SPICE MODEL of TRS20J120C (Professional Model) in SPICE PARK

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SPICE MODEL of TRS20J120C (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

Technology

All Rights Reserved Copyright (C) Bee Technologies Inc. 2015
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: SiC Schottky Barrier Diode
PART NUMBER: TRS20J120C
MANUFACTURER: TOSHIBA
REMARK: Professional Model

All Rights Reserved Copyright (C) Bee Technologies Inc. 2015
2
Circuit Configuration
DIODE MODEL PARAMETERS
PSpice
model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

All Rights Reserved Copyright (C) Bee Technologies Inc. 2015
3
U1
TRS20J120C
R2
100MEG
R1
0.01m
V1
0Vdc
0
V_V1
0V 1.0V 2.0V
I(R1)
0A
5A
10A
15A
20A
Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

All Rights Reserved Copyright (C) Bee Technologies Inc. 2015
4
Comparison Graph
Circuit Simulation result
Comparison table
IF (A)
VF (V)
%Error
Measurement Simulation
1 0.960 0.954 -0.63
2 0.980 0.984 0.41
5 1.040 1.043 0.29
10 1.122 1.121 -0.09
20 1.260 1.259 -0.08

All Rights Reserved Copyright (C) Bee Technologies Inc. 2015
5
V(R)
100mV 1.0V 10V 100V 1.0KV
I(V2)/(1200V/10u)
10p
100p
1.0n
10n
R
V1
TD = 0
TF = 100ns
PW = 100us
PER = 10m
V1 = 0
TR = 10us
V2 = 1200
V2
0Vdc
U1
TRS20J120C
R2
100MEG
0
Junction Capacitance Characteristic
Circuit Simulation result
Evaluation circuit

All Rights Reserved Copyright (C) Bee Technologies Inc. 2015
6
Comparison Graph
Circuit Simulation result
Comparison table
VR(V)
Cj (pF)
%Error
Measurement Simulation
0.1 2000 1985 -0.75
1 1700 1647 -3.12
2 1400 1407 0.50
5 1020 1016 -0.39
10 770 736 -4.42
20 530 513 -3.21
50 330 317 -3.94
100 230 226 -1.74
200 170 167 -1.76
500 120 125 4.17
1000 103 106.4 3.30

All Rights Reserved Copyright (C) Bee Technologies Inc. 2015
7
V_V1
0.2KV 0.4KV 0.6KV 0.8KV 1.0KV 1.2KV
I(R1)
1.0nA
10nA
100nA
1.0uA
10uA
U1
TRS20J120C
0
R2
1000G
V1
0Vdc
R1
100m
Reverse Characteristic
Circuit Simulation result
Evaluation circuit

All Rights Reserved Copyright (C) Bee Technologies Inc. 2015
8
Comparison Graph
Circuit Simulation result
Comparison table
IR (nA)
VR (V)
%Error
Measurement Simulation
10 200.000 198.000 -1.00
1000 1110.000 1117.000 0.63

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SPICE MODEL of TRS20J120C (Professional Model) in SPICE PARK

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: TRS20J120C MANUFACTURER: TOSHIBA REMARK: Professional Model

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 2 Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter Model description IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 3 U1 TRS20J120C R2 100MEG R1 0.01m V1 0Vdc 0 V_V1 0V 1.0V 2.0V I(R1) 0A 5A 10A 15A 20A Forward Current Characteristics Circuit Simulation result Evaluation circuit

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 4 Comparison Graph Circuit Simulation result Comparison table IF (A) VF (V) %Error Measurement Simulation 1 0.960 0.954 -0.63 2 0.980 0.984 0.41 5 1.040 1.043 0.29 10 1.122 1.121 -0.09 20 1.260 1.259 -0.08

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 5 V(R) 100mV 1.0V 10V 100V 1.0KV I(V2)/(1200V/10u) 10p 100p 1.0n 10n R V1 TD = 0 TF = 100ns PW = 100us PER = 10m V1 = 0 TR = 10us V2 = 1200 V2 0Vdc U1 TRS20J120C R2 100MEG 0 Junction Capacitance Characteristic Circuit Simulation result Evaluation circuit

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 6 Comparison Graph Circuit Simulation result Comparison table VR(V) Cj (pF) %Error Measurement Simulation 0.1 2000 1985 -0.75 1 1700 1647 -3.12 2 1400 1407 0.50 5 1020 1016 -0.39 10 770 736 -4.42 20 530 513 -3.21 50 330 317 -3.94 100 230 226 -1.74 200 170 167 -1.76 500 120 125 4.17 1000 103 106.4 3.30

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 7 V_V1 0.2KV 0.4KV 0.6KV 0.8KV 1.0KV 1.2KV I(R1) 1.0nA 10nA 100nA 1.0uA 10uA U1 TRS20J120C 0 R2 1000G V1 0Vdc R1 100m Reverse Characteristic Circuit Simulation result Evaluation circuit

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 8 Comparison Graph Circuit Simulation result Comparison table IR (nA) VR (V) %Error Measurement Simulation 10 200.000 198.000 -1.00 1000 1110.000 1117.000 0.63

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