This document provides a device modeling report for a SiC Schottky Barrier Diode with part number SCS220KE2HR. It includes the diode model parameters, circuit simulations of the forward and reverse current characteristics and junction capacitance, as well as comparison tables showing good agreement between measurement and simulation results. Evaluation circuits are provided and comparison graphs show the forward characteristic, junction capacitance characteristic, and reverse characteristic.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: SiC Schottky Barrier Diode
PART NUMBER: SCS220KE2HR
MANUFACTURER: ROHM
REMARK: Professional Model

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
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CASE
(1) (2) (3)
Circuit Configuration
DIODE MODEL PARAMETERS
PSpice
model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
3
R2
100MEG
U1
SCS220KE2HR
R1
0.01m
V1
0Vdc
0
V _ V 1
0V 0.5V 1.0V 1.5V 2.0V 2.5V
I(R1)
1.0mA
10mA
100mA
1.0A
10A
100A
Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

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Comparison Graph Circuit Simulation result
Comparison table
IF (A) VF (V) %Error Measurement Simulation 0.001 0.747 0.745 -0.27 0.01 0.806 0.805 -0.12 0.1 0.870 0.868 -0.23 1 0.970 0.964 -0.62 2 1.020 1.022 0.20 5 1.150 1.167 1.48 10 1.400 1.386 -1.00 20 1.800 1.802 0.11

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V ( R )
10mV 100mV 1.0V 10V 100V 1.0KV
I(V2)/(1200V/10u)
10p
100p
1.0n
0
R
V1
TD = 0
TF = 100ns
PW = 100us
PER = 10m
V1 = 0
TR = 10us
V2 = 1200
V2
0Vdc
R2
100MEG
U1
SCS220KE2HR
Junction Capacitance Characteristic
Circuit Simulation result
Evaluation circuit

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Comparison Graph Circuit Simulation result
Comparison table
VR(V) Ct (pF) %Error Measurement Simulation 0.01 710.000 702.300 -1.08 0.1 700.000 684.000 -2.29 1 530.000 532.100 0.40 10 235.000 223.800 -4.77 20 168.000 160.100 -4.70 50 110.000 104.800 -4.73 100 80.000 79.000 -1.25 200 59.500 62.300 4.71 500 47.000 49.120 4.51 1000 42.000 43.380 3.29

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V _ V 1
0V 0.5KV 1.0KV 1.2KV
I(R1)
1.0nA
10nA
100nA
1.0uA
10uA
100uA
U1
V1 SCS220KE2HR
0Vdc
R1
100m
0
R2
1000G
Reverse Characteristic
Circuit Simulation result
Evaluation circuit

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Comparison Graph Circuit Simulation result
Comparison table
IR (uA) VR (V) %Error Measurement Simulation 0.001 90.000 100.244 11.38 0.01 530.000 438.400 -17.28 0.1 880.000 763.300 -13.26 1 1085.000 1074.000 -1.01 6 1200.000 1315.000 9.58