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All Rights Reserved Copyright (C) Bee Technologies Inc. 2015
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: SiC Schottky Barrier Diode
PART NUMBER: CVJ10F30
MANUFACTURER: TOSHIBA
REMARK: Professional Model
All Rights Reserved Copyright (C) Bee Technologies Inc. 2015
2
Circuit Configuration
DIODE MODEL PARAMETERS
PSpice
model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2015
3
U1
CVJ10F30R2
100MEG
R1
0.01m
V1
0Vdc
0
V_V1
0V 100mV 200mV 300mV 400mV 500mV 600mV
I(R1)
1.0uA
10uA
100uA
1.0mA
10mA
100mA
1.0A
10A
Forward Current Characteristics
Circuit Simulation result
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2015
4
Comparison Graph
Circuit Simulation result
Comparison table
IF (A)
VF (V)
%Error
Measurement Simulation
0.000001 0.010 0.011 6.00
0.00001 0.044 0.047 6.36
0.0001 0.104 0.102 -1.92
0.001 0.160 0.161 0.63
0.01 0.224 0.222 -0.89
0.1 0.294 0.291 -1.02
0.2 0.320 0.319 -0.31
0.5 0.370 0.371 0.27
1 0.430 0.429 -0.23
All Rights Reserved Copyright (C) Bee Technologies Inc. 2015
5
V(R)
0V 10V 20V 30V
I(V2)/(32V/10u)
1.0p
10p
100p
1.0n
R
V1
TD = 0
TF = 100ns
PW = 100us
PER = 10m
V1 = 0
TR = 10us
V2 = 32
V2
0Vdc
U1
CVJ10F30
0
R1
100MEG
Junction Capacitance Characteristic
Circuit Simulation result
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2015
6
Comparison Graph
Circuit Simulation result
Comparison table
VR(V)
Ct (pF)
%Error
Measurement Simulation
1 71.000 70.000 -1.408
2 53.000 51.800 -2.264
5 30.000 29.000 -3.333
10 19.500 18.900 -3.077
20 15.000 14.700 -2.000
30 13.500 14.000 3.704
All Rights Reserved Copyright (C) Bee Technologies Inc. 2015
7
V_V1
0V 5V 10V 15V 20V 25V 30V
I(R1)
1.0uA
10uA
100uA
U1
CVJ10F30
0
R2
100MEG
V1
0Vdc
R1
100m
Reverse Characteristic
Circuit Simulation result
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2015
8
Comparison Graph
Circuit Simulation result
Comparison table
VR (V)
IR (mA)
%Error
Measurement Simulation
1.000 0.0021 0.0022 2.38
2.000 0.0024 0.0024 -2.48
5.000 0.0029 0.0029 -0.69
10.000 0.0034 0.0034 1.18
20.000 0.0042 0.0041 -1.90
30.000 0.0054 0.0054 -0.74

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SPICE MODEL of CVJ10F30 (Professional Model) in SPICE PARK

  • 1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: CVJ10F30 MANUFACTURER: TOSHIBA REMARK: Professional Model
  • 2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 2 Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter Model description IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap
  • 3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 3 U1 CVJ10F30R2 100MEG R1 0.01m V1 0Vdc 0 V_V1 0V 100mV 200mV 300mV 400mV 500mV 600mV I(R1) 1.0uA 10uA 100uA 1.0mA 10mA 100mA 1.0A 10A Forward Current Characteristics Circuit Simulation result Evaluation circuit
  • 4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 4 Comparison Graph Circuit Simulation result Comparison table IF (A) VF (V) %Error Measurement Simulation 0.000001 0.010 0.011 6.00 0.00001 0.044 0.047 6.36 0.0001 0.104 0.102 -1.92 0.001 0.160 0.161 0.63 0.01 0.224 0.222 -0.89 0.1 0.294 0.291 -1.02 0.2 0.320 0.319 -0.31 0.5 0.370 0.371 0.27 1 0.430 0.429 -0.23
  • 5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 5 V(R) 0V 10V 20V 30V I(V2)/(32V/10u) 1.0p 10p 100p 1.0n R V1 TD = 0 TF = 100ns PW = 100us PER = 10m V1 = 0 TR = 10us V2 = 32 V2 0Vdc U1 CVJ10F30 0 R1 100MEG Junction Capacitance Characteristic Circuit Simulation result Evaluation circuit
  • 6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 6 Comparison Graph Circuit Simulation result Comparison table VR(V) Ct (pF) %Error Measurement Simulation 1 71.000 70.000 -1.408 2 53.000 51.800 -2.264 5 30.000 29.000 -3.333 10 19.500 18.900 -3.077 20 15.000 14.700 -2.000 30 13.500 14.000 3.704
  • 7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 7 V_V1 0V 5V 10V 15V 20V 25V 30V I(R1) 1.0uA 10uA 100uA U1 CVJ10F30 0 R2 100MEG V1 0Vdc R1 100m Reverse Characteristic Circuit Simulation result Evaluation circuit
  • 8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 8 Comparison Graph Circuit Simulation result Comparison table VR (V) IR (mA) %Error Measurement Simulation 1.000 0.0021 0.0022 2.38 2.000 0.0024 0.0024 -2.48 5.000 0.0029 0.0029 -0.69 10.000 0.0034 0.0034 1.18 20.000 0.0042 0.0041 -1.90 30.000 0.0054 0.0054 -0.74