CMH05A PSpice Model (Free SPICE Model)

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD
PART NUMBER: CMH05A
MANUFACTURER: TOSHIBA
Device Modeling Report
Bee Technologies Inc.

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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SPICE MODEL
*$
* PART NUMBER: CMH05A
* MANUFACTURER: TOSHIBA
* VRRM=400, IF=1A, IFSM=10A
* All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
.MODEL DCMH05A D
+ IS=165.58E-6
+ N=7.0824
+ RS=65.866E-3
+ IKF=.55393
+ CJO=13.548E-12
+ M=.34397
+ VJ=.3905
+ISR=0
+ BV=400
+ IBV=10.000E-6
+ TT=14.5000E-9
*$

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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DIODE MODEL PARAMETERS
PSpice model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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V_V1
0V 1.0V 2.0V 3.0V 3.8V
I(R1)
10mA
100mA
1.0A
10A
100A
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
R1
0.01m
V1
0Vdc
0
D1
DCMH05A

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Comparison Graph
Circuit Simulation Result
Simulation Result
Ifwd (A)
Vfwd (V)
%Error
Measurement Simulation
0.1 1.232 1.196 -2.90
0.2 1.337 1.346 0.68
0.5 1.549 1.581 2.06
1 1.787 1.809 1.24
2 2.104 2.101 -0.13
5 2.668 2.624 -1.64
10 3.187 3.206 0.59

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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V(N11503)
1.0V 10V 30V
I(V2)/(400V/1u)
1.0p
10p
100p
Capacitance Characteristic
Circuit Simulation Result
Evaluation Circuit
D1
DCMH05A
V2
0Vdc
V1
TD = 0
TF = 50ns
PW = 5us
PER = 10us
V1 = 0
TR = 1u
V2 = 400
0

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Comparison Graph
Circuit Simulation Result
Simulation Result
Vrev (V)
Cj (pF)
%Error
Measurement Simulation
1 9.200 9.219 0.21
2 7.400 7.679 3.77
5 5.650 5.910 4.61
10 4.580 4.799 4.77
20 3.720 3.892 4.63
30 3.300 3.442 4.30

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Time
19.94us 19.98us 20.02us 20.06us 20.10us 20.14us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj ns 9.20 8.7667 -4.71
0
V1TD = 13ns
TF = 10ns
PW = 20us
PER = 50us
V1 = -9.1V
TR = 10ns
V2 = 11.4V
R1
50
D1
DCMH05A

9. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Reverse Recovery Characteristic Reference
Trj =9.20(ns)
Trb= 6.40(ns)
Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50
Relation between trj and trb
Example
Measurement