SPICE MODEL of IDH09G65C5 (Professional Model) in SPICE PARK
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SPICE MODEL of IDH09G65C5 (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of IDH09G65C5 (Professional Model) in SPICE PARK
- 1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: IDH09G65C5 MANUFACTURER: Infineon REMARK: Professional Model
- 2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 2 Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter Model description IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap
- 3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 3 U1 IDH09G65C5 R1 0.01m V1 0Vdc 0 R2 100MEG V _ V 1 0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V I(R1) 0A 2A 4A 6A 8A 10A 12A 14A 16A 18A Forward Current Characteristics Circuit Simulation result Evaluation circuit
- 4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 4 Comparison Graph Circuit Simulation result Comparison table IF (A) VF (V) %Error Measurement Simulation 0.1 0.884 0.883 -0.11 0.2 0.908 0.907 -0.11 0.5 0.948 0.950 0.21 1 1.000 1.000 0.00 2 1.080 1.080 0.00 5 1.280 1.280 0.00 10 1.580 1.580 0.00 18 2.030 2.036 0.30
- 5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 5 V ( R ) 100mV 1.0V 10V 100V 1.0KV I(V2)/(650V/100u) 0 50p 100p 150p 200p 250p 300p 350p 0 R V1 TD = 0 TF = 100ns PW = 100us PER = 10m V1 = 0 TR = 100us V2 = 650 V2 0Vdc R2 100MEG U1 IDH09G65C5 Junction Capacitance Characteristic Circuit Simulation result Evaluation circuit
- 6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 6 Comparison Graph Circuit Simulation result Comparison table VR(V) C (pF) %Error Measurement Simulation 0.1 324.000 320.600 -1.05 0.2 318.000 314.250 -1.18 0.5 300.000 297.400 -0.87 1 275.000 273.600 -0.51 2 240.000 237.600 -1.00 5 180.000 174.700 -2.94 10 132.000 127.900 -3.11 20 94.500 91.230 -3.46 50 63.000 61.140 -2.95 100 48.000 48.900 1.88 200 40.000 41.200 3.00 500 39.000 38.170 -2.13
- 7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 7 V _ V 1 100V 200V 300V 400V 500V 600V I(R1) 1.0nA 10nA 100nA 1.0uA 10uA R4 10G U1 IDH09G65C5 V1 0Vdc R1 100m 0 Reverse Characteristic Circuit Simulation result Evaluation circuit
- 8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 8 Comparison Graph Circuit Simulation result Comparison table IR (A) VR (V) %Error Measurement Simulation 1.00E-09 440.000 418.870 -4.80 1.00E-08 515.000 516.400 0.27 4.20E-07 650.000 649.000 -0.15