The document provides a comprehensive modeling report for the S2L20U diode from Shindengen Bee Technologies Inc., detailing its parameters and simulation results. Key aspects covered include forward current characteristics, capacitance, and reverse recovery characteristics, with comparisons of measured versus simulated values highlighting accuracy. Copyright information is included, indicating the content is proprietary to Bee Technologies Inc. from 2008.

1. Device Modeling Report
COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ PROFESSIONAL
PART NUMBER: S2L20U
MANUFACTURER: SHINDENGEN
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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2. DIODE MODEL PARAMETERS
PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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3. Forward Current Characteristic
Circuit Simulation Result
10A
1.0A
100mA
0V 0.4V 0.8V 1.2V 1.6V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc U1
S2L20U_P
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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4. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd (V)
Ifwd (A) %Error
Measurement Simulation
0.1 0.650 0.648 -0.31
0.2 0.675 0.677 0.30
0.5 0.725 0.724 -0.14
1 0.775 0.774 -0.13
2 0.850 0.849 -0.12
5 1.025 1.026 0.10
10 1.275 1.274 -0.08
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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5. Capacitance Characteristic
Circuit Simulation Result
200pA
120pA
100pA
80pA
60pA
40pA
20pA
10pA
1.0V 2.0V 4.0V 8.0V 12V 20V 40V 60V 100V 200V
-I(X_U1.D_D1)/(200/1u)
V(N11360)
Evaluation Circuit
V2
0Vdc
V2 = 200 V1
V1 = 0 U1
TD = 0 S2L20U_P
TR = 1us
TF = 10ns
PW = 20us
PER = 10us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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6. Comparison Graph
Circuit Simulation Result
Simulation Result
Cj (pF)
Vrev (V) %Error
Measurement Simulation
1 140.000 139.315 -0.49
2 110.000 110.252 0.23
5 77.500 77.294 -0.27
10 57.500 58.036 0.93
20 42.500 43.241 1.74
50 28.500 29.125 2.19
100 22.500 21.850 -2.89
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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7. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
19.96us 20.00us 20.04us 20.08us 20.12us 20.16us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.4V V2
V2 = 10.7V U1
TD = 15ns S2L20U_P
TR = 5ns
TF = 10ns
PW = 20us
PER = 50us
0
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj ns 12.00 11.86 -1.17
trb ns 22.00 21.93 -0.32
trr ns 34.00 33.79 -0.62
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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8. Reverse Recovery Characteristic Reference
Trj =12.00(ns)
Trb=22.00(ns)
Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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