SPICE MODEL of TRS12E65C (Professional Model) in SPICE PARK

189 views

Published on

SPICE MODEL of TRS12E65C (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

0 Comments
0 Likes
Statistics
Notes
  • Be the first to comment

  • Be the first to like this

No Downloads
Views
Total views
189
On SlideShare
0
From Embeds
0
Number of Embeds
12
Actions
Shares
0
Downloads
2
Comments
0
Likes
0
Embeds 0
No embeds

No notes for slide

SPICE MODEL of TRS12E65C (Professional Model) in SPICE PARK

  1. 1. Device Modeling Report COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: TRS12E65C MANUFACTURER: TOSHIBA REMARK: Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 1
  2. 2. Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter IS N RS IKF CJO M VJ ISR BV IBV TT EG Model description Saturation Current Emission Coefficient Series Resistance High-injection Knee Current Zero-bias Junction Capacitance Junction Grading Coefficient Junction Potential Recombination Current Saturation Value Reverse Breakdown Voltage(a positive value) Reverse Breakdown Current(a positive value) Transit Time Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 2
  3. 3. Forward Current Characteristics Circuit Simulation result 10A 1.0A 100mA 0V 0.5V 1.0V 1.5V 2.0V I(R1) V_V1 Evaluation circuit R1 0.01m V1 U1 TRS12E65C 0Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 3
  4. 4. Comparison Graph Circuit Simulation result Comparison table VF (V) IF (A) Measurement Simulation %Error 0.1 0.810 0.811 0.12 0.2 0.833 0.834 0.12 0.5 0.870 0.872 0.23 1 0.910 0.914 0.44 2 0.980 0.981 0.10 5 1.150 1.150 0.00 10 1.410 1.410 0.00 All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 4
  5. 5. Junction Capacitance Characteristic Circuit Simulation result 1.0n 100p 10p 1.0V I(V2)/(650V/1u) 10V 100V V(N16610) Evaluation circuit V2 0Vdc V2 = 650 V1 = 0 TD = 0 TR = 1us TF = 500ns PW = 100us PER = 500us U1 TRS12E65C V1 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 5
  6. 6. Comparison Graph Circuit Simulation result Comparison table CT (pF) VR(V) Measurement Simulation %Error 1 555.000 538.000 -3.06 2 455.000 458.600 0.79 5 355.000 341.100 -3.92 10 280.000 260.000 -7.14 20 198.000 193.300 -2.37 50 127.000 128.300 1.02 100 90.000 94.100 4.56 All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 6
  7. 7. Reverse Characteristic Circuit Simulation result 10uA 1.0uA 100nA 25V 50V 100V 150V 175V I(R1) V_V1 Evaluation circuit R1 100m U1 V1 0Vdc TRS12E65C 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 7
  8. 8. Comparison Graph Circuit Simulation result Comparison table IR (A) VR (V) Measurement Simulation %Error 25 4.20E-07 4.20E-07 0.01 100 1.07E-06 1.07E-06 -0.46 175 2.70E-06 2.70E-06 0.01 All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 8

×