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Device Modeling Report




COMPONENTS:THYRISTOR
PART NUMBER:BT152B-400R
MANUFACTURER: PHILIPS SEMICONDUCTOR




                 Bee Technologies Inc.


  All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
DIODE MODEL
 Pspice model
                                        Model description
  Parameter
       IS         Saturation Current
       N          Emission Coefficient
      RS          Series Resistance
      IKF         High-injection Knee Current
     CJO          Zero-bias Junction Capacitance
       M          Junction Grading Coefficient
       VJ         Junction Potential
     ISR          Recombination Current Saturation Value
      BV          Reverse Breakdown Voltage(a positive value)
     IBV          Reverse Breakdown Current(a positive value)
       TT         Transit Time




          All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
IG-VT Characteristic

Evaluation Circuit




Simulation result




                                                             Simulation




Comparison Table
                                 Measurement            Simulation             % Error
           IGT (mA)                   3                   2.9923              -0.25667
            VGT (V)                  0.6                 0.591412             -1.43133

               All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
ITM-VTM Characteristic

Evaluation Circuit




Simulation result




                                                        Simulation




Comparison Table
        At ITM=40A           Measurement           Simulation            % Error
          VTM(V)                 1.4                 1.4527              3.76429

               All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
Holding Characteristic (IH)

Evaluation Circuit




Simulation result




                                                     Simulation




Comparison Table
            VD=12V               Measurement             Simulation           % Error
            IH(mA)                   15                    15.100             0.66667


               All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
Switching Time Characteristic

Evaluation Circuit




Simulation result




                                                   Simulation




Comparison Table
                           Measurement           Simulation             %Error
         Ton(us)                2                  2.0532               2.66000
         Toff(us)              70                  69.671              -0.47000


               All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

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SPICE MODEL of BT152B-400R in SPICE PARK

  • 1. Device Modeling Report COMPONENTS:THYRISTOR PART NUMBER:BT152B-400R MANUFACTURER: PHILIPS SEMICONDUCTOR Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 2. DIODE MODEL Pspice model Model description Parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 3. IG-VT Characteristic Evaluation Circuit Simulation result Simulation Comparison Table Measurement Simulation % Error IGT (mA) 3 2.9923 -0.25667 VGT (V) 0.6 0.591412 -1.43133 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 4. ITM-VTM Characteristic Evaluation Circuit Simulation result Simulation Comparison Table At ITM=40A Measurement Simulation % Error VTM(V) 1.4 1.4527 3.76429 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 5. Holding Characteristic (IH) Evaluation Circuit Simulation result Simulation Comparison Table VD=12V Measurement Simulation % Error IH(mA) 15 15.100 0.66667 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 6. Switching Time Characteristic Evaluation Circuit Simulation result Simulation Comparison Table Measurement Simulation %Error Ton(us) 2 2.0532 2.66000 Toff(us) 70 69.671 -0.47000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004