SPICE MODEL of 2SK4017 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: MOSFET (Professional Model)
PART NUMBER: 2SK4017
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Professional Model) /
ESD Protection Diode

2. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
2
MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

3. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
3
0
3
6
9
12
15
0.0 2.0 4.0 6.0 8.0 10.0
Transconductancegfs(S)
Drain Current ID (A)
Measurement
Simulation
Transconductance Characteristic
Circuit Simulation Result
Comparison table
Id(A)
gfs(S)
%Error
Measurement Simulation
0.2 2.300 2.202 -4.27
0.5 3.550 3.439 -3.12
1 4.850 4.796 -1.11
2 6.800 6.652 -2.18
5 10.300 10.126 -1.69
10 13.600 13.744 1.06

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4
V_V1
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(V3)
0A
2A
4A
6A
8A
10A
V1
V2
10
0
V3
U1
2SK4017
Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit

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5
0.00
2.00
4.00
6.00
8.00
10.00
0.0 1.0 2.0 3.0 4.0 5.0
DrainCurrentID(A)
Gate - Source Voltage VGS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
ID(A)
VGS(V)
%Error
Measurement Simulation
0.2 2.500 2.560 2.39
0.5 2.650 2.666 0.60
1 2.780 2.787 0.26
2 2.950 2.962 0.39
5 3.300 3.318 0.54
10 3.750 3.735 -0.39

6. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
6
V_VDS
0V 25mV 50mV 75mV 100mV 125mV 150mV
I(V3)
0A
0.5A
1.0A
1.5A
2.0A
2.5A
0
V3
0Vdc
VDS
0Vdc
V1
10
U1
2SK4017
Rds(on) Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=2.5A, VGS=10V Unit Measurement Simulation %Error
RDS (on)  0.070 0.070 0.00

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VDD
48
I1TD = 0
TF = 5n
PW = 600u
PER = 1000u
I1 = 0
I2 = 1m
TR = 5n -
+
W1
ION = 0uA
IOFF = 1mA
W
I2
5
0
D2
Dbreak
U1
2SK4017
Time*1mA
0 5n 10n 15n 20n 25n 30n
V(W1:3)
0V
5V
10V
15V
20V
Gate Charge Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD=48V, ID=5A,
VGS=10V
Unit Measurement Simulation %Error
Qgs nC 3.250 3.256 0.20
Qgd nC 4.000 4.000 0.00
Qg nC 15.000 14.989 -0.07

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Capacitance Characteristic
Simulation Result
VDS(V)
Cbd(pF)
%Error
Measurement Simulation
0.100 150.000 145.600 -2.93
0.200 135.000 134.370 -0.47
0.500 112.000 112.520 0.46
1.000 93.000 92.800 -0.22
2.000 74.000 74.450 0.61
5.000 52.000 51.680 -0.62
10.000 39.000 38.920 -0.21
20.000 29.000 29.080 0.28
40.000 20.500 21.500 4.88
60.000 18.000 18.193 1.07
Simulation
Measurement

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9
0
VDD
30.2Vdc
V2
TD = 1u
TF = 5n
PW = 10u
PER = 1m
V1 = 0
TR = 5n
V2 = 20
L2
50nH
U1
2SK4017
R2
4.7
R1
4.7
L1
30nH
RL
12
Time
0.92us 0.96us 1.00us 1.04us 1.08us 1.12us
V(U1:G) V(U1:D)/3.02
-2V
0V
2V
4V
6V
8V
10V
12V
14V
16V
18V
20V
Switching Time Characteristics
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=2.5A, VDD=30V
VGS=0/10V
Unit Measurement Simulation %Error
ton ns 20.000 20.008 0.04

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10
V_V2
0V 2V 4V 6V 8V 10V
I(V3)
0A
2A
4A
6A
8A
10A
V2
20V1
0
0
V3
0Vdc
U1
2SK4017
Output Characteristic
Circuit Simulation result
Evaluation circuit
VGS=2.8V
8
3
3.3
10 4
6

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11
V_VSD
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(Vsense)
100mA
1.0A
10A
VSD
0
Vsense
0Vdc U1
2SK4017
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit

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12
0.1
1.0
10.0
0 0.2 0.4 0.6 0.8 1 1.2
DrainreversecurrentIDR(A)
Drain-source voltage: -VDS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
IDR (A)
-VDS (V)
%Error
Measurement Simulation
0.1 0.6700 0.6676 -0.36
0.2 0.6850 0.6856 0.09
0.5 0.7150 0.7178 0.39
1 0.7550 0.7546 -0.05
2 0.8100 0.8116 0.19
5 0.9500 0.9464 -0.38
10 1.1400 1.1414 0.12

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Time
19.84us 19.92us 20.00us 20.08us 20.16us 20.24us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristics
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trj ns 12.000 11.905 -0.79
trb ns 13.600 13.708 0.79
trr ns 25.600 25.613 0.05
V1
TD = 0us
TF = 10ns
PW = 20us
PER = 50us
V1 = -9.40v
TR = 10ns
V2 = 10.60v
R1
50
0
U1
D2SK4017_P

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Reverse Recovery Characteristic Reference
Trj=12.00(ns)
Trb=13.60(ns)
Conditions: Ifwd=lrev=0.2(A), Rl=50
Relation between trj and trb
Example
Measurement

15. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
15
V_V1
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
0A
1mA
2mA
3mA
4mA
5mA
6mA
7mA
8mA
9mA
10mA
ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
Evaluation Circuit
R1
0.001mV1
0Vdc
0
R2
100MEG
U1
2SK4017

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16
Zener Voltage Characteristic Reference