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Microsystems T echnologies 
Basic concepts and terminology 
Review of selected traditional micromachining 
photolithography and mask design, wet and dry bulk etching, 
bonding, thin film deposition and removal, metallization, sacrificial 
processes, other inorganic processes, electroplating 
Polymer techniques 
thick-film polymers, stamping, soft lithography and micromolding, 
stereolithography, LIGA
Goals of Microfabrication Module 
Fabrication could be one or more classes by itself! Thus: 
• Our goal for ENSC859 is to get you to the point where you 
can understand, adapt, and develop high level processes 
similar to fabrication process flows found in the literature. 
 Emphasis will be on high level process design, 
rather than tool-specific details (e.g., “deposit 0.2 μm of Au using e-beam 
evaporation”, rather than specifying the e-beam power, etc., for the 0.2 μm 
ofAu). 
Emphasis will be on overall process design and making sure processes are 
possible in the order given (e.g., not trying to fusion bond wafers at 1000ºC with 
aluminum, which has a lower melting point, already patterned). 
We will cover many different processes, with those more relevant to 
Biomedical Microdevices (e.g., polymer processing, metallization, etching) 
in more detail. 
• 
•
Some Basic Terminology 
Substrates - What we build into (bulk) or on (surface) 
silicon 
glass, quartz 
polymers 
ceramics 
Thin/thick films – go on the substrate 
metals: e.g., Al, Au, Cu, Ni, Pt,Ag, Ti 
insulators: e.g., silicon oxide, silicon nitride, polymers 
others: e.g., silicon (crystalline, amorphous, poly-), 
SiC, diamond, shape memory alloys 
thin films 
substrate substrate
More Basic Terminology 
added 
} materials 
Additive processes 
adding a material to the substrate 
Photolithography 
pattern transfer method of using a light 
sensitive polymer to prevent subtraction 
Subtractive processes 
removing material, either 
substrate or thin film 
Bulk “substrate”processes 
machining the substrate itself 
Thin film “surface”processes 
substrate 
machining films on the surface of a substrate
More Basic Terminology 
Additive vs. Subtractive Processes 
Additive examples Subtractive examples 
• 
• 
• 
• 
• 
• 
• 
oxidation 
CVD/LPCVD/PECVD 
epitaxy 
sputtering 
evaporation 
spin-on methods 
• 
• 
• 
• 
• 
• 
• 
wet isotropic etching 
wet anisotropic etching 
plasma 
RIE 
DRIE 
lift-off techniques 
drilling 
bonding (anodic, fusion, 
adhesive, eutectic) 
electroplating 
implantation, diffusion 
Other processes 
• molding, embossing 
• 
•
More Basic Terminology 
Planar vs. non-planar processes 
Non-planar shape 
Planar processes are still 
more common and generally 
batch processed. 
(Even inherently non-planar processes, 
such as injection molding, are often used 
for planar-compatible shapes.) 
high-aspect ratio structure 
Aspect ratio 
Ratio of depth to width 
low-aspect ratio hole 
high-aspect ratio hole 
low-aspect ratio structure 
Shapes based on planar 
processing
Etching Terminology 
Selectivity 
how fast one thing happens (etches) compared to another 
Mask 
material used to cover another during etching with a much 
slower etch rate (high selectivity) to material being etched 
Good mask selectivity Bad mask selectivity 
Undercut 
etching under the mask (can be desirable)
More Etching T erminology 
Isotropic etchants: 
etch approximately at the same rate in all directions 
Mask undercut: severe, same in all directions 
Etch profile: 
Isotropic Etching: 
limited control with agitation 
no agitation 
with agitation
More Etching T erminology 
Anisotropic etchants: 
etch at different rates in different directions 
Mask undercut: depends on etching anisotropy directions 
Etch profile: 
depends on type of etch 
(wet, dry), crystal direction, 
mask orientation 
[100] 
[111] 
dry etching crystal direction anisotropy 
(approximately vertical)
Wet etching 
More Etching Terminology 
uses wet chemicals to selectively remove substrate or film 
Dry etching 
uses gases (usually) to selectively remove substrate or film 
Non-plasma dry chemical etching 
Plasma etching: 
RF power is used to drive chemical reactions 
Plasma is used instead of high temperatures or very reactive 
chemicals 
Simple plasma etching 
RIE etching 
additional acceleration of ions toward surface 
Deep RIE etching 
RIE etching featuring high aspect ratio process
Plasma 
Still More Basic Etching Concepts 
Partially ionized gas consisting of equal numbers of +ions 
and –ve electrons and a different number of neutral molecules. 
Plasma etching basic process 
1. Generation of reactive species 
2. Diffusion to surface 
3. Adsorption on surface 
4. Chemical reaction 
5. Desorption of by-products 
6. Diffusion into bulk gas 
Plasma etch specifications 
Temperature 
Pressure 
Power 
Gas flows and composition 
These specs affect side wall 
Profile,anisotropy, selectivity, 
Mask undercut, etc.; take 
ENSC851 to see!
Still More Etching T erminology 
Reactive ion etching (RIE) 
Chemical plasma etch is assisted by ionic bombardment 
Bombardment opens areas for reactions 
Results in: 
no undercutting since side walls are not bombarded greatly 
increased etch rate 
lower selectivity (will happily etch everything including maskK)
Material Mechanical Properties 
Young's modulus (E) is a measure of the stiffness. It is defined as the ratio of the 
uniaxial stress over the uniaxial strain. This can be experimentally determined from the 
slope of a stress-strain curve. E is constant where Hooke’s Law holds (linear relation). 
Yield strength is defined as the stress at which a material begins to deform plastically. 
Prior to the yield point the material will deform elastically and will return to its original 
shape when the applied stress is removed. Once the yield point is passed some fraction 
of the deformation will be permanent and non-reversible. 
Poisson's ratio is the ratio of the relative transverse strain (normal to the applied load), 
divided by the relative axial strain (in the direction of the applied load). Ex: when a 
material is stretched in one direction, it tends to contract in the other two directions. 
Knoop hardness test is a test for mechanical hardness for very brittle materials or thin 
sheets. Apyramidal diamond point is pressed into the polished surface with a known 
force, for a specified dwell time, and the resulting indentation is measured. The Knoop 
hardness HK is then given by the formula: HK=P/(CpL2) 
where: 
L = length of indentation along its long axis 
Cp = correction factor related to the shape of the indenter, ideally 0.070279 
P = load 
Lots of other hardness tests for other material typesK
Example Mechanical Material Properties 
Meting temp. Youngs mod. Yield strength Poisson ratio Density 
Kg/m3 
Knoop hard. 
°C GPa GPa GPa 
Bulk silicon 1415 160-200 6.8 0.22 2330 5-13 
Polysilicon 1415 150-200 10-13 
Silicon dioxide 1700 70-75 8.4 0.17 2200 15-18 
Pyrex glass 64 0.2 2230 
Silicon nitride 1800 210-380 14 0.25 3100 8 
SiC High 300-400 21 0.19 3210 24-27 
CVD diamond 800-1100 53 0.07 3530 
Aluminum 661 70 0.2 0.33 2700 
Platinum 1772 170 0.137-0.17 0.38 21440 
Gold 1065 80 0.12 0.38-0.42 19280 
Stainless steel 200 2.1 0.3 7900 6.5 
Polymide 7.5-15 0.045-0.345 0.35-0.45 1420 
Parylene-n 410 2..4 0.042 1100 
Parylene-c 290 2.7 0.055 1290 
Parylene-d 380 2.6 0.062 1418 
SU-8 82 4-5 0.034 0.22 1200 
PDMS 0.0075 0.003-0.015
Other Important Material Properties 
Thermal properties 
Melting point 
Specific heat: J/K (energy to heat) 
Thermal expansion coefficient: α = ΔL/(L ΔT) (expansion of heat) 
Thermal conductivity: W/cmK or W/mK (how well conducts heat) 
Electrical properties 
Dielectric constant 
Breakdown strength: V/cm 
7740 pyrex 
Optical properties (λ dep.) 
Transmission spectrum 
Reflectivity 
Refractive index 
(speed of light reduction)
Different from bulk properties 
Sufaces are uniquely reactive 
Surfaces are readily contaminated 
Surfaces readily alter their structure 
Important surface properties 
Roughness and flatness 
Dangling bonds/surface chemistry 
Hydrophobicity (wettability and contact angle) 
Biocompatibility and fouling 
Surface charge 
Light and thermal reflection and scattering 
Surfaces are very important for microfluidic flow and especially for samples 
containing surface-reactive analytes such as DNA.
Thank You 
www.HelpWithAssignment.com
Introduction to Microsystems for Bio Applications
Introduction to Microsystems for Bio Applications
Introduction to Microsystems for Bio Applications
Introduction to Microsystems for Bio Applications
Introduction to Microsystems for Bio Applications

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Introduction to Microsystems for Bio Applications

  • 1. Microsystems T echnologies Basic concepts and terminology Review of selected traditional micromachining photolithography and mask design, wet and dry bulk etching, bonding, thin film deposition and removal, metallization, sacrificial processes, other inorganic processes, electroplating Polymer techniques thick-film polymers, stamping, soft lithography and micromolding, stereolithography, LIGA
  • 2. Goals of Microfabrication Module Fabrication could be one or more classes by itself! Thus: • Our goal for ENSC859 is to get you to the point where you can understand, adapt, and develop high level processes similar to fabrication process flows found in the literature.  Emphasis will be on high level process design, rather than tool-specific details (e.g., “deposit 0.2 μm of Au using e-beam evaporation”, rather than specifying the e-beam power, etc., for the 0.2 μm ofAu). Emphasis will be on overall process design and making sure processes are possible in the order given (e.g., not trying to fusion bond wafers at 1000ºC with aluminum, which has a lower melting point, already patterned). We will cover many different processes, with those more relevant to Biomedical Microdevices (e.g., polymer processing, metallization, etching) in more detail. • •
  • 3. Some Basic Terminology Substrates - What we build into (bulk) or on (surface) silicon glass, quartz polymers ceramics Thin/thick films – go on the substrate metals: e.g., Al, Au, Cu, Ni, Pt,Ag, Ti insulators: e.g., silicon oxide, silicon nitride, polymers others: e.g., silicon (crystalline, amorphous, poly-), SiC, diamond, shape memory alloys thin films substrate substrate
  • 4. More Basic Terminology added } materials Additive processes adding a material to the substrate Photolithography pattern transfer method of using a light sensitive polymer to prevent subtraction Subtractive processes removing material, either substrate or thin film Bulk “substrate”processes machining the substrate itself Thin film “surface”processes substrate machining films on the surface of a substrate
  • 5. More Basic Terminology Additive vs. Subtractive Processes Additive examples Subtractive examples • • • • • • • oxidation CVD/LPCVD/PECVD epitaxy sputtering evaporation spin-on methods • • • • • • • wet isotropic etching wet anisotropic etching plasma RIE DRIE lift-off techniques drilling bonding (anodic, fusion, adhesive, eutectic) electroplating implantation, diffusion Other processes • molding, embossing • •
  • 6. More Basic Terminology Planar vs. non-planar processes Non-planar shape Planar processes are still more common and generally batch processed. (Even inherently non-planar processes, such as injection molding, are often used for planar-compatible shapes.) high-aspect ratio structure Aspect ratio Ratio of depth to width low-aspect ratio hole high-aspect ratio hole low-aspect ratio structure Shapes based on planar processing
  • 7. Etching Terminology Selectivity how fast one thing happens (etches) compared to another Mask material used to cover another during etching with a much slower etch rate (high selectivity) to material being etched Good mask selectivity Bad mask selectivity Undercut etching under the mask (can be desirable)
  • 8. More Etching T erminology Isotropic etchants: etch approximately at the same rate in all directions Mask undercut: severe, same in all directions Etch profile: Isotropic Etching: limited control with agitation no agitation with agitation
  • 9. More Etching T erminology Anisotropic etchants: etch at different rates in different directions Mask undercut: depends on etching anisotropy directions Etch profile: depends on type of etch (wet, dry), crystal direction, mask orientation [100] [111] dry etching crystal direction anisotropy (approximately vertical)
  • 10. Wet etching More Etching Terminology uses wet chemicals to selectively remove substrate or film Dry etching uses gases (usually) to selectively remove substrate or film Non-plasma dry chemical etching Plasma etching: RF power is used to drive chemical reactions Plasma is used instead of high temperatures or very reactive chemicals Simple plasma etching RIE etching additional acceleration of ions toward surface Deep RIE etching RIE etching featuring high aspect ratio process
  • 11. Plasma Still More Basic Etching Concepts Partially ionized gas consisting of equal numbers of +ions and –ve electrons and a different number of neutral molecules. Plasma etching basic process 1. Generation of reactive species 2. Diffusion to surface 3. Adsorption on surface 4. Chemical reaction 5. Desorption of by-products 6. Diffusion into bulk gas Plasma etch specifications Temperature Pressure Power Gas flows and composition These specs affect side wall Profile,anisotropy, selectivity, Mask undercut, etc.; take ENSC851 to see!
  • 12. Still More Etching T erminology Reactive ion etching (RIE) Chemical plasma etch is assisted by ionic bombardment Bombardment opens areas for reactions Results in: no undercutting since side walls are not bombarded greatly increased etch rate lower selectivity (will happily etch everything including maskK)
  • 13. Material Mechanical Properties Young's modulus (E) is a measure of the stiffness. It is defined as the ratio of the uniaxial stress over the uniaxial strain. This can be experimentally determined from the slope of a stress-strain curve. E is constant where Hooke’s Law holds (linear relation). Yield strength is defined as the stress at which a material begins to deform plastically. Prior to the yield point the material will deform elastically and will return to its original shape when the applied stress is removed. Once the yield point is passed some fraction of the deformation will be permanent and non-reversible. Poisson's ratio is the ratio of the relative transverse strain (normal to the applied load), divided by the relative axial strain (in the direction of the applied load). Ex: when a material is stretched in one direction, it tends to contract in the other two directions. Knoop hardness test is a test for mechanical hardness for very brittle materials or thin sheets. Apyramidal diamond point is pressed into the polished surface with a known force, for a specified dwell time, and the resulting indentation is measured. The Knoop hardness HK is then given by the formula: HK=P/(CpL2) where: L = length of indentation along its long axis Cp = correction factor related to the shape of the indenter, ideally 0.070279 P = load Lots of other hardness tests for other material typesK
  • 14. Example Mechanical Material Properties Meting temp. Youngs mod. Yield strength Poisson ratio Density Kg/m3 Knoop hard. °C GPa GPa GPa Bulk silicon 1415 160-200 6.8 0.22 2330 5-13 Polysilicon 1415 150-200 10-13 Silicon dioxide 1700 70-75 8.4 0.17 2200 15-18 Pyrex glass 64 0.2 2230 Silicon nitride 1800 210-380 14 0.25 3100 8 SiC High 300-400 21 0.19 3210 24-27 CVD diamond 800-1100 53 0.07 3530 Aluminum 661 70 0.2 0.33 2700 Platinum 1772 170 0.137-0.17 0.38 21440 Gold 1065 80 0.12 0.38-0.42 19280 Stainless steel 200 2.1 0.3 7900 6.5 Polymide 7.5-15 0.045-0.345 0.35-0.45 1420 Parylene-n 410 2..4 0.042 1100 Parylene-c 290 2.7 0.055 1290 Parylene-d 380 2.6 0.062 1418 SU-8 82 4-5 0.034 0.22 1200 PDMS 0.0075 0.003-0.015
  • 15. Other Important Material Properties Thermal properties Melting point Specific heat: J/K (energy to heat) Thermal expansion coefficient: α = ΔL/(L ΔT) (expansion of heat) Thermal conductivity: W/cmK or W/mK (how well conducts heat) Electrical properties Dielectric constant Breakdown strength: V/cm 7740 pyrex Optical properties (λ dep.) Transmission spectrum Reflectivity Refractive index (speed of light reduction)
  • 16. Different from bulk properties Sufaces are uniquely reactive Surfaces are readily contaminated Surfaces readily alter their structure Important surface properties Roughness and flatness Dangling bonds/surface chemistry Hydrophobicity (wettability and contact angle) Biocompatibility and fouling Surface charge Light and thermal reflection and scattering Surfaces are very important for microfluidic flow and especially for samples containing surface-reactive analytes such as DNA.