Original IGBT N-CHANNEL IRG7IC28U IRG71C28U G7IC28U G71C28U 71C28 225A 600V TO-220 New IR

1. www.irf.com 1
09/02/2010
IRG7IC28UPbF
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trenchIGBTtechnologytoachievelowVCE(on) andlowEPULSE
TM ratingpersiliconareawhichimprovepanel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Features
l Advanced Trench IGBT Technology
l Optimized for Sustain and Energy Recovery
circuits in PDP applications
l Low VCE(on) and Energy per Pulse (EPULSE
TM)
for improved panel efficiency
l High repetitive peak current capability
l Lead Free package
PDP TRENCH IGBT
E
C
G
n-channel
G C E
Gate Collector Emitter
TO-220AB
Full-Pak
G
C
E
PD - 97562
Absolute Maximum Ratings
Parameter Units
VGE Gate-to-Emitter Voltage V
IC @ TC = 25°C Continuous Collector Current, VGE @ 15V A
IC @ TC = 100°C Continuous Collector, VGE @ 15V
IRP @ TC = 25°C Repetitive Peak Current c
PD @TC = 25°C Power Dissipation W
PD @TC = 100°C Power Dissipation
Linear Derating Factor W/°C
TJ Operating Junction and °C
TSTG Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw N
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case d ––– 3.1 °C/W
RθJA Junction-to-Ambient d ––– 65
Max.
12
225
25
±30
300
-40 to + 150
10lbxin (1.1Nxm)
40
16
0.32
VCE min 600 V
VCE(ON) typ. @ IC = 40A 1.70 V
IRP max @ TC= 25°C c 225 A
TJ max 150 °C
Key Parameters

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Notes:
 Half sine wave with duty cycle <= 0.02, ton=1.0µsec.
‚ Rθ is measured at TJ of approximately 90°C.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BVCES Collector-to-Emitter Breakdown Voltage 600 ––– ––– V
V(BR)ECS Emitter-to-Collector Breakdown Voltagee 15 ––– ––– V
∆ΒVCES/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.57 ––– V/°C
––– 1.25 –––
––– 1.42 –––
1.70 1.95 V
––– 1.96 –––
––– 2.97 –––
––– 1.75 –––
VGE(th) Gate Threshold Voltage 2.2 ––– 4.7 V
∆VGE(th)/∆TJ Gate Threshold Voltage Coefficient ––– -11 ––– mV/°C
ICES Collector-to-Emitter Leakage Current ––– 0.5 20
––– 30 ––– µA
––– 90
––– 305 –––
IGES Gate-to-Emitter Forward Leakage ––– ––– 100 nA
Gate-to-Emitter Reverse Leakage ––– ––– -100
gfe Forward Transconductance ––– 55 ––– S
Qg Total Gate Charge ––– 70 ––– nC
Qgc Gate-to-Collector Charge ––– 25 –––
td(on) Turn-On delay time ––– 30 ––– IC = 40A, VCC = 400V
tr Rise time ––– 35 ––– ns RG = 22Ω, L=100µH
td(off) Turn-Off delay time ––– 260 ––– TJ = 25°C
tf Fall time ––– 145 –––
td(on) Turn-On delay time ––– 25 ––– IC = 40A, VCC = 400V
tr Rise time ––– 40 ––– ns RG = 22Ω, L=100µH
td(off) Turn-Off delay time ––– 280 ––– TJ = 150°C
tf Fall time ––– 320 –––
tst Shoot Through Blocking Time 100 ––– ––– ns
EPULSE Energy per Pulse µJ
Human Body Model
Machine Model
Cies Input Capacitance ––– 1880 –––
Coes Output Capacitance ––– 75 ––– pF
Cres Reverse Transfer Capacitance ––– 45 –––
LC Internal Collector Inductance ––– 4.5 ––– Between lead,
nH 6mm (0.25in.)
LE Internal Emitter Inductance ––– 7.5 ––– from package
VGE = 15V, ICE = 160A e
Static Collector-to-Emitter VoltageVCE(on)
VGE = 15V, ICE = 40A, TJ = 150°C e
VGE = 15V, ICE = 40A e
––– 930 –––
VCE = 25V, ICE = 40A
VCE = 400V, IC = 40A, VGE = 15Ve
VCC = 240V, RG= 5.1Ω, TJ = 25°C
––– 770 –––
VCC = 240V, VGE = 15V, RG= 5.1Ω
VCE = VGE, ICE = 250µA
VCE = 600V, VGE = 0V
VCE = 600V, VGE = 0V, TJ = 150°C
VGE = 30V
VGE = -30V
VCE = 600V, VGE = 0V, TJ = 100°C
ƒ = 1.0MHz
and center of die contact
VCE = 600V, VGE = 0V, TJ = 125°C
L = 220nH, C= 0.40µF, VGE = 15V
L = 220nH, C= 0.40µF, VGE = 15V
VCC = 240V, RG= 5.1Ω, TJ = 100°C
Conditions
VGE = 0V, ICE = 1.0mA
Reference to 25°C, ICE = 1.0mA
VGE = 15V, ICE = 70A e
VGE = 15V, ICE = 12A e
VGE = 15V, ICE = 24A e
VGE = 0V, ICE = 1.0A
ESD
Class H1C (2000V)
(Per JEDEC standard JESD22-A114)
Class M4 (425V)
(Per EIA/JEDEC standard EIA/JESD22-A115)
VCE = 30V
VGE = 0V

3. IRG7IC28UPbF
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Fig 1. Typical Output Characteristics @ 25°C
Fig 3. Typical Output Characteristics @ 125°C Fig 4. Typical Output Characteristics @ 150°C
Fig 2. Typical Output Characteristics @ 75°C
Fig 5. Typical Transfer Characteristics Fig 6. VCE(ON) vs. Gate Voltage
0 2 4 6 8 10
VCE (V)
0
25
50
75
100
125
150
175
200
ICE(A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
0 2 4 6 8 10
VCE (V)
0
25
50
75
100
125
150
175
200
ICE(A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
0 2 4 6 8 10 12 14
VCE (V)
0
25
50
75
100
125
150
175
200
ICE(A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
0 2 4 6 8 10 12 14
VCE (V)
0
25
50
75
100
125
150
175
200
ICE(A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
2 4 6 8 10
VGE, Gate-to-Emitter Voltage (V)
0
25
50
75
100
125
150
175
200
ICE,Collector-to-EmitterCurrent(A)
TJ = 25°C
TJ = 150°C
0 5 10 15 20
VGE, Voltage Gate-to-Emitter (V)
1.2
1.4
1.6
1.8
2.0
VCE,VoltageCollector-to-Emitter(V)
TJ = 25°C
TJ = 150°C
IC = 20A

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Fig 7. Maximum Collector Current vs. Case Temperature Fig 8. Typical Repetitive Peak Current vs. Case Temperature
Fig 10. Typical EPULSE vs. Collector-to-Emitter VoltageFig 9. Typical EPULSE vs. Collector Current
Fig 11. EPULSE vs. Temperature Fig 12. Forrward Bias Safe Operating Area
25 50 75 100 125 150
TC (°C)
0
5
10
15
20
25IC(A)
25 50 75 100 125 150
Case Temperature (°C)
0
50
100
150
200
250
RepetitivePeakCurrent(A)
ton= 2µs
Duty cycle <= 0.05
Half Sine Wave
160 170 180 190 200 210 220 230 240
IC, Peak Collector Current (A)
450
500
550
600
650
700
750
800
850
900
950
EnergyperPulse(µJ)
VCC= 240V
L = 220nH
C = variable
100°C
25°C
200 205 210 215 220 225 230 235 240
VCE, Collector-to-Emitter Voltage (V)
450
500
550
600
650
700
750
800
850
900
950
EnergyperPulse(µJ)
L = 220nH
C = 0.4µF
100°C
25°C
20 40 60 80 100 120 140 160
TJ, Temperature (ºC)
400
500
600
700
800
900
1000
1100
EnergyperPulse(µJ)
VCC= 240V
L = 220nH
t = 1µs half sine
C= 0.4µF
C= 0.3µF
C= 0.2µF
1.0 10 100 1000
VCE (V)
1
10
100
1000
IC(A)
1msec
10µsec
100µsec
Tc = 25°C
Tj = 150°C
Single Pulse

5. IRG7IC28UPbF
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Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
Fig 16. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 15 - Typ. Energy Loss vs. IC
TJ = 150°C; L = 250µH; VCE = 400V, RG = 22Ω; VGE = 15V
0 100 200 300 400 500
VCE, Collector-toEmitter-Voltage(V)
10
100
1000
10000
100000Capacitance(pF)
Cies
Coes
Cres
VGS = 0V, f = 1 MHZ
Cies = Cge + Cgd, C ce SHORTED
Cres = Cgc
Coes = Cce + Cgc
0 10 20 30 40 50 60 70 80
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VGE,Gate-to-EmitterVoltage(V)
VCES = 120V
VCES = 300V
VCES = 400V
IC = 40A
0 10 20 30 40 50 60 70 80 90
IC (A)
0
1000
2000
3000
4000
5000
6000
Energy(µJ)
EOFF
EON
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
ThermalResponse(ZthJC)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τJ
τJ
τ1
τ1
τ2
τ2
τ3
τ3
R1
R1
R2
R2
R3
R3
Ci i/Ri
Ci= τi/Ri
τ
τC
τ4
τ4
R4
R4 Ri (°C/W) τi (sec)
0.19973 0.000268
0.38341 0.002261
1.17794 0.154543
1.36892 2.511

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Fig 16a. tst and EPULSE Test Circuit Fig 16b. tst Test Waveforms
Fig 16c. EPULSE Test Waveforms
1K
VCC
DUT
0
L
Fig. 17 - Gate Charge Circuit (turn-off)
DRIVER
DUT
L
C
VCC
RG
RG
B
A
Ipulse
Energy
VCE
IC Current
PULSEA
PULSEB
tST

7. IRG7IC28UPbF
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TO-220AB Full-Pak package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/2010
The specifications set forth in this data sheet are the sole and
exclusive specifications applicable to the identified product,
and no specifications or features are implied whether by
industry custom, sampling or otherwise. We qualify our
products in accordance with our internal practices and
procedures, which by their nature do not include qualification
to all possible or even all widely used applications. Without
limitation, we have not qualified our product for medical use or
applications involving hi-reliability applications. Customers
are encouraged to and responsible for qualifying product to
their own use and their own application environments,
especially where particular features are critical to operational
performance or safety. Please contact your IR representative if
you have specific design or use requirements or for further
information.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
TO-220AB Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Full-Pak Part Marking Information
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