This document summarizes the SPICE model parameters and test results for a Toshiba CLH01 general purpose rectifier diode. It includes the SPICE subcircuit model, descriptions of each model parameter, graphs comparing forward and reverse voltage and current characteristics from circuit simulation and measurement, and analysis of reverse recovery time.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD
PART NUMBER: CLH01
MANUFACTURER: TOSHIBA
Device Modeling Report
Bee Technologies Inc.

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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SPICE MODEL
*$
* PART NUMBER: CLH01
* MANUFACTURER: TOSHIBA
* All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
.MODEL DCLHO1 D
+ IS=226.31E-12
+ N=1.4635
+ RS=13.742E-3
+ IKF=.55254
+ CJO=45.316E-12
+ M=.6717
+ VJ=9.9900
+ BV=200
+ IBV=10.000E-6
+ ISR=0
+ TT=16.594E-9
*$

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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DIODE MODEL PARAMETERS
PSpice model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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V_V1
0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V
I(R1)
10mA
100mA
1.0A
10A
100A
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
R1
0.01m
V1
0Vdc
0
D1
DCLHO1

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Comparison Graph
Circuit Simulation Result
Simulation Result
Ifwd (A)
Vfwd (V)
%Error
Measurement Simulation
0.1 0.761 0.758 -0.39
0.2 0.791 0.789 -0.25
0.5 0.831 0.837 0.72
1 0.885 0.885 0.00
2 0.947 0.945 -0.21
5 1.055 1.054 -0.09
10 1.176 1.175 -0.09
20 1.364 1.3650 0.07

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V(N11503)
10V5.0V 30V
I(V2)/(200/1u)
10pA
100pA
Capacitance Characteristic
Circuit Simulation Result
Evaluation Circuit
V2
0Vdc
V1
TD = 0
TF = 50ns
PW = 5us
PER = 10us
V1 = 0
TR = 1u
V2 = 200
0
D1
DCLHO1

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Comparison Graph
Circuit Simulation Result
Simulation Result
Vrev (V)
Cj (pF)
%Error
Measurement Simulation
5 35.000 34.480 -1.49
10 27.700 28.444 2.69
20 21.300 21.653 1.66
30 18.500 17.841 -3.56

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Time
20.00us 20.04us 20.08us 20.12us 20.16us 20.20us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj ns 11.20 10.82 -3.39
0
V1TD = 68ns
TF = 13ns
PW = 20us
PER = 50us
V1 = -9.3V
TR = 10ns
V2 = 10.8
R1
50
D1
DCLHO1

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Reverse Recovery Characteristic Reference
Measurement
Trj =11.20(ns)
Trb= 8.00(ns)
Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50
Relation between trj and trb
Example