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All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
1 
Device Modeling Report 
Bee Technologies Inc. 
COMPONENTS: SiC Schottky Barrier Diode 
PART NUMBER: SCS240AE2HR 
MANUFACTURER: ROHM 
REMARK: Professional Model
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
2 
CASE 
(1) (2) (3) 
Circuit Configuration 
DIODE MODEL PARAMETERS 
PSpice 
model 
parameter 
Model description 
IS Saturation Current 
N Emission Coefficient 
RS Series Resistance 
IKF High-injection Knee Current 
CJO Zero-bias Junction Capacitance 
M Junction Grading Coefficient 
VJ Junction Potential 
ISR Recombination Current Saturation Value 
BV Reverse Breakdown Voltage(a positive value) 
IBV Reverse Breakdown Current(a positive value) 
TT Transit Time 
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
3 
R2 
100MEG 
U1 
SCS240AE2HR 
R1 
0.01m 
V1 
0Vdc 
0 
V _ V 1 
0V 0.5V 1.0V 1.5V 2.0V 2.5V 
I(R1) 
1.0mA 
10mA 
100mA 
1.0A 
10A 
100A 
Forward Current Characteristics 
Circuit Simulation result 
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
4 
Comparison Graph Circuit Simulation result 
Comparison table 
IF (A) VF (V) %Error Measurement Simulation 0.001 0.690 0.690 0.00 0.01 0.750 0.749 -0.13 0.1 0.810 0.811 0.12 1 0.890 0.892 0.22 2 0.937 0.934 -0.32 5 1.030 1.026 -0.39 10 1.145 1.150 0.44 20 1.370 1.368 -0.15
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
5 
V ( R ) 
10mV 100mV 1.0V 10V 100V 1.0KV 
I(V2)/(650V/10u) 
10p 
100p 
1.0n 
10n 
0 
R 
V1 
TD = 0 
TF = 100ns 
PW = 100us 
PER = 10m 
V1 = 0 
TR = 10us 
V2 = 650 
V2 
0Vdc 
R2 
100MEG 
U1 
SCS240AE2HR 
Junction Capacitance Characteristic 
Circuit Simulation result 
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
6 
Comparison Graph Circuit Simulation result 
Comparison table 
VR(V) Ct (pF) %Error Measurement Simulation 0.01 1000.000 987.700 -1.23 0.1 980.000 951.100 -2.95 1 720.000 717.500 -0.35 10 302.000 292.400 -3.18 20 215.000 210.830 -1.94 50 147.000 141.560 -3.70 100 110.000 110.000 0.00 200 86.000 89.700 4.30 500 73.000 73.850 1.16
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
7 
V _ V 1 
0V 100V 200V 300V 400V 500V 600V 
I(R1) 
1.0nA 
10nA 
100nA 
1.0uA 
10uA 
U1 
V1 SCS240AE2HR 
0Vdc 
R1 
100m 
0 
R2 
1000G 
Reverse Characteristic 
Circuit Simulation result 
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
8 
Comparison Graph Circuit Simulation result 
Comparison table 
IR (uA) VR (V) %Error Measurement Simulation 0.010 380.000 379.400 -0.158 0.100 470.000 470.800 0.170 1.000 560.000 558.700 -0.232 2.900 600.000 599.200 -0.133

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SPICE MODEL of SCS240AE2HR (Professional Model) in SPICE PARK

  • 1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: SCS240AE2HR MANUFACTURER: ROHM REMARK: Professional Model
  • 2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 2 CASE (1) (2) (3) Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter Model description IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap
  • 3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 3 R2 100MEG U1 SCS240AE2HR R1 0.01m V1 0Vdc 0 V _ V 1 0V 0.5V 1.0V 1.5V 2.0V 2.5V I(R1) 1.0mA 10mA 100mA 1.0A 10A 100A Forward Current Characteristics Circuit Simulation result Evaluation circuit
  • 4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 4 Comparison Graph Circuit Simulation result Comparison table IF (A) VF (V) %Error Measurement Simulation 0.001 0.690 0.690 0.00 0.01 0.750 0.749 -0.13 0.1 0.810 0.811 0.12 1 0.890 0.892 0.22 2 0.937 0.934 -0.32 5 1.030 1.026 -0.39 10 1.145 1.150 0.44 20 1.370 1.368 -0.15
  • 5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 5 V ( R ) 10mV 100mV 1.0V 10V 100V 1.0KV I(V2)/(650V/10u) 10p 100p 1.0n 10n 0 R V1 TD = 0 TF = 100ns PW = 100us PER = 10m V1 = 0 TR = 10us V2 = 650 V2 0Vdc R2 100MEG U1 SCS240AE2HR Junction Capacitance Characteristic Circuit Simulation result Evaluation circuit
  • 6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 6 Comparison Graph Circuit Simulation result Comparison table VR(V) Ct (pF) %Error Measurement Simulation 0.01 1000.000 987.700 -1.23 0.1 980.000 951.100 -2.95 1 720.000 717.500 -0.35 10 302.000 292.400 -3.18 20 215.000 210.830 -1.94 50 147.000 141.560 -3.70 100 110.000 110.000 0.00 200 86.000 89.700 4.30 500 73.000 73.850 1.16
  • 7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 7 V _ V 1 0V 100V 200V 300V 400V 500V 600V I(R1) 1.0nA 10nA 100nA 1.0uA 10uA U1 V1 SCS240AE2HR 0Vdc R1 100m 0 R2 1000G Reverse Characteristic Circuit Simulation result Evaluation circuit
  • 8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 8 Comparison Graph Circuit Simulation result Comparison table IR (uA) VR (V) %Error Measurement Simulation 0.010 380.000 379.400 -0.158 0.100 470.000 470.800 0.170 1.000 560.000 558.700 -0.232 2.900 600.000 599.200 -0.133