SPICE MODEL of 2SK1828 (Standard+BDS Model) in SPICE PARK

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SPICE MODEL of 2SK1828 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of 2SK1828 (Standard+BDS Model) in SPICE PARK

  1. 1. Device Modeling Report COMPONENTS: MOSFET (Model Parameters) PART NUMBER: 2SK1828 MANUFACTURER: TOSHIBA Body Diode (Standard) / Source-Gate Diode (DSG) Bee Technologies Inc.. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  2. 2. MOSFET MODEL PARAMETERS PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  3. 3. Transconductance CharacteristicCircuit Simulation Result 0.1 Measurement 0.09 Simulation TRANSCONDUCTANCE GFS(s) 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 0 0.01 0.02 0.03 0.04 0.05 0.06 DRIAN CURRENT ID (A)Comparison table Gfs(S) Id(A) Error(%) Measurement Simulation 0.002 0.0154 0.0159 3.17 0.005 0.0250 0.0253 1.01 0.01 0.0370 0.0357 -3.57 0.02 0.0519 0.0505 -2.78 0.05 0.0862 0.0898 4.13 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  4. 4. Vgs-Id CharacteristicCircuit Simulation result 50mA 10mA 1.0mA 100uA 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(Vsense) V_VGSEvaluation circuit Vsense U1 2SK1828 VDS 3Vdc VGS 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  5. 5. Comparison GraphCircuit Simulation Result 0.1 Measurement Simulation DRAIN CURRENT ID (A) 0.01 0.001 0 1 2 3 GATE-SOURCE VOLTAGE VGS (V)Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation 0.001 1.07 1.0348 -3.29 0.002 1.1 1.1101 0.92 0.005 1.25 1.2621 0.97 0.01 1.42 1.432 0.85 0.02 1.67 1.67 0.00 0.05 2.14 2.1359 -0.19 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  6. 6. Rds(on) CharacteristicCircuit Simulation result 10mA 8mA 6mA 4mA 2mA 0A 0V 50mV 100mV 150mV 200mV 250mV 300mV 350mV 400mV 450mV I(Vsense) V_VDSEvaluation circuit Vsense U1 2SK1828 VDS VGS 2.5Vdc 0Simulation Result ID=10mA, Measurement Simulation Error (%) VGS=2.5V R DS (on) 20.000  19.9982  - 0.09 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  7. 7. Gate Charge CharacteristicCircuit Simulation result 7.0V 6.0V 5.0V 4.0V 3.0V 2.0V 1.0V 0V 0 0.2n 0.4n 0.6n 0.8n 1.0n 1.2n 1.4n 1.6n 1.8n V(W1:3) Time*1mAEvaluation circuit Vsense U1 2SK1828 I1 D1 Dbreak 50mAdc W1 + - I2 W VD TD = 0 ION = 0A 15Vdc IOFF = 1mA 0Simulation Result VDD=15V, ID= 50mA Measurement Simulation Error (%) ,VGS=3V Qgs 0.2000 nC 0.2000 nC 0.0000 Qgd 0.1750 nC 0.1747 nC - 0.1714 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  8. 8. Gate Charge Characteristic Reference 6 VDD=15V 5 GATE VOLTAGE Vg 4 3 2 1 0 0 1 2 GATE CHARGE Qg(nc) All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  9. 9. Capacitance Characteristics Measurement SimulationSimulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.2 9.1000 9.1410 0.4505 0.5 7.5000 7.4903 - 0.1293 1 6.3000 6.2841 - 0.2524 2 5.2000 5.1938 - 0.1192 5 3.9500 3.9898 1.0076 10 3.2500 3.2574 0.2277 20 2.6800 2.6566 - 0.8731 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  10. 10. Switching Time CharacteristicCircuit Simulation result 12V 11V 10V 9V 8V 7V 6V 5V 4V 3V 2V 1V 0V 0.8us 1.0us 1.2us 1.4us 1.5us V(L3:2)*4 V(3)*3.33 TimeEvaluation circuit Vsense RL 3 300 V1 = 0 R1 L3 V2 = 5 2 U1 2SK1828 50 30nH TD = 1u VD 3Vdc TR = 10n V1 R2 TF = 10n 50 PW = 10u PER = 10m 0Simulation Result ID=10mA, VDD=3V, Measurement Simulation Error(%) VGS=0/0.25V Td(on) 0.140 us 0.140249 us 0.1779 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  11. 11. Output CharacteristicCircuit Simulation result 50mA 2.5V 2.2V 2.0V 40mA 30mA 1.8V 20mA 1.6V VGS=14V 10mA 1.4 V 1.2V 0A 0V 2V 4V 6V 8V 10V 12V I(Vsense) V_VDSEvaluation circuit Vsense U1 2SK1828 VDS VGS 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  12. 12. BODY DIODE SPICE MODELForward Current CharacteristicCircuit Simulation Result 100mA 10mA 1.0mA 100uA 10uA 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V I(R1) V_V1Evaluation Circuit R1 0.01m U1 2SK1828 V1 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  13. 13. Comparison GraphCircuit Simulation Result 0.1 Measurement Simulation DRAIN REVERSE CURRENT IDR (A) 0.01 0.001 0.0001 0.00001 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 DRAIN-SOURCE VOLTAGE VDS (V)Simulation Result VSD(V) IDR(A) %Error Measurement Simulation 0.0001 0.5700 0.5687 - 0.2281 0.0002 0.5900 0.5905 0.0847 0.0005 0.6120 0.6128 0.1307 0.001 0.6300 0.6321 0.3333 0.002 0.6500 0.6515 0.2308 0.005 0.6800 0.6776 - 0.3529 0.01 0.7000 0.6983 - 0.2429 0.02 0.7200 0.7205 0.0694 0.05 0.7550 0.7549 - 0.0132 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  14. 14. Reverse Recovery Characteristic (Body Diode)Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 0.88us 0.96us 1.00us 1.08us 1.16us 1.20us 1.28us I(R1) TimeEvaluation Circuit R1 50 V1 = -9.3V V2 = 10.8V U1 2SK1828 TD = 6.1n TR = 10ns V1 TF = 5.7ns PW = 1us PER = 50us 0Compare Measurement vs. Simulation Measurement Simulation Error (%) trj 84.8 ns 65.565 ns -22.68 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  15. 15. Reverse Recovery Characteristic (Body Diode) ReferenceTrj= (26.4ns)Trb= (58.4ns)Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  16. 16. SOURCE-GATE DIODE SPICE MODEL (DSG)Forward Current CharacteristicCircuit Simulation Result 50mA 45mA 40mA 35mA 30mA 25mA 20mA 15mA 10mA 5mA 0A 0V 0.1V 0.2V 0.3V 0.4V 0.5V 0.6V 0.7V 0.8V 0.9V I(R1) V_V1Evaluation Circuit R1 0.01m U1 2SK1828 V1 0Vdc I1 0Adc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  17. 17. Comparison GraphCircuit Simulation Result 0.05 Measurement Simulation DSG Forward Current ISG (A) 0.025 0 0 0.5 1 Source-Gate Voltage VSG (V)Simulation Result VSG(V) ISG(A) %Error Measurement Simulation 0.0001 0.5500 0.5485 -0.27 0.0002 0.5850 0.5824 -0.44 0.0005 0.6250 0.6278 0.45 0.001 0.6600 0.6626 0.39 0.002 0.7000 0.6985 -0.21 0.005 0.7500 0.7492 -0.11 0.01 0.7960 0.7925 -0.44 0.02 0.8410 0.8434 0.29 0.05 0.9250 0.9245 -0.05 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  18. 18. SOURCE-GATE DIODE SPICE MODEL (DSG) Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

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