SPICE MODEL of TRS24N65D (Professional Model) in SPICE PARK

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SPICE MODEL of TRS24N65D (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

Technology

All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: SiC Schottky Barrier Diode
PART NUMBER: TRS24N65D
MANUFACTURER: TOSHIBA
REMARK: Professional Model

All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
2
Circuit Configuration
DIODE MODEL PARAMETERS
PSpice
model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
3
R2
100MEG
U1
TRS24N65D
R1
0.01m
V1
0Vdc
0
V _ V 1
0V 0.5V 1.0V 1.5V 2.0V
I(R1)
0A
1A
2A
3A
4A
5A
6A
7A
8A
9A
10A
11A
12A
Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
4
Comparison Graph Circuit Simulation result
Comparison table
IF (A) VF (V) %Error Measurement Simulation 0.5 0.960 0.948 -1.25 1 0.990 0.988 -0.20 2 1.044 1.050 0.57 5 1.200 1.207 0.58 10 1.450 1.446 -0.28 12 1.540 1.540 0.00

All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
5
V ( R )
100mV 1.0V 10V 100V 1.0KV
I(V2)/(650V/10u)
10p
100p
1.0n
0
R
V1
TD = 0
TF = 100ns
PW = 100us
PER = 10m
V1 = 0
TR = 10us
V2 = 650
V2
0Vdc
R2
100MEG
U1
TRS24N65D
Junction Capacitance Characteristic
Circuit Simulation result
Evaluation circuit

All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
6
Comparison Graph Circuit Simulation result
Comparison table
VR (V) Cj (pF) %Error Measurement Simulation 0.1 670.00 651.00 -2.84 1 540.00 543.30 0.61 2 460.00 465.80 1.26 5 358.00 340.00 -5.03 10 263.00 250.50 -4.75 20 190.00 180.70 -4.89 50 125.00 121.10 -3.12 100 91.00 94.90 4.29 200 75.30 78.90 4.78 500 68.00 67.30 -1.03

All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
7
V _ V 1
100V 200V 300V 400V 500V 600V
I(R1)
1.0nA
10nA
100nA
1.0uA
10uA
U1
V1 TRS24N65D
0Vdc
R1
100m
0
R2
1000G
Reverse Characteristic
Circuit Simulation result
Evaluation circuit

All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
8
Comparison Graph Circuit Simulation result
Comparison table
IR (nA) VR (V) %Error Measurement Simulation 10 477.00 470.59 -1.34 100 580.00 579.20 -0.14 480 650.00 649.00 -0.15

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Conversational agents, or chatbots, are increasingly used to access all sorts of services using natural language. While open-domain chatbots - like ChatGPT - can converse on any topic, task-oriented chatbots - the focus of this paper - are designed for specific tasks, like booking a flight, obtaining customer support, or setting an appointment. Like any other software, task-oriented chatbots need to be properly tested, usually by defining and executing test scenarios (i.e., sequences of user-chatbot interactions). However, there is currently a lack of methods to quantify the completeness and strength of such test scenarios, which can lead to low-quality tests, and hence to buggy chatbots. To fill this gap, we propose adapting mutation testing (MuT) for task-oriented chatbots. To this end, we introduce a set of mutation operators that emulate faults in chatbot designs, an architecture that enables MuT on chatbots built using heterogeneous technologies, and a practical realisation as an Eclipse plugin. Moreover, we evaluate the applicability, effectiveness and efficiency of our approach on open-source chatbots, with promising results.

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Essentials of Automations: Exploring Attributes & Automation Parameters

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Mutation Testing for Task-Oriented Chatbots

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SPICE MODEL of TRS24N65D (Professional Model) in SPICE PARK

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: TRS24N65D MANUFACTURER: TOSHIBA REMARK: Professional Model

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 2 Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter Model description IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 3 R2 100MEG U1 TRS24N65D R1 0.01m V1 0Vdc 0 V _ V 1 0V 0.5V 1.0V 1.5V 2.0V I(R1) 0A 1A 2A 3A 4A 5A 6A 7A 8A 9A 10A 11A 12A Forward Current Characteristics Circuit Simulation result Evaluation circuit

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 4 Comparison Graph Circuit Simulation result Comparison table IF (A) VF (V) %Error Measurement Simulation 0.5 0.960 0.948 -1.25 1 0.990 0.988 -0.20 2 1.044 1.050 0.57 5 1.200 1.207 0.58 10 1.450 1.446 -0.28 12 1.540 1.540 0.00

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 5 V ( R ) 100mV 1.0V 10V 100V 1.0KV I(V2)/(650V/10u) 10p 100p 1.0n 0 R V1 TD = 0 TF = 100ns PW = 100us PER = 10m V1 = 0 TR = 10us V2 = 650 V2 0Vdc R2 100MEG U1 TRS24N65D Junction Capacitance Characteristic Circuit Simulation result Evaluation circuit

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 6 Comparison Graph Circuit Simulation result Comparison table VR (V) Cj (pF) %Error Measurement Simulation 0.1 670.00 651.00 -2.84 1 540.00 543.30 0.61 2 460.00 465.80 1.26 5 358.00 340.00 -5.03 10 263.00 250.50 -4.75 20 190.00 180.70 -4.89 50 125.00 121.10 -3.12 100 91.00 94.90 4.29 200 75.30 78.90 4.78 500 68.00 67.30 -1.03

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 7 V _ V 1 100V 200V 300V 400V 500V 600V I(R1) 1.0nA 10nA 100nA 1.0uA 10uA U1 V1 TRS24N65D 0Vdc R1 100m 0 R2 1000G Reverse Characteristic Circuit Simulation result Evaluation circuit

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 8 Comparison Graph Circuit Simulation result Comparison table IR (nA) VR (V) %Error Measurement Simulation 10 477.00 470.59 -1.34 100 580.00 579.20 -0.14 480 650.00 649.00 -0.15

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