SPICE MODEL of 2SK2962 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model parameter)
PART NUMBER: 2SK2962
MANUFACTURER: TOSHIBA
Body Diode (Model parameter) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

3. Transconductance Characteristic
Circuit Simulation Result
2.8
2.4
2
1.6
gfs
1.2
0.8
0.4
Measurement
Simulation
0
0.1 0.3 0.5 0.7 0.9
ID(A)
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
0.1 0.5 0.508 1.600
0.4 0.977 1.010 3.378
0.6 1.2 1.232 2.667
0.8 1.455 1.421 -2.337
1 1.515 1.585 4.620
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

4. Vgs-Id Characteristic
Circuit Simulation result
2.0A
1.6A
1.2A
0.8A
0.4A
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U1
V2
2SK2962
V1 5
6
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

5. Comparison Graph
Circuit Simulation Result
Measurement
Simulation
0.81
ID - Drain Current - A
0.61
0.41
0.21
0.01
0 1 2 3 4 5
VGS - Gate to Source Voltage - V
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.01 1.84 1.821 -1.033
0.02 1.89 1.8723 -0.937
0.05 2.005 1.9786 -1.317
0.1 2.17 2.0967 -3.378
0.2 2.32 2.2642 -2.405
0.4 2.559 2.5015 -2.247
0.6 2.7 2.684 -0.593
0.8 2.825 2.8382 0.467
1 2.944 2.9743 1.029
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

6. Rds(on) Characteristic
Circuit Simulation result
500mA
400mA
300mA
200mA
100mA
0A
0V 100mV 200mV 300mV 400mV 500mV
I(V2)
V_V3
Evaluation circuit
V2
0Vdc
U1
V3
2SK2962 0Vdc
V1
10
0
Simulation Result
ID=0.5A, VGS=10V Measurement Simulation Error (%)
R DS (on) 0.5  0.49  -2
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

7. Gate Charge Characteristic
Circuit Simulation result
10V
8V
6V
4V
2V
0V
0 2.0n 4.0n 6.0n 8.0n
V(W1:3)
Time*1mA
Evaluation circuit
RON = 1.0 U1
ROFF = 1e6
ION = 0
IOFF = 100u
W1
+ I2
2SK2962 D1
-
Dbreak
W 1
I1
I1 = 0
I2 = 1m V1
TD = 0
TR = 10n 80
TF = 10n
PW = 200u
PER = 500u
0
Simulation Result
VDD=80V,ID=1A Measurement Simulation Error (%)
Qgs 0.8 nC 0.806 nC 0.750
Qgd 1.95 nC 1.9507 nC 0.036
Qg 6.35 nC 4.7965 nC -24.465
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.2 50 50.2 0.400
0.5 48 47.8 -0.417
1 45 44.75 -0.556
2 40 40.2 0.500
5 32 32.2 0.625
10 26 25.8 -0.769
20 20 20 0.000
50 14 13.75 -1.786
100 10 10.2 2.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

9. Switching Time Characteristic
Circuit Simulation result
12V
8V
4V
0V
1.95us 2.00us 2.05us 2.10us
V(U1:G) V(U1:D)/5
Time
Evaluation circuit
L1 R2
50nH
U1 100
L2
30nH V1
50
V1 = 0 V2 R4 2SK2962
V2 = 10
TD = 2u 50
TR = 6n
TF = 7n
PW = 10u
PER = 30u
0
Simulation Result
ID=0.5 A, VDD=50V
Measurement Simulation Error(%)
VGS=0/10V
ton 13.000 ns 13.167 ns 1.285
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10. Output Characteristic
Circuit Simulation result
2.0A
1.6A 3.25
1.2A
3
0.8A 2.75
2.5
0.4A
2.25 VGS=2V
V V
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(Vdsense)
V_Vvariable
Evaluation circuit
Vdsense
0Vdc
U1
2SK2962
Vv ariable
Vstep
5
2
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

11. BODY DIODE
Forward Current Characteristic
Circuit Simulation Result
3.0A
1.0A
100mA
40mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
2SK2962
V1
0Vdc
U1
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

12. Comparison Graph
Circuit Simulation Result
1
Measurement
Simulation
Drain reverse current IDR(A)
0.1
0.01
0 0.2 0.4 0.6 0.8 1
Source-Drain voltage VSD(V)
Simulation Result
VSD(V)
Ifwd(A) Measuremen Simulation %Error
0.04 0.66 0.663 0.455
0.05 0.68 0.676 -0.588
0.1 0.715 0.717 0.280
0.2 0.765 0.764 -0.131
0.5 0.84 0.840 0
1 0.91 0.91 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
200mA
0A
-200mA
-400mA
14.88us 15.04us 15.20us 15.36us 15.52us
I(RL)
Time
Evaluation Circuit
RL
50
2SK2962
V1 = -9.25 V1
V2 = 10.76
TD = 0
TR = 10n
TF = 10n
PW = 15u U1
PER = 100u
0
Compare Measurement vs. Simulation
Trr(ns) Measurement Simulation Error (%)
Trj+Trb (ns) 146.4 146.888 0.333
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

14. Reverse Recovery Characteristic Reference
Trj=79.2(ns)
Trb=67.2(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

15. ESD PROTECTION DIODE
Zener Voltage Characteristic
Circuit Simulation Result
10mA
5mA
0A
0V 25V 50V
I(R1)
V_V1
Evaluation Circuit
U2
R1
0.01m
2SK2962 R2
V1
0Vdc 1G
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006