SPICE MODEL of TPC6005 (Professional+BDS Model) in SPICE PARK

Device Modeling Report

COMPONENTS: Power MOSFET (Professional)
PART NUMBER: TPC6005
MANUFACTURER: TOSHIBA
Body Diode (Standard) / ESD Protection Diode

Bee Technologies Inc.

All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

POWER MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility


Transconductance Characteristic

Circuit Simulation Result

Comparison table

VGS(V)
ID(A) Error (%)
Measurement Simulation
0.50 7.60 7.63 0.39
1.00 10.00 10.09 0.90
2.00 13.00 13.10 0.77
5.00 17.90 17.70 -1.12


Vgs-Id Characteristic

Circuit Simulation result

12A

10A

8A

6A

4A

2A

0A
0V 0.5V 1.0V 1.5V 2.0V 2.5V
I(V2)
V_V1

Evaluation circuit

OP EN

OP EN
OP EN V2

0V dc
R1
10 0M EG

V1 V3
10 Vd c 10 Vd c
0

0


Comparison Graph


Simulation Result

VGS(V)
ID(A) Error (%)
0.10 1.10 1.10 0.00
0.20 1.12 1.13 0.89
0.50 1.17 1.17 0.00
1.00 1.24 1.24 -0.40
2.00 1.32 1.32 0.00
5.00 1.49 1.50 0.67


Id-Rds(on) Characteristic


5.0A

4.0A

3.0A

2.0A

1.0A

0A
0V 100mV 200mV 300mV 400mV 500mV
I(V2)
V_V3

Evaluation circuit

U3
OPEN
V2
OPEN
OPEN

0Vdc

R1
100MEG

V1 V3
2.5Vdc 30Vdc
0

0

Simulation Result

ID=3, VGS=2.5V Measurement Simulation Error (%)
R DS (on) 27.00 m 27.00 m 0.00


Gate Charge Characteristic
20V

16V

12V

8V

4V

0V
0 8n 16n 24n 32n 40n
V(W1:3)
Time*10ms

Evaluation circuit

U3 V2

OPEN
OPEN
0Vdc
OPEN
Dbreak

R1
PER = 1000u D1
100MEG PW = 600u TPC6005 I2
TF = 10n W1
TR = 10n + 6Adc
TD = 0
0 I2 = 10m
-
I1 W
I1 = 0 IOFF = 1mA V1
ION = 0uA 24Vdc

0

Simulation Result

VDD=24V,ID=6A
Measurement Simulation Error (%)
,VGS=5V
Qgs 3.5 nC 3.4066 nC -2.74174
Qgd 5.5 nC 5.4945 nC -0.1001
Qg 19 nC 19.344 nC 1.778329


Capacitance Characteristic

Measurement
Simulation

Simulation Result

Cbd(pF)
VDS(V) Error(%)
0.10 100.00 100.00 0.00
0.20 90.00 91.00 1.11
0.50 74.00 74.00 0.00
1.00 56.00 57.00 1.79
2.00 41.00 42.00 2.44
5.00 25.00 25.50 2.00
10.00 17.00 17.00 0.00
20.00 11.00 11.30 2.73


Switching Time Characteristic

7.0V
VDS = 15V

6.0V
VGS = 5V

4.0V

2.0V

0V
5.00us 5.05us 5.09us
V(2) V(3)/3
Time

Evaluation circuit
L1 RL

3
V3 0.03uH 5
OPEN
0Vdc

Rop
U3 VDD
100MEG 15
OPEN

R1 OPEN
L2
0 2
0.03uH 0
V1 = 0 4.7
V1
V2 = 10 R2
TD = 5u
TR = 6n 4.7
TF = 7n
PW = 5u
PER = 100u 0

0 0

Simulation Result

ID=3A, VDD=15V
Measurement Simulation Error(%)
VGS=0/5V
td (on) 13.00 ns 13.01 ns 0.04


Output Characteristic


10A

1.7V
8A

6A
1.6V

1.5V
4A

VGS=1.4V
2A

0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(V2)
V_V3

Evaluation circuit

U3
OPEN
V2
OPEN
OPEN

0Vdc

R1
100MEG

V1 V3
2.5Vdc 30Vdc
0

0


Output Characteristic Reference

1.7V

1.6V

1.5V

VGS=1.4V


PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap


Forward Current Characteristic

Evaluation Circuit

R2

0.01m

TPC6005

OPEN

V1
OPEN
0Vdc
R1
100MEG U5

0

0


Comparison Graph


Simulation Result

Vfwd(V) Vfwd(V)
Ifwd(A) %Error
0.01 0.38 0.38 -1.30
0.02 0.39 0.40 0.51
0.05 0.42 0.42 0.00
0.10 0.44 0.44 0.45
0.20 0.47 0.47 -0.21
0.50 0.51 0.51 -0.20
1.00 0.54 0.54 0.19
2.00 0.58 0.58 -0.52
4.00 0.62 0.62 0.00


Forward Current Characteristic Reference


Reverse Recovery Characteristic

400mA

0A

-400mA
14.96us 15.00us 15.04us 15.08us 15.12us
I(R1)
Time

Evaluation circuit

R1

50
OP EN
U4

Ro p V1 = {-9 .7 } V1 OP EN
V2 = {1 0.5 }
10 0M EG TD = 0
OP EN
TR = 10 n
TF = 10 n
PW = 1 5u
0 PE R = 10 0u

0 0

Compare Measurement vs. Simulation

Trr Measurement Simulation Error(%)
Trj+Trb 32 ns 32.636 ns 1.948768


Reverse Recovery Characteristic Reference

Measurement

trj=10.2(ns)
trb=21.8(ns)
Conditions:Ifwd=Irev=0.2(A),Rl=50

Example

Relation between trj and trb


Zener Voltage Characteristic

Evaluation Circuit

U2
OPEN OPEN
OPEN
OPEN OPEN
R2

R1
0.01m
100MEG TPC6005
V1
0Vdc
0

0


Zener Voltage Characteristic Reference


SPICE MODEL of TPC6005 (Professional+BDS Model) in SPICE PARK

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