This document provides a comprehensive report on the modeling and simulation parameters for the MOSFET part number 2SK1828 manufactured by Toshiba. It includes detailed specifications such as transconductance, threshold voltage, capacitance characteristics, and various circuit simulation results, with comparisons between measurement and simulation data. The report covers multiple characteristics, including output, body diode, and source-gate diode behaviors, providing insights into their performance and reliability.

1. Device Modeling Report
COMPONENTS: MOSFET (Model Parameters)
PART NUMBER: 2SK1828
MANUFACTURER: TOSHIBA
Body Diode (Standard) / Source-Gate Diode (DSG)
Bee Technologies Inc.
.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

2. MOSFET MODEL PARAMETERS
PSpice
model Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

3. Transconductance Characteristic
Circuit Simulation Result
0.1
Measurement
0.09 Simulation
TRANSCONDUCTANCE GFS(s)
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0 0.01 0.02 0.03 0.04 0.05 0.06
DRIAN CURRENT ID (A)
Comparison table
Gfs(S)
Id(A) Error(%)
Measurement Simulation
0.002 0.0154 0.0159 3.17
0.005 0.0250 0.0253 1.01
0.01 0.0370 0.0357 -3.57
0.02 0.0519 0.0505 -2.78
0.05 0.0862 0.0898 4.13
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

4. Vgs-Id Characteristic
Circuit Simulation result
50mA
10mA
1.0mA
100uA
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(Vsense)
V_VGS
Evaluation circuit
Vsense
U1
2SK1828
VDS
3Vdc
VGS
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

5. Comparison Graph
Circuit Simulation Result
0.1
Measurement
Simulation
DRAIN CURRENT ID (A)
0.01
0.001
0 1 2 3
GATE-SOURCE VOLTAGE VGS (V)
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.001 1.07 1.0348 -3.29
0.002 1.1 1.1101 0.92
0.005 1.25 1.2621 0.97
0.01 1.42 1.432 0.85
0.02 1.67 1.67 0.00
0.05 2.14 2.1359 -0.19
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

6. Rds(on) Characteristic
Circuit Simulation result
10mA
8mA
6mA
4mA
2mA
0A
0V 50mV 100mV 150mV 200mV 250mV 300mV 350mV 400mV 450mV
I(Vsense)
V_VDS
Evaluation circuit
Vsense
U1
2SK1828
VDS
VGS
2.5Vdc
0
Simulation Result
ID=10mA,
Measurement Simulation Error (%)
VGS=2.5V
R DS (on) 20.000  19.9982  - 0.09
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

7. Gate Charge Characteristic
Circuit Simulation result
7.0V
6.0V
5.0V
4.0V
3.0V
2.0V
1.0V
0V
0 0.2n 0.4n 0.6n 0.8n 1.0n 1.2n 1.4n 1.6n 1.8n
V(W1:3)
Time*1mA
Evaluation circuit
Vsense
U1
2SK1828 I1
D1
Dbreak 50mAdc
W1
+
-
I2 W VD
TD = 0 ION = 0A 15Vdc
IOFF = 1mA
0
Simulation Result
VDD=15V,
ID= 50mA Measurement Simulation Error (%)
,VGS=3V
Qgs 0.2000 nC 0.2000 nC 0.0000
Qgd 0.1750 nC 0.1747 nC - 0.1714
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

8. Gate Charge Characteristic Reference
6
VDD=15V
5
GATE VOLTAGE Vg
4
3
2
1
0
0 1 2
GATE CHARGE Qg(nc)
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

9. Capacitance Characteristics
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.2 9.1000 9.1410 0.4505
0.5 7.5000 7.4903 - 0.1293
1 6.3000 6.2841 - 0.2524
2 5.2000 5.1938 - 0.1192
5 3.9500 3.9898 1.0076
10 3.2500 3.2574 0.2277
20 2.6800 2.6566 - 0.8731
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10. Switching Time Characteristic
Circuit Simulation result
12V
11V
10V
9V
8V
7V
6V
5V
4V
3V
2V
1V
0V
0.8us 1.0us 1.2us 1.4us 1.5us
V(L3:2)*4 V(3)*3.33
Time
Evaluation circuit
Vsense RL
3
300
V1 = 0
R1 L3
V2 = 5 2 U1
2SK1828
50 30nH
TD = 1u VD
3Vdc
TR = 10n V1
R2
TF = 10n
50
PW = 10u
PER = 10m
0
Simulation Result
ID=10mA,
VDD=3V, Measurement Simulation Error(%)
VGS=0/0.25V
Td(on) 0.140 us 0.140249 us 0.1779
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

11. Output Characteristic
Circuit Simulation result
50mA
2.5V
2.2V
2.0V
40mA
30mA 1.8V
20mA 1.6V
VGS=14V
10mA
1.4 V
1.2V
0A
0V 2V 4V 6V 8V 10V 12V
I(Vsense)
V_VDS
Evaluation circuit
Vsense
U1
2SK1828
VDS
VGS
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

12. BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
100mA
10mA
1.0mA
100uA
10uA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
U1
2SK1828
V1
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

13. Comparison Graph
Circuit Simulation Result
0.1
Measurement
Simulation
DRAIN REVERSE CURRENT IDR (A)
0.01
0.001
0.0001
0.00001
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7
DRAIN-SOURCE VOLTAGE VDS (V)
Simulation Result
VSD(V)
IDR(A) %Error
Measurement Simulation
0.0001 0.5700 0.5687 - 0.2281
0.0002 0.5900 0.5905 0.0847
0.0005 0.6120 0.6128 0.1307
0.001 0.6300 0.6321 0.3333
0.002 0.6500 0.6515 0.2308
0.005 0.6800 0.6776 - 0.3529
0.01 0.7000 0.6983 - 0.2429
0.02 0.7200 0.7205 0.0694
0.05 0.7550 0.7549 - 0.0132
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

14. Reverse Recovery Characteristic (Body Diode)
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
0.88us 0.96us 1.00us 1.08us 1.16us 1.20us 1.28us
I(R1)
Time
Evaluation Circuit
R1 50
V1 = -9.3V
V2 = 10.8V U1
2SK1828
TD = 6.1n
TR = 10ns V1
TF = 5.7ns
PW = 1us
PER = 50us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj 84.8 ns 65.565 ns -22.68
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

15. Reverse Recovery Characteristic (Body Diode) Reference
Trj= (26.4ns)
Trb= (58.4ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

16. SOURCE-GATE DIODE SPICE MODEL (DSG)
Forward Current Characteristic
Circuit Simulation Result
50mA
45mA
40mA
35mA
30mA
25mA
20mA
15mA
10mA
5mA
0A
0V 0.1V 0.2V 0.3V 0.4V 0.5V 0.6V 0.7V 0.8V 0.9V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
U1
2SK1828
V1
0Vdc
I1
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

17. Comparison Graph
Circuit Simulation Result
0.05
Measurement
Simulation
DSG Forward Current ISG (A)
0.025
0
0 0.5 1
Source-Gate Voltage VSG (V)
Simulation Result
VSG(V)
ISG(A) %Error
Measurement Simulation
0.0001 0.5500 0.5485 -0.27
0.0002 0.5850 0.5824 -0.44
0.0005 0.6250 0.6278 0.45
0.001 0.6600 0.6626 0.39
0.002 0.7000 0.6985 -0.21
0.005 0.7500 0.7492 -0.11
0.01 0.7960 0.7925 -0.44
0.02 0.8410 0.8434 0.29
0.05 0.9250 0.9245 -0.05
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

18. SOURCE-GATE DIODE SPICE MODEL (DSG) Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006