The document reports on the characterization and simulation of a MOSFET (2SK2992) produced by Toshiba, detailing various model parameters, including transconductance and threshold voltage. It presents simulation results for multiple electrical characteristics, such as transconductance, gate charge, capacitance, and switching time, comparing measured values to simulated data. Additionally, the report covers body diode characteristics and includes detailed circuit simulation results and error analysis.

1. Device Modeling Report
COMPONENTS: MOSFET (Professional)
PART NUMBER: 2SK2992
MANUFACTURER: TOSHIBA
Body Diode (Professional) / ESD Protection Diode
Bee Technologies Inc.
.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

2. MOSFET MODEL PARAMETERS
PSpice model
Model description
parameters
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

3. Transconductance Characteristic
Circuit Simulation Result
10
Measurement
Simulation
TRANSCONDUCTANCE Gfs(s)
1
0.1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
DRIAN CURRENT ID (A)
Comparison table
Gfs(S)
Id(A) Measurement Simulation Error(%)
0.1 0.09704 0.09804 1.03051
0.2 0.22927 0.22727 -0.87232
0.4 0.34854 0.35054 0.57382
1.2 0.56366 0.55787 -1.02722
1.6 0.70985 0.70765 -0.30992
2 1.03093 1.04033 0.91180
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

4. Vgs-Id Characteristic
Circuit Simulation result
2.0A
1.6A
1.2A
0.8A
0.4A
0A
0V 2V 4V 6V 8V 10V
I(Vsense)
V_VGS
Evaluation circuit
Vsense
U1 2SK2992_pro
VDS
10Vdc
VGS
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

5. Comparison Graph
Circuit Simulation Result
2
Measurement
Simulation
1.6
DRAIN CURRENT ID (A)
1.2
0.8
0.4
0
0 2 4 6 8 10
GATE-SOURCE VOLTAGE VGS (V)
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.1 3.4000 3.4298 0.8765
0.2 3.6500 3.6456 -0.1205
0.4 4.0000 3.9700 -0.7500
1.2 4.7000 4.7187 0.3979
1.6 5.0000 5.0006 0.0120
2 5.3000 5.3807 1.5217
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

6. Rds(on) Characteristic
Circuit Simulation result
220mA
198mA
176mA
154mA
132mA
110mA
88mA
66mA
44mA
22mA
0A
0V 0.1V 0.3V 0.5V 0.7V 0.9V
I(Vsense)
V_VDS
Evaluation circuit
Vsense
U1 2SK2992_pro
VDS
VGS
10Vdc
0
Simulation Result
ID=0.5A, VGS=10V Measurement Simulation Error (%)
R DS (on) 2.2  2.2  0.000
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

7. Gate Charge Characteristic
Circuit Simulation result
16V
14V
12V
10V
8V
6V
4V
2V
0V
0 1n 2n 3n 4n 5n 6n 7n 8n 9n 10n
V(W1:3)
Time*1mA
Evaluation circuit
Vsense
U1 2SK2992_pro
I1
D1
Dbreak 1Adc
W1
+
-
I2
TD = 0 W VD
ION = 0A 160Vdc
IOFF = 1mA
0
Simulation Result
VDD=160V,
Measurement Simulation Error (%)
ID=1A
Qgs 0.3600 nC 0.3590 nC -0.2778
Qgd 1.0800 nC 1.0850 nC 0.4630
Qg 3.920 nC 3.9000 nC 0.5100
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

8. Gate Charge Characteristic Reference
VGS-Qg
16
VDD=22V
14
12
10
VGS (V)
8
6
4
2
0
0 1 2 3 4
Qg (nC)
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

9. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Measurement Simulation Error(%)
5 24.000 24.119 0.496
10 19.000 18.911 -0.468
20 13.500 13.514 0.104
50 7.600 7.615 0.197
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

10. Switching Time Characteristic
Circuit Simulation result
12V
11V
10V
9V
8V
7V
6V
5V
4V
3V
2V
1V
0V
-1V
-2V
0.85us 0.95us 1.05us 1.15us 1.25us
V(L3:1)*1 V(L2:2)/10
Time
Evaluation circuit
Vsense RL
3
200
V1 = 0 U1 2SK2992_pro
V2 = 20 R2 L3 2
TD = 1u VD
30nH
200 100Vdc
TR = 10n V1
R1
TF = 10n
200
PW = 10u
PER = 10m
0
Simulation Result
ID=0.5A,
VDD= 100V, Measurement Simulation Error(%)
VGS=0/10V
Td(on) 17.000 ns 17.012 ns 0.0706
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

11. Output Characteristic
Circuit Simulation result 6V 5V
1.0A
4.7V
8.0V
0.9A
10V 4.5V
0.8A
0.7A
4.3V
0.6A
0.5A
0.4A 4V
0.3A
3.75V
0.2A
VGS= 3.5V
0.1A
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(Vsense)
V_VDS
Evaluation circuit
Vsense
U1 2SK2992_pro
VDS
VGS
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

12. BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
5.0A
1.0A
100mA
500mV 1.0V 1.2V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
U1 2SK2992_pro
V1
0Vdc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

13. Comparison Graph
Circuit Simulation Result
10
Measurement
Simulation
DRAIN REVERSE CURRENT IDR (A)
1
0.1
0.5 0.7 0.9 1.1
SOURCE-DRAIN VOLTAGE VSD (V)
Simulation Result
VSD(V)
IDR(A) %Error
Measurement Simulation
0.1 0.7500 0.7469 -0.4133
0.2 0.7800 0.7800 0.0000
0.5 0.8300 0.8320 0.2410
1 0.9200 0.9210 0.1087
1.5 1.0200 1.0132 -0.6667
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

14. Reverse Recovery Characteristic (Body Diode)
Circuit Simulation Result
400mA
200mA
0A
-200mA
-400mA
0.4us 0.8us 1.2us 1.6us 2.0us 2.4us
I(R1)
Time
Evaluation Circuit
R1 50
V1 = -9.3V U1 D2SK2992_PRO
V2 = 10.8V
TD = 100n
TR = 6ns V1
TF = 5.7ns
PW = 1us
PER = 50us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj 196.000 ns 196.120 ns 0.061
trb 108.000 ns 108.500 ns 0.463
trr 304.000 ns 305.200 ns 0.395
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

15. Reverse Recovery Characteristic (Body Diode) Reference
Trj= (196ns)
Trb= (108ns)
Conditions:Ifwd=0.2,lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

16. Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 5V 10V 20V 30V 40V 50V 60V
I(R1)
V_V1
Evaluation Circuit
U1 2SK2992_pro
R1
0.01m
V1 IOPEN
0Vdc 0Adc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

17. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006