SPICE MODEL of 2SK1826 (Standard+BDS Model) in SPICE PARK
•
0 likes•277 views
SPICE MODEL of 2SK1826 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
Recommended
More Related Content
What's hot
What's hot (20)
Viewers also liked
Viewers also liked (6)
Similar to SPICE MODEL of 2SK1826 (Standard+BDS Model) in SPICE PARK
Similar to SPICE MODEL of 2SK1826 (Standard+BDS Model) in SPICE PARK (13)
More from Tsuyoshi Horigome
More from Tsuyoshi Horigome (20)
Recently uploaded
Recently uploaded (20)
SPICE MODEL of 2SK1826 (Standard+BDS Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: MOSFET (Model Parameters) PART NUMBER: 2SK1826 MANUFACTURER: TOSHIBA Body Diode (Standard Model) / Source-Gate Diode (DSG) Bee Technologies Inc. . All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 2. MOSFET MODEL PARAMETERS PSpice model Model description parameters LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 3. Transconductance Characteristic Circuit Simulation Result 0.08 Measurement 0.07 Simulation 0.06 TRANSCONDUCTANCE GFS(s) 0.05 0.04 0.03 0.02 0.01 0 0 0.01 0.02 0.03 0.04 0.05 0.06 DRIAN CURRENT ID (A) Comparison table Gfs(S) Id(A) Error(%) Measurement Simulation 0.002 0.0143 0.0147 2.9412 0.005 0.0240 0.0234 -2.6480 0.01 0.0333 0.0330 -0.8910 0.02 0.0470 0.0466 -0.8084 0.05 0.0714 0.0737 3.2862 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 4. Vgs-Id Characteristic Circuit Simulation result 50mA 10mA 1.0mA 100uA 10uA 0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V 7.0V 8.0V 9.0V I(Vsense) V_VGS Evaluation circuit Vsense 2SK1826 VDS 5Vdc VGS 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 5. Comparison Graph Circuit Simulation Result 0.1 Measurement Simulation DRAIN CURRENT ID (A) 0.01 0.001 0.0001 0 1 2 3 GATE-SOURCE VOLTAGE VGS (V) Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation 0.0005 1.5600 1.5760 1.0256 0.001 1.6200 1.6330 0.8025 0.002 1.7200 1.7203 0.0174 0.005 1.8800 1.8818 0.0957 0.01 2.0500 2.0636 0.6634 0.02 2.3000 2.3209 0.9087 0.05 2.8000 2.8312 1.1143 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 6. Rds(on) Characteristic Circuit Simulation result 10mA 8mA 6mA 4mA 2mA 0A 0V 50mV 100mV 150mV 200mV 250mV 300mV 350mV 400mV 450mV I(Vsense) V_VDS Evaluation circuit Vsense 2SK1826 VDS 5Vdc VGS 4Vdc 0 Simulation Result ID=10mA, VGS=4V Measurement Simulation Error (%) R DS (on) 20.0 20.0 0.0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 7. Gate Charge Characteristic Circuit Simulation result 8.0V 7.0V 6.0V 5.0V 4.0V 3.0V 2.0V 1.0V 0V 0 0.2n 0.4n 0.6n 0.8n 1.0n 1.2n 1.4n 1.6n 1.8n 2.0n V(W1:3) Time*1mA Evaluation circuit Vsense I1 D1 Dbreak 50mAdc 2SK1826 W1 + - I2 W VD TD = 0 ION = 0A 40Vdc IOFF = 1mA 0 Simulation Result VDD=40V, ID= 50mA Measurement Simulation Error (%) ,VGS=5V Qgs 0.28 nC 0.279 nC - 0.3571 Qgd 0.36 nC 0.364 nC 1.1111 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 8. Gate Charge Characteristic Reference 9 VDD=40V 8 7 GATE VOLTAGE Vg 6 5 4 3 2 1 0 0 1 2 GATE CHARGE Qg(nc) All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 9. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.100 9.400 9.414 0.148 0.200 8.900 8.852 - 0.542 0.500 7.800 7.699 - 1.290 1.000 6.680 6.664 - 0.234 2.000 5.500 5.531 0.555 5.000 4.100 4.140 0.973 10.000 3.300 3.258 - 1.270 20.000 2.540 2.539 - 0.059 50.000 1.820 1.829 0.495 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 10. Switching Time Characteristic Circuit Simulation result 12V 11V 10V 9V 8V 7V 6V 5V 4V 3V 2V 1V 0V 0.8us 1.0us 1.2us 1.4us 1.5us V(L3:2)*2.5 V(3)*2 Time Evaluation circuit Vsense RL 3 500 V1 = 0 R1 L3 V2 = 8 2 50 30nH TD = 1u 2SK1826 VD 5Vdc TR = 10n V1 R2 TF = 10n 50 PW = 10u PER = 10m 0 Simulation Result ID=10mA, VDD= 5V, Measurement Simulation Error(%) VGS=0/4V Td(on) 110.000 ns 109.785 ns - 0.20 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 11. Output Characteristic Circuit Simulation result 60mA 50mA 4 3.0 40mA 2.7V 30mA 2.4 V 20mA VGS= 2.1V 10mA 1.8 V 0A 1.5V 0V 2V 4V 6V 8V 10V 12V I(Vsense) V_VDS Evaluation circuit Vsense VDS 2SK1826 5Vdc VGS 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 12. BODY DIODE SPICE MODEL Forward Current Characteristic Circuit Simulation Result 100mA 10mA 1.0mA 100uA 10uA 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V I(R1) V_V1 Evaluation Circuit R1 0.01m 2SK1826 V1 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 13. Comparison Graph Circuit Simulation Result 0.1 Measurement Simulation DRAIN REVERSE CURRENT IDR (A) 0.01 0.001 0.0001 0.00001 0.1 0.6 1.1 1.6 SOURCE-DRAINE VOLTAGE VSD (V) Simulation Result VSD(V) IDR(A) %Error Measurement Simulation 0.0001 0.5800 0.5835 0.6034 0.0002 0.6000 0.6031 0.5167 0.0005 0.6300 0.6294 -0.0952 0.001 0.6500 0.6493 -0.1077 0.002 0.6700 0.6696 -0.0597 0.005 0.7000 0.6977 -0.3286 0.01 0.7200 0.7214 0.1944 0.02 0.7500 0.7493 -0.0933 0.05 0.8000 0.8000 0.0000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 14. Reverse Recovery Characteristic (Body Diode) Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 19.88us 19.96us 20.04us 20.12us 20.20us 20.28us I(R1) Time Evaluation Circuit R1 50 V1 = -9.3V V2 = 10.8V TD = 11.66n 2SK1826 TR = 10ns V1 TF = 5.7ns PW = 1us PER = 50us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) trj+trb=trr 61.60 ns 61.01 ns -0.95779 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 15. Reverse Recovery Characteristic (Body Diode) Reference Trj= (25.6ns) Trb= (36.0ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 16. SOURCE-GATE DIODE SPICE MODEL (DSG) Forward Current Characteristic Circuit Simulation Result 50mA 40mA 30mA 20mA 10mA 0A 0V 0.1V 0.2V 0.3V 0.4V 0.5V 0.6V 0.7V 0.8V 0.9V 1.0V I(R1) V_V1 Evaluation Circuit R1 0.01m 2SK1826 V1 0Vdc I1 0Adc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 17. Comparison Graph Circuit Simulation Result 0.05 Measurement Simulation DRAIN REVERSE CURRENT IDR (A) 0.025 0 0 0.5 1 DRAIN-SOURCE VOLTAGE VDS (V) Simulation Result VSG(V) ISG(A) %Error Measurement Simulation 0.00001 0.5800 0.5793 - 0.1207 0.00002 0.6050 0.6071 0.3471 0.00005 0.6350 0.6363 0.2047 0.0001 0.6600 0.6611 0.1667 0.0002 0.6870 0.6857 - 0.1892 0.0005 0.7200 0.7188 - 0.1667 0.001 0.7440 0.7438 - 0.0269 0.002 0.7700 0.7700 0.0000 0.005 0.8050 0.8061 0.1366 0.01 0.8380 0.8370 - 0.1193 0.02 0.8750 0.8741 - 0.1029 0.05 0.9440 0.9442 0.0212 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 18. SOURCE-GATE DIODE SPICE MODEL (DSG) Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2006