SPICE MODEL of TPCA8065-H (Standard+BDS Model) in SPICE PARK
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SPICE MODEL of TPCA8065-H (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of TPCA8065-H (Standard+BDS Model) in SPICE PARK
- 1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: MOSFET (Model Parameters) PART NUMBER: TPCA8065-H MANUFACTURER: TOSHIBA REMARK: Body Diode (Model Parameters)
- 2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2 MOSFET MODEL PSpice model parameter Model description LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility
- 3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3 Transconductance Characteristics Circuit Simulation result Comparison table ID (A) gfs (S) %Error Measurement Simulation 5 25 24.384 -2.46 10 35 34.432 -1.62 20 49 48.580 -0.86 30 59 59.389 0.66 VDS=10V
- 4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4 V_VGS 0V 1.0V 2.0V 3.0V 4.0V 5.0V -I(VDS) 0A 10A 20A 30A VGS 0 VDS 10VU1 TPCA8065-H Vgs-Id Characteristics Circuit Simulation result Evaluation circuit
- 5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5 Comparison Graph Circuit Simulation result Comparison table ID (A) VGS (V) %Error Measurement Simulation 1 2.500 2.427 -2.92 2 2.580 2.502 -3.02 5 2.720 2.653 -2.46 10 2.860 2.823 -1.29 20 3.050 3.064 0.46 30 3.230 3.249 0.59 VDS=10V
- 6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6 VGS 10V 0 VDS U1 TPCA8065-H V_VDS 0V 20mV 40mV 60mV 80mV -I(VDS) 0A 4.0A 8.0A Rds(on) Characteristics Circuit Simulation result Evaluation circuit Test condition: ID=8(A), VGS=10(V) Parameter Unit Measurement Simulation %Error RDS(on) mΩ 9.4 9.4 0
- 7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7 Time*1m 0s 4ns 8ns 12ns 16ns 20ns 24ns V(W1:3) 0V 4V 8V 12V 0 D1 DMod - + W1 ION = 0 IOFF = 1mA W IGTD = 0 TF = 10n PW = 10m PER = 1 I1 = 0 I2 = 1m TR = 10n ID 16A VDD 24V U1 TPCA8065-H Gate Charge Characteristics Circuit Simulation result Evaluation circuit Test condition: VDD=24(V), ID=16(A), VGS=10(V) Parameter Unit Measurement Simulation %Error Qgs nc 4.4 4.4 0 Qgd nc 2.1 62.1 0 Qg nc 51 15.741 -21.30
- 8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8 Capacitance Characteristics Simulation result Comparison table VDS (V) Cbd (pF) %Error Measurement Simulation 0.1 775 772 -0.39 0.5 580 600 3.45 1.0 515 491 -4.66 5.0 250 259 3.60 10.0 182 188 3.30 30.0 116 111 -4.31 Simulation Measurement
- 9. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9 Time 1.84us 1.92us 2.00us 2.08us 2.16us 2.24us V(G) V(D)/1.5 0V 5V 10V 15V 20V D U1 TPCA8065-H V1TD = 2u TF = 20n PW = 5u PER = 500u V1 = 0 TR = 20n V2 = 20 VCC 15 0 RL 1.88 L2 50nH 12 L1 30nH 12 R2 4.7 G R1 4.7 Switching Time Characteristics Circuit Simulation result Evaluation circuit Test condition: ID=8(A), VDD=15(V), VGS=10/0(V) Parameter Unit Measurement Simulation %Error ton ns 8.2 8.175 -0.30
- 10. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 10 V_VDS 0V 0.4V 0.8V 1.2V 1.6V 2.0V -I(VDS) 0A 4A 8A 12A 16A 20A VGS 0 VDS U1 TPCA8065-H Output Characteristics Circuit Simulation result Evaluation circuit VGS=2.6V 2.8 2.9 3.0 3.1 3.2 3.3 10, 8, 6, 5 4.5 3.4 4
- 11. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 11 V_VDS 0V -0.2V -0.4V -0.6V -0.8V -1.0V I(VDS) 100mA 1.0A 10A 100A VDS 0 U1 TPCA8065-H FWD Forward Current Characteristics Circuit Simulation result Evaluation circuit
- 12. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 12 Comparison Graph Simulation result Comparison table IDR (A) -VDS (V) %Error Measurement Simulation 0.1 0.651 0.651 0.00 0.2 0.671 0.671 0.00 0.5 0.697 0.698 0.14 1 0.721 0.720 -0.14 2 0.749 0.745 -0.53 5 0.789 0.789 0.00 10 0.839 0.840 0.12 20 0.918 0.922 0.44 30 1.000 0.997 -0.30
- 13. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 13 Time 9.88us 9.96us 10.04us 10.12us 10.20us I(R1) -400mA -300mA -200mA -100mA -0mA 100mA 200mA 300mA 400mA 0 V1TD = 0ns TF = 10ns PW = 10us PER = 1ms V1 = -9.2V TR = 10ns V2 = 10.7V R1 50 U1 TPCA8065-H Reverse Recovery Characteristics Circuit Simulation result Evaluation circuit Compare Measurement vs. Simulation Parameter Unit Measurement Simulation %Error trj ns 14.4 14.292 -0.75
- 14. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 14 Reverse Recovery Characteristics Reference Trj = 14.4(ns) Trb = 24.8(ns) Conditions: Ifwd = lrev = 0.2(A), Rl = 50 Relation between trj and trb Example Measurement