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All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
1 
Device Modeling Report 
Bee Technologies Inc. 
COMPONENTS: SiC Schottky Barrier Diode 
PART NUMBER: SCS210AGHR 
MANUFACTURER: ROHM 
REMARK: Professional Model
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
2 
(2) (3) 
(1) 
Circuit Configuration 
DIODE MODEL PARAMETERS 
PSpice 
model 
parameter 
Model description 
IS Saturation Current 
N Emission Coefficient 
RS Series Resistance 
IKF High-injection Knee Current 
CJO Zero-bias Junction Capacitance 
M Junction Grading Coefficient 
VJ Junction Potential 
ISR Recombination Current Saturation Value 
BV Reverse Breakdown Voltage(a positive value) 
IBV Reverse Breakdown Current(a positive value) 
TT Transit Time 
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
3 
U1 
SCS210AGHR 
R1 
0.01m 
V1 
0Vdc 
0 
R2 
100MEG 
V _ V 1 
0V 0.5V 1.0V 1.5V 2.0V 2.5V 
I(R1) 
1.0mA 
10mA 
100mA 
1.0A 
10A 
100A 
Forward Current Characteristics 
Circuit Simulation result 
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
4 
Comparison Graph Circuit Simulation result 
Comparison table 
IF (A) VF (V) %Error Measurement Simulation 0.001 0.705 0.711 0.85 0.01 0.768 0.771 0.39 0.1 0.835 0.834 -0.12 1 0.935 0.931 -0.43 2 1.000 0.991 -0.90 5 1.140 1.139 -0.09 10 1.360 1.365 0.37 20 1.800 1.798 -0.11
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
5 
V ( R ) 
10mV 100mV 1.0V 10V 100V 1.0KV 
I(V2)/(650V/10u) 
10p 
100p 
1.0n 
0 
R 
V1 
TD = 0 
TF = 100ns 
PW = 100us 
PER = 10m 
V1 = 0 
TR = 10us 
V2 = 650 
V2 
0Vdc 
R2 
100MEG 
U1 
SCS210AGHR 
Junction Capacitance Characteristic 
Circuit Simulation result 
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
6 
Comparison Graph Circuit Simulation result 
Comparison table 
VR(V) CT (pF) %Error Measurement Simulation 0.01 500.000 496.900 -0.620 0.1 490.000 482.100 -1.612 1 380.000 379.000 -0.263 10 157.000 151.700 -3.376 20 110.000 106.400 -3.273 50 72.000 70.000 -2.778 100 55.000 54.400 -1.091 200 44.000 45.400 3.182 500 38.000 39.010 2.658
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
7 
V _ V 1 
0V 100V 200V 300V 400V 500V 600V 
I(R1) 
1.0nA 
10nA 
100nA 
1.0uA 
10uA 
100uA 
V1 
0Vdc 
R1 
100m 
0 
R2 
100G 
U1 
SCS210AGHR 
Reverse Characteristic 
Circuit Simulation result 
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
8 
Comparison Graph Circuit Simulation result 
Comparison table 
IR (uA) VR (V) %Error Measurement Simulation 0.001 338.00 324.80 -3.91 0.01 420.00 419.00 -0.24 0.1 500.00 502.10 0.42 1.5 600.00 598.40 -0.27

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SiC Schottky Barrier Diode Modeling Report

  • 1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: SCS210AGHR MANUFACTURER: ROHM REMARK: Professional Model
  • 2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 2 (2) (3) (1) Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter Model description IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap
  • 3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 3 U1 SCS210AGHR R1 0.01m V1 0Vdc 0 R2 100MEG V _ V 1 0V 0.5V 1.0V 1.5V 2.0V 2.5V I(R1) 1.0mA 10mA 100mA 1.0A 10A 100A Forward Current Characteristics Circuit Simulation result Evaluation circuit
  • 4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 4 Comparison Graph Circuit Simulation result Comparison table IF (A) VF (V) %Error Measurement Simulation 0.001 0.705 0.711 0.85 0.01 0.768 0.771 0.39 0.1 0.835 0.834 -0.12 1 0.935 0.931 -0.43 2 1.000 0.991 -0.90 5 1.140 1.139 -0.09 10 1.360 1.365 0.37 20 1.800 1.798 -0.11
  • 5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 5 V ( R ) 10mV 100mV 1.0V 10V 100V 1.0KV I(V2)/(650V/10u) 10p 100p 1.0n 0 R V1 TD = 0 TF = 100ns PW = 100us PER = 10m V1 = 0 TR = 10us V2 = 650 V2 0Vdc R2 100MEG U1 SCS210AGHR Junction Capacitance Characteristic Circuit Simulation result Evaluation circuit
  • 6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 6 Comparison Graph Circuit Simulation result Comparison table VR(V) CT (pF) %Error Measurement Simulation 0.01 500.000 496.900 -0.620 0.1 490.000 482.100 -1.612 1 380.000 379.000 -0.263 10 157.000 151.700 -3.376 20 110.000 106.400 -3.273 50 72.000 70.000 -2.778 100 55.000 54.400 -1.091 200 44.000 45.400 3.182 500 38.000 39.010 2.658
  • 7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 7 V _ V 1 0V 100V 200V 300V 400V 500V 600V I(R1) 1.0nA 10nA 100nA 1.0uA 10uA 100uA V1 0Vdc R1 100m 0 R2 100G U1 SCS210AGHR Reverse Characteristic Circuit Simulation result Evaluation circuit
  • 8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 8 Comparison Graph Circuit Simulation result Comparison table IR (uA) VR (V) %Error Measurement Simulation 0.001 338.00 324.80 -3.91 0.01 420.00 419.00 -0.24 0.1 500.00 502.10 0.42 1.5 600.00 598.40 -0.27