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Transistores

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Transistores

  1. 1. BSS13• 0.22 A, 50 V. RDS(ON) = 3.5Ω @ VGS = 10 VRDS(ON) = 6.0Ω @ VGS = 4.5 V• High density cell design for extremely low RDS(ON)• Rugged and Reliable• Compact industry standard SOT-23 surface mountJ210• For surface mounted applications in order to optimize board space.• Low profile package• Built-in strain relief• Glass passivated junction• Excellent clamping capability• Low inductance• Fast response time: typically less than 1.0 ps from 0 volts to BV min• Typical IR less than 1µA above 10V• High temperature soldering : 250°C/10 seconds at t e r m i n a l s .• P l a s t i c p a c k a g e h a s U n d e r w r i t e r s L a bo r a t o r y F l a m m a b i l i t y Classification 94V-O
  2. 2. BU406ABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collector-Base Voltage (IE = 0) 400 VVCEV Collector-Emitter Voltage (VBE = -1.5 V)400 VVCEO Collector-Emitter Voltage (IB = 0) 200 VVEBO Emitter-Base Voltage (IC = 0) 6 VIC Collector Current 7 A
  3. 3. 2N700ICM Collector Peak Current (repetitive) 10 AICM Collector Peak Current (tp < 10 ms) 15 AIB Base Current 4 APtot Total Dissipation at Tc £ 25 oC 60 WTstg Storage Temperature -65 to 150 oCTj Max. Operating Junction Temperature 150 oC¼ymbol Parameter Min Typ Max Unit ConditionsBVDSS Drain-to-Source Breakdown Voltage 60 V ID = -10µA, VGS = 0VVGS(th) Gate Threshold Voltage 1 2.5 V VGS = VDS, ID = 250µA
  4. 4. IGSS Gate Body Leakage 100 nA VGS = ±30V, VDS = 0VIDSSZero Gate Voltage Drain Current 1 µA VGS = 0V, VDS = 50V500 µA VGS = 0V, VDS = 50VTA = 125°CID(ON) ON-State Drain Current 500 mA VGS = 10V, VDS≥ 2VDS(ON)RDS(ON) Static Drain-to-Source ON-State Resistance 7.5 VGS = 5V, ID = 50mA7.5 VGS = 10V, ID = 500mAGFSForward Transconductance 80 m VDS
  5. 5. = 10V, ID = 0.2ACISSInput Capacitance 50COSSCommon Source Output Capacitance 25 pFCRSSReverse Transfer Capacitance 5t(ON)Turn-ON Time 20t(OFF)Turn-OFF Time 20VSDDiode Forward Voltage Drop 1.5 V ISD = 150mA, VGS = 0VNotes:All D.C. parameters 100% tested at 2
  6. 6. MMBT2484CHARACTERISTICSCollector – Emitter Breakdown Voltage(IC = 10 mAdc, IB = 0)V(BR)CEO60 —VdcCollector – Base Breakdown Voltage(IC = 10 Adc, IE = 0)V(BR)CBO60 —Vdc
  7. 7. Emitter – Base Breakdown Voltage(IE = 10 Adc, IC = 0)V(BR)EBO5.0 —VdcCollector Cutoff Current(VCB = 45 Vdc, IE = 0)(VCB = 45 Vdc, IE = 0, TA = 150°C)ICBO——1010nAdcµAdcEmitter Cutoff Current(VEB = 5.0 Vdc, IC = 0)IEBO— 10nAdc

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