7. SEM - Scanning Electron Microscopy
• tiny electron beam scanned across surface of specimen
• backscattered or secondary electrons detected
• signal output to synchronized display
10. Effects of increasing voltage in
electron gun:
•Resolution increased ( decreased)
•Penetration increases
•Specimen charging increases
(insulators)
•Specimen damage increases
•Image contrast decreases = h/(2melectronqVo + q2Vo2/c2))1/2
VOLTAGE IN ELECTRON GUN:
11. FIELD EMISSION ELECTRON SOURCE:
High electric field at very sharp tip causes electrons to "tunnel"
maybe
13. ELECTRIC FIELD
High electric field at very sharp tip causes electrons to "tunnel"
cool tip ——> smaller E in beam
improved coherence
many electrons from small tip ——> finer
probe size, higher current densities (100X >)
problems - high vacuum
14. Electrons focused by Lorentz force from electromagnetic field
F = qv x B
effectively same as optical lenses
Lenses are ring-shaped
• coils generate magnetic field
• electrons pass thru hollow center
• lens focal length is continuously variable
• apertures control, limit beam
LENSES
15. Conducting -
• little or no preparation
• attach to mounting stub for
insertion into SEM instrument
• may need to provide
Conductive path with Ag paint
Non-conducting (E.g., Polymers and Plastics)-
usually coat with conductive very thin layer (Au, C, Cr)
SPECIMEN
16. Can examine
• fracture surfaces
• electronic devices
• fibers
• coatings
• particles
etc.
TYPES OF SPECIMENS (SOLID/ PARTICLE/ etc)
17. •Actually one at a time is
preferred
•However, four to five can be
placed on the stub
•The Specimen Holder can
be tilted, translated
•Specimen size limited by
size of sample chamber i.e.
the area of the stub
No. of Samples
18. THAT IS HOW AN IMAGE IS FORMED AND CALLED A MICROGRAPH
TYPES OF ELECTRONS FROM SPECIMEN
What comes from specimen?
Backscattered electrons
Secondary electrons
Fluorescent X-rays
high energy
compositional contrast
low energy
topographic contrastcomposition - EDS
Brightness of regions in image increases as
atomic number increases
(less penetration gives more backscattered
electrons)
19. BSEs
SEs
E/Eo
1
Main Electrons accounted for
a Micrograph, coming out
from specimen
• Backscattered electrons
• Secondary electrons
ELECTRON ENERGY DISTRIBUTION
20. Electron Energy up to 30-50 keV
annular around incident beam
repel secondary electrons with
— biased mesh
images are more sensitive to
•chemical composition (electron yield depends
on atomic number)
•line of sight necessary
BACKSCATTERED ELECTRON DETECTOR - SOLID STATE DETECTOR
21. SECONDARY ELECTRON DETECTOR - SCINTILLATION DETECTOR
+ bias mesh needed in front of
detector to attract low energy
electrons
line of sight unnecessary
23. Fracture Surface in iron
SECONDARY
ELECTRONS
BACKSCATTERED
ELECTRONS
CHOOSE CORRECT DETECTOR- TOPOGRAPHY EXAMPLE
24. Comes from any kind of interaction with electron beam
Topography
Composition
o Elements
o Phases
Grain (crystal) orientation
Charging affects contrast
TYPES OF STUDY USING SEM
28. d = depth of field
= required spatial resolution
a = convergence angle
d
region of image in focus
tana
0.5
0.5d
d
For small angles, tana = a
d
a
Can control depth of field (d) with convergence angle (a)
DEPTH OF FIELD