This document provides a device modeling report for a general purpose rectifier diode with part number TVR1G from manufacturer Toshiba. It includes the SPICE model parameters for the diode, evaluation of the forward current and junction capacitance characteristics through circuit simulation and comparison with measurements, and evaluation of the reverse recovery characteristic through circuit simulation and comparison with measurements.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Device Modeling Report
Bee Technologies Inc.
COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD
PART NUMBER: TVR1G
MANUFACTURER: TOSHIBA

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
SPICE MODEL
PSpice model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
*$
* PART NUMBER: TVR1G
* MANUFACTURER: TOSHIBA
* All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
.MODEL TVR1G D
+ IS=132.34E-9
+ N=2.2168
+ RS=21.907E-3
+ IKF=24.247
+ ISR=0
+ CJO=11.075E-12
+ M=.27938
+ VJ=.82645
+ BV=400
+ IBV=10.000E-6
+ TT=513.60E-9
*$

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
D1
TVR1G
R1
0.01m
V1
0Vdc
0
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph
Circuit Simulation Result
Simulation Result
Ifwd(A)
Vfwd(V)
Measurement
Vfwd(V)
Simulation
%Error
0.1 0.778 0.779 -0.103
0.2 0.820 0.820 -0.049
0.5 0.882 0.879 0.351
1 0.930 0.931 -0.054
2 0.994 0.994 -0.050
5 1.116 1.116 0.036

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
0
V2
0Vdc
D1 TVR1G
V1
TD = 0
TF = 50n
PW = 5u
PER = 10u
V1 = 0
TR = 10n
V2 = 400
Junction Capacitance Characteristic
Circuit Simulation Result
Evaluation Circuit

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph
Circuit Simulation Result
Simulation Result
Vrev(V)
Cj(pF)
Measurement
Cj(pF)
Simulation
%Error
0 11.280 11.280 0.000
0.1 10.673 11.086 -3.870
0.2 10.296 10.527 -2.244
0.5 9.572 9.746 -1.818
1 8.831 8.888 -0.649
2 7.921 7.867 0.686
5 6.552 6.382 2.598
10 5.483 5.410 1.321
20 4.462 4.503 -0.910
50 3.488 3.503 -0.416
100 2.785 2.860 -2.683

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
0
V1
TD = 0
TF = 10ns
PW = 20us
PER = 50us
V1 = -9.18V
TR = 10ns
V2 = 10.8V
R1
50
D1
TVR1G
Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation %Error
trr 356.0 ns 358.1 ns 0.589

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Reverse Recovery Characteristic Reference
Trj =148(ns)
Trb=208(ns)
Conditions: Ifwd=Irev=0.2(A), Rl=50
Example
Relation between trj and trb
Measurement