This document provides a device modeling report for a SiC Schottky Barrier Diode with part number CTS521. It includes the diode model parameters, circuit configurations used in simulations, and comparison graphs between the simulation results and measurement data for forward current characteristics, junction capacitance characteristics, and reverse characteristics. The simulations show good agreement with measurements, with most comparison points within 2% error.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: SiC Schottky Barrier Diode
PART NUMBER: CTS521
MANUFACTURER: TOSHIBA
REMARK: Professional Model

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015
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Circuit Configuration
DIODE MODEL PARAMETERS
PSpice
model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

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U1
CTS521
R1
0.01m
V1
0Vdc
0
V_V1
0V 100mV 200mV 300mV 400mV 500mV 600mV
I(R1)
1.0uA
10uA
100uA
1.0mA
10mA
100mA
1.0A
Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

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Comparison Graph
Circuit Simulation result
Comparison table
IF (mA)
VF (V)
%Error
Measurement Simulation
0.001 0.037 0.038 2.70
0.01 0.090 0.091 1.11
0.1 0.152 0.151 -0.66
1 0.212 0.210 -0.94
10 0.278 0.275 -1.08
20 0.300 0.300 0.00
50 0.340 0.341 0.29
100 0.390 0.390 0.00

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V(R)
0V 5V 10V 15V 20V 25V 30V
I(V2)/(30V/1u)
1.0p
10p
100p
U1
CTS521
0
R
V1
TD = 0
TF = 100ns
PW = 100us
PER = 10m
V1 = 0
TR = 1us
V2 = 30
V2
0Vdc
Junction Capacitance Characteristic
Circuit Simulation result
Evaluation circuit

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Comparison Graph
Circuit Simulation result
Comparison table
VR(V)
Ct (pF)
%Error
Measurement Simulation
5 6.700 6.690 -0.149
10 4.800 4.870 1.458
20 3.500 3.510 0.286
30 2.900 2.900 0.000

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V_V1
0V 5V 10V 15V 20V 25V 30V
I(R1)
100nA
1.0uA
10uA
U1
CTS521
V1
0Vdc
R1
100m
0
Reverse Characteristic
Circuit Simulation result
Evaluation circuit

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015
8
Comparison Graph
Circuit Simulation result
Comparison table
VR (V)
IR (uA)
%Error
Measurement Simulation
1.000 0.430 0.433 0.70
2.000 0.470 0.464 -1.28
5.000 0.550 0.543 -1.27
10.000 0.628 0.638 1.59
20.000 0.780 0.778 -0.26
30.000 1.000 1.000 0.00