This document summarizes the modeling and simulation of a power MOSFET. It includes: 1) Details of the MOSFET components and manufacturer. 2) Descriptions of the MOSFET model used in the PSpice simulation software. 3) Results of simulations validating the MOSFET model against measurements, including transconductance, voltage-current characteristics, capacitances, switching times and reverse recovery characteristics of the body diode. 3) The simulations show good agreement with measurements, validating the accuracy of the MOSFET model.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Professional)
PART NUMBER: 2SJ527
MANUFACTURER: HITACHI
Body Diode (Special) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

3. Transconductance Characteristic
Circuit Simulation Result
5
4
3
gfs
2
1
Measurement
Simulation
0
0 1 2 3 4 5
- ID - Drain Current - A
Comparison table
gfs
-Id(A) Error(%)
Measurement Simulation
0.1 0.620 0.625 0.806
0.2 0.820 0.833 1.585
0.5 1.150 1.151 0.087
1 1.700 1.715 0.882
2 2.500 2.500 0.000
5 4.000 4.098 2.450
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

4. Vgs-Id Characteristic
Circuit Simulation result
-5.0A
-4.0A
-3.0A
-2.0A
-1.0A
0A
0V -1.0V -2.0V -3.0V -4.0V -5.0V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
V2
U9
V1 M2SJ527
10
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

5. Comparison Graph
Circuit Simulation Result
5
Measurement
BeeTech
MoDech
4
- ID - Drain Current - A
3
2
1
0
0.0 1.0 2.0 3.0 4.0 5.0
- VGS - Gate to Source Voltage - V
Simulation Result
-VGS(V)
-ID(A) Error (%)
Measurement Simulation
0.1 2.000 2.006 0.300
0.2 2.140 2.145 0.234
0.5 2.400 2.428 1.167
1 2.750 2.740 -0.364
2 3.200 3.200 0.000
5 4.120 4.112 -0.194
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

6. Rds(on) Characteristic
Circuit Simulation result
-4.0A
-3.0A
-2.0A
-1.0A
0A
0V -0.5V -1.0V -1.5V
I(V2)
V_VDS
Evaluation circuit
V2
0Vdc
U9 VDS
M2SJ527 0Vdc
VGS
-10Vdc
0
Simulation Result
ID=-3A, VGS=-10V Measurement Simulation Error (%)
R DS (on) 0.300  0.300  0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

7. Gate Charge Characteristic
Circuit Simulation result
20V
16V
12V
8V
4V
0V
0 4n 8n 12n 16n 20n
-V(W1:4)
Time*1mA
Evaluation circuit
ION = 0uA
IOFF = 1mA
W I2
- D2
+ Dbreak 5
U12
I1 = 0 W1 M2SJ527
I1
I2 = 1m
TD = 0
TR = 10n V1
TF = 10n
PW = 600u
PER = 1000u 50
0
Simulation Result
VDD=-50V,ID=-5A
Measurement Simulation Error (%)
,VGS=-10V
Qgs(nC) 1.000 1.017 1.700
Qgd(nC) 2.700 2.702 0.074
Qg 7.200 7.190 -0.139
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
5 109.000 110.000 0.917
10 76.000 75.500 -0.658
15 61.000 61.400 0.656
20 50.000 50.600 1.200
25 45.000 44.230 -1.711
30 39.000 39.131 0.336
35 36.000 35.914 -0.239
40 33.500 33.274 -0.675
45 31.100 31.000 -0.322
50 30.500 30.000 -1.639
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

9. Switching Time Characteristic
Circuit Simulation result
-13V
-10V
-5V
0V
1.98us 2.00us 2.02us 2.04us 2.06us 2.08us 2.10us
V(2) V(3)/3
Time
Evaluation circuit
L2 R2
3
50nH 10
L1
2
PER = 2000u
30nH
PW = 10u U10 V1
TF = 7n M2SJ527
TR = 6n 30Vdc
R1
TD = 2u
V2 = 10 V2 50
V1 = 0
0
Simulation Result
ID=-3A, VDD=-30V
Measurement Simulation Error(%)
VGS=0/-10V
Ton(ns) 10.000 10.020 0.200
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10. Output Characteristic
Circuit Simulation result
-5.0A
-10 -4
-6
-8
-4.0A
-3.5
-3.0A
-2.0A
-3
-1.0A
VGS=-2.5V
0A
0V -2V -4V -6V -8V -10V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
V2
U11
V1 M2SJ527
0
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

11. Forward Current Characteristic
Circuit Simulation Result
5.0A
4.0A
3.0A
2.0A
1.0A
0A
0V 0.4V 0.8V 1.2V 1.6V 2.0V
I(R1)
V_V1
Evaluation Circuit
R1 0.01m
V1
0Vdc
U7
M2SJ527
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

12. Comparison Graph
Circuit Simulation Result
10.00
MoDech
BeeTech
Measurement
Drain reverse current IDR(A)
1.00
0.10
0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60
Source-Drain voltage VSD(V)
Simulation Result
VSD(V)
IDR(A) Measurement Simulation %Error
0.1 0.700 0.698 -0.286
0.5 0.810 0.814 0.494
1 0.890 0.896 0.674
2 1.020 1.023 0.294
3 1.150 1.135 -1.304
4 1.250 1.244 -0.480
5 1.330 1.343 0.977
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

13. Reverse Recovery Characteristics (Body Diode)
Circuit Simulation Result
5.0A
4.0A
3.0A
2.0A
1.0A
0A
-1.0A
-2.0A
3.7us 3.8us 3.9us 4.0us 4.1us
I(R1)
Time
Evaluation Circuit
R1 Vsense
V1
VPULSE
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
Trr(ns) 55.000 55.007 0.013
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006