SPICE MODEL of D25XB80 (Standard Model) in SPICE PARK
•
0 likes•497 views
SPICE MODEL of D25XB80 (Standard Model) in SPICE PARK. English Version is http://www.spicepark.net.Japanese Version is http://www.spicepark.com by Bee Technologies.
Recommended
Recommended
More Related Content
Viewers also liked
Viewers also liked (7)
Similar to SPICE MODEL of D25XB80 (Standard Model) in SPICE PARK
Similar to SPICE MODEL of D25XB80 (Standard Model) in SPICE PARK (20)
More from Tsuyoshi Horigome
More from Tsuyoshi Horigome (20)
Recently uploaded
Recently uploaded (20)
SPICE MODEL of D25XB80 (Standard Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD MODEL PART NUMBER: D25XB80 MANUFACTURER: SHINDENGEN Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
- 2. Circuit Configuration D1 D25XB80 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
- 3. DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
- 4. Forward Current Characteristics Circuit Simulation result 10A 1.0A 100mA 0.5V 0.6V 0.8V 1.0V 1.2V I(D1) V_V1 Evaluation circuit R1 0.01m V1 D1 D25XB80 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
- 5. Comparison Graph Circuit Simulation result 10 Measurement Simulation Forword Current, IF (A) 1 0.1 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 Forward Voltage, VF (V) Comparison table VF (V) IF (A) %Error Measurement Simulation 0.1 0.714 0.717 0.42 0.2 0.742 0.740 -0.27 0.5 0.778 0.774 -0.51 1 0.809 0.805 -0.49 2 0.844 0.845 0.12 5 0.926 0.931 0.54 10 1.050 1.048 -0.19 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
- 6. Junction Capacitance Characteristic Circuit Simulation result 300p 250p 200p 150p 100p 50p 0 100mV 1.0V 10V 100V I(V2)/(600V/1u) V(R) Evaluation circuit V2 R 0 V1 = 0 V1 D1 V2 = 800 D25XB80 TD = 0 TR = 1us TF = 100ns PW = 100us PER = 10m 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6
- 7. Comparison Graph Circuit Simulation result 300 Measurement Simulation 250 Capacitance, C (pF) 200 150 100 50 0 0.1 1 10 100 Reverse Voltage, VR (V) Comparison table C (pF) VR (V) %Error Measurement Simulation 0.1 263.927 265.014 0.41 0.2 250.708 251.000 0.12 0.5 220.989 222.567 0.71 1 194.193 195.000 0.42 2 165.617 165.284 -0.20 5 129.540 128.900 -0.49 10 106.023 105.380 -0.61 20 85.895 85.600 -0.34 50 64.212 64.700 0.76 100 51.030 52.141 2.18 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7
- 8. Reverse Recovery Characteristics Circuit Simulation result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 17us 20us 24us 28us 32us 36us 40us 44us 48us 52us 56us I(R1) Time Evaluation circuit R1 V1 = -9.23V 50 V2 = 10.7V TD = 0ns V1 TR = 10ns D1 TF = 10ns D25XB80 PW = 20us PER = 100us 0 Comparison Measurement vs. Simulation Parameter Unit Measurement Simulation %Error trj us 10.80 10.75 -0.46 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8
- 9. Reverse Recovery Characteristics Reference trj=10.80 (us) trb=4.88(us) Conditions:Ifwd=Irev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9