
CharacteristicsCharacteristics
SpecificationSpecification
Special issuesSpecial issues
Devices of the same familyDevices of the same family
Major topics for each deviceMajor topics for each device
Switching characteristicsSwitching characteristics
Static characteristicsStatic characteristics
13. PowerElectronics
13
Passive components in power electronicPassive components in power electronic
circuitcircuit
Transformer, inductor, capacitor and resistor:Transformer, inductor, capacitor and resistor:
these are passive components in a power electronicthese are passive components in a power electronic
circuit since they can not be controlled by control signal andcircuit since they can not be controlled by control signal and
their characteristics are usually constant and linear.their characteristics are usually constant and linear.
The requirements for these passive components by powerThe requirements for these passive components by power
electronic circuits could be very different from those byelectronic circuits could be very different from those by
ordinary circuits.ordinary circuits.
14. PowerElectronics
14
1.2 Uncontrolled device Power diode1.2 Uncontrolled device Power diode
AppearanceAppearance
StructureStructure SymbolSymbol
CathodeAnode
KKAA
Anode Cathode
15. PowerElectronics
15
PN junctionPN junction
-。 -。 -。
-。 -。 -。
-。 -。 -。
-。 -。 -。
-。 -。 -。
+· +· +·
+· +· +·
+· +· +·
+·
+· +
·
+· +· +·
+-
+-
+-
+-
+-
p region n region
Direction of
inner electric field
Space charge
region
(depletion region,
potential barrier
region)
Semiconductor (Column IV element,Semiconductor (Column IV element, SiSi))
Electrons and holes.Electrons and holes.
Pure semiconductor (intrinsic semiconductor)Pure semiconductor (intrinsic semiconductor)
Doping, pDoping, p--type semiconductor. Ntype semiconductor. N--type semiconductortype semiconductor
PN junctionPN junction
Equilibrium of diffusion and driftEquilibrium of diffusion and drift
16. PowerElectronics
16
PN junction with voltage applied in thePN junction with voltage applied in the
forward directionforward direction
V
+
+
+
+
+
-
-
-
-
-
np
Wo
W
+ -
17. PowerElectronics
17
PN junction with voltage applied in the reversePN junction with voltage applied in the reverse
directiondirection
+-
V
+
+
+
+
+
-
-
-
-
-
-
-
-
+
+
+
np
Wo
W
Effective direction
of electronic field
18. PowerElectronics
18
Construction of a practical power diodeConstruction of a practical power diode
Features different from lowFeatures different from low--power (information electronic) diodespower (information electronic) diodes
–– Larger size
–– Vertically oriented structure
–– n drift region (p-i-n diode)
–– Conductivity modulation
250μm
Breakdown
voltage dependent
10 μmp
Nd =10 cmn substrate -319
Na =10 cm
-319+
n epi Nd =10 cm
-314
p
Nd =10 cmn substrate -319+
Na =10 cm
-319+
n epi-
Nd =10 cm
-314
i
Anode
Cathode
+
-
V
-
21. PowerElectronics
21
The positive and negative charge in the depletion region isThe positive and negative charge in the depletion region is
variable with the changing of external voltage.variable with the changing of external voltage.
——––Junction capacitor CJunction capacitor CJJ ..
Junction capacitor CJunction capacitor CJJ
Junction capacitor influences the switching characteristics ofJunction capacitor influences the switching characteristics of
power diode.power diode.
Junction capacitorJunction capacitor
Diffusion capacitorDiffusion capacitor CCDD
Potential barrier capacitorPotential barrier capacitor CCBB
22. PowerElectronics
22
Static characteristics of power diodeStatic characteristics of power diode
The IThe I--V characteristic of power diodeV characteristic of power diode
I
O
IF
UTO UF U
23. PowerElectronics
23
Switching (dynamic) characteristics of powerSwitching (dynamic) characteristics of power
diodediode
ReverseReverse--recovery process:recovery process:
Reverse-recovery time, reverse-recovery charge,
reverse-recovery peak current.
TurnTurn--off transientoff transient
IF
UF
tF t0
trr
td
tf
t1 t2 t
UR
URP
IRP
diF
dt
diR
dt
25. PowerElectronics
25
Specifications of power diodeSpecifications of power diode
Average rectified forward current IAverage rectified forward current IF(AV)F(AV)
Forward voltage UForward voltage UFF
Peak repetitive reverse voltage UPeak repetitive reverse voltage URRMRRM
Maximum junction temperature TMaximum junction temperature TJMJM
ReverseReverse--recovery timerecovery time ttrrrr
26. PowerElectronics
26
Types of power diodesTypes of power diodes
General purpose diode (rectifier diode):General purpose diode (rectifier diode):
Fast recovery diodeFast recovery diode
SchottkySchottky diode (diode (SchottkySchottky barrier diodebarrier diode--SBD)SBD)
standard recovery
Reverse recovery time and charge specified. trr is usually
less than 1μs, for many less than 100 ns —— ultra-fast
recovery diode.
– A majority carrier device
– Essentially no recovered charge, and lower forward voltage.
– Restricted to low voltage (less than 200V)
28. PowerElectronics
28
History and applications of power diodeHistory and applications of power diode
Applied in industries starting 1950sApplied in industries starting 1950s
Still inStill in--use today. Usually working with controlleduse today. Usually working with controlled
devices as necessary componentsdevices as necessary components
In many circumstances fast recovery diodes orIn many circumstances fast recovery diodes or
schottkyschottky diodes have to be used instead of generaldiodes have to be used instead of general
purpose diodes.purpose diodes.
29. PowerElectronics
29
1.3 Half1.3 Half--controlled devicecontrolled device——ThyristorThyristor
Another name: SCRAnother name: SCR——silicon controlled rectifiersilicon controlled rectifier
ThyristorThyristor Opened the power electronics eraOpened the power electronics era
–– 1956, invention, Bell Laboratories1956, invention, Bell Laboratories
–– 1957, development of the 1st product, GE1957, development of the 1st product, GE
–– 1958, 1st commercialized product, GE1958, 1st commercialized product, GE
–– ThyristorThyristor replaced vacuum devices in almost every powerreplaced vacuum devices in almost every power
processing area.processing area.
Still in use in high power situation.Still in use in high power situation. ThyristorThyristor till has thetill has the
highest powerhighest power--handling capability.handling capability.
HistoryHistory
32. PowerElectronics
32
Physics ofPhysics of thyristorthyristor operationoperation
Equivalent circuit: AEquivalent circuit: A pnppnp
transistor and antransistor and an npnnpn transistortransistor
interconnected togetherinterconnected together
Positive feedbackPositive feedback
TriggerTrigger
Can not be turned off by controlCan not be turned off by control
signalsignal
HalfHalf--controllablecontrollable
33. PowerElectronics
33
Quantitative description ofQuantitative description of thyristorthyristor operationoperation
IIc1c1==αα11 IIAA ++ IICBO1CBO1 ((11--11))
IIc2c2==αα22 IIKK ++ IICBO2CBO2 ((11--22))
IIKK==IIAA++IIGG ((11--33))
IIAA==IIcc11++IIcc22 ((11--44))
)(1 21
CBO2CBO1G2
A
αα
α
+−
++
=
III
I ((11--55))
When IWhen IGG=0,=0, αα11+α+α22 is small.is small.
When IWhen IGG>0,>0, αα11+α+α22 will approach 1, Iwill approach 1, IAA will be very large.will be very large.
34. PowerElectronics
34
Other methods to triggerOther methods to trigger thyristorthyristor onon
High voltage across anode and cathodeHigh voltage across anode and cathode——
avalanche breakdownavalanche breakdown
High rising rate of anodeHigh rising rate of anode voltagtevoltagte —— du/dtdu/dt too hightoo high
High junction temperatureHigh junction temperature
Light activationLight activation
35. PowerElectronics
35
Static characteristics ofStatic characteristics of thyristorthyristor
Blocking when reverseBlocking when reverse
biased, no matter if therebiased, no matter if there
is gate current appliedis gate current applied
Conducting only whenConducting only when
forward biased and thereforward biased and there
is triggering currentis triggering current
applied to the gateapplied to the gate
Once triggered on, will beOnce triggered on, will be
latched on conductinglatched on conducting
even when the gateeven when the gate
current is no longercurrent is no longer
appliedapplied
Turning off: decreasingTurning off: decreasing
current to be near zerocurrent to be near zero
with the effect of externalwith the effect of external
power circuitpower circuit
Gate IGate I--V characteristicsV characteristics
O U Ak
IA
I
H
IG2
IG1
IG
=0
U bo
U DSM
U DRM
U RRM
U RSM
forwardforward
conductingconducting
avalancheavalanche
breakdownbreakdown
reversereverse
blockingblocking
increasing IG
forwardforward
blockingblocking
36. PowerElectronics
36
Switching characteristics ofSwitching characteristics of thyristorthyristor
TurnTurn--on transienton transient
–– Delay time tDelay time tdd
–– Rise timeRise time ttrr
–– TurnTurn--on timeon time ttgtgt
TurnTurn--off transientoff transient
–– Reverse recoveryReverse recovery
timetime ttrrrr
–– Forward recoveryForward recovery
timetime ttgrgr
–– TurnTurn--off timeoff time ttqq
100%
90%
10%
uAK
t
tO
0 td
tr
trr tgr
URRM
IRM
iA
37. PowerElectronics
37
Specifications ofSpecifications of thyristorthyristor
Peak repetitive forward blocking voltage UPeak repetitive forward blocking voltage UDRMDRM
Peak repetitive reverse blocking voltage UPeak repetitive reverse blocking voltage URRMRRM
Peak onPeak on--state voltage Ustate voltage UTMTM
Average onAverage on--state current Istate current IT(AV)T(AV)
Holding current IHolding current IHH
Latching up current ILatching up current ILL
Peak forward surge current IPeak forward surge current ITSMTSM
du/dtdu/dt
di/dtdi/dt
38. PowerElectronics
38
The family ofThe family of thyristorsthyristors
Fast switchingFast switching thyristorthyristor——FSTFST
Triode AC switchTriode AC switch——TRIACTRIAC
(Bi(Bi--directional triodedirectional triode thyristorthyristor))
ReverseReverse--conductingconducting thyristorthyristor LightLight--triggered (triggered (activitedactivited)) thyristorthyristor
——RCTRCT ——LTTLTT
I
O U
IG=0
K
G
A
A
G
K
G
K
A
G
T1
T2
39. PowerElectronics
39
1.4 Typical fully1.4 Typical fully--controlled devicescontrolled devices
1.4.1 Gate1.4.1 Gate--turnturn--offoff thyristorthyristor ——GTOGTO
1.4.2 Giant transistor1.4.2 Giant transistor ——GTRGTR
1.4.3 Power metal1.4.3 Power metal--oxideoxide--semiconductor field effectsemiconductor field effect
transistortransistor —— Power MOSFETPower MOSFET
1.4.4 Insulated1.4.4 Insulated--gate bipolar transistorgate bipolar transistor ——IGBTIGBT
FeaturesFeatures
–– Begin to be used in large amount in 1980sBegin to be used in large amount in 1980s
–– GTR is obsolete and GTO is also seldom used today.GTR is obsolete and GTO is also seldom used today.
–– IGBT and power MOSFET are the two major powerIGBT and power MOSFET are the two major power
semiconductor devices nowadays.semiconductor devices nowadays.
ApplicationsApplications
–– IC fabrication technology, fullyIC fabrication technology, fully--controllable, high frequencycontrollable, high frequency
40. PowerElectronics
40
A
G K G GK
N1
P1
N2N2 P2
b)a)
1.4.1 Gate1.4.1 Gate--turnturn--offoff thyristorthyristor——GTOGTO
Major difference from conventionalMajor difference from conventional thyristorthyristor::
The gate and cathode structures are highlyThe gate and cathode structures are highly interdigitatedinterdigitated, with, with
various types of geometric forms being used to layout thevarious types of geometric forms being used to layout the
gates and cathodes.gates and cathodes.
StructureStructure SymbolSymbol
G
K
A
41. PowerElectronics
41
Physics of GTO operationPhysics of GTO operation
The basic operation of GTO is theThe basic operation of GTO is the
same as that of the conventionalsame as that of the conventional
thyristorthyristor..
The principal differences lie in theThe principal differences lie in the
modifications in the structure tomodifications in the structure to
achieve gate turnachieve gate turn--off capability.off capability.
–– LargeLarge αα22
–– αα11++αα22 is just a little larger thanis just a little larger than
the critical value 1.the critical value 1.
–– Short distance from gate toShort distance from gate to
cathode makes it possible tocathode makes it possible to
drive current out of gate.drive current out of gate.
R
NPN
PNP
A
G
S
K
EG
IG
EA
IK
Ic2
Ic1
IA
V1
V2
42. PowerElectronics
42
Characteristics of GTOCharacteristics of GTO
Static characteristicStatic characteristic
–– Identical to conventionalIdentical to conventional thyristorthyristor in the forward directionin the forward direction
–– Rather low reverse breakdown voltage (20Rather low reverse breakdown voltage (20--30V)30V)
Switching characteristicSwitching characteristic
O
t
0 t
iG
iA
IA
90%IA
10%IA
tt
tf
ts
td
tr
t0
t1
t2
t3
t4
t5
t6
43. PowerElectronics
43
Specifications of GTOSpecifications of GTO
Most GTO specifications have the same meaningsMost GTO specifications have the same meanings
as those of conventionalas those of conventional thyristorthyristor..
Specifications different fromSpecifications different from thyristorthyristor’’ss
–– Maximum controllable anode current IMaximum controllable anode current IATOATO
–– Current turnCurrent turn--off gainoff gain ββoffoff
–– TurnTurn--on time ton time tonon
–– TurnTurn--off timeoff time ttoffoff
44. PowerElectronics
44
1.4.2 Giant Transistor1.4.2 Giant Transistor——GTRGTR
GTR is actually the bipolar junction transistor that can handleGTR is actually the bipolar junction transistor that can handle
high voltage and large current.high voltage and large current.
So GTR is also called power BJT, or just BJT.So GTR is also called power BJT, or just BJT.
Basic structureBasic structure SymbolSymbol
b
e
c
45. PowerElectronics
45
Structures of GTR different from itsStructures of GTR different from its
informationinformation--processing counterpartprocessing counterpart
MultipleMultiple--emitter structureemitter structure Darlington configurationDarlington configuration
46. PowerElectronics
46
Physics of GTR operationPhysics of GTR operation
Same as information BJT deviceSame as information BJT device
holes
electrons
Eb
Ec
ib
ic
=βib
ie
=(1+β )ib
48. PowerElectronics
48
Switching characteristics of GTRSwitching characteristics of GTR
TurnTurn--on transienton transient
–– TurnTurn--on delay time ton delay time tdd
–– Rise timeRise time ttrr
–– TurnTurn--on time ton time tonon
TurnTurn--off transientoff transient
–– Storage timeStorage time ttss
–– Falling timeFalling time ttff
–– TurnTurn--off timeoff time ttoffoff
ib Ib
1
Ib
2
Ics
ic
0
0
90%Ib1
10%Ib1
90%Ics
10%Ics
t0 t1 t2 t3 t4 t5 t
t
toff
ts tf
ton
trtd
51. PowerElectronics
51
1.4.3 Power metal1.4.3 Power metal--oxideoxide--semiconductor fieldsemiconductor field
effect transistoreffect transistor——Power MOSFETPower MOSFET
Basic structureBasic structure SymbolSymbol
G
S
D
P channel
A classificationA classification
Field EffectField Effect
TransistorTransistor
(FET)(FET)
MetalMetal--onsideonside--semiconductor FET (MOSFET)semiconductor FET (MOSFET) Power MOSFETPower MOSFET
Junction FET (JFET)Junction FET (JFET) Static induction transistor (SIT)Static induction transistor (SIT)
n channeln channel
p channelp channel
G
S
D
N channel
52. PowerElectronics
52
Structures of power MOSFETStructures of power MOSFET
Also verticalAlso vertical
structurestructure——VMOSVMOS
–– VVMOS, VDMOSVVMOS, VDMOS
Multiple parallelMultiple parallel
cellscells
–– PolygonPolygon--shapedshaped
cellscells A structure of hexagon cellsA structure of hexagon cells
53. PowerElectronics
53
Physics of MOSFET operationPhysics of MOSFET operation
p-n- junction is
reverse-biased
off-state voltage
appears across
n- region
OffOff--statestate
54. PowerElectronics
54
Physics of MOSFET operationPhysics of MOSFET operation
p-n- junction is slightly
reverse biased
positive gate voltage
induces conducting
channel
drain current flows
through n- region and
conducting channel
on resistance = total
resistances of n- region,
conducting
channel,source and drain
contacts, etc.
OnOn--statestate
56. PowerElectronics
56
Switching characteristics of power MOSFETSwitching characteristics of power MOSFET
Rs
RG RF
RL
iD
uGS
up
iD
+UE
iD
O
O
O
up
t
t
t
uGS
uGSP
uT
td(on) tr
td(off) tf
TurnTurn--on transienton transient
–– TurnTurn--on delay time ton delay time td(on)d(on)
–– Rise timeRise time ttrr
TurnTurn--off transientoff transient
–– TurnTurn--off delay time toff delay time td(off)d(off)
–– Falling timeFalling time ttff
57. PowerElectronics
57
Specifications of power MOSFETSpecifications of power MOSFET
DrainDrain--source breakdown voltage Usource breakdown voltage UDSDS
Continuous drain current IContinuous drain current IDD
Peak pulsed drain current IPeak pulsed drain current IDMDM
On (OnOn (On--state) resistance Rstate) resistance RDS(on)DS(on)
InterInter--terminal capacitancesterminal capacitances
–– Short circuit input capacitanceShort circuit input capacitance CCississ== CCGSGS++ CCGDGD
–– Reverse transfer capacitanceReverse transfer capacitance CCrssrss== CCGDGD
–– Short circuit output capacitanceShort circuit output capacitance CCossoss== CCDSDS++ CCGDGD
SOA of power MOSFETSOA of power MOSFET
–– No second breakdownNo second breakdown
59. PowerElectronics
59
Features and applications of power MOSFETFeatures and applications of power MOSFET
VoltageVoltage--driven device, simple drive circuitdriven device, simple drive circuit
MajorityMajority--carrier device, fast switching speed, highcarrier device, fast switching speed, high
operating frequency (could be hundreds of kHz)operating frequency (could be hundreds of kHz)
MajorityMajority--carrier device, better thermal stabilitycarrier device, better thermal stability
OnOn--resistance increases rapidly with rated blockingresistance increases rapidly with rated blocking
voltagevoltage
–– Usually used at voltages less than 500V and power lessUsually used at voltages less than 500V and power less
than 10kWthan 10kW
–– 1000V devices are available, but are useful only at low1000V devices are available, but are useful only at low
power levels(100W)power levels(100W)
Part number is selected on the basis of onPart number is selected on the basis of on--
resistance rather than current ratingresistance rather than current rating
60. PowerElectronics
60
The body diode of power MOSFETThe body diode of power MOSFET
The body diodeThe body diode Equivalent circuitEquivalent circuit
61. PowerElectronics
61
1.4.41.4.4 InsulatedInsulated--gate bipolar transistorgate bipolar transistor
——IGBTIGBT
FeaturesFeatures
•• OnOn--state losses are much smaller than those of a powerstate losses are much smaller than those of a power
MOSFET, and are comparable with those of a GTRMOSFET, and are comparable with those of a GTR
•• Easy to driveEasy to drive ——similar to power MOSFETsimilar to power MOSFET
•• Faster than GTR, but slower than power MOSFETFaster than GTR, but slower than power MOSFET
ApplicationApplication
•• The device of choice in 500The device of choice in 500--1700V applications, at power1700V applications, at power
levels of several kW to several MWlevels of several kW to several MW
Combination of MOSFET and GTRCombination of MOSFET and GTR
GTRGTR: low conduction losses (especially at larger blocking volta: low conduction losses (especially at larger blocking voltages),ges),
longer switching times, currentlonger switching times, current--drivendriven
MOSFETMOSFET: faster switching speed, easy to drive (voltage: faster switching speed, easy to drive (voltage--driven),driven),
larger conduction losses (especially for hilarger conduction losses (especially for higher blocking voltages)gher blocking voltages)
IGBTIGBT
62. PowerElectronics
62
Structure and operation principle of IGBTStructure and operation principle of IGBT
Basic structureBasic structure Also multiple cell structureAlso multiple cell structure
Basic structure similar toBasic structure similar to
power MOSFET, exceptpower MOSFET, except
extra p regionextra p region
OnOn--state: minority carriersstate: minority carriers
are injected into drift region,are injected into drift region,
leading to conductivityleading to conductivity
modulationmodulation
compared with powercompared with power
MOSFET: slower switchingMOSFET: slower switching
times, lower ontimes, lower on--resistance,resistance,
useful at higher voltagesuseful at higher voltages
(up to 1700V)(up to 1700V)
E G
C
N+
N-
a)
P
N+ N+
P
N+ N+
P+
Emitter Gate
Collector
Injecting layer
Buffer layer
Drift regionJ3 J2
J1
63. PowerElectronics
63
Equivalent circuit and circuit symbol of IGBTEquivalent circuit and circuit symbol of IGBT
Equivalent circuitEquivalent circuit Circuit symbolCircuit symbol
G
E
C
+
-
+-
+
-
ID
RN
IC
VJ1
ID
Ron
Drift region
resistance
G
C
E
64. PowerElectronics
64
Static characteristics of IGBTStatic characteristics of IGBT
O
Active region
Cut-off (forward
blocking) region
Saturation region
(On region)
Reverse
blocking region
IC
URM
UFM UCE
UGE(th)
UGE
65. PowerElectronics
65
Switching characteristics of IGBTSwitching characteristics of IGBT
IGBT turn-on is
similar to power
MOSFET turn-on
The major
difference between
IGBT turn-off and
power MOSFET
turn-off:
– There is current
tailing in the IGBT
turn-off due to the
stored charge in
the drift region.
t
t
t
10%
90%
10%
90%
UCE
IC
0
O
0
UGE
UGEM
ICM
UCEM
tfv1 tfv2
toffton
tfi1
tfi2
td(off)
tf
td(on)
tr
UCE(on)
UGEM
UGEM
ICM
ICM
current tail
66. PowerElectronics
66
ParasiticParasitic thyristorthyristor and latchand latch--up in IGBTup in IGBT
Main current pathMain current path pnppnp transistor and the parasitictransistor and the parasitic npnnpn transistortransistor
compose a parasiticcompose a parasitic thyristorthyristor inside IGBT.inside IGBT.
High emitter current tends to latch the parasiticHigh emitter current tends to latch the parasitic thyristorthyristor on.on.
ModernModern IGBTsIGBTs are essentially latchare essentially latch--up proofup proof
Location of equivalent devicesLocation of equivalent devices Complete IGBT equivalent circuitComplete IGBT equivalent circuit
67. PowerElectronics
67
Specifications of IGBTSpecifications of IGBT
CollectorCollector--emitter breakdown voltage Uemitter breakdown voltage UCESCES
Continuous collector current IContinuous collector current ICC
Peak pulsed collector current IPeak pulsed collector current ICMCM
Maximum power dissipation PMaximum power dissipation PCMCM
Other issues:Other issues:
SOA of IGBTSOA of IGBT
–– The IGBT has a rectangular SOA with similar shape to theThe IGBT has a rectangular SOA with similar shape to the
power MOSFET.power MOSFET.
Usually fabricated with an antiUsually fabricated with an anti--parallel fast diodeparallel fast diode
69. PowerElectronics
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1.5 Other new power electronic devices1.5 Other new power electronic devices
Static induction transistorStatic induction transistor ——SITSIT
Static inductionStatic induction thyristorthyristor ——SITHSITH
MOS controlledMOS controlled thyristorthyristor —— MCTMCT
Integrated gateIntegrated gate--commutatedcommutated thyristorthyristor ——IGCTIGCT
Power integrated circuit and power modulePower integrated circuit and power module
70. PowerElectronics
70
Static induction transistorStatic induction transistor——SITSIT
Another name: power junction field effectAnother name: power junction field effect
transistortransistor——power JFETpower JFET
FeaturesFeatures
–– MajorMajor--carrier devicecarrier device
–– Fast switching, comparable to power MOSFETFast switching, comparable to power MOSFET
–– Higher powerHigher power--handling capability than power MOSFEThandling capability than power MOSFET
–– Higher conduction losses than power MOSFETHigher conduction losses than power MOSFET
–– NormallyNormally--on device, not convenient (could be madeon device, not convenient (could be made
normallynormally--off, but with even higher onoff, but with even higher on--state losses)state losses)
71. PowerElectronics
71
Static inductionStatic induction thyristorthyristor——SITHSITH
other namesother names
–– Field controlledField controlled thyristorthyristor——FCTFCT
–– Field controlled diodeField controlled diode
FeaturesFeatures
–– MinorityMinority--carrier device, a JFET structure with an additionalcarrier device, a JFET structure with an additional
injecting layerinjecting layer
–– PowerPower--handling capability similar to GTOhandling capability similar to GTO
–– Faster switching speeds than GTOFaster switching speeds than GTO
–– NormallyNormally--on device, not convenient (could be madeon device, not convenient (could be made
normallynormally--off, but with even higher onoff, but with even higher on--state losses)state losses)
72. PowerElectronics
72
MOS controlledMOS controlled thyristorthyristor——MCTMCT
Essentially a GTO with integrated MOSEssentially a GTO with integrated MOS--drivendriven
gates controlling both turngates controlling both turn--on and turnon and turn--off thatoff that
potentially will significantly simply the design ofpotentially will significantly simply the design of
circuits using GTO.circuits using GTO.
The difficulty is how to design a MCT that can beThe difficulty is how to design a MCT that can be
turned on and turned off equally well.turned on and turned off equally well.
Once believed as the most promising device, butOnce believed as the most promising device, but
still not commercialized in a large scale. The futurestill not commercialized in a large scale. The future
remains uncertain.remains uncertain.
73. PowerElectronics
73
Integrated gateIntegrated gate--commutatedcommutated thyristorthyristor —— IGCTIGCT
The newest member of the power semiconductorThe newest member of the power semiconductor
family, introduced in 1997 by ABBfamily, introduced in 1997 by ABB
Actually the close integration of GTO and the gateActually the close integration of GTO and the gate
drive circuit with multipledrive circuit with multiple MOSFETsMOSFETs in parallelin parallel
providing the gate currentsproviding the gate currents
Short name: GCTShort name: GCT
Conduction drop, gate driver loss, and switchingConduction drop, gate driver loss, and switching
speed are superior to GTOspeed are superior to GTO
Competing with IGBT and other new devices toCompeting with IGBT and other new devices to
replace GTOreplace GTO
74. PowerElectronics
74
Power integrated circuit and power modulePower integrated circuit and power module
Two major challengesTwo major challenges
–– Electrical isolation of highElectrical isolation of high--voltage components from lowvoltage components from low--
voltage componentsvoltage components
–– Thermal managementThermal management——power devices usually at higherpower devices usually at higher
temperatures than lowtemperatures than low--voltage devicesvoltage devices
Integration of
power electronic
devices
Monolithic integration:Monolithic integration:
power integrated circuitpower integrated circuit
Packaging integration:Packaging integration:
power modulepower module
Smart power integrated circuit(Smart
power IC, SPIC, Smart switch)
High voltage integrated circuit (HVIC)
Ordinary power module:just power
devices packaged together
Integrated power electronics
Module(IPEM): power devices, drive
circuit, protection circuit, control circuit
Intelligent power module (IPM):
power devices, drive circuit, protection
circuit
75. PowerElectronics
75
Review of device classificationsReview of device classifications
power electronicpower electronic
devicesdevices
PulsePulse--triggered devices:triggered devices: thyristorthyristor, GTO, GTO
LevelLevel--sensitive (Levelsensitive (Level--triggered) devices:triggered) devices:
GTR,power MOSFET, IGBT, SIT, SITH,GTR,power MOSFET, IGBT, SIT, SITH,
MCT, IGCTMCT, IGCT
power electronicpower electronic
devicesdevices
power electronicpower electronic
devicesdevices
CurrentCurrent--driven (currentdriven (current--controlled) devices:controlled) devices:
thyristor, GTO, GTR
VoltageVoltage--driven (voltagedriven (voltage--controlled) devicescontrolled) devices
(Field(Field--controlled devices):power MOSFET,controlled devices):power MOSFET,
IGBT, SIT, SITH, MCT, IGCTIGBT, SIT, SITH, MCT, IGCT
UniUni--polar devices (Majority carrier devices):polar devices (Majority carrier devices):
SBD, power MOSFET, SITSBD, power MOSFET, SIT
Composite devices: IGBT, SITH, MCTComposite devices: IGBT, SITH, MCT
Bipolar devices (MinorityBipolar devices (Minority carrier devices):carrier devices):
ordinary power diode,ordinary power diode, thyristorthyristor, GTO, GTR,, GTO, GTR,
IGCT, IGBT, SITH, MCTIGCT, IGBT, SITH, MCT
76. PowerElectronics
76
Comparison of the major types of devicesComparison of the major types of devices
PowerPower--handling capabilityhandling capability
77. PowerElectronics
77
Comparison of the major types of devicesComparison of the major types of devices
Maximum allowed current density as a function ofMaximum allowed current density as a function of
the switching frequencythe switching frequency