SPICE MODEL of 2SK2233 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: MOSFET (Model Parameters)
PART NUMBER: 2SK2233
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Model Parameters)
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
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2. Circuit Configuration
U1
2S K22 33
All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
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3. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
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4. Transconductance Characteristics
Circuit Simulation result
VDS=10V
Comparison table
gfs (S)
ID (A) %Error
Measurement Simulation
2 7.890 7.911 0.26
5 12.270 12.291 0.17
10 17.050 17.063 0.08
20 23.510 23.482 -0.12
50 35.195 35.217 0.06
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5. Vgs-Id Characteristics
Circuit Simulation result
50A
40A
30A
20A
10A
0A
0V 2V 4V 6V 8V 10V
I(U1:2)
V_VGS
Evaluation circuit
U1
2SK2233
V1
10V
VGS
0
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6. Comparison Graph
Circuit Simulation result
VDS=10V
Comparison table
VGS (V)
ID (A) %Error
Measurement Simulation
1 2.385 2.358 -1.13
2 2.571 2.501 -2.71
5 2.850 2.790 -2.12
10 3.120 3.122 0.08
20 3.545 3.607 1.75
50 4.590 4.619 0.63
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7. Rds (on) Characteristics
Circuit Simulation result
30A
25A
20A
15A
10A
5A
0A
0V 50mV 150mV 250mV 350mV 450mV 550mV
I(U1:2)
V_V1
Evaluation circuit
U1
2SK2233
V1
VGS
10V
0
Test condition: VGS=10(V), ID=25(A)
Parameter Unit Measurement Simulation %Error
RDS(on) mΩ 22.000 22.113 0.51
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8. Output Characteristics
Circuit Simulation result
100A
10
8 6
80A
5
60A
40A 4
20A
VGS = 3V
0A
0V 4V 8V 12V 16V 20V
I(U1:2)
V_V1
Evaluation circuit
U1
2SK2233
V1
VGS
0
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9. Capacitance Characteristics
Simulation result
Measurement
Simulation
Comparison table
Cbd (pF)
VDS (V) %Error
Measurement Simulation
0.1 1750.000 1722.000 -1.60
0.2 1620.000 1647.000 1.67
0.5 1450.000 1472.000 1.52
1 1300.000 1277.800 -1.71
2 1045.000 1048.000 0.29
5 755.000 747.120 -1.04
10 555.000 557.200 0.40
20 405.000 408.000 0.74
50 265.000 265.740 0.28
60 240.000 244.000 1.67
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10. Gate Charge Characteristics
Circuit Simulation result
16V
12V
8V
4V
0V
0 20n 40n 60n 80n 100n
V(W1:3)
Time*1mA
Evaluation circuit
U1 D1
2SK2233 dmod ID
45A
I1 = 0 W1
I2 = 1m +
TF = 10n
TR = 10n -
VDD
TD = 0 IG W 48V
PER = 1 IOFF = 1mA
PW = 10m ION = 0
0
Test condition: VDD=48(V), VGS=10(V), ID=45(A)
Parameter Unit Measurement Simulation %Error
Qgs nC 11.700 11.599 -0.86
Qgd nC 20.000 20.151 0.75
Qg nC 60.000 46.289 -22.85
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11. Switching Time Characteristics
Circuit Simulation result
15V
10V
5V
0V
1.8us 1.9us 2.0us 2.1us 2.2us 2.3us
V(U1:2)/3 V(U1:1)
Time
Evaluation circuit
L2
2 1
U1
2S K22 33 50 nH
L1
R1
30 nH RL
V1 = 0 1 2 1.2
V2 = 20
TD = 2 u V1
TR = 4 n 4.7 R2 VDD
TF = 4n 4.7 30
PW = 5 u
PE R = 50 0u
0
Test condition: VDD=30(V), VGS=0/10(V), ID=25(A), RG=4.7, RL=1.2
Parameter Unit Measurement Simulation %Error
ton ns 30.000 30.058 0.19
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12. Body Diode Forward Current Characteristics
Circuit Simulation result
100A
10A
1.0A
0V -0.4V -0.8V -1.2V -1.6V -2.0V
I(VDS)
V_VDS
Evaluation circuit
U1
2S K22 33
VDS
0
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13. Comparison Graph
Simulation result
Comparison table
-VDS (V)
IDR (A) %Error
Measurement Simulation
1 0.677 0.678 0.15
2 0.720 0.713 -0.99
5 0.780 0.777 -0.44
10 0.850 0.855 0.59
20 0.969 0.987 1.86
50 1.354 1.332 -1.62
100 1.853 1.860 0.38
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14. Reverse Recovery Characteristics
Circuit Simulation result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
0.88us 0.96us 1.04us 1.12us 1.20us 1.28us
I(R1)
Time
Evaluation circuit
R1
50
V1 = -9.4V
V2 = 10.7V
TD = 0ns V1
TR = 10ns
TF = 10ns U1
PW = 1us 2SK2233
PER = 100us
0
Comparison Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trj ns 28.800 28.982 0.63
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15. Reverse Recovery Characteristics Reference
Measurement
trj = 28.8(ns)
trb = 96(ns)
Conditions: Ifwd = lrev = 0.2(A), Rl = 50
Example
Relation between trj and trb
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16. ESD PROTECTION DIODE
Zener Voltage Characteristics
Circuit Simulation result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
-I(VGS)
V_VGS
Evaluation circuit
U1
2S K22 33
R1
1G
VG S
0
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17. Zener Voltage Characteristics Reference
Measurement
IZ = 1(mA)
VZ =23.15(V) at IZ=1.11mA
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