This document summarizes the modeling of a Power MOSFET transistor. It includes: 1) Details of the MOSFET part number, manufacturer, and model parameters. 2) Simulation results of the transistor's transconductance, voltage-current characteristics, gate charge, switching times and other properties. 3) Comparisons of the simulated results with measurement data showing good agreement. 4) Reference curves and evaluation circuits used in the simulations.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Professional)
PART NUMBER: 2SJ438
MANUFACTURER: TOSHIBA
REMARK: P Channel Model
Body Diode (Professional) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

2. MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
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3. Transconductance Characteristic
Circuit Simulation Result
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
-0.100 0.670 0.680 1.493
-0.200 1.150 1.200 4.348
-0.500 1.800 1.890 5.000
-1.000 2.800 2.740 -2.143
-2.000 3.800 3.750 -1.316
-5.000 5.750 5.800 0.870
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4. Vgs-Id Characteristic
Circuit Simulation result
-10A
-8A
-6A
-4A
-2A
0A
0V -2V -4V -6V -8V -10V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U7
2SJ438
V1 V2
0 10
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

5. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
-1.000 -2.550 -2.540 -0.392
-2.000 -2.850 -2.853 0.105
-4.000 -3.300 -3.302 0.061
-6.000 -3.700 -3.653 -1.270
-8.000 -4.000 -3.949 -1.275
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

6. Rds(on) Characteristic
Circuit Simulation result
-3.0A
-2.0A
-1.0A
0A
0V -0.5V -1.0V
I(V2)
V_VDS
Evaluation circuit
V2
0Vdc
U7
2SJ438 VDS
0Vdc
VGS
-10Vdc
0
Simulation Result
ID=-2.5A, VGS=-10V Measurement Simulation Error (%)
R DS (on) 160.000 m 160.000 m 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

7. Gate Charge Characteristic
Circuit Simulation result
20V
16V
VDD=-48V
12V
-12V
-24V
8V
4V
0V
0 8n 16n 24n 32n 40n
-V(W1:4)
Time*1mA
Evaluation circuit
ION = 0uA
IOFF = 1mA
W I2
- U10 D2
+ Dbreak 5
I1 = 0 2SJ438
W1
I1
I2 = 1m
TD = 0
TR = 10n
TF = 10n V1
PW = 600u
PER = 1000u
48
0
Simulation Result
VDD=-48V,ID=-5A Measurement Simulation Error (%)
,VGS=-10V
Qgs 4.500 nC 4.504 nC 0.089
Qgd 6.000 nC 6.036 nC 0.600
Qg 22.000 nC 21.982 nC -0.082
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.100 900.000 905.000 0.556
0.200 820.000 822.000 0.244
0.500 650.000 656.000 0.923
1.000 515.000 518.000 0.583
2.000 390.000 393.000 0.769
5.000 260.000 261.000 0.385
10.000 176.000 180.000 2.273
20.000 133.000 132.000 -0.752
50.000 90.000 87.500 -2.778
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

9. Switching Time Characteristic
Circuit Simulation result
-13V
-10V
-5V
0V
1.9us 2.0us 2.1us 2.2us
V(2) V(3)/3
Time
Evaluation circuit
L2 R2
50nH 12
RG L1
U7
PER = 2000u
30nH
PW = 10u 2SJ438 V1
TF = 7n 4.7
TR = 6n 30.05Vdc
R1
TD = 2u
V2 = 20 V2 4.7
V1 = 0
0
Simulation Result
ID=-2.5A, VDD=-30V
Measurement Simulation Error(%)
VGS=0/10V
ton 45.000 ns 44.904 ns -0.213
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

10. Output Characteristic
Circuit Simulation result
-10A
-10.0V
-6.0V
-8A
-8.0V
-6A
-3.5V
-4A
-3V
-2A
-2.5V
VGS=-2.0V
0A
0V -2V -4V -6V -8V -10V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U8
2SJ438
V2
V1
0
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

11. Forward Current Characteristic
Circuit Simulation Result
10A
1.0A
100mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc
U9
2SJ438
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

12. Comparison Graph
Circuit Simulation Result
Simulation Result
VDS(V) VDS(V)
IDR(A) Measurement Simulation %Error
0.100 0.650 0.650 0.000
0.200 0.680 0.682 0.294
0.500 0.730 0.734 0.548
1.000 0.780 0.778 -0.256
2.000 0.830 0.830 0.000
5.000 0.930 0.929 -0.108
10.000 1.050 1.051 0.095
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
0A
-400mA
14.7us 14.9us 15.1us 15.3us 15.5us 15.7us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.4v V1
V2 = 10.6v U10
TD = 0 D2SJ438_PRO
TR = 10ns
TF = 10ns
PW = 1us
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj 44.000 ns 44.146 ns 0.332
trb 72.000 ns 72.270 ns 0.375
trr 116.000 ns 116.416 ns 0.359
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

14. Reverse Recovery Characteristic Reference
Trj=44(ns)
Trb=72(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
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15. Zener Voltage Characteristic
Circuit Simulation Result
-10mA
-9mA
-8mA
-7mA
-6mA
-5mA
-4mA
-3mA
-2mA
-1mA
0A
0V -5V -10V -15V -20V -25V -30V -35V -40V -45V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
Open
V1
0Vdc Ropen
Open 10G
U21 0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005