SPICE MODEL of SCS215KG (Professional Model) in SPICE PARK

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SPICE MODEL of SCS215KG (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

Technology Education

All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: SiC Schottky Barrier Diode
PART NUMBER: SCS215KG
MANUFACTURER: ROHM
REAMARK: POFESSIONAL MODEL

All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
2
Circuit Configuration
DIODE MODEL PARAMETERS
PSpice
model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
3
R1
0.01m
V1
0Vdc
0
R2
1MEG
U1
SCS215KG_P
V_V1
0V 0.5V 1.0V 1.5V 2.0V 2.5V
I(R1)
1.0mA
10mA
100mA
1.0A
10A
100A
Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
4
Comparison Graph
Circuit Simulation result
Comparison table
IF (A)
VF (V)
%Error
Measurement Simulation
0.001 0.740 0.735 -0.68
0.01 0.780 0.794 1.79
0.1 0.850 0.857 0.82
1 0.950 0.942 -0.84
2 1.000 0.988 -1.20
5 1.100 1.096 -0.36
10 1.250 1.254 0.32
20 1.550 1.551 0.06
50 2.400 2.400 0.00

All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
5
0
V1
TD = 0
TF = 500ns
PW = 100us
PER = 500us
V1 = 0
TR = 100us
V2 = 1200
V2
0Vdc
U1
SCS215KG_PR1
100MEG
V(N16650)
10mV 100mV 1.0V 10V 100V 1.0KV
I(V2)/(1200V/100us)
10p
100p
1.0n
10n
Junction Capacitance Characteristic
Circuit Simulation result
Evaluation circuit

All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
6
Comparison Graph
Circuit Simulation result
Comparison table
VR (V)
CT (pF)
%Error
Measurement Simulation
0.01 1100.000 1079.000 -1.91
0.1 1050.000 1045.000 -0.48
1 800.00 794.00 -0.75
10 330.00 325.00 -1.52
20 238.00 232.00 -2.52
50 155.00 151.00 -2.58
100 110.00 114.00 3.64
200 87.00 90.30 3.79
500 69.00 71.20 3.19
1000 63.00 62.75 -0.40

All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
7
V1
0Vdc
R1
100m
0
R2
100MEG
U1
SCS215KG_P
V_V1
0V 0.50KV 1.00KV 1.24KV
I(R1)
1.0nA
10nA
100nA
1.0uA
10uA
100uA
1.0mA
Reverse Characteristic
Circuit Simulation result
Evaluation circuit

All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
8
Comparison Graph
Circuit Simulation result
Comparison table
IR (uA)
VR (V)
%Error
Measurement Simulation
0.05 750.0 779.1 3.88
0.1 850.0 842.5 -0.88
0.2 920.0 904.3 -1.71
0.5 1005.0 985.0 -1.99
1 1060.0 1045.0 -1.42
2 1120.0 1106.0 -1.25
5 1170.0 1185.0 1.28
9 1200.0 1237.0 3.08

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Have you ever been confused by the myriad of choices offered by AWS for hosting a website or an API? Lambda, Elastic Beanstalk, Lightsail, Amplify, S3 (and more!) can each host websites + APIs. But which one should we choose? Which one is cheapest? Which one is fastest? Which one will scale to meet our needs? Join me in this session as we dive into each AWS hosting service to determine which one is best for your scenario and explain why!

Main news related to the CCS TSI 2023 (2023/1695)

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An English 🇬🇧 translation of a presentation to the speech I gave about the main changes brought by CCS TSI 2023 at the biggest Czech conference on Communications and signalling systems on Railways, which was held in Clarion Hotel Olomouc from 7th to 9th November 2023 (konferenceszt.cz). Attended by around 500 participants and 200 on-line followers. The original Czech 🇨🇿 version of the presentation can be found here: https://www.slideshare.net/slideshow/hlavni-novinky-souvisejici-s-ccs-tsi-2023-2023-1695/269688092 . The videorecording (in Czech) from the presentation is available here: https://youtu.be/WzjJWm4IyPk?si=SImb06tuXGb30BEH .

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SPICE MODEL of SCS215KG (Professional Model) in SPICE PARK

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: SCS215KG MANUFACTURER: ROHM REAMARK: POFESSIONAL MODEL

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 2 Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter Model description IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 3 R1 0.01m V1 0Vdc 0 R2 1MEG U1 SCS215KG_P V_V1 0V 0.5V 1.0V 1.5V 2.0V 2.5V I(R1) 1.0mA 10mA 100mA 1.0A 10A 100A Forward Current Characteristics Circuit Simulation result Evaluation circuit

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 4 Comparison Graph Circuit Simulation result Comparison table IF (A) VF (V) %Error Measurement Simulation 0.001 0.740 0.735 -0.68 0.01 0.780 0.794 1.79 0.1 0.850 0.857 0.82 1 0.950 0.942 -0.84 2 1.000 0.988 -1.20 5 1.100 1.096 -0.36 10 1.250 1.254 0.32 20 1.550 1.551 0.06 50 2.400 2.400 0.00

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 5 0 V1 TD = 0 TF = 500ns PW = 100us PER = 500us V1 = 0 TR = 100us V2 = 1200 V2 0Vdc U1 SCS215KG_PR1 100MEG V(N16650) 10mV 100mV 1.0V 10V 100V 1.0KV I(V2)/(1200V/100us) 10p 100p 1.0n 10n Junction Capacitance Characteristic Circuit Simulation result Evaluation circuit

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 6 Comparison Graph Circuit Simulation result Comparison table VR (V) CT (pF) %Error Measurement Simulation 0.01 1100.000 1079.000 -1.91 0.1 1050.000 1045.000 -0.48 1 800.00 794.00 -0.75 10 330.00 325.00 -1.52 20 238.00 232.00 -2.52 50 155.00 151.00 -2.58 100 110.00 114.00 3.64 200 87.00 90.30 3.79 500 69.00 71.20 3.19 1000 63.00 62.75 -0.40

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 7 V1 0Vdc R1 100m 0 R2 100MEG U1 SCS215KG_P V_V1 0V 0.50KV 1.00KV 1.24KV I(R1) 1.0nA 10nA 100nA 1.0uA 10uA 100uA 1.0mA Reverse Characteristic Circuit Simulation result Evaluation circuit

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 8 Comparison Graph Circuit Simulation result Comparison table IR (uA) VR (V) %Error Measurement Simulation 0.05 750.0 779.1 3.88 0.1 850.0 842.5 -0.88 0.2 920.0 904.3 -1.71 0.5 1005.0 985.0 -1.99 1 1060.0 1045.0 -1.42 2 1120.0 1106.0 -1.25 5 1170.0 1185.0 1.28 9 1200.0 1237.0 3.08

SPICE MODEL of SCS215KG (Professional Model) in SPICE PARK

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SPICE MODEL of SCS215KG (Professional Model) in SPICE PARK