SPICE MODEL of 2SJ509 (Professional+BDP Model) in SPICE PARK
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SPICE MODEL of 2SJ509 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of 2SJ509 (Professional+BDP Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Professional) PART NUMBER: 2SJ509 MANUFACTURER: TOSHIBA Body Diode (Professional) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 2. MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 3. Transconductance Characteristic Circuit Simulation Result 2 1.5 gfs 1 0.5 Measurement Simulation 0 0.01 0.21 0.41 0.61 0.81 - ID(A) Comparison table gfs -Id(A) Error(%) Measurement Simulation 0.01 0.140 0.143 2.143 0.02 0.160 0.167 4.375 0.05 0.290 0.294 1.379 0.1 0.405 0.417 2.963 0.2 0.600 0.606 1.000 0.5 0.900 0.926 2.889 1 1.300 1.333 2.538 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 4. Vgs-Id Characteristic Circuit Simulation result -1.0A -0.5A 0A 0V -2V -4V -6V -8V -10V I(V3) V_V1 Evaluation circuit V3 0Vdc U13 2SJ509 V2 V1 -10 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 5. Comparison Graph Circuit Simulation Result Measurement Simulation 0.81 - ID - Drain Current - A 0.61 0.41 0.21 0.01 0 1 2 3 4 5 6 7 8 9 10 - VGS - Gate to Source Voltage - V Simulation Result -VGS(V) -ID(A) Error (%) Measurement Simulation 0.01 1.609 1.602 -0.435 0.02 1.673 1.661 -0.717 0.05 1.809 1.792 -0.940 0.1 1.957 1.933 -1.226 0.2 2.169 2.136 -1.521 0.5 2.591 2.537 -2.084 1 3.067 2.992 -2.445 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 6. Rds(on) Characteristic Circuit Simulation result -700mA -600mA -500mA -400mA -300mA -200mA -100mA 0A 0V -0.4V -0.8V -1.2V -1.6V -2.0V I(V2) V_VDS Evaluation circuit V2 0Vdc U13 2SJ509 0Vdc VGS VDS -10Vdc 0 Simulation Result ID=-0.5A, VGS=-10V Measurement Simulation Error (%) R DS (on) 1.340 1.340 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 7. Gate Charge Characteristic Circuit Simulation result 20V 16V 12V 8V 4V 0V 0 4n 8n 12n 16n -V(W1:4) Time*1mA Evaluation circuit ION = 0uA IOFF = 1mA W D2 I2 - I1 = 0 + U13 1 I1 Dbreak I2 = 1m W1 2SJ509 TD = 0 TR = 10n V1 TF = 10n PW = 600u PER = 1000u -80 0 Simulation Result VDD=-80V,ID=-1A Measurement Simulation Error (%) ,VGS=-10V Qgs(nC) 1.900 1.908 0.421 Qgd(nC) 2.200 2.202 0.091 Qg 10.400 10.495 0.913 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 8. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.1 650 650 0.000 0.2 620 616 -0.645 0.5 530 535 0.943 1 450 451 0.222 2 350 348 -0.571 5 220 221 0.455 10 140 142 1.429 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 9. Switching Time Characteristic Circuit Simulation result -14V -12V -10V -8V -6V -4V -2V 0V 1.96us 2.00us 2.10us 2.20us V(L1:2) V(L2:1)/5 Time Evaluation circuit L2 R2 100 50nH -50Vdc L1 PER = 2000u V1 PW = 10u U13 TF = 1n 30nH TR = 1n 2SJ509 R1 TD = 2u V2 = 10 V2 50 V1 = 0 0 Simulation Result ID=-0.5A, VDD=-50V Measurement Simulation Error(%) VGS=0/-10V Ton(ns) 32.000 31.890 -0.344 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 10. Output Characteristic Circuit Simulation result -1.0A -0.9A -0.8A -0.7A -0.6A 2.6 -0.5A 2.4 -0.4A -0.3A 2.2 -0.2A VGS=2V -0.1A 0A 0V -5V -10V -15V -20V -25V -30V -35V -40V -45V I(V3) V_V2 Evaluation circuit V3 0Vdc U13 2SJ509 V2 V1 0 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 11. Output Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 12. Forward Current Characteristic Circuit Simulation Result 10A 1.0A 100mA 10mA 1.0mA 0V 0.4V 0.8V 1.2V 1.6V 2.0V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 0Vdc U26 2SJ509 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 13. Comparison Graph Circuit Simulation Result 10 Measurement Simulation 1 Drain reverse current IDR(A) 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 Source-Drain voltage VSD(V) Simulation Result VSD(V) IDR(A) Measuremen Simulation %Error 0.001 0.516 0.509 -1.357 0.002 0.542 0.540 -0.369 0.005 0.570 0.578 1.404 0.01 0.600 0.609 1.500 0.02 0.632 0.639 1.108 0.05 0.676 0.680 0.592 0.1 0.710 0.711 0.141 0.2 0.748 0.746 -0.267 0.5 0.798 0.796 -0.251 1 0.840 0.841 0.119 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 14. Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 0.7us 0.8us 0.9us 1.0us 1.1us 1.2us 1.3us 1.4us 1.5us 1.6us I(R1) Time Evaluation Circuit R1 50 V1 = -9.4v V1 V2 = 10.8v TD = 20n U26 TR = 10ns TF = 23ns D2SJ509_PRO PW = 1us PER = 100us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) Trj(ns) 120.000 120.024 0.020 Trb(ns) 40.000 40.330 0.825 Trr(ns) 160.000 160.354 0.221 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 15. Reverse Recovery Characteristic Reference Trj=120 (ns) Trb=40(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 16. Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(R1) V_V1 Evaluation Circuit R1 0.01m R2 V1 0Vdc 100MEG 2SJ509 U27 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 17. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2006